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A thermal diode, which, by analogy to its electrical counterpart, rectifies heat current, is the building block for thermal circuits. To realize a thermal diode, we demonstrate thermal rectification in a GaAs telescopic nanowire system using the thermal bridge method. We measured a preferred direction of heat flux, achieving rectification values ranging from 2 to 8% as a function of applied thermal bias. We demonstrate that the thermal boundary resistance between the thin part with the wurtzite crystal phase and the thick part with the zinc-blende crystal phase of the telescopic nanowire plays a crucial role in determining the amount and direction of heat flux rectification. This effect is confirmed by numerical solutions of the one-dimensional heat equation based on ab initio data. Additionally, we accounted for the effect of the thermal contact resistance. This work is the first experimental indication of rectification using a telescopic nanowire where we reveal the importance and role of the thermal boundary resistance in determining thermal rectification.

According to Fourier's law, a temperature difference across a material results in a linear temperature profile and a thermal conductance that decreases inversely proportional to the system length. These are the hallmarks of diffusive heat flow. Here, we report heat flow in ultrathin (25 nm) GaP nanowires in the absence of a temperature gradient within the wire and find that the heat conductance is independent of wire length. These observations deviate from Fourier's law and are direct proof of ballistic heat flow, persisting for wire lengths up to at least 15 μm at room temperature. When doubling the wire diameter, a remarkably sudden transition to diffusive heat flow is observed. The ballistic heat flow in the ultrathin wires can be modeled within Landauer's formalism by ballistic phonons with an extraordinarily long mean free path.

One of the current challenges in nanoscience is tailoring the phononic properties of a material. This has long been a rather elusive task because several phonons have wavelengths in the nanometer range. Thus, high quality nanostructuring at that length-scale, unavailable until recently, is necessary for engineering the phonon spectrum. Here we report on the continuous tuning of the phononic properties of a twinning superlattice GaP nanowire by controlling its periodicity. Our experimental results, based on Raman spectroscopy and rationalized by means of ab initio theoretical calculations, give insight into the relation between local crystal structure, overall lattice symmetry, and vibrational properties, demonstrating how material engineering at the nanoscale can be successfully employed in the rational design of the phonon spectrum of a material.

The diameter dependence of the thermal conductivity of InAs nanowires in the range of 40-1500 nm has been measured. We demonstrate a reduction in thermal conductivity of 80% for 40 nm nanowires, opening the way for further design strategies for nanoscaled thermoelectric materials. Furthermore, we investigate the effect of thermal contact in the most common measurement method for nanoscale thermal conductivity. Our study allows for the determination of the thermal contact using existing measurement setups. The thermal contact resistance is found to be comparable to the wire thermal resistance for wires with a diameter of 90 nm and higher.

The radiative interaction of solid-state emitters with cavity fields is the basis of semiconductor microcavity lasers and cavity quantum electrodynamics (CQED) systems. Its control in real time would open new avenues for the generation of non-classical light states, the control of entanglement and the modulation of lasers. However, unlike atomic CQED or circuit quantum electrodynamics, the real-time control of radiative processes has not yet been achieved in semiconductors because of the ultrafast timescales involved. Here we propose an ultrafast non-local moulding of the vacuum field in a coupled-cavity system as an approach to the control of radiative processes and demonstrate the dynamic control of the spontaneous emission (SE) of quantum dots (QDs) in a photonic crystal (PhC) cavity on a ∼ 200 ps timescale, much faster than their natural SE lifetimes.