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Optical logic gates based on nonlinear optical property of material with ultrafast response speed and excellent computational processing power can break the performance bottleneck of electronic transistors. As one of the layered 2D materials, Ta2NiS5 exhibits high anisotropic mobility, exotic electrical response, and intriguing optical properties. Due to the low-symmetrical crystal structures, it possesses in-plane anisotropic physical properties. The optical absorption information of Ta2NiS5 is investigated by anisotropic linear absorption spectra, femtosecond laser intensity scanning (I-scan), and non-degenerate pump-probe technology. The I-scan results show a distinct maximum of ∼4.9 % saturable absorption (SA) and ∼4 % reverse saturable absorption (RSA) at different polarization directions of the incident laser. And, these unique nonlinear optical (NLO) properties originate from the anisotropic optical transition probability. Furthermore, the novel Ta2NiS5-based all-optical logic gates are proposed by manipulating the NLO absorption processes. And, the all-optical OR and NOR logic gates possess an ultrafast response speed approaching 1.7 THz. Meanwhile, an all-optical information transmission method with higher security and accuracy is achieved, which has promising potential to avoid the disclosure of information. This work provides a new path for designing versatile and novel optical applications based on Ta2NiS5 materials.

All-inorganic cesium lead halide perovskite quantum dots have recently received much attention as promising optoelectronic materials with great luminescent properties and bright application prospect in lighting, lasing, and photodetection. Although notable progress has been achieved in lighting applications based on such media, the performance could still be improved. Here, we demonstrate that the light emission from the perovskite QDs that possess high intrinsic luminous efficiency can be greatly enhanced by using metallic thin films, a technique that was usually considered only useful for improving the emission of materials with low intrinsic quantum efficiency. Eleven-fold maximal PL enhancement is observed with respect to the emission of perovskite QDs on the bare dielectric substrate. We explore this remarkable enhancement of the light emission originating from the joint effects of enhancing the incident photonic absorption of QDs at the excitation wavelength by means of the zero-order optical asymmetric Fabry–Perot-like thin film interference and increasing the radiative rate and quantum efficiency at the emission wavelength mediated by surface plasmon polaritons. We believe that our approach is also potentially valuable for the enhancement of light emission of other fluorescent media with high intrinsic quantum efficiency.

Optical logic gates based on nonlinear optical property of material with ultrafast response speed and excellent computational processing power can break the performance bottleneck of electronic transistors. As one of the layered 2D materials, Ta2NiS5 exhibits high anisotropic mobility, exotic electrical response, and intriguing optical properties. Due to the low-symmetrical crystal structures, it possesses in-plane anisotropic physical properties. The optical absorption information of Ta2NiS5 is investigated by anisotropic linear absorption spectra, femtosecond laser intensity scanning (I-scan), and non-degenerate pump-probe technology. The I-scan results show a distinct maximum of ∼4.9 % saturable absorption (SA) and ∼4 % reverse saturable absorption (RSA) at different polarization directions of the incident laser. And, these unique nonlinear optical (NLO) properties originate from the anisotropic optical transition probability. Furthermore, the novel Ta2NiS5-based all-optical logic gates are proposed by manipulating the NLO absorption processes. And, the all-optical OR and NOR logic gates possess an ultrafast response speed approaching 1.7 THz. Meanwhile, an all-optical information transmission method with higher security and accuracy is achieved, which has promising potential to avoid the disclosure of information. This work provides a new path for designing versatile and novel optical applications based on Ta2NiS5 materials. [ABSTRACT FROM AUTHOR]

Blackbody‐sensitive uncooled infrared photodetectors with ultra‐broadband and ultrafast photoresponse have a profound impact on many areas of modern science and technology. However, it is a big challenge for both traditional photodetectors and emerging low‐dimensional ones to simultaneously have all the above characteristics. Here, this challenge is addressed by establishing a Te/WTe2 heterostructure photodetector. The built‐in field of the heterostructure and the crossing conduction and valence bands of WTe2 jointly result in a high responsivity and a visible‐to‐long‐wavelength‐infrared photoresponse range. The peak responsivity (at the 3.3 µm wavelength) reaches 914 mA W−1 at zero bias and 8.51 A W−1 at 2 V bias. Further, the joint action coupled with the high mobility of Te and WTe2 promotes the 3‐dB bandwidth to 153 kHz. The self‐powered blackbody responsivity and specific detectivity reach 235.7 mA W−1 and 1.1 × 108 cm Hz1/2 W−1, respectively. The former increases to 5.82 A W−1 at 1 V bias. Moreover, this device is polarization‐sensitive with a contrast ratio of 2. This work reveals the potential of the Te/WTe2 heterostructure for high‐performance room‐temperature infrared photodetectors. [ABSTRACT FROM AUTHOR]

The layer-by-layer buildup of a two-dimensional transition metal dichalcogenide monolayer to form a stack is an important development for these materials, which performs many remarkable properties in the light–matter interaction. Herein, we find clear evidence of exciton–polaritons emerging from WS2/hBN/WS2 heterostructures embedded in a dielectric microcavity under optical pumping. A large Rabi splitting of 15 meV is observed at room temperature, which increases to 25 meV at 5 K. An all-dielectric Fabry–Pérot microcavity provides a simple but effective way to study the room temperature strong coupling between cavity photons and excitons. Our results pave the way for room-temperature polaritonic devices based on quantum-well van der Waals heterostructures. [ABSTRACT FROM AUTHOR]

The effect of adsorbed adatoms on the structural stability and electronic properties of monolayer N2P6 have been systematically studied via first-principles simulation methods. It is found that pristine N2P6 is an indirect 0.21 eV band gap semiconductor, with a pleated honeycomb-like structure similar to phosphorene. The calculation results show that adsorbed adatoms can modify the properties of monolayer N2P6 effectively. The degree of local distortion strongly depends on the electronegativity and size of adatoms, also the adsorption energy ranges from 0.3 to 5.8 eV depending on the species of adatoms. The electronic properties show metallic behavior with several adsorbed metal atoms (Li, Na, Al, K, Cu, Ni, and Zn) and some non-metal atoms (H, F, P, and Cl), while adsorbed O, S, Ca, and Si atoms still remain semiconductors. The systems of Ni and Zn adatoms show ferromagnetic behavior, and adsorbed Mg exhibits a half-metallic character. Our theoretical studies indicate that N2P6 possesses potential application in the field of gas sensors. [ABSTRACT FROM AUTHOR]

All-inorganic cesium lead halide perovskite quantum dots have recently received much attention as promising optoelectronic materials with great luminescent properties and bright application prospect in lighting, lasing, and photodetection. Although notable progress has been achieved in lighting applications based on such media, the performance could still be improved. Here, we demonstrate that the light emission from the perovskite QDs that possess high intrinsic luminous efficiency can be greatly enhanced by using metallic thin films, a technique that was usually considered only useful for improving the emission of materials with low intrinsic quantum efficiency. Eleven-fold maximal PL enhancement is observed with respect to the emission of perovskite QDs on the bare dielectric substrate. We explore this remarkable enhancement of the light emission originating from the joint effects of enhancing the incident photonic absorption of QDs at the excitation wavelength by means of the zero-order optical asymmetric Fabry–Perot-like thin film interference and increasing the radiative rate and quantum efficiency at the emission wavelength mediated by surface plasmon polaritons. We believe that our approach is also potentially valuable for the enhancement of light emission of other fluorescent media with high intrinsic quantum efficiency. [ABSTRACT FROM AUTHOR]