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We investigate the electronic excitation of silicon by hydrogen, helium, nitrogen, and neon ions for ion energies ranging from several tens to a few hundred kiloelectronvolts. Experiments are carried out in transmission geometry using a time-of-flight medium energy ion scattering system. The targets are self-supporting, single-crystalline Si (100) foils with nominal thicknesses of 50 and 200 nm. Stopping cross-sections (SCSs) are derived and compared with datasets available from the literature and predictions from theory. The results for H projectiles reveal good agreement with literature datasets, within quoted uncertainties. For He projectiles, the results show good agreement with most of the literature data. For N ions, higher values than reported in the literature are measured. For Ne, where literature data are scarce, we extend the velocity regime for which data exist by a factor of two toward higher velocities. The electronic SCS is found to be proportional to ion velocity for all impinging ions, for velocities below the Bohr velocity (v < v0). Comparison with theoretical predictions for a homogeneous free electron gas indicates strong contributions of local energy loss processes different from those expected for electron-hole pair excitation in binary collisions for all ions different from protons.

We have measured the electronic energy-loss straggling of protons, helium, boron and silicon ions in silicon using a transmission time-of-flight approach. Ions with velocities between 0.25 and 1.6 times the Bohr velocity were transmitted through single-crystalline Si(100) nanomembranes in either channelling or random geometry to study the impact parameter dependence of energy-loss straggling. Nuclear and path length contributions to the straggling were determined with the help of Monte Carlo simulations. Our results exhibit an increase in straggling with increasing ion velocity for channelled trajectories for all projectiles as well as for protons and helium in random geometry. In contrast for heavier ions, electronic straggling at low velocities does not decrease further but plateaus and even seems to increase again. We compare our experimental results with transport cross section calculations. The satisfying agreement for helium shows that electronic stopping for light ions is dominated by electron-hole pair excitations, and that the previously observed trajectory dependence can indeed be attributed to a higher mean charge state for random trajectories. No agreement is found for boron and silicon indicating the breakdown of models based solely on electron-hole pair excitations, and that local electron-promotion and charge-exchange events significantly contribute to energy loss at low velocities.

We present the most recent upgrades of the time-of-flight medium energy ion scattering (TOF-MEIS) system in Uppsala. The experimental chamber features a 6-axis goniometer with a sample annealing stage and two delay line detectors for composition analysis with high depth resolution and depth-resolved crystallography. The first detector has a large solid angle and can be moved circularly around the target position which allows to detect backscattered or transmitted ions. The second detector features increased flight distance from sample to detector resulting in enhanced energy resolution. A reduction from 1.4 keV to 0.4 keV is achieved for 100 keV He scattered from an Au surface for 1 ns time resolution, equivalent to a depth resolution of 6 A. This detector is equipped with an electrostatic electrode in order to deflect charged particles, which allows to study the charge state for scattered ions in the medium energy regime.

We demonstrate simultaneous measurements of the charge state, energy and angular distribution of keV ions in transmission experiments through self-supporting foils. Using a time-of-flight approach we have introduced an electrostatic deflection apparatus as an extension to existing medium energy ion scattering (MEIS) instrumentation. Different positive, neutral and negative charge states have been discriminated and quantified for initially singly charged beams of He, N, O and Ne in the energy range from 25 to 250 keV. In parallel, the ion energy after interaction with the target has been assessed for all detected particles, while particles can be discriminated by deflection angle. Self-supporting thin carbon foils were used as samples to benchmark our experiments with literature data where available.

We present a method to measure the kinetic energy of electrons emitted upon ion impact via their time-of-flight. Pulsed beams of H$^{+}$, D$_2^{+}$, He$^{+}$ and Ne$^{+}$ ions with velocities between 0.4 and 3.5 a.u. are transmitted through thin, self-supporting carbon and gold foils. Transmitted ions and secondary electrons are detected with a position-sensitive detector behind the sample and their respective energies are determined via their flight times. A coincidence criterium can be applied in the acquisition software. Measured electron energies range between 10 and 400 eV. Above ion velocities of 1 a.u. the most probable electron energy scales with ion velocity pointing towards a kinetic emission mechanism. At lower ion velocities, the electron energy stays constant and lies above the maximum energy transfer possible in a classical binary collision between ion and electron. Potential applications and technical challenges of measuring electron energies and yields with a time-of-flight approach are discussed., Comment: submitted to the VSI: 23rd International Workshop on Inelastic Ion-Surface Collisions proceedings

We have simultaneously measured angular distributions and electronic energy loss of helium ions and protons directly transmitted through self-supporting, single-crystalline silicon foils. We have compared the energy loss along channelled and random trajectories for incident ion energies between 50 keV and 200 keV. For all studied cases the energy loss in channelling geometry is found lower than in random geometry. In the case of protons, this difference increases with initial ion energy. This behaviour can be explained by the increasing contribution of excitations of core electrons, which are more likely to happen at small impact parameters accessible only in random geometry. For helium ions we observe a reverse trend - a decrease of the difference between channelled and random energy loss for increasing ion energy. Due to the inefficiency of core-electron excitations even at small impact parameters at such low energies, another mechanism has to be the cause for the observed difference. We provide evidence that the observation originates from reionisation events induced by close collisions of helium ions occurring only along random trajectories.

We present a thorough experimental study of electronic stopping of H, He, B, N, Ne and Al ions in TiN with the aim to learn about the energy loss mechanisms of slow ions. The energy loss was measured by means of time-of-flight medium-energy ion scattering. Thin films of TiN on silicon with a δ-layer of W at the TiN/Si interface were used as targets. We compare our results to non-linear density functional theory calculations, examining electron-hole pair excitations by screened ions in a free electron gas in the static limit, with a density equivalent to the expected value for TiN. These calculations predict oscillations in the electronic stopping power for increasing atomic number Z1 of the projectile. An increasing discrepancy between our experimental results and predictions by theory for increasing Z1 was observed. This observation can be attributed to contributions from energy loss channels different from electron-hole pair excitation in binary Coulomb collisions.

Secondary ions emitted from solids upon ion impact are studied in a time-of-flight medium energy ion scattering (ToF-MEIS) set-up. In order to investigate characteristics of the emission processes and to evaluate the potential for surface and thin film analysis, experiments employing TiN and Al samples were conducted. The ejected ions exhibit a low initial kinetic energy of a few eV, thus, requiring a sufficiently high acceleration voltage for detection. Molecular and atomic ions of different charge states originating both from surface contaminations and the sample material are found, and relative yields of several species were determined. Experimental evidence that points towards a predominantly electronic sputtering process is presented. For emitted Ti target atoms an additional nuclear sputtering component is suggested.

The specific energy loss of medium-energy hydrogen, helium, and neon ions in titanium nitride is studied. Electronic stopping cross sections of ions in the energy range of 3--140 keV/amu were measured in backscattering geometry using time-of-flight medium-energy ion scattering, from the energy loss experienced in TiN thin films on Si. For the lowest energies, data for H show a strong deviation from Bragg's rule. For hydrogen and Ne ions, electronic stopping exhibits velocity proportionality at ion velocities below 1 a.u. Comparison to density functional theory calculations of the stopping power yields very good agreement for H, while for He and Ne, the experimentally observed electronic stopping power is considerably higher than predicted. For He the extrapolation of the stopping power at low energies points to a nonvanishing energy loss at vanishing ion velocity. The present data can thus be taken as an indication of additional energy-loss processes different from direct electron-hole pair excitation. Furthermore, the results provide reference values for ion-beam-based analysis of TiN, a material with huge technological relevance.

Photodetachment thermometry on a beam of OH$^-$ in a cryogenic storage ring cooled to below 10 K is carried out using two-dimensional, frequency and time dependent photodetachment spectroscopy over 20 minutes of ion storage. In equilibrium with the low-level blackbody field, we find an effective radiative temperature near 15 K with about 90% of all ions in the rotational ground state. We measure the J = 1 natural lifetime (about 193 s) and determine the OH$^-$ rotational transition dipole moment with 1.5% uncertainty. We also measure rotationally dependent relative near-threshold photodetachment cross sections for photodetachment thermometry., Manuscript LaTeX with 5 pages, 3 figures, and 1 table plus LaTeX supplement with 12 pages, 3 figures and 3 tables. This article has been accepted by Physical Review Letters

We have studied the photodissociation of CH^{+} in the Cryogenic Storage Ring at ambient temperatures below 10 K. Owing to the extremely high vacuum of the cryogenic environment, we were able to store CH^{+} beams with a kinetic energy of ∼60 keV for several minutes. Using a pulsed laser, we observed Feshbach-type near-threshold photodissociation resonances for the rotational levels J=0-2 of CH^{+}, exclusively. In comparison to updated, state-of-the-art calculations, we find excellent agreement in the relative intensities of the resonances for a given J, and we can extract time-dependent level populations. Thus, we can monitor the spontaneous relaxation of CH^{+} to its lowest rotational states and demonstrate the preparation of an internally cold beam of molecular ions.

The cryogenic storage ring (CSR) for positive and negative atomic, molecular and cluster ions is starting operation at the Max Planck Institute for Nuclear Physics in Heidelberg.