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11 results on '"Susoma, Jannatul"'

2. A MoSe2 /WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths

Author

Xue, Hui, primary, Wang, Yadong, additional, Dai, Yunyun, additional, Kim, Wonjae, additional, Jussila, Henri, additional, Qi, Mei, additional, Susoma, Jannatul, additional, Ren, Zhaoyu, additional, Dai, Qing, additional, Zhao, Jianlin, additional, Halonen, Kari, additional, Lipsanen, Harri, additional, Wang, Xiaomu, additional, Gan, Xuetao, additional, and Sun, Zhipei, additional

Published
2018
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3. Direct transfer of wafer-scale graphene films

Author

Kim, Maria, primary, Shah, Ali, additional, Li, Changfeng, additional, Mustonen, Petri, additional, Susoma, Jannatul, additional, Manoocheri, Farshid, additional, Riikonen, Juha, additional, and Lipsanen, Harri, additional

Published
2017
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8. Tunable Graphene-GaSe Dual Heterojunction Device

Author

Kim, Wonjae, primary, Li, Changfeng, additional, Chaves, Ferney A., additional, Jiménez, David, additional, Rodriguez, Raul D., additional, Susoma, Jannatul, additional, Fenner, Matthias A., additional, Lipsanen, Harri, additional, and Riikonen, Juha, additional

Published
2016
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10. Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices

Author

Tetsuo Kodera, Yoshifumi Nakamine, Susoma Jannatul Ferdous, Shunri Oda, Koichi Usami, and Yukio Kawano

Subjects
Surface (mathematics), Materials science, Sinc function, business.industry, General Engineering, General Physics and Astronomy, Nanotechnology, Electron, Chemical vapor deposition, Electrical resistivity and conductivity, Optoelectronics, Degradation (geology), business, Scaling, Communication channel
Abstract

Silicon nanocrystal (SiNC)-based thin-film devices have been fabricated, where the idea of scaling down of channel length was implemented in such a way that very few SiNCs can be fitted inside the channel in the channel length direction in order to decrease the number of barriers to increase electrical conductivity. In this study, we have demonstrated the scaling down of channel length to 20 nm in order to reduce the number of barriers provided by each of the SiNCs, which are fabricated using a very high-frequency (VHF) plasma-enhanced chemical vapor deposition (CVD) system with a diameter of 10±1 nm. A high electrical conductivity has been achieved by optimizing channel length. In addition, we have demonstrated the surface nitridation of SiNCs to protect the highly reactive surface of SiNCs from further natural oxidization and successfully suppressed the degradation of transport properties.

Published
2013
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11. A MoSe2/WSe2 Heterojunction‐Based Photodetector at Telecommunication Wavelengths.

Author

Xue, Hui, Wang, Yadong, Dai, Yunyun, Kim, Wonjae, Jussila, Henri, Qi, Mei, Susoma, Jannatul, Ren, Zhaoyu, Dai, Qing, Zhao, Jianlin, Halonen, Kari, Lipsanen, Harri, Wang, Xiaomu, Gan, Xuetao, and Sun, Zhipei

Subjects
MOLYBDENUM selenides, PHOTODETECTORS, SEMICONDUCTORS, SOLUTION (Chemistry), BAND gaps, TELECOMMUNICATION
Abstract

van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few‐layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high‐sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent‐to‐dark current ratio reach up to 127 mA W−1 and 1.9 × 104 mW−1, respectively. The results not only provide a promising solution to realize high‐performance vdW telecommunication band photodetectors, but also pave the way for using sub‐bandgap engineering of two‐dimensional layered materials for photonic and optoelectronic applications. van der Waals heterostructures are demonstrated as building blocks for photonics and optoelectronics. Herein, a sub‐bandgap photodetection at λ = 1550 nm based on a MoSe2/WSe2 heterojunction is demonstrated. The high responsivity as well as high normalized photocurrent‐to‐dark current ratio indicate that the heterojunction device has promising applications in future optoelectronic. [ABSTRACT FROM AUTHOR]

Published
2018
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