1. Impedance characterization of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene diodes: Addressing dielectric properties and trap effects.
- Author
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Cho, Hong-rae, Hyung Park, Joon, Kim, Somi, Udaya Mohanan, Kannan, Jung, Sungyeop, and Kim, Chang-Hyun
- Subjects
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DIELECTRIC properties , *DIODES , *ORGANIC semiconductors , *THIOPHENES , *P-type semiconductors , *ELECTRONIC equipment - Abstract
Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) is a widely used small-molecular p-type organic semiconductor. Despite the broad availability of high-performance DNTT transistors, there is a lack of investigation into other devices based on this semiconductor. In this study, rectifying diodes with DNTT as a single transport medium are fabricated and characterized. Realizing unipolar current rectification from asymmetric metal contacts, a number of physical and electrical properties of DNTT are made accessible. Current–voltage measurement, broad-band impedance spectroscopy, drift-diffusion simulation, and equivalent-circuit modeling are combined to quantify important parameters such as dielectric constant, trap energy, and lifetime. These results provide a practical reference for the design and optimization of diverse electronic devices incorporating DNTT. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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