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Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk states and topological surface states with intriguing transport properties for spintronics. Here, we fabricate highly-ordered metallic Pt3Sn and Pt3SnxFe1-x thin films via sputtering technology. Systematic angular dependence (both in-plane and out-of-plane) study of magnetoresistance presents surprisingly robust quadratic and linear negative longitudinal magnetoresistance features for Pt3Sn and Pt3SnxFe1-x, respectively. We attribute the anomalous negative longitudinal magnetoresistance to the type-II Dirac semimetal phase (pristine Pt3Sn) and/or the formation of tunable Weyl semimetal phases through symmetry breaking processes, such as magnetic-atom doping, as confirmed by first-principles calculations. Furthermore, Pt3Sn and Pt3SnxFe1-x show the promising performance for facilitating the development of advanced spin-orbit torque devices. These results extend our understanding of chiral anomaly of topological semimetals and can pave the way for exploring novel topological materials for spintronic devices., Comment: 13 pages, 4 figures

In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered ${\delta}-$TaN/Co20Fe60B20 devices through spin-torque ferromagnetic resonance ST-FMR and spin pumping measurements. From the ST-FMR characterization we observed a significant linewidth modulation in the magnetic Co20Fe60B20 layer attributed to the charge-to-spin conversion generated from the ${\delta}-$TaN layer. Remarkably, the spin-torque efficiency determined from ST-FMR and spin pumping measurements is as large as ${\Theta} =$ 0.034 and 0.031, respectively. These values are over two times larger than for ${\alpha}-$Ta, but almost five times lower than for ${\beta}-$Ta, which can be attributed to the low room temperature electrical resistivity $\sim 74{\mu}{\Omega}$ cm in ${\delta}-$TaN. A large spin diffusion length of at least $\sim8$ nm is estimated, which is comparable to the spin diffusion length in pure Ta. Comprehensive experimental analysis, together with density functional theory calculations, indicates that the origin of the pronounced SOT effect in ${\delta}-$TaN can be mostly related to a significant contribution from the Berry curvature associated with the presence of a topically nontrivial electronic band structure in the vicinity of the Fermi level (EF). Through additional detailed theoretical analysis, we also found that an isostructural allotrope of the superconducting ${\delta}-$TaN phase, the simple hexagonal structure, ${\theta}-$TaN, has larger Berry curvature, and that, together with expected reasonable charge conductivity, it can also be a promising candidate for exploring a generation of spin-orbit torque magnetic random access memory as cheap, temperature stable, and highly efficient spin current sources., Comment: 28 pages, 7 figures

We performed comprehensive theoretical and experimental studies of the electronic structure and the Fermi surface topology of two novel quantum materials, MoSi$_2$ and WSi$_2$. The theoretical predictions of the electronic structure in the vicinity of the Fermi level was verified experimentally by thorough analysis of the observed quantum oscillations in both electrical resistivity and magnetostriction. We established that the Fermi surface sheets in MoSi$_2$ and WSi$_2$ consist of 3D dumbbell-shaped hole-like pockets and rosette-shaped electron-like pockets, with nearly equal volumes. Based on this finding, both materials were characterized as almost perfectly compensated semimetals. In conjunction, the magnetoresistance attains giant values of $10^4$ and $10^5\,\%$ for WSi$_2$ and MoSi$_2$, respectively. In turn, the anisotropic magnetoresistance achieves $-95$ and $-98\,\%$ at $T=2\,$K and in $B=14\,$T for WSi$_2$ and MoSi$_2$, respectively. Furthermore, for both compounds we observed the Shoenberg effect in their Shubnikov-de Haas oscillations that persisted at as high temperature as $T=25\,$K in MoSi$_2$ and $T=12\,$K in WSi$_2$. In addition, we found for MoSi$_2$ a rarely observed spin-zero phenomenon. Remarkably, the electronic structure calculations revealed type-II Dirac cones located near 480 meV and 710 meV above the Fermi level in MoSi$_2$ and WSi$_2$, respectively., Comment: 33 pages, 8 figures, +(Supplemental Material: 6 pages, 5 figures); Accepted for publication in Physical Review B

We investigated temperature dependent current driven spin-orbit torques in magnetron sputtered Ru2Sn3 (4 and 10 nm) /Co20Fe60B20 (5 nm) layered structures with in-plane magnetic anisotropy. The room temperature damping-like and field-like spin torque efficiencies of the amorphous Ru2Sn3 films were measured to be 0.14 +- 0.008 (0.07 +- 0.012) and -0.03 +- 0.006 (-0.20 +- 0.009), for the 4 (10 nm) films respectively, by utilizing the second harmonic Hall technique. The large field-like torque in the relatively thicker Ru2Sn3 (10 nm) thin film is unique compared to the traditional spin Hall materials interfaced with thick magnetic layers with in-plane magnetic anisotropy which typically have dominant damping-like and negligible field-like torques. Additionally, the observed room temperature field-like torque efficiency in Ru2Sn3 (10 nm)/CoFeB (5 nm) is up to three times larger than the damping-like torque (-0.20 +- 0.009 and 0.07 +- 0.012, respectively) and thirty times larger at 50 K (-0.29 +- 0.014 and 0.009 +- 0.017, respectively). The temperature dependence of the field-like torques show dominant contributions from the intrinsic spin Hall effect while the damping-like torques show dominate contributions from the extrinsic spin Hall effects, skew scattering and side jump. Through macro-spin calculations, we found that including field-like torques on the order or larger than the damping-like torque can reduce the switching critical current and decrease magnetization procession for a perpendicular ferromagnetic layer., Comment: Submitted to Physical Review Materials

We use high-resolution, tunable angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations to study the electronic properties of single crystals of MnBi2Te4, a material that was predicted to be the first intrinsic antiferromagnetic (AFM) topological insulator. We observe both bulk and surface bands in the electronic spectra, in reasonable agreement with the DFT calculations results. In striking contrast to the earlier literatures showing a full gap opening between two surface band manifolds along (0001) direction, we observed a gapless Dirac cone remain protected in MnBi2Te4 across the AFM transition (TN = 24 K). Our data also reveal the existence of a second Dirac cone closer to the Fermi level, predicted by band structure calculations. Whereas the surface Dirac cones seem to be remarkably insensitive to the AFM ordering, we do observe splitting of the bulk band that develops below the TN . Having a moderately high ordering temperature, MnBi2Te4 provides a unique platform for studying the interplay between topology and magnetic ordering., Comment: 6 pages, 3 figures

We use tunable, vacuum ultraviolet laser-based angle-resolved photoemission spectroscopy and density functional theory calculations to study the electronic properties of Dirac semimetal candidate cubic PtBi${}_{2}$. In addition to bulk electronic states we also find surface states in PtBi${}_{2}$ which is expected as PtBi${}_{2}$ was theoretical predicated to be a candidate Dirac semimetal. The surface states are also well reproduced from DFT band calculations. Interestingly, the topological surface states form Fermi contours rather than double Fermi arcs that were observed in Na$_3$Bi. The surface bands forming the Fermi contours merge with bulk bands in proximity of the Dirac points projections, as expected. Our data confirms existence of Dirac states in PtBi${}_{2}$ and reveals the fragility of the Fermi arcs in Dirac semimetals. Because the Fermi arcs are not topologically protected in general, they can be deformed into Fermi contours, as proposed by [Kargarian {\it et al.}, PNAS \textbf{113}, 8648 (2016)]. Our results demonstrate validity of this theory in PtBi${}_{2}$., Comment: 6 pages, 4 figures

We use magnetization measurements, high-resolution angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations to study the electronic properties of Au${}_{2}$Pb, a topological superconductor candidate. The magnetization measurements reveal three discontinuities at 40, 51, and 99~K that agree well with reported structural phase transitions. ARPES measurements of the Au${}_{2}$Pb (111) surface at 110~K shows a shallow hole pocket at the center and flower-petal-like surface states at the corners of the Brillouin zone. These observations match the results of DFT calculations relatively well. The flower-petal-like surface states appear to originate from a Dirac like dispersion close to the zone corner. For the Au${}_{2}$Pb (001) surface at 150~K, ARPES reveals at least one electron pocket between the $\Gamma$ and $M$ points, consistent with the DFT calculations. Our results provide evidence for the possible existence of Dirac state in this material., Comment: 6 pages, 4 figures

Monobismuthides of yttrium and lutetium are shown as new representatives of materials which exhibit extreme magnetoresistance and magnetic-field-induced resistivity plateau. At low temperatures and in magnetic field of 9T the magnetoresistance attains the order of magnitude of 10,000% and 1,000%, on YBi and LuBi, respectively. Our thorough examination of electron transport properties of both compounds show that observed features are the consequence of nearly perfect carrier compensation rather than of possible nontrivial topology of electronic states. The field-induced plateau of electrical resistivity can be explained with Kohler scaling. Anisotropic multi-band model of electronic transport describes very well the magnetic field dependence of electrical resistivity and Hall resistivity. Data obtained from the Shubnikov-de Haas oscillations analysis also confirm that Fermi surface of each compound contains almost equal amounts of holes and electrons. First-principle calculations of electronic band structure are in a very good agreement with the experimental data., Comment: 9 pages, 9 figures, 3 tables (+3 pages, 2 figures and 1 table in Supplemental Material)

Non-centrosymmetric EuTGe3 (T=Co, Ni, Rh, and Ir) possesses magnetic Eu2+ ions and antiferromagnetic ordering appears at low temperatures. Transition metal substitution leads to changes of the unit cell volume and of the magnetic ordering. However, the magnetic ordering temperature does not scale with the volume change and the Eu valence is expected to remain divalent. Here we study the bulk electronic structure of non-centrosymmetric EuTGe3 (T=Co, Ni, Rh, and Ir) by hard x-ray photoelectron spectroscopy. The Eu 3d core level spectrum confirms the robust Eu2+ valence state against the transition metal substitution with a small contribution from Eu3+. The estimated Eu mean-valence is around 2.1 in these compounds as confirmed by multiplet calculations. In contrast, the Ge 2p spectrum shifts to higher binding energy upon changing the transition metal from 3d to 4d to 5d elements, hinting of a change in the Ge-T bonding strength. The valence bands of the different compounds are found to be well reproduced by ab initio band structure calculations.

Very strong magnetoresistance and a resistivity plateau impeding low temperature divergence due to insulating bulk are hallmarks of topological insulators and are also present in topological semimetals where the plateau is induced by magnetic field, when time-reversal symmetry (protecting surface states in topological insulators) is broken. Similar features were observed in a simple rock-salt-structure LaSb, leading to a suggestion of the possible non-trivial topology of 2D states in this compound. We show that its sister compound YSb is also characterized by giant magnetoresistance exceeding one thousand percent and low-temperature plateau of resistivity. We thus performed in-depth analysis of YSb Fermi surface by band calculations, magnetoresistance, and Shubnikov--de Haas effect measurements, which reveals only three-dimensional Fermi sheets. Kohler scaling applied to magnetoresistance data accounts very well for its low-temperature upturn behavior. The field-angle-dependent magnetoresistance demonstrates a 3D-scaling yielding effective mass anisotropy perfectly agreeing with electronic structure and quantum oscillations analysis, thus providing further support for 3D-Fermi surface scenario of magnetotransport, without necessity of invoking topologically non-trivial 2D states. We discuss data implying that analogous field-induced properties of LaSb can also be well understood in the framework of 3D multiband model., Comment: 12 pages, 7 figures, 1 table + Supplementary Materials (3 pages, 2 figures, 1 table)