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Ground settlement (GS) in an oil tank determines its structural integrity and commercial service. However, GS monitoring faces challenges, particularly due to the significant temperature differences induced by solar radiation around the tank in daytime. To address this problem, this paper digs out a prior and proposes a temperature uncertainty reduction algorithm based on that. This prior has a spatial Gaussian distribution of temperature around the tank, and numerical simulation and practical tests are conducted to demonstrate it. In addition, combining uniformly packaged sensor probes and the spatial prior of temperature, the temperature uncertainty is verified to be Gaussian-distributed too. Then, the overall temperature uncertainty can be captured by Gaussian fitting and then removed. The practical test verified a 91% reduction rate in temperature uncertainty, and this approach enables GS sensors to effectively perform daytime monitoring by mitigating temperature-related uncertainties. [ABSTRACT FROM AUTHOR]

Two-dimensional layered ferroelectric materials, such as CuInP2S6 (CIPS), are promising candidates for novel and high-performance photocatalysts, owing to their ultrathin layer thickness, strong interlayer coupling, and intrinsic spontaneous polarization, while how to control the photocatalytic activity in layered CIPS remains unexplored. In this work, we report for the first time, the photocatalytic activity of ferroelectric CIPS for the chemical deposition of silver nanostructures (AgNSs). The results show that the shape and spatial distribution of AgNSs on CIPS are tunable by controlling layer thickness, environmental temperature, and light wavelength. The ferroelectric polarization in CIPS plays a critical role in tunable AgNS photodeposition, as evidenced by layer thickness and temperature dependence experiments. We further reveal that AgNS photodeposition process starts from active site creation, selective nanoparticle nucleation/aggregation, to continuous film formation. Moreover, AgNS/CIPS heterostructures prepared by photodeposition exhibit excellent resistance switching behavior and good surface enhancement Raman Scattering activity. Our findings provide new insight into the photocatalytic activity of layered ferroelectrics and offer a new material platform for advanced functional device applications in smart memristors and enhanced chemical sensors. [ABSTRACT FROM AUTHOR]

Two-dimensional layered ReX2 (X = Se, S) has attracted researcher's great interest due to its unusual in-plane anisotropic optical and electrical properties and great potential in polarization-sensitive optoelectronic devices, while the clean, energy-saving, and ecological synthesis of highly crystalline ReSe2 with controlled domains remains challenging. Here, we develop a space-confined solid-phase approach for growing high-quality two-domain 1T′-ReSe2 with tunable optoelectronic properties by using pure Re powder as a Re precursor. The results show that ReSe2 can be grown at a temperature as low as 550 °C in a small-tube-assisted space-confined reactor, with its size and shape well-tailored via temperature control. A solid-phase two-domain ReSe2 growth mechanism is proposed, as evidenced by combining in situ optical monitoring, ex situ electron microscope, elemental mapping, and polarized optical imaging. Moreover, two-domain ReSe2 transistors are fabricated, which exhibit a switchable transport behavior between n-type and ambipolar character via grain boundary orientation control. This modulation phenomenon is attributed to the different doping levels between grain boundary and single domain. Furthermore, our two-domain ReSe2 photodetectors exhibit a highly gate-tunable current on–off ratio (with a maximum value of ∼8.2 × 103), a polarization-sensitive photo-response, and a high-speed response time (∼300 μs), exceeding most of the previously reported ReX2 photodetectors. Our work, thus, provides a low-consumption, energy-saving growth strategy toward high-quality, domain-controlled ReX2 for highly tunable and high-performance optoelectronics. [ABSTRACT FROM AUTHOR]

Abstract.We developed a multimodality fluorescence and optical coherence tomography probe based on a double-clad fiber (DCF) combiner. The probe is composed of a DCF combiner, grin lens, and micromotor in the distal end. An integrated swept-source optical coherence tomography and fluorescence intensity imaging system was developed based on the combined probe for the early diagnoses of atherosclerosis. This system is capable of real-time data acquisition and processing as well as image display. For fluorescence imaging, the inflammation of atherosclerosis and necrotic core formed with the annexin V–conjugated Cy5.5 were imaged. Ex vivo imaging of New Zealand white rabbit arteries demonstrated the capability of the combined system.

The electrical properties of transition-metal dichalcogenides (TMDs), such as MoS2, are highly dependent on carrier doping and layer thickness. The ability to selectively control these two critical characteristics is of great importance in order to develop TMD-based multifunctional nanoelectronic device applications, which remains challenging. Here, we report a strategy for controllable surface modification and layer thinning of MoS2 via ultraviolet (UV)-light irradiation in a silver ionic (Ag+) solution environment. The results show that, by adjustment of the UV irradiation time, nanostructured Ag ultrathin films (∼2.9 nm) are uniformly deposited on monolayer MoS2 and can lead to a controllable p-type doping effect, while the thickness of MoS2 from few-layer to thick-layer could be thinned to the atomic monolayer limit. Both Ag nanostructure deposition and layer thinning have been evidenced to initiate from the edges of MoS2, independent of the edge type, thus revealing a unique UV-light-assisted defect-induced surface modification and layer-thinning mechanism. Overall, this study provides a simple methodology for the selective control of doping and layer thickness in TMDs, paving the way for developing multifunctional nanoelectronics and integrated optoelectronics. [ABSTRACT FROM AUTHOR]