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Halide vapor phase epitaxial (HVPE) Ga2O3 films were grown on c-plane sapphire and diamond substrates at temperatures up to 550 °C without the use of a barrier dielectric layer to protect the diamond surface. Corundum phase α-Ga2O3 was grown on the sapphire substrates, whereas the growth on diamond resulted in regions of nanocrystalline β-Ga2O3 (nc-β-Ga2O3) when oxygen was present in the HVPE reactor only during film growth. X-ray diffraction confirmed the growth of α-Ga2O3 on sapphire but failed to detect any β-Ga2O3 reflections from the films grown on diamond. These films were further characterized via Raman spectroscopy, which revealed the β-Ga2O3 phase of these films. Transmission electron microscopy demonstrated the nanocrystalline character of these films. From cathodoluminescence spectra, three emission bands, UVL′, UVL, and BL, were observed for both the α-Ga2O3/sapphire and nc-Ga2O3/diamond, and these bands were centered at approximately 3.7, 3.2, and 2.7 eV.

β-Ga2O3 is attractive for high temperature applications in harsh environments that cannot be tolerated by conventional electronics. Its wide bandgap allows operation at elevated temperatures, while it is also radiation hard. Radiation tolerance is an important factor while fabricating microelectronics and typical radiation damage suffered includes total dose effects, displacement damage, and single event effects. Ga2O3 appears to be more resistant to displacement damage than GaN and SiC, as expected from a consideration of their average bond strengths. EPR results of neutron irradiated, bulk samples suggested that octahedral gallium monovacancy defects were the main defects produced. Proton irradiation introduces two main paramagnetic defects in Ga2O3, which are stable at room temperature. Charge carrier removal can be explained by Fermi-level pinning far from the conduction band minimum due to gallium interstitials (Ga i ), vacancies (VG a), and antisites (GaO). While there are no experimental or simulation results for single event effects in Ga2O3 to this point, it has become worryingly apparent that while other wide bandgap semiconductors like SiC and GaN are robust against displacement damage and total ionizing dose, they display significant vulnerability to single event effects at high Linear Energy Transfer (LET) and at much lower biases than expected. We have also analyzed the transient response of β-Ga2O3 SBDs to heavy-ion strikes via TCAD simulations to understand the effect of various structural parameters. Using field metal rings has been reported to improve the breakdown voltage of these devices and biasing those rings can help control the breakdown voltage of the device. We find that such biased rings help in the removal of the charge deposited by the ion strike.

We present a review of the published experimental and simulation radiation damage results in Ga2O3. All of the polytypes of Ga2O3 are expected to show similar radiation resistance as GaN and SiC, considering their average bond strengths. However, this is not enough to explain the orders of magnitude difference of the relative resistance to radiation damage of these materials compared to GaAs and dynamic annealing of defects is much more effective in Ga2O3. It is important to examine the effect of all types of radiation, given that Ga2O3 devices will potentially be deployed both in space and terrestrial applications. Octahedral gallium monovacancies are the main defects produced under most radiation conditions because of the larger cross-section for interaction compared to oxygen vacancies. Proton irradiation introduces two main paramagnetic defects in Ga2O3, which are stable at room temperature. Charge carrier removal can be explained by Fermi-level pinning far from the conduction band minimum due to gallium interstitials (Ga i ), vacancies (VGa), and antisites (GaO). One of the most important parameters to establish is the carrier removal rate for each type of radiation, since this directly impacts the current in devices such as transistors or rectifiers. When compared to the displacement damage predicted by the Stopping and Range of Ions in Matter(SRIM) code, the carrier removal rates are generally much lower and take into account the electrical nature of the defects created. With few experimental or simulation studies on single event effects (SEE) in Ga2O3, it is apparent that while other wide bandgap semiconductors like SiC and GaN are robust against displacement damage and total ionizing dose, they display significant vulnerability to single event effects at high Linear Energy Transfer (LET) and at much lower biases than expected. We have analyzed the transient response of β-Ga2O3 rectifiers to heavy-ion strikes via TCAD simulations. Using field metal rings improves the breakdown voltage and biasing those rings can help control the breakdown voltage. Such biased rings help in the removal of the charge deposited by the ion strike.

Highly resistive undoped p-type gallium oxide samples were subjected to cumulative proton irradiation with energies ranging from 25 to 70 keV and doses in the 1.6 × 1014–3.6 × 1014 cm−2 range. Proton irradiation resulted in up to a factor of 2 reduction of minority electron diffusion length in the samples for temperatures between ∼ 300 and 400 K. Electron injection into the samples under test using a scanning electron microscope beam leads to pronounced elongation of diffusion length beyond the pre-irradiation values, thus demonstrating stable (days after injection) recovery of adverse radiation impact on minority carrier transport. The activation energy of 91 meV estimated from the temperature dependent diffusion length vs electron injection duration experiments is likely related to the local potential barrier height for native defects associated with the phenomenon of interest.

The purpose of this study is to experimentally determine the effect of electron injection on the minority carrier lifetime in Gallium Nitride. Earlier studies of electron injection in GaN have provided an indirect proof of lifetime enhancement through the increase of minority carrier diffusion length and the decrease in the cathodoluminescence intensity. These changes in the minority transport properties, caused by electron injection, are brought forth through defect and trap levels in the bandgap. Furthermore, a thorough discussion of the electron injection model and role of these trap levels is presented.

GaN is a robust and stable wide bandgap material with a bandgap of 3.4eV. It is extensively studied for applications in light emitting diodes, high-power electronics and optoelectronics. Radiation hardness is another attractive attribute of GaN due to its atomic structure and wide bandgap with possible electronic applications in lower Earth satellite orbits. Like other wide bandgap materials, GaN also suffers from short diffusion length, which has been earlier reported to be ~100-300 nm. Minority carrier transport properties such as carrier lifetime (τ) and diffusion length (L) are of vital importance in bipolar and minority-carrier devices. Previously, it was shown that low energy electron beam irradiation (up to 30 keV) for extended duration (up to 3000 seconds) can be used to enhance L by a factor of 4 at room temperature in other wide bandgap materials like p-ZnO and β-Ga2O3 [1-3] . It was suggested that the increase in L is associated with trapping of non-equilibrium electrons on meta-stable trap levels acting as recombination centers. Dependence of L on τ is given by the relation L=√(Dτ) , where D is the diffusion coefficient. Therefore, removal of recombination centers, due to electron trapping on them would, in turn, increase τ, and hence L. Another effect of low energy electron irradiation, apart from increasing τ, is manifested in decrease in the continuous CL intensity. In this work, unintentionally doped GaN was studied using Electron Beam-Induced Current (EBIC), Continuous (CL) and Time-Resolved Cathodoluminescence (TRCL) techniques to independently measure L and τ, and verify the validity of the proposed model[4]. Measurements were conducted on GaN Schottky rectifiers (~400 µm GaN layer grown by Halide Vapor Phase Epitaxy on sapphire) with electron concentration of ~1x1017 cm-3. L was found to increase from 306 nm to 347 nm for a maximum electron injected charge density of 117.5 nC/µm3 and saturating at 60 nC/µm3. For the same maximum and saturation injected charge densities, τ was found to increase from 77 ps to 101 ps. Fig. 1a shows a plot of TRCL streaks for bare region and the region with maximum injected charge density. Slower decay of streak signal indicates longer lifetime in the electron-injected region. Fig. 1b depicts the plot of L and √τ as a function of injected charge density at room temperature. A clear linear dependence (L=√(Dτ)) is seen till saturation charge density of ~60 nC/µm3. Furthermore, mobility values (from the diffusion coefficient) for various charge injection doses were obtained for the ultrafast regime of TRCL spectroscopy. References: L. Chernyak, A. Osinsky, and A. Schulte, Solid State Electron. 45(9), 1687 (2001). O. Lopatiuk-Tirpak, L. Chernyak, F. X. Xiu, J. L. Liu, S. Jang, F. Ren, S. J. Pearton, K. Gartsman, Y. Feldman, A. Osinsky, and P. Chow, J. Appl. Phys. 100(8), 086101 (2006). S. Modak, L. Chernyak, S. Khodorov, I. Lubomirsky, J. Yang, F. Ren, and S. J. Pearton, ECS J. Solid State Sci.Technol. 8(7), Q3050 (2019). S. Modak, L. Chernyak, M. Xian, F. Ren, S.J. Pearton, S. Khodorov, I. Lubomirsky, A. Ruzin, and Z. Dashevsky, J. Appl. Phys. 128(8), 085702 (2020). Figure Caption: Fig. 1 (a) Recorded streak signal for the bare region (τ=77 ps) and electron injected region with maximum dose (τ=101 ps). Lifetime is higher for the injected region with lower decay rate. Inset shows photon counts in a raw streak image. (b) Linear dependence between measured L (left) and √τ (right) as a function of injected charge density. Both parameters saturate at ~60 nC/µm3 and further charge deposition produces no effect. Figure 1

The impact of electron injection on minority carrier (hole) diffusion length and lifetime at variable temperatures was studied using electron beam-induced current, continuous, and time-resolved cathodoluminescence techniques. The hole diffusion length increased from 306 nm to 347 nm with an electron injection charge density up to 117.5 nC/μm3, corresponding to the lifetime changing from 77 ps to 101 ps. Elongation of the diffusion length was attributed to the increase in the non-equilibrium carrier lifetime, which was determined using ultrafast time-resolved cathodoluminescence and related to non-equilibrium carrier trapping on gallium vacancy levels in the GaN forbidden gap.

Photonic microcavity coupling of a subwavelength hole-disk array, a two-element metal/dielectric composite structure with enhanced extraordinary transmission, leads to 100% coupling of incident light to the cavity system and subsequent absorption. This light-funneling process arises from the temporal and spatial coupling of the broadband localized surface plasmon resonance on the coupled hole-disk array and the photonic modes of the optical cavity, which induces spectral narrowing of the perfect absorption of light. A simple nanoimprint lithography-based large-area fabrication process paves the path towards practical implementation of plasmonic cavity-based devices and sensors.

Functional surfaces that can control light across the electromagnetic spectrum are highly desirable. Plasmonic nanostructures can assume this role by exhibiting dimension-tunable resonances that span multiple electromagnetic regimes. However, changing these structural parameters often impacts the higher-order resonances and spectral features in lower-wavelength domains. In this study, we discuss a cavity-coupled plasmonic system with resonances that are tunable across the 3–5 or 8–14 μm infrared bands while retaining near-invariant spectral properties in the visible domain. This result is accomplished by regime-dependent resonance mechanisms and their dependence on independent structural parameters. Through the identification and constraint of key parameters, we demonstrate multispectral data encoding, where images, viewable in the infrared spectral domain, appear as uniform areas of color in the visible domain—effectively hiding the information. Fabricated by large area nanoimprint lithography and compatible with flexible surfaces, the proposed system can produce multifunctional coatings for thermal management, camouflage, and anti-counterfeiting., Undercover images: Hiding in plasmonic sight A new device employing the science of ‘plasmonics’ allows control over the interaction of various wavelengths of light with its components, with implications for camouflage and anti-counterfeit applications. The device, designed by Debashis Chanda and colleagues of the University of Central Florida, is formed of a dielectric layer patterned with regularly-spaced nano-sized holes, sandwiched between a reflective metallic mirror and a thin upper gold layer with holes corresponding to the middle layer’s discs. Images are encoded onto the surface in spun coat films of thermoplastic. Changing the diameters and depths of the holes changes how different wavelengths of light react with the materials. The team was able to tune the device’s parameters in a way that made the surface appear as a uniform block of colour unless viewed through an infrared camera over a specific band, when the image can be seen.

We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼1014 cm−2) Si-doped β-Ga2O3 Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 °C to 289 nm at 120 °C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β-Ga2O3 Schottky rectifiers is presented.

Frequency selective detection of low energy photons is a scientific challenge using natural materials. A hypothetical surface which functions like a light funnel with very low thermal mass in order to enhance photon collection and suppress background thermal noise is the ideal solution to address both low temperature and frequency selective detection limitations of present detection systems. Here, we present a cavity-coupled quasi-three dimensional plasmonic crystal which induces impedance matching to the free space giving rise to extraordinary transmission through the sub-wavelength aperture array like a “light funnel” in coupling low energy incident photons resulting in frequency selective perfect (~100%) absorption of the incident radiation and zero back reflection. The peak wavelength of absorption of the incident light is almost independent of the angle of incidence and remains within 20% of its maximum (100%) up to θi≤45˚. This perfect absorption results from the incident light-driven localized edge “micro-plasma” currents on the lossy metallic surfaces. The wide-angle light funneling is validated with experimental measurements. Further, a super-lattice based electronic biasing circuit converts the absorbed narrow linewidth (Δλ/λ0< 0.075) photon energy inside the sub-wavelength thick film (< λ/100) to voltage output with high signal to noise ratio close to the theoretical limit. Such artificial plasmonic surfaces enable flexible scaling of light funneling response to any wavelength range by simple dimensional changes paving the path towards room temperature frequency selective low energy photon detection.

The interactions between plasmonic and photonic modes of a cavity-coupled plasmonic crystal are studied in diffraction and diffractionless regimes, which lead us to the understanding of coherent interactions between electron plasma, higher order cavity, and diffraction modes. The strong interaction between plasmonic and photonic modes is shown to enhance as well as suppress surface plasmon resonance based on cavity phase relation. Numerical and analytical approaches are developed to accurately explain the physics of the interactions evident in their characteristic dispersion graphs. Further experimental measurements confirm the theoretical predictions.

Thin-film resonant absorbers for the far-IR spectral range were fabricated, characterized, and modeled. The 3-μm-thick structure comprises a periodic surface array of metal squares, a dielectric spacer and a metallic ground plane. Up to 95% absorption for the fundamental band at ~53.5μm wavelength (5.6 THz) is achieved experimentally. Absorption bands are independent of the structure period and only weakly dependent on polarization and incident angle. The results are well explained in terms of standing-wave resonances within individual metal-dielectric-metal cavities. The structure has application as a wavelength selective coating for far-IR bolometers.

We studied periodic and quasi-periodic coupled waveguides by finite difference time domain simulations. Bloch oscillations and possible light collimation observed in these structures which could be promising for light coupling applications.