Search

A lot of progress has been made in rechargeable lithium-ion battery (LIB) technology research in the last decade, even so, renewed developmental efforts must be pursued to better improve energy density, capacity retention and rate capability. This review discusses the role that one-dimensional (1D) nanomaterials can play towards development of next-generation LIBs. Electrode nanoengineering, interfacial kinetics and high-volume manufacturing are critical issues limiting energy density, electrochemical performance and material viability. These points are discussed, as are the advantages of deploying these nanomaterials in rechargeable LIB devices. Current data from literature is indicative of laboratory-scale success as these 1D nanomaterials display excellent capacity retention, high-rate capability and long cycle life emanating from high mechanical strength, resilience and short charge carrier diffusion distance. However, significant advances are required to translate these achievements into commercial scale deployment. [ABSTRACT FROM AUTHOR]

The Raman spectrum of gallium oxide (β-Ga2O3 nanowires with [401] growth direction is identical to that of the bulk Ga2O3 [Y. C. Choi et al. Adv. Mater. 12, 746 (200] while that of β-Ga2O3 nanowires with [401] growth direction is redshifted by 4–23 cm-1 [Y. H. Gao et al. Appl. Phys. Lett. 81, 2267 (2002)]. Here we report the Raman and Fourier transform infrared spectra of β-Ga2O3 nanowires with [110] growth direction which is blueshifted relative to the bulk spectra by ∼10–40 cm-1. Based on a first principles calculation of the strain dependence of Raman mode frequencies in bulk β-Ga2O–, we correlate the observed frequency shifts to growth-direction-induced internal strains in the nanowires. [ABSTRACT FROM AUTHOR]

We report the first ever demonstration of using silane directly in the gas phase and molten gallium in a microwave plasma for bulk nucleation and growth of single-crystal quality silicon nanowires. Multiple nanowires nucleated and grew from micron- to millimetre-sized gallium droplets. The resulting nanowires were tens to hundreds of nanometres in diameter and were tens to hundreds of microns long. Transmission electron microscopy results confirmed the nanowires to be single crystalline, devoid of structural defects, and grown along the [inline image] direction. The as-synthesized silicon nanowires were sheathed with an ultrathin (<1 nm) non-uniform native oxide amorphous layer that could be directly used in the assembly of electronic and optoelectronic devices. [ABSTRACT FROM AUTHOR]

Here, we report direct band gap transition for Gallium Phosphide (GaP) when alloyed with just 1-2 at% antimony (Sb) utilizing both density functional theory based computations and experiments. First principles density functional theory calculations of GaSbxP(1-x) alloys in a 216 atom supercell configuration indicate that an indirect to direct band gap transition occurs at x = 0.0092 or higher Sb incorporation into GaSbxP(1-x). Furthermore, these calculations indicate band edge straddling of the hydrogen evolution and oxygen evolution reactions for compositions ranging from x = 0.0092 Sb up to at least x = 0.065 Sb making it a candidate for use in a Schottky type photoelectrochemical water splitting device. GaSbxP(1-x) nanowires were synthesized by reactive transport utilizing a microwave plasma discharge with average compositions ranging from x = 0.06 to x = 0.12 Sb and direct band gaps between 2.21 eV and 1.33 eV. Photoelectrochemical experiments show that the material is photoactive with p-type conductivity. This study brings attention to a relatively uninvestigated, tunable band gap semiconductor system with tremendous potential in many fields.