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The results of polarization-dependent Raman spectroscopy of single-crystalline LiVO$_2$ exhibiting transition to a diamagnetic state below $T_c \sim $500K are reported. Our measurements clearly detect additional peaks in the low-temperature phase, which disappear nearly completely when heated above $T_c$. Proposed $\sqrt{3}$a \times $\sqrt{3}$a lattice reconstruction explains these new Raman peaks by the Brillouin zone folding. The experiment, on the one hand, confirms that the symmetry of the non-magnetic phase is not lower than trigonal, but, on another hand, our thermal cycling study suggests possible stacking faults. This agrees with results of the density functional theory calculations, which show that the energy difference between different types of stacking does not exceed 1 K per formula unit.

We investigated the spin-lattice coupling in orthorhombic pseudobrookite FeTi2O5 single crystal with highly ordered $ Fe^{2+} / Ti^{4+}$ occupation, which consists of quasi-1D S=2 chains running along a-axis. Both the magnetization and specific heat measurements confirm that the antiferromagnetic phase transition of FeTi2O5 occurs at TN = 42 K. The structural distortions were also observed around TN in the thermal expansion $ \Delta L / L (T)$ data. Moreover, the magnetic field was found to strongly affect the thermal expansion both along chains and in the perpendicular direction clearly signaling a substantial magnetoelastic coupling, which was recently proposed to be the origin of a rare spin Jahn-Teller effect, when frustration is lifted via additional lattice distortions. Experimentally observed change in the thermal conductivity slope around TN is usually associated with the orbital ordering, but DFT+U calculations do not detect modification of the orbital structure across the transition. However, the first-principles calculation results confirm that FeTi2O5 is a quasi-1D magnet with a ratio of frustrating inter-chain to intra-chain exchanges $ J' / J = 0 . 0 3$ and a substantial single-ion anisotropy (A = 4K) of easy-axis type making this material interesting for studying quantum criticality in transverse magnetic fields., Comment: 20 pages, 7 figures

Motived by time-reversal symmetry breaking and giant anomalous Hall effect in kagome superconductor \textit{A}V$_3$Sb$_5$ (\textit{A} = Cs, K, Rb), we carried out the thermal transport measurements on CsV$_3$Sb$_5$. In addition to the anomalous Hall effect, the anomalous Nernst effect and the anomalous thermal Hall effect emerge. Interestingly, the longitudinal thermal conductivity $\kappa_{xx}$ largely deviates from the electronic contribution obtained from the longitudinal conductivity $\sigma_{xx}$ by the Wiedemann-Franz law. In contrast, the thermal Hall conductivity $\kappa_{xy}$ is roughly consistent with the Wiedemann-Franz law from electronic contribution. All these results indicate the large phonon contribution in the longitudinal thermal conductivity. Moreover, the thermal Hall conductivity is also slightly greater than the theoretical electronic contribution, indicating other charge neutral contributions. More than that, the Nernst coefficient and Hall resistivity show the multi-band behavior with possible additional contribution from Berry curvature at the low fields.

Great achievements have been made in alloying of two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), which can allow tunable band gaps for practical applications in optoelectronic devices. However, telluride-based TMDs alloys were less studied due to the difficulties of sample synthesis. Here, in this work we report the large-area synthesis of 2D MoTexSe2-x alloy films with controllable Te composition by a modified alkali metal halides assisted chemical vapor deposition method. The as-prepared films have millimeter-scale transverse size. Raman spectra experiments combining calculated Raman spectra and vibrational images obtained by density functional theory (DFT) confirmed the 2H-phase of the MoTexSe2-x alloys. The A1g mode of MoSe2 shows a significant downshift accompanied by asymmetric broadening to lower wavenumber with increasing value of x, while E12g mode seems unchanged, which were well explained by a phonon confinement model. Our work provides a simple method to synthesize large-scale 2H phase Te-based 2D TMDs alloys for their further applications.

Defects play a significant role in optical properties of semiconducting two-dimensional transition metal dichalcogenides (TMDCs). In ultra-thin MoSe2, a remarkable feature at ~250 cm-1 in Raman spectra is ascribed to be a defect-related mode. Recent attempts failed to explain the origin of this peak, leaving it being a mystery. Here in this work, we demonstrate that this peak is a Se vacancy induced defect mode. Heat effect and hydrogen etching are two main factors to introduce Se vacancies in CVD process of growing MoSe2. A phonon confinement model can well explain the behaviors of intrinsic Raman modes. Density functional theory (DFT) calculation reveals that single Se vacancy (VSe) is responsible for the appearance of Raman peak at ~250 cm-1 and this mode is an A1g-like localized mode which is also confirmed by polarized Raman scattering experiment. The relative strength of this mode can be a characterization of the quality of 2D MoSe2. This work may offer a simple method to tailor chalcogenide vacancies in 2D TMDCs and provide a way to study their vibrational properties.

We report the discovery of superconductivity on high-quality single crystals of transition-metal pnictides WP grown by chemical vapor transport (CVT) method. Bulk superconductivity is observed at Tc = 0.84 K under ambient pressure by electrical resistivity and AC magnetic susceptibility measurements. The effects of magnetic field on the superconducting transitions are studied, leading to a large anisotropy parameter around 2 with the in-plane and out-of-plane upper critical fields of Hc2=172 Oe and Hc2\=85 Oe, respectively. Our finding demonstrates that WP is the first superconductor in 5d transition-metal at ambient pressure in MnP-type, which will help to search for new superconductors in transition-metal pnictides., Comment: 15 pages, 5 figures

The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant charged defects is determining a consistent position of the corresponding defect levels, which is difficult to derive using standard supercell calculations. In a complementary approach, we take advantage of the embedded cluster methodology that provides direct access to a common zero of the electrostatic potential for all point defects in all charge states. Charged defects polarise a host dielectric material with long-range forces that strongly affect the outcome of defect simulations; to account for the polarisation we couple embedding with the hybrid quantum mechanical/molecular mechanical (QM/MM) approach and investigate the structure, formation and ionisation energies, and equilibrium concentrations of native point defects in wurtzite GaN at a chemically accurate hybrid-density-functional-theory level. N vacancies are the most thermodynamically favourable native defects in GaN, which contribute to the n-type character of as-grown GaN but are not the main source, a result that is consistent with experiment. Our calculations show no native point defects can form thermodynamically stable acceptor states. GaN can be easily doped n-type, but, in equilibrium conditions at moderate temperatures acceptor dopants will be compensated by N vacancies and no significant hole concentrations will be observed, indicating non-equilibrium processes must dominate in p-type GaN. We identify spectroscopic signatures of native defects in the infrared, visible and ultraviolet luminescence ranges and complementary spectroscopies. Crucially, we calculate the effective-mass-like-state levels associated with electrons and holes bound in diffuse orbitals..., Comment: 19 pages, 10 figures, 5 tables

Oxygen is the most common unintentional impurity found in GaN. We study the interaction between substitutional oxygen (ON) and the gallium vacancy (VGa) to form a point defect complex in GaN. The formation energy of the gallium vacancy is largely reduced in n-type GaN by complexing with oxygen, while thermodynamic and optical transition levels remain within the band gap. We study the spectroscopy of this complex using a hybrid quantum-mechanical molecular-mechanical (QM/MM) embedded-crystal approach. We reveal how a single defect center can be responsible for multiband luminescence, including the ubiquitous yellow luminescence signature observed in n-type GaN, owing to the coexistence of diffuse (extended) and compact (localized) holes., Comment: 16 pages, 4 figures