Search

Researchers demonstrate the growth of epitaxial metastable diamond-structure Ge1-xSnx alloys, where x was less than 0.26, on Ge(001) at low temperatures. The composition of the alloys was uniform but the epitaxial thickness was limited due to the low temperatures required to prevent phase separation and Sn surface segregation. There were three sublayers. The epitaxial sublayerwas perfect, the terminal sublayer was amorphous, and the interface was rough.

CNx thin films were subjected to an electron energy loss spectroscopy analysis. Results, which covered structure, bonding and composition, were used for an extended energy loss fine structure spectroscopy examination on interatomic distances. Results of the extended study indicate the presence of a high frequency component with an approximate interatomic distance of 7.3 A.

The deposition of 3C-Sic films on (III)-oriented Si substrates is effected by a reactive magnetron sputtering in a mixed Ar/CH4 discharge. The crystalline structure and the carbon content depend on the CH4 and Ar pressures. Epitorical stoichiometric films, at total pressures of 3m Torr and a CH4 partial pressure of 0.6m Torr, are determined at low growth temperatures of 850 degrees centigrade. X-ray diffractions using reciprocal space map texture scans and 360 degree phi scans establish the epitaxial nature of the films.

The effects of ion irradiation on the microstructure and microchemistry of polycrystalline metastable Ti0.5Al0.5N alloy films grown by magnetron sputtering were investigated. An ultra-high-vacuum magnetron sputter-deposition system was used to deposit the basic elements onto a substrate. The energy discharges during deposition varied from 20 to 500 electron volts. Transmission electron microscopy and x-ray diffractometry results indicate that the average energy deposited per metal atom cannot be used as a universal parameter for describing film growth.

The electrical and optical properties of carbon-nitride CN[sub x] films (0≤x≤0.25) deposited by unbalanced reactive magnetron sputtering from a graphite target in mixed Ar/N[sub 2] discharges at a substrate temperature of 350 °C have been investigated. Pure C films exhibit a dark conductivity at room temperature of 25 Ω[sup -1] cm[sup -1], which grows up to 250 Ω[sup -1] cm[sup -1] for CN[sub x] films with N content of 20%. For CN[sub x] films, temperature-dependent conductivity measurements suggest that two electron conduction processes exist in the investigated temperature range 130

Deals with a study which deposited titanium films onto high-density polyethylene samples by electron-beam evaporation. Experimental details; Results; Discussion; Conclusions.

presents a study which measured the microhardness and electrical resistivity of thin Hf-N films. Details of experimental techniques used; Influence of substrate bias on the properties of stoichiometric HfN films; Properties of HfN films.

Presents information on a study which analyzed the effects of the incident ion/metal flux ratio on the microstructure, texture and stoichiometry of polycrystalline TiN films grown by ultrahigh-vacuum reactive-magnetron sputtering. Experimental procedure; Probe measurements; Results of TiN stoichiometry.

Investigates the formation of polyhedral N[sub2] bubbled in single-crystal titanium nitride (TiN). Preparation of the TiN films; Results.

Reports on the growth, structure and physical properties of single-phase metastable fcc Cu[sub1-x]Cr[subx] solid solutions. Oxidation rate of Cu[sub0.9]Cr[sub0.1]; Equilibrium phase diagram for the copper/chromium system; Measurement of the room-temperature resistivities of as-deposited films.

Presents a study that used a single-grid broad-beam ion source for low-energy accelerated indium (In)[sub+] ion beam doping during growth of silicon layers by molecular-beam epitaxy. Indium incorporation behavior; Use of secondary ion mass spectroscopy; Determination of the abrupt doping profiles.

Presents a study that investigated the growth and characteristics of single-crystal titanium nitride/vanadium nitride strained-layer superlattices. Methodology; Analysis of the microstructure of the superlattices using transmission electron microscopy; Determination of the hardness of the superlattices; Examination of the electron diffraction patterns from the superlattices.

Presents a study that examined the defect structure of epitaxial titanium nitride (TiN) films deposited on magnesium oxide substrates using transmission electron microscopy (TEM). Methodology; Analysis of the TEM micrographs of TiN films; Effect of low-energy irradiation during film growth on epitaxial TiN film.

Presents a study which investigated the composition and structure of reactively magnetron sputtered thin Hf-N films. Details of experimental techniques used; Overview of previous studies on the structure of Hf-N films; Discussion on the crystallographic structure of the thin films.

Presents a study that used reactive magnetron sputtering in a mixed argon/carbon-hydrogen discharge to deposit carbon-silicon carbide films on silicon substrates. Dependence of the carbon content as well as the crystalline structure on both the carbon-hydrogen and argon pressures; Attainment of epitaxial stoichiometric films; Establishment of the epitaxial nature of the films by x-ray diffraction.

Presents a study which reported results of an investigation of the structure, electrical transport properties and the temperature coefficient of resistance of epitaxial TiN/VN superlattices as a function of the superlattice period. Experimental procedure; Microstructure and interface abruptness of superlattices; Plot of the resistivity in the direction of superlattice structures.

Presents a study which investigated ambipolar diffusion in strained Si[sub1-x]Ge[subx](100) layers grown by molecular beam epitaxy. Experimental details; Results and discussion; Conclusion.

Provides information on a study that discussed the defect structure and phase transitions in epitaxial metastable cubic Ti[sub0.5]Al[sub0.5]N alloys grown on MgO(001) by ultra-high-vacuum magnetron sputter deposition. Occurrence of surface-initiated spinodal decomposition; Type of thin films used to increase the lifetimes of mechanical components; Areas where titanium nitride can be applied.