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Next-generation personalized healthcare devices are undergoing extreme miniaturization in order to improve user acceptability. However, such developments make it difficult to incorporate cryptographic primitives using available target technologies since these algorithms are notorious for their energy consumption. Besides, strengthening these schemes against side-channel attacks further adds to the device overheads. Therefore, viable alternatives among emerging technologies are being sought. In this work, we investigate the possibility of using memristors for implementing lightweight encryption. We propose a 40-nm RRAM-based GIFT-cipher implementation using a 1T1R configuration with promising results; it exhibits roughly half the energy consumption of a CMOS-only implementation. More importantly, its non-volatile and reconfigurable substitution boxes offer an energy-efficient protection mechanism against side-channel attacks. The complete cipher takes 0.0034 mm$^2$ of area, and encrypting a 128-bit block consumes a mere 242 pJ.

Memory designs require timing margins to compensate for aging and fabrication process variations. With technology downscaling, aging mechanisms became more apparent, and larger margins are considered necessary. This, in return, means a larger area requirement and lower performance for the memory. Bias Temperature Instability (BTI) is one of the main contributors to aging, which slows down transistors and ultimately causes permanent faults. In this paper, first, we propose a low-cost aging mitigation scheme, which can be applied to existing hardware to mitigate aging on memory address decoder logic. We mitigate the BTI effect on critical transistors by applying a rejuvenation workload to the memory. Such an auxiliary workload is executed periodically to rejuvenate transistors that are located on critical paths of the address decoder. Second, we analyze workloads' efficiency to optimize the mitigation scheme. Experimental results performed with realistic benchmarks demonstrate several-times lifetime extension with a negligible execution overhead., Comment: 2022 IEEE 23rd Latin American Test Symposium (LATS)

According to the World Economic Forum, cyber attacks are considered as one of the most important sources of risk to companies and institutions worldwide. Attacks can target the network, software, and/or hardware. During the past years, much knowledge has been developed to understand and mitigate cyberattacks. However, new threats have appeared in recent years regarding software attacks that exploit hardware vulnerabilities. We define these attacks as architectural attacks. Today, both industry and academy have only limited comprehension of architectural attacks, which represents a critical issue for the design of future systems. To this end, this work proposes a new taxonomy, a new attack model, and a complete survey of existing architectural attacks. As a result, our study provides the tools to understand the Architectural Attacks deeply and start building better designs as well as protection mechanisms.

As a unique mechanism for MRAMs, magnetic coupling needs to be accounted for when designing memory arrays. This paper models both intra- and inter-cell magnetic coupling analytically for STT-MRAMs and investigates their impact on the write performance and retention of MTJ devices, which are the data-storing elements of STT-MRAMs. We present magnetic measurement data of MTJ devices with diameters ranging from 35nm to 175nm, which we use to calibrate our intra-cell magnetic coupling model. Subsequently, we extrapolate this model to study inter-cell magnetic coupling in memory arrays. We propose the inter-cell magnetic coupling factor Psi to indicate coupling strength. Our simulation results show that Psi=2% maximizes the array density under the constraint that the magnetic coupling has negligible impact on the device's performance. Higher array densities show significant variations in average switching time, especially at low switching voltages, caused by inter-cell magnetic coupling, and dependent on the data pattern in the cell's neighborhood. We also observe a marginal degradation of the data retention time under the influence of inter-cell magnetic coupling.

Nowadays, Internet of Things (IoT) is a trending topic in the computing world. Notably, IoT devices have strict design requirements and are often referred to as constrained devices. Therefore, security techniques and primitives that are lightweight are more suitable for such devices, e.g., Static Random-Access Memory (SRAM) Physical Unclonable Functions (PUFs) and Elliptic Curve Cryptography (ECC). SRAM PUF is an intrinsic security primitive that is seeing widespread adoption in the IoT segment. ECC is a public-key algorithm technique that has been gaining popularity among constrained IoT devices. The popularity is due to using significantly smaller operands when compared to other public-key techniques such as RSA (Rivest Shamir Adleman). This paper shows the design, development, and evaluation of an application-specific secure communication architecture based on SRAM PUF technology and ECC for constrained IoT devices. More specifically, it introduces an Elliptic Curve Diffie-Hellman (ECDH) public-key based cryptographic protocol that utilizes PUF-derived keys as the root-of-trust for silicon authentication. Also, it proposes a design of a modular hardware architecture that supports the protocol. Finally, to analyze the practicality as well as the feasibility of the proposed protocol, we demonstrate the solution by prototyping and verifying a protocol variant on the commercial Xilinx Zynq-7000 APSoC device.

As one of the most promising emerging non-volatile memory (NVM) technologies, spin-transfer torque magnetic random access memory (STT-MRAM) has attracted significant research attention due to several features such as high density, zero standby leakage, and nearly unlimited endurance. However, a high-quality test solution is required prior to the commercialization of STT-MRAM. In this paper, we present all STT-MRAM failure mechanisms: manufacturing defects, extreme process variations, magnetic coupling, STT-switching stochasticity, and thermal fluctuation. The resultant fault models including permanent faults and transient faults are classified and discussed. Moreover, the limited test algorithms and design-for-testability (DfT) designs proposed in the literature are also covered. It is clear that test solutions for STT-MRAMs are far from well established yet, especially when considering a defective part per billion (DPPB) level requirement. We present the main challenges on the STT-MRAM testing topic at three levels: failure mechanisms, fault modeling, and test/DfT designs., Comment: review paper, 24 pages

The recent trends for nanoelectronic computing systems include machine-to-machine communication in the era of Internet-of-Things (IoT) and autonomous systems, complex safety-critical applications, extreme miniaturization of implementation technologies and intensive interaction with the physical world. These set tough requirements on mutually dependent extra-functional design aspects. The H2020 MSCA ITN project RESCUE is focused on key challenges for reliability, security and quality, as well as related electronic design automation tools and methodologies. The objectives include both research advancements and cross-sectoral training of a new generation of interdisciplinary researchers. Notable interdisciplinary collaborative research results for the first half-period include novel approaches for test generation, soft-error and transient faults vulnerability analysis, cross-layer fault-tolerance and error-resilience, functional safety validation, reliability assessment and run-time management, HW security enhancement and initial implementation of these into holistic EDA tools., Comment: 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE), Grenoble, France, 09 - 13 March 2020 6 pages

CMOS technology and its continuous scaling have made electronics and computers accessible and affordable for almost everyone on the globe; in addition, they have enabled the solutions of a wide range of societal problems and applications. Today, however, both the technology and the computer architectures are facing severe challenges/walls making them incapable of providing the demanded computing power with tight constraints. This motivates the need for the exploration of novel architectures based on new device technologies; not only to sustain the financial benefit of technology scaling, but also to develop solutions for extremely demanding emerging applications. This paper presents two computation-in-memory based accelerators making use of emerging memristive devices; they are Memristive Vector Processor and RRAM Automata Processor. The preliminary results of these two accelerators show significant improvement in terms of latency, energy and area as compared to today's architectures and design.