159 results on '"Tabe M"'
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2. 'Manipulation of single-electrons in Si nanodevices : Interplay with photons and ions
3. KFM measurements of an ultrathin SOI-FET channel surface
4. Development of muon rotating target at J-PARC/MUSE
5. Procedure for Calibrating Kelvin Probe Force Microscope
6. Coulomb-Blockade Charge-Transport Mechanism in Band-to-Band Tunneling in Heavily-Doped Low-Dimensional Silicon Esaki Diodes
7. A Study of Single-Electron Tunneling Functionalities in Highly-Doped Silicon-on-Insulator Junctionless Transistors
8. Comparative study of donor-induced quantum dots in Si nano-channels by single-electron transport characterization and Kelvin probe force microscopy.
9. Formation and ordering of self-assembled Si islands by ultrahigh vacuum annealing of ultrathin bonded silicon-on-insulator structure
10. Formation of high-density silicon dots on a silicon-on-insulator substrate
11. Probing the impact of donor quantum dots with high-bias stability diagrams in selectively-doped Si nanoscale transistors
12. Inter-band tunneling mechanisms via dopant-induced energy states in low-dimensional si tunnel diodes
13. Enhancement of inter-band tunneling due to low-dimensionality of lateral 2D Silicon Esaki diodes
14. Single-electron tunneling operation via a-few-donor quantum dots in SOI-FETs up to room temperature
15. (Invited) Effect of Individual Dopants in Nano-SOI-MOSFETs and Nano-pn-Diodes
16. Management of a large tuberculosis contact investigation related to a contaminated bone graft product used in spinal surgery
17. Ab initio simulation of single dopant devices: electronic states and transport
18. Formation of a Silicon-On-Insulator Structure by Solid-Phase Epitaxy
19. “Manipulation of single-electrons in Si nanodevices
20. KFM measurements of an ultrathin SOI-FET channel surface
21. KPFM Observation of Quantum Dots Induced by Clustered Donors in Selectively-Doped SOI-FETs
22. Impact of Dopant Induced States on Interband Tunneling in Nanoscale pn Junctions
23. Control of electron transport regimes via single- and multiple-donors in nano-channel SOI-FETs
24. Study of quantized-energy effects in Si nanoscale lateral pn junction diodes
25. Dopant-Atom-based SOI-Transistors by Selective Nanoscale Doping
26. Photoexcited-Electron Trapping by Individual Donor in Lateral Nanowire pn Junction
27. Observation of charging and discharging effects of dopant atoms in nanoscale lateral pn junction by Kelvin probe force microscope
28. Ab initio analysis of donor state deepening in Si nano-channels
29. Effect of Free Carriers on Dopant-induced Surface Potential in SOI-FETs
30. Donor-location-dependent RTS Observed by Trapping and Detrapping of a Photoexcited Electron by a Single Donor
31. Single-Photon Detection by Individual Dopants and the Effect of Channel Shape in SOI-FET
32. KFM Observation of Single-Electron Filling in Isolated and Clustered Dopants
33. ChemInform Abstract: Novel Pendant-Type Macrocyclic Bifunctional Chelating Agents: ( Carboxymethyl)amino Derivatives of 2-(4-Nitrobenzyl)-1,4,7,10- tetraazacyclododecane-N,N′,N′′,N′′′-tetraacetic Acid and Their Complex Formation with Yttrium(III).
34. Single-Electron Transport through Discrete Dopants
35. Single-Electron Transfer by Controlling the Dopant-Induced Quantum Dot Landscape
36. Dopant Freeze-out and Potential Fluctuations Observed by Low Temperature Kelvin Probe Force Microscope
37. Si bicrystal single-electron FETs
38. Control of single dopants in the electron conduction path in SOI doped-nanowire FETs
39. Si Multidot FETs for Single-Electron Transfer and Single-Photon Detection
40. Design Control of Random Dopant-induced Multiple-Tunnel-Junction Arrays for Turnstile Operation
41. Direct Observation of Freeze-out Effect in Si by Kelvin Probe Force Microscope
42. Photon-induced single-hole-tunneling current modulation in Si multiple-tunnel-junction field-effect transistor
43. Photo Illumination Effect on Single-Electron-Tunneling Current Through a Thin Bicrystal SOI FET
44. Observation of single-electron pump operation with one ac gate bias in phosphorous-doped Si wires
45. Applied Surface Science
46. Fowler-Nordheim current oscillations in Si(111)/SiO2/twisted-Si(111) tunneling structures
47. Artificial dislocation network for Si nanodevices
48. Ambipolar coulomb blockade characteristics in a two-dimensional Si multidot device
49. Foreword
50. KFM measurements of an ultrathin SOI-FET channel surface.
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