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BOUT++ turbulence simulations are conducted for a 60s steady-state long pulse high \{beta}p EAST grassy ELM discharge. BOUT++ linear simulations show that the unstable mode spectrum covers a range of toroidal mode numbers from low-n (n=10~15) peeling-ballooning modes (P-B) to high-n (n=40~80) drift-Alfv\'en instabilities. Nonlinear simulations show that the ELM crash is trigged by low-n peeling modes and fluctuation is generated at the peak pressure gradient position and radially spread outward into the Scrape-Off-Layer (SOL), even though the drift-Alfv\'en instabilities dominate the linear growth phase. However, drift-Alfv\'en turbulence delays the onset of the grassy ELM and enhances the energy loss with the fluctuation extending to pedestal top region. Simulations further show that if the peeling drive is removed, the fluctuation amplitude drops by an order of magnitude and the ELM crashes disappear. The divertor heat flux width is ~2 times larger than the estimates based on the HD model and the ITPA multi-tokamak scaling (or empirical Eich scaling) due to the strong radial turbulence transport.

We present a two-current-pulse temporal correlation experiment to study the intrinsic subnanosecond nonequilibrium magnetic dynamics of a nanomagnet during and following a pulse excitation. This method is applied to a model spin-transfer system, a spin valve nanopillar with perpendicular magnetic anisotropy. Two-pulses separated by a short delay (< 500 ps) are shown to lead to the same switching probability as a single pulse with a duration that depends on the delay. This demonstrates a remarkable symmetry between magnetic excitation and relaxation and provides a direct measurement of the magnetic relaxation time. The results are consistent with a simple finite temperature Fokker-Planck macrospin model of the dynamics, suggesting more coherent magnetization dynamics in this short time nonequilibrium limit than near equilibrium.

A pure spin current generated within a nonlocal spin valve can exert a spin transfer torque on a nanomagnet. This nonlocal torque enables new design schemes for magnetic memory devices that do not require the application of large voltages across tunnel barriers that can suffer electrical breakdown. Here we report a quantitative measurement of this nonlocal spin torque using spin-torque-driven ferromagnetic resonance. Our measurement agrees well with the prediction of an effective circuit model for spin transport. Based on this model, we suggest strategies for optimizing the strength of nonlocal torque., Comment: 21 pages, 3 figures. Supplement included

The effect of thermal fluctuations on spin-transfer switching has been studied for a broad range of time scales (sub-ns to seconds) in a model system, a uniaxial thin film nanomagnet. The nanomagnet is incorporated into a spin-valve nanopillar, which is subject to spin-polarized current pulses of variable amplitude and duration. Two physical regimes are clearly distinguished: a long pulse duration regime, in which reversal occurs by spin-transfer assisted thermal activation over an energy barrier, and a short time large pulse amplitude regime, in which the switching probability is determined by the spin angular momentum in the current pulse., Comment: 4 page, 3 figures

Spin-valve based nanojunctions incorporating Co|Ni multilayers with perpendicular anisotropy were used to study spin-torque driven ferromagnetic resonance (ST-FMR) in a nonlinear regime. Perpendicular field swept resonance lines were measured under a large amplitude microwave current excitation, which produces a large angle precession of the Co|Ni layer magnetization. With increasing rf power the resonance lines broaden and become asymmetric, with their peak shifting to lower applied field. A nonhysteretic step jump in ST-FMR voltage signal was also observed at high powers. The results are analyzed in in terms of the foldover effect of a forced nonlinear oscillator and compared to macrospin simulations. The ST-FMR nonhysteretic step response may have applications in frequency and amplitude tunable nanoscale field sensors., Comment: 4 pages, 3 figures, to appear in Applied Physics Letters

We calculate the efficiency with which magnetic tunnel junctions can be used as resonant detectors of incident microwave radiation via the spin-torque diode effect. The expression we derive is in good agreement with the sensitivities we measure for MgO-based magnetic tunnel junctions with an extended (unpatterned) magnetic pinned layer. However, the measured sensitivities are reduced below our estimate for a second set of devices in which the pinned layer is a patterned synthetic antiferromagnet (SAF). We suggest that this reduction may be due to an undesirable coupling between the magnetic free layer and one of the magnetic layers within the etched SAF. Our calculations suggest that optimized tunnel junctions should achieve sensitivities for resonant detection exceeding 10,000 mV/mW., Comment: 17 pages, 2 figures

We use spin-transfer-driven ferromagnetic resonance (ST-FMR) to measure the spin-transfer torque vector T in MgO-based magnetic tunnel junctions as a function of the offset angle between the magnetic moments of the electrodes and as a function of bias, V. We explain the conflicting conclusions of two previous experiments by accounting for additional terms that contribute to the ST-FMR signal at large |V|. Including the additional terms gives us improved precision in the determination of T(V), allowing us to distinguish among competing predictions. We determine that the in-plane component of has a weak but non-zero dependence on bias, varying by 30-35% over the bias range where the measurements are accurate, and that the perpendicular component can be large enough to be technologically significant. We also make comparisons to other experimental techniques that have been used to try to measure T(V)., Comment: 30 pages, 8 figures. Expanded with additional data and discussion. In press at PRB

We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also be the first device geometry in which spin-torque effects are applied to manipulate magnetic dynamics, in order to make nonvolatile magnetic random access memory. However, there remain many unanswered questions about such basic properties as the magnetoresistance of MTJs, how their properties change as a function of tunnel-barrier thickness and applied bias, and what are the magnitude and direction of the spin-transfer-torque vector induced by a tunnel current., Comment: 37 pages, 2 figures. Contribution to a collection of "Current Perspectives" articles on spin transfer torque now available in the Journal of Magnetism and Magnetic Materials

Spin-torque driven ferromagnetic resonance (ST-FMR) is used to study magnetic excitations in Co/Ni synthetic layers confined in nanojunctions. Field swept ST-FMR measurements were conducted with a magnetic field applied perpendicular to the layer surface. The resonance lines were measured under low amplitude excitation in a linear response regime. The resulting resonance fields were compared with those obtained using conventional rf field driven FMR on extended films with the same Co/Ni layer structure. A lower resonance field is found in confined structures. The effect of both dipolar fields acting on the Co/Ni layer emanating from other magnetic layers in the device and finite size effects on the spin wave spectrum are discussed., Comment: 3 pages, 3 figures

Spin-torque driven ferromagnetic resonance (ST-FMR) is used to study thin Co/Ni synthetic layers with perpendicular anisotropy confined in spin-valve based nanojunctions. Field swept ST-FMR measurements were conducted with a magnetic field applied perpendicular to the layer surface. The resonance lines were measured under low amplitude rf excitation, from 1 to 20 GHz. These results are compared with those obtained using conventional rf field driven FMR on extended films with the same Co/Ni layer structure. The layers confined in spin valves have a lower resonance field, a narrower resonance linewidth and approximately the same linewidth vs frequency slope, implying the same damping parameter. The critical current for magnetic excitations is determined from measurements of the resonance linewidth vs dc current and is in accord with the one determined from I-V measurements., Comment: 3 pages, 3 figures

Ferromagnetic resonance has been used to study the magnetic properties and magnetization dynamics of polycrystalline Fe$_{1-x}$V$_{x}$ alloy films with $0\leq x < 0.7$. Films were produced by co-sputtering from separate Fe and V targets, leading to a composition gradient across a Si substrate. FMR studies were conducted at room temperature with a broadband coplanar waveguide at frequencies up to 50 GHz using the flip-chip method. The effective demagnetization field $4 \pi M_{\mathrm{eff}}$ and the Gilbert damping parameter $\alpha$ have been determined as a function of V concentration. The results are compared to those of epitaxial FeV films.

Spin-polarized currents can transfer spin angular momentum to a ferromagnet, generating a torque that can efficiently reorient its magnetization. Achieving quantitative measurements of the spin-transfer-torque vector in magnetic tunnel junctions (MTJs) is important for understanding fundamental mechanisms affecting spin-dependent tunneling, and for developing magnetic memories and nanoscale microwave oscillators. Here we present direct measurements of both the magnitude and direction of the spin torque in Co60Fe20B20/MgO/Co60Fe20B20 MTJs. At low bias V, the differential torque vector d{tau}/dV lies in the plane defined by the electrode magnetizations, and its magnitude is in excellent agreement with a prediction for highly-spin-polarized tunneling. With increasing bias, the in-plane component d{tau}_{parallel}/dV remains large, in striking contrast to the decreasing magnetoresistance ratio. The differential torque vector also rotates out of the plane under bias; we measure a perpendicular component tau_{perp}(V) with bias dependence proportional to V^2 for low V, that becomes as large as 30% of the in-plane torque., Comment: 33 pages, 9 figures

The switching probability of a single-domain ferromagnet under spin-current excitation is evaluated using the Fokker-Planck equation(FPE). In the case of uniaxial anisotropy, the FPE reduces to an ordinary differential equation in which the lowest eigenvalue $\lambda_1$ determines the slowest switching events. We have calculated $\lambda_1$ by using both analytical and numerical methods. It is found that the previous model based on thermally distributed initial magnetization states \cite{Sun1} can be accurately justified in some useful limiting conditions., Comment: The 10th Joint MMM/Intermag, HA-09

We report on room temperature ferromagnetic resonance (FMR) studies of [$t$ Co$|2t$ Ni]$\times$N sputtered films, where $0.1 \leq t \leq 0.6$ nm. Two series of films were investigated: films with same number of Co$|$Ni bilayer repeats (N=12), and samples in which the overall magnetic layer thickness is kept constant at 3.6 nm (N=1.2/$t$). The FMR measurements were conducted with a high frequency broadband coplanar waveguide up to 50 GHz using a flip-chip method. The resonance field and the full width at half maximum were measured as a function of frequency for the field in-plane and field normal to the plane, and as a function of angle to the plane for several frequencies. For both sets of films, we find evidence for the presence of first and second order anisotropy constants, $K_1$ and $K_2$. The anisotropy constants are strongly dependent on the thickness $t$, and to a lesser extent on the total thickness of the magnetic multilayer. The Land\'e g-factor increases with decreasing $t$ and is practically independent of the multilayer thickness. The magnetic damping parameter $\alpha$, estimated from the linear dependence of the linewidth, $\triangle H$, on frequency, in the field in-plane geometry, increases with decreasing $t$. This behaviour is attributed to an enhancement of spin-orbit interactions with $t$ decreasing and in thinner films, to a spin-pumping contribution to the damping., Comment: 18 pages, 13 figures

Spin transfer in asymmetric Co/Cu/Co bilayer magnetic nanopillars junctions has been studied at low temperature as a function of free-layer thickness. The phase diagram for current-induced magnetic excitations has been determined for magnetic fields up to 7.5 T applied perpendicular to the junction surface and free-layers thicknesses from 2 to 5 nm. The junction magnetoresistance is independent of thickness. The critical current for magnetic excitations decreases linearly with decreasing free-layer thickness, but extrapolates to a finite critical current in the limit of zero thickness. The limiting current is in quantitative agreement with that expected due to a spin-pumping contribution to the magnetization damping. It may also be indicative of a decrease in the spin-transfer torque efficiency in ultrathin magnetic layers., Comment: 5 Pages, 4 Figures

We present room temperature ferromagnetic resonance (FMR) studies of polycrystalline ||Pt/10 nm Cu/t Co/10 nm Cu/Pt|| films as a function of Co layer thickness (1 < t < 10 nm) grown by evaporation and magnetron sputtering. FMR was studied with a high frequency broadband coplanar waveguide (up to 25 GHz) using a flip-chip method. The resonance field and the linewidth were measured as a function of the ferromagnetic layer thickness. The evaporated films exhibit a lower magnetization density (Ms = 1131 emu/cm^3) compared to the sputtered films (Ms= 1333 emu/cm^3), with practically equal perpendicular surface anisotropy (Ks ~ -0.5 erg/cm^2). For both series of films, a strong increase of the linewidth was observed for Co layer thickness below 3 nm. For films with a ferromagnetic layer thinner than 4 nm, the damping of the sputtered films is larger than that of the evaporated films. The thickness dependence of the linewidth can be understood in term of the spin pumping effect, from which the interface spin mixing conductance g^{\uparrow\downarrow}S^{-1} is deduced.

Current-induced magnetic excitations in Co/Cu/Co bilayer nanopillars ($\sim$50 nm in diameter) have been studied experimentally at low temperatures for large applied fields perpendicular to the layers. At sufficiently high current densities excitations, which lead to a decrease in differential resistance, are observed for both current polarities. Such bipolar excitations are not expected in a single domain model of spin-transfer. We propose that at high current densities strong asymmetries in the longitudinal spin accumulation cause spin-wave instabilities transverse to the current direction in bilayer samples, similar to those we have reported for single magnetic layer junctions., Comment: 4 pages, 4 figures+ 2 additional jpg figures (Fig. 2d and Fig. 3) high resolution figures and recent related articles are available at: http://www.physics.nyu.edu/kentlab/news.html

We present a method to measure the effective field contribution to spin-transfer-induced interactions between the magnetic layers in a trilayer nanostructure, which enables spin-current effects to be distinguished from the usual charge-current-induced magnetic fields. This technique is demonstrated on submicron Co/Cu/Co nanopillars. The hysteresis loop of one of the magnetic layers in the trilayer is measured as a function of current while the direction of magnetization of the other layer is kept fixed, first in one direction and then in the opposite direction. These measurements show a current-dependent shift of the hysteresis loop which, based on the symmetry of the magnetic response, we associate with spin-transfer. The observed loop-shift with applied current at room temperature is reduced in measurements at 4.2 K. We interprete these results both in terms of a spin-current dependent effective activation barrier for magnetization reversal and a spin-current dependent effective magnetic field. From data at 4.2 K we estimate the magnitude of the spin-transfer induced effective field to be $\sim 1.5 \times 10^{-7} $ Oe cm$^2$/A, about a factor of 5 less than the spin-transfer torque., Comment: 6 pages, 4 figures

Current-induced magnetic excitations in Cu/Co/Cu single layer nanopillars (~50 nm in diameter) have been studied experimentally as a function of Co layer thickness at low temperatures for large applied fields perpendicular to the layers. For asymmetric junctions current induced excitations are observed at high current densities for only one polarity of the current and are absent at the same current densities in symmetric junctions. These observations confirm recent predictions of spin-transfer torque induced spin wave excitations in single layer junctions with a strong asymmetry in the spin accumulation in the leads., Comment: 4 pages, 3 figures, submitted to Phys. Rev. Lett

Current-induced magnetization dynamics in Co/Cu/Co trilayer nanopillars (~100nm in diameter) has been studied experimentally for large applied fields perpendicular to the layers. An abrupt and hysteretic increase in dynamic resistance is observed at high current densities for one polarity of the current, comparable to the giant magnetoresistance effect observed at low fields. A micromagnetic model, that includes a spin-transfer torque, suggests that the current induces a complete reversal of the thin Co layer to alignment antiparallel to the applied field-that is, to a state of maximum magnetic energy., Comment: 11 pages, 3 figures, (submitted to Phys. Rev. Lett.), added missing figure caption of fig. 3, updated to published version

To understand the near-interface magnetism in manganites, uniform, ultra-thin films of La_{0.67}Sr_{0.33}MnO_3 were grown epitaxially on single crystal (001) LaAlO_3 and (110) NdGaO_3 substrates. The temperature and magnetic field dependent film resistance is used to probe the film's structural and magnetic properties. A surface and/or interface related dead-layer is inferred from the thickness dependent resistance and magnetoresistance. The total thickness of the dead layer is estimated to be $\sim 30 \AA$ for films on NdGaO_3 and $\sim 50 \AA$ for films on LaAlO_3., Comment: 11 pages, 4 figures

Thin film trilayer junction of La$%_{0.67}$Sr$_{0.33}$MnO$_3$ - SrTiO$_3$ - La$_{0.67}$Sr$_{0.33}$MnO$_3$ shows a factor of 9.7 change in resistance, in a magnetic field around 100 Oe at 14K. The junction magnetoresistance is bias and temperature dependent. The energy scales associated with bias and temperature dependence are an order of magnitude apart. The same set of energies also determine the bias and temperature dependence of the differential conductance of the junction. We discuss these results in terms of metallic cluster inclusions at the junction-barrier interface., Comment: 3 pages, 4 figures