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12 results on '"T.C. McGill"'

1. Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors

Author

T.C. McGill, C.M. Sotomayor Torres, W. Gebhardt, T.C. McGill, C.M. Sotomayor Torres, and W. Gebhardt

Subjects
Low-dimensional semiconductors--Congresses, Wide gap semiconductors--Optical properties--C, Crystal growth--Congresses
Abstract

This volume contains the Proceedings of the NATO Advanced Research Workshop on'Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors', held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.

Published
2012

2. The role of materials in the electronics world of 2012 A.D.: An update

Author

T.C. McGill

Subjects
Engineering, business.industry, law, Electrical engineering, New materials, Integrated circuit, Electronics, Electrical and Electronic Engineering, business, Technology forecasting, Manufacturing engineering, law.invention
Abstract

In reviewing the predictions by G.K. Teal for 2012, I am struck most by the accuracy of his vision. The year 1962 was at the very beginning of the electronics revolution. Silicon integrated circuits were but a gleam in the eyes of a select few, yet Teal saw clearly that modern electronics would be based, fundamentally and pervasively, on "tailor-making materials starting at the atomic level". Personally, I believe that the development of new materials and novel structures is going to be as important to the evolution of electronics over the next 15 years as it has in the past 35 years.

Published
1999
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3. High gains observed at room temperature in Stark effect tunneling transistors

Author

D.A. Collins and T.C. McGill

Subjects
Materials science, Condensed Matter::Other, business.industry, Superlattice, Transistor, Heterojunction, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, law.invention, Condensed Matter::Materials Science, symbols.namesake, Stark effect, law, symbols, Optoelectronics, business, Science, technology and society, Layer (electronics), Quantum tunnelling, Molecular beam epitaxy
Abstract

Summary form only given. Attention is given to a Stark effect transistor in which the emitter-collector current is controlled by a base positioned in such a way to provide a small base current. The reported structure uses a GaSb-InAs-AlSb-GaSb heterostructure that has values for beta vastly exceeding that for any tunnel transistor. The devices reported were fabricated by molecular beam epitaxy on GaAs substrates. The heterostructure device was grown on a thick GaSb layer grown on a superlattice of GaSb-GaAs. The results presented strongly suggest that the Stark effect transistor mechanism as implemented in the GaSb-InAs-AlSb heterojunction system has real promise for providing a device technology for the next generation of ultra-small and ultra-fast transistors. >

Published
2002
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4. Transport analysis of filamentary dielectric breakdown model for metal-oxide-semiconductor tunnel structures

Author

T.C. McGill and D.Z.-Y. Ting

Subjects
chemistry.chemical_compound, Materials science, chemistry, Condensed matter physics, Silicon, Quantum dot, Scattering, Dielectric breakdown model, Oxide, chemistry.chemical_element, Thermal conduction, Current density, Quantum tunnelling
Abstract

The current-voltage characteristics of n/sup +/ poly-Si/SiO/sub 2//p-Si tunnel structures containing nano-scale filaments embedded in ultra-thin oxide layers are analyzed using a 3D quantum mechanical scattering calculation. We find that the filaments act as highly efficient localized conduction paths and can lead to dramatic increases in current densities. By using progressively larger filaments, we can reproduce a range of stress-induced behavior found in experimental current-voltage characteristics, including quasi-breakdown and breakdown. We also find that at below flat-band, the current densities in structures with long filaments are greatly enhanced by resonant tunneling through states identified as quantum dots, and that this current enhancement is highly temperature dependent.

Published
2002
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6. List of contributors

Author

R. Accomo, N. Achtziger, S.J.A. Adams, I. Akasaki, J.P. Albert, H. Amano, R. André, A. Antonelli, M. Asif Khan, R.L. Aulombard, R.F. Austin, G. Balestrino, R. Baltramiejūnas, F. Bechstedt, N. Bécourt, L. Bergman, J. Bernholc, D. Bertho, CM. Bertoni, S. Billat, M. Boćkowski, C. Bodin, C. Bodin-Deshayes, E.B. Boiko, P. Boring, A. Bouhelal, G. Bratina, K.F. Brennan, P.R. Briddon, O. Briot, I. Broser, A. Bsiesy, E. Bucher, A. Burchard, G. Cantwell, C.H. Carter, T. Castro, B.C. Cavenett, D.J. Chadi, K.M. Chen, X. Chen, H. Cheng, W.J. Choyke, N.E. Christensen, J. Cibert, R. Cingolani, T. Cloitre, P.I. Cohen, A.T. Collins, H.L. Cotal, A. Cricenti, M. Dabbicco, L.S. Dang, R.F. Davis, M. Deicher, J.M. DePuydt, B. Dischler, V.A. Dmitriev, J.F. Donegan, J.P. Doran, J.J. Dubowski, L. Eckey, J.A. Edmond, A.L. Efros, R.J. Egan, F. Engelbrecht, W. Evstropov, M. Fanciulli, R.D. Feldman, A.C. Felici, M. Ferrara, L. Ferrari, D.K. Ferry, G. Feuillet, M. Fiedler, F. Finocchi, R. Fischer, G. Fishman, A. Franciosi, Ch. Fricke, S.I. Frolov, D. Fuchs, G. Galli, S.V. Gaponenko, F. Gaspard, V.I. Gavrilenko, V. Gavryushin, W. Gebhardt, I.N. Germanenko, J. Geurts, K.P. Geyzers, B. Gil, W. Gladfelter, G. Gleitsman, E.O. Göbel, C. Godet, O. Goede, I. Gorczyca, V.P. Gribkovskii, I. Grzegory, H.-E. Gumlich, R.L. Gunshor, A.L. Gurskii, J. Gutowski, F. Gygi, M.A. Haase, C Haberstroh, W.C. Harsch, I. Hauksson, S. Hayashi, J. Hegarty, W. Heimbrodt, K. Heime, V. Heine, R. Heitz, R. Helbig, B. Henderson, F. Henneberger, R. Hérino, J. Hermans, M. Heuken, A. Hoffmann, H. Hoffmann, N. Hoffmann, H. Hofsäss, T.P. Humphreys, R.W. Hunt, S. Iarlori, S. Iida, K. Ikoma, J.P. Itie, K. Jacobs, S.G. Jahn, J.M. Jancu, C. Jaussaud, T. Jentzsch, R.L. Johnson, R. Jones, C. Jouanin, P.H. Jouneau, J. Jun, V. Jungnickel, D. Juodžbalis, S.A. Kajihara, J. Kanicki, S. Karmann, H. Katayama-Yoshida, Y. Kawakami, A. Kazlauskas, A. Kean, M.R.H. Khan, R.D. King-Smith, H. Kinto, U. Kißmann, A. Klimakow, N.I. Klyui, N. Koide, P. Koidl, H.-S. Kong, H.S. Kong, Th. König, J. Kono, V.K. Kononenko, M. Kotaki, C. Kreß, T. Krings, St. Krukowski, V. Kubertavicius, G.H. Kudlek, W. Kuhn, K. Kunc, Y. Kuroda, J.N. Kuznia, K.W. Kwak, G. Labrunie, D.B. Laks, W.R.L. Lambrecht, S. Lankes, V. Yu. Lebed, T. Lei, S. Leibenzeder, M. Lepore, T. Licht, M. Ligeon, I. Yu. Linkov, E. Litwin-Staszewska, S. Logothetidis, G. Luce, E.V. Lutsenko, M. Ch. Lux-Steiner, F. Madéore, R. Magerle, H.-E. Mahnke, K. Maier, I.E. Malinovskii, K. Manabe, M. Marinelli, B.G. Markey, A. Markwitz, T. Marshall, H. Mathieu, H. Matsunami, J.O. McCaldin, T.C. McGill, S.W.S. McKeever, J. Meier, I. Mihalcescu, E. Milani, A.I. Mitcovets, T. Mitsuyu, N. Miura, R.J. Molnar, E. Molva, M. Morohashi, Ya.V. Morozenko, T.D. Moustakas, A. Mujica, G. Mula, F. Muller, W. Müller-Sebert, A. Muñoz, A. Mura, A. Naumov, R.J. Needs, R.J. Nemanich, R. Nicolini, A.V Nurmikko, K.P. O'Donnell, T. Oguchi, K. Ohkawa, S. Okamoto, N. Okazaki, H. Okumura, M.A. Osman, J.W. Palmour, E.C. Paloura, M. Palummo, A. Paoletti, A.M. Papon, P. Paroli, M. Parrinello, G. Pensl, E. Pereira, P. Perlin, J. Petalas, W. Pfeiffer, M.C. Phillips, F.G Pikus, I. Pinter, M. Pirzer, U. Pohl, U.W. Pohl, H.M. Polatoglou, A. Polian, R. Polini, B.E. Ponga, J.L. Ponthenier, S. Porowski, J.F. Prins, K.A. Prior, J. Puls, J. Qiu, A. Qteish, G. Raciukaitis, L. Reining, T. Reisinger, M. Restle, M. Righini, P. Rodríguez-Hernández, S.J. Rolfe, R. Romestain, VD. Ryzhikov, B. Sailer, D. Sander, L. Santos, T. Sasaki, M. Sawada, G. Scamarcio, M.A. Scarselli, M. Schadt, A. Schneider, J. Schneider, A. Schöner, A. Schülzgen, S. Selci, M. Shinohara, J. Simpson, L. Sorba, B. Spellmeyer, R.P. Stanley, H. Stanzl, R.A. Stein, H. Stewart, I. Suemune, G. Sulzer, T. Suski, W. Suttrop, J.F. Swenberg, M.R. Taghizadeh, S. Takeyama, T.L. Tansley, A. Tebano, P. Thurian, E. Tosatti, C. Trager-Cowan, N. Troullier, I. Tschentscher, N. Tsuboi, A. Tsujimura, K. Tsukioka, P.A. Tupenevich, K.F. Turner, H. Uchiki, M. Uhrmacher, B. Ullrich, D. Uttamchandani, C.G. Van de Walle, J. van der Weide, J.M. Van Hove, D. Vanderbilt, L. Vanzetti, D. Vasileska, J.C. Vial, H.P. Wagner, U. Wahl, H. Waldmann, CT. Walker, E.G. Wang, M.W. Wang, S.Y. Wang, Y. Wang, V. Weinhold, T. Wiehert, C. Wild, W. Witthuhn, H. Wolf, K. Wolf, M. Wörz, G.P. Yablonskii, M. Yagi, S. Yamaga, M. Yamanaka, F. Yang, S. Yoshii, A. Yoshikawa, X. Yu, W. Zeitz, and L.G. Zimin

Published
1993
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8. Infrared absorption in ionic insulators due to multiphonon processes

Author

R.W. Hellwarth, T.C. McGill, M. Mangir, and H.V. Winston

Subjects
Condensed matter physics, Chemistry, Operator (physics), Anharmonicity, Infrared spectroscopy, Ionic bonding, General Chemistry, Condensed Matter Physics, Molecular physics, Exponential function, Dipole, Moment (physics), General Materials Science, Absorption (electromagnetic radiation)
Abstract

The absorption β in ionic insulators due to multiphonon processes is examined for frequencies higher than several times the reststrahl frequency. The frequency dependence and temperature dependence of β are calculated for simple models which include approximations appropriate to ionic insulators: anharmonic potential and an estimate of the influence of a small quadratic term in the dipole moment operator. The frequency dependence of β is found to be approximately exponential with a slope given by the log of the ratio of atomic displacement to a distance characterizing the onset of the anharmonicity in the potential. The calculated values of β are found to be in good agreement with the experimental results for reasonable values of the parameters in the models.

Published
1973
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12. Outcomes of Redo Transcatheter Aortic Valve Replacement for the Treatment of Postprocedural and Late Occurrence of Paravalvular Regurgitation and Transcatheter Valve Failure.

Author

Barbanti M, Webb JG, Tamburino C, Van Mieghem NM, Makkar RR, Piazza N, Latib A, Sinning JM, Won-Keun K, Bleiziffer S, Bedogni F, Kapadia S, Tchetche D, Rodés-Cabau J, Fiorina C, Nombela-Franco L, De Marco F, de Jaegere PP, Chakravarty T, Vaquerizo B, Colombo A, Svensson L, Lange R, Nickenig G, Möllmann H, Walther T, Della Rosa F, Elhmidi Y, Dvir D, Brambilla N, Immè S, Sgroi C, Gulino S, Todaro D, Pilato G, Petronio AS, and Tamburino C

Subjects
Aged, Aged, 80 and over, Aortic Valve diagnostic imaging, Aortic Valve physiopathology, Aortic Valve Insufficiency diagnostic imaging, Aortic Valve Insufficiency etiology, Aortic Valve Insufficiency physiopathology, Aortic Valve Stenosis diagnostic imaging, Aortic Valve Stenosis physiopathology, Canada, Echocardiography, Europe, Female, Humans, Male, Middle Aged, Prospective Studies, Prosthesis Design, Recurrence, Reoperation, Retrospective Studies, Risk Factors, Severity of Illness Index, Time Factors, Transcatheter Aortic Valve Replacement adverse effects, Treatment Outcome, United States, Aortic Valve surgery, Aortic Valve Insufficiency therapy, Aortic Valve Stenosis surgery, Heart Valve Prosthesis, Prosthesis Failure, Transcatheter Aortic Valve Replacement instrumentation
Abstract

Background: Transcatheter aortic valves can degenerate in a manner similar to surgical bioprostheses., Methods and Results: Clinical and echocardiographic outcomes of patients who underwent redo transcatheter aortic valve replacement (TAVR) procedures >2 weeks post procedure were collected from 14 centers. Among 13 876 patients, 50 (0.4%) underwent redo TAVR procedure at participating centers. Indications for redo TAVR were moderate-severe prosthetic aortic valve stenosis (n=10, 21.7%), moderate-severe central prosthetic aortic valve regurgitation (n=13, 28.3%), and moderate-severe paraprosthetic aortic valve regurgitation (n=25, 50.0%). The index TAVR was most commonly a Medtronic CoreValve (N=38, 76.0%), followed by Edwards SAPIEN-type valves (n=12, 24.0%) and Portico (n=1, 2.0%). The redo TAVR device was most commonly a CoreValve/Evolut R (n=29, 58.0%), followed by a SAPIEN-type valve (n=20,40.0%) or a Boston Lotus valve (n=1, 2.0%). In 40 patients (80.0%), redo TAVR was performed using the identical device type or that of the succeeding generation. Valve performance was uniformly good after redo TAVR (mean transvalvular gradient post redo TAVR: 12.5±6.1 mm Hg). At hospital discharge, all patients remained alive, with 1 nondisabling stroke (2.0%) and 1 life-threatening bleed (2.0%). Permanent pacemaker implantation was required in 3 out of 35 patients without a prior pacemaker (8.6%). Late survival was 85.1% at a median follow-up of 1589 days (range: 31-3775) after index TAVR and 635 days (range: 8-2460) after redo TAVR., Conclusions: Redo TAVR for the treatment of postprocedural and late occurrence of paravalvular regurgitation and transcatheter aortic valve prosthesis failure seems to be safe, and it is associated with favorable acute and midterm clinical and echocardiographic outcomes., (© 2016 American Heart Association, Inc.)

Published
2016
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