84 results on '"Sulmoni, Luca"'
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2. Investigation of degradation dynamics of 265 nm LEDs assisted by EL measurements and numerical simulations
3. Group III-Nitride-Based UV Laser Diodes
4. Defects, performance, and reliability in UVC LEDs
5. Prospects of far-UVC LED technology
6. Modeling of the Electrical Characteristics and Degradation Mechanisms of UV-C LEDs
7. Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs
8. Group III-Nitride-Based UV Laser Diodes
9. Modeling the electrical characteristic and degradation mechanisms of UV-C LEDs
10. The Quest for Ultraviolet Vertical-Cavity Surface-Emitting Lasers
11. Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations
12. Defects, performance, and reliability in UVC LEDs
13. Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy
14. Increased Light Extraction of Thin-Film Flip-Chip UVB LEDs by Surface Texturing
15. Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
16. Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities.
17. The influence of threading dislocations propagating through an AlGaN UVC LED
18. Thin-film UV VCSELs and LEDs by electrochemical etching
19. Development of far-UVC LEDs and their application in irradiation systems for antisepsis and sensing
20. Thin-film flip-chip UVB LEDs realized by electrochemical etching
21. Spectrally pure far-UVC emission from AlGaN-based LEDs with dielectric band pass filters
22. Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs
23. Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs
24. Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm
25. Thin-film flip-chip UVB LEDs enabled by electrochemical etching
26. AlGaN-based deep UV LEDs: applications and challenges
27. Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy
28. The 2020 UV emitter roadmap
29. Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates
30. Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers
31. Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire
32. Continuous-wave operation of DFB laser diodes based on GaN using 10$^{\rm th}$th-order laterally coupled surface gratings
33. Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements.
34. Effect of quantum barrier composition on electro-optical properties of AlGaN-based UVC light emitting diodes
35. Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm
36. MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs
37. Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm
38. The influence of the VCSEL design on its electrical modulation properties
39. 10th order laterally coupled GaN-based DFB laser diodes with V-shaped surface gratings
40. DFB Laser Diodes Based on GaN Using 10th Order Laterally Coupled Surface Gratings
41. AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
42. Effect of the GaN:Mg Contact Layer on the Light-Output and Current-Voltage Characteristic of UVB LEDs
43. Improved light extraction and quantum efficiencies for UVB LEDs with UV-transparent p-AlGaN superlattices (Conference Presentation)
44. Effect of the GaN:Mg Contact Layer on the Light‐Output and Current‐Voltage Characteristic of UVB LEDs.
45. DFB Laser Diodes Based on GaN Using 10th Order Laterally Coupled Surface Gratings.
46. Self-pulsation at zero absorber bias in GaN-based multisection laser diodes
47. The influence of the VCSEL design on its electrical modulation properties
48. Hybrid and Passive Mode-Locking of a Monolithic Two-Section MQW InGaN/GaN Laser Diode
49. Passive mode-locking in the cavity of monolithic GaN-based multi-section laser diodes
50. Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes
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