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The discovery of superconductivity in La3Ni2O7 has attracted significant research interest in the field of nickelate superconductors. Despite extensive studies on pristine La3Ni2O7, the impact of oxygen vacancies (VO), a common type of intrinsic defect in oxides, on electronic structures and superconductivity in La3Ni2O7 remains unclear. In this article, we identify the most energetically favorable location for VO formation as the oxygen atom connecting the NiO6 bilayer, resulting in a significant reduction in the lattice constant along the c-axis. Interestingly, the electronic structure undergoes notable changes, particularly for the Ni dz2 and Ni dx2-y2 orbitals. The Ni dz2 orbitals change from partially filled in the pristine La3Ni2O7 to completely filled in the presence of VO, leading to a considerable decrease of its proportion near the Fermi level. Conversely, the proportion of Ni dx2-y2 states increases due to the orbital localization and slight upward shift. Additionally, we observe a significant increase in the hopping of intra-bilayer Ni dz2 orbitals when the VO exists, but with an opposite sign, which differs greatly from the previous understanding. The inter-orbital hopping between Ni dz2 and Ni dx2-y2 orbitals also changes its sign in the presence of VO. Our results indicate that the formation of VO may be harmful to the superconductivity in La3Ni2O7, given the general assumption for the critical role of Ni dz2 in generating superconductivity. Furthermore, we suggest that Ce3Ni2O7, which shares similar electronic structures to La3Ni2O7 but has a larger lattice volume, may be a better candidate for nickelate superconductor due to its lower VO concentration.

Charge stripes have been widely observed in many different types of unconventional superconductors, holding varying periods ($\mathcal{P}$) and intensities. However, a general understanding on the interplay between charge stripes and superconducting properties is still incomplete. Here, using large-scale unbiased numerical simulations on a general inhomogeneous Hubbard model, we discover that the charge-stripe period $\mathcal{P}$, which is variable in different real material systems, could dictate the pairing symmetries -- $d$ wave for $\mathcal{P} \ge 4$, $s$ and $d$ waves for $\mathcal{P} \le 3$. In the latter, tuning hole doping and charge-stripe amplitude can trigger a $d$-$s$ wave transition and magnetic-correlation shift, where the $d$-wave state converts to a pairing-density wave state, competing with the $s$ wave. These interesting phenomena arise from an unusual stripe-induced selection rule of pairing symmetries around on-stripe region and within inter-stripe region, giving rise to a critical point of $\mathcal{P}=3$ for the phase transition. In general, our findings offer new insights into the differences in the superconducting pairing mechanisms across many $\mathcal{P}$-dependent superconducting systems, highlighting the decisive role of charge stripe., Comment: 5 figures and 8 pages in main text, with a Supplemental Material which include 22 figures. Much more data by DQMC, DMRG and CPQMC are added. Awaiting resubmission

The interplay between superconductivity and charge density waves (CDWs) under hole doping in cuprates is one of the central phenomena in condensed matter physics. Recently, CDWs are also observed in CaCuO$_2$-analogous nickelates RNiO$_2$ (R = La, Nd) but exhibit fundamentally different hole-doping-dependent behaviors compared to that in cuprates, raising a challenging question on its origin. In this article, we propose that electronic instability (EI) and moment-dependent electron-phonon coupling (MEPC), mainly contributed by Ni 3dx2-y2 and R 5dz2, respectively, may be the possible reasons for CDW formation in RNiO$_2$. Without hole doping, a strong Fermi surface nesting (FSN) induced by the unique feature of van Hove singularity (VHS) across Fermi level exists in RNiO$_2$ but not in CaCuO$_2$, and the unusual temperature-insensitive feature of EI and MEPC could result in rather high temperature CDWs in RNiO$_2$. Under hole doping, the reduced FSN of Ni 3dx2-y2 by the shift of VHS and decreased occupation of R 5dz2 largely weaken EI and MEPC in RNiO$_2$, respectively, suppressing the CDW formation. Our theory not only offers possible explanations to some puzzling experimental observations, but also establishes a unified understanding on the hole-doping-dependent EI and MEPC in nickelates and cuprates.

The discovery of superconducting states in the nickelate thin film with infinite-layer structure has paved a new way for studying unconventional superconductivity. So far, research in this field is still very limited due to difficulties in sample preparation. Here we report on the successful preparation of superconducting Nd0.8Sr0.2NiO2 thin film (Tc = 8.0 - 11.1 K) and study the stability of such films in ambient environment, water and under electrochemical conditions. Our work demonstrates that the superconducting state of Nd0.8Sr0.2NiO2 is remarkably stable, which can last for at least 47 days continuous exposure to air at 20 degree Celsius and 35% relative humidity. Further we show the superconductivity disappears after being immersed in de-ionized water at room temperature for 5 hours. Surprisingly, it can also survive under ionic liquid gating conditions with applied voltage up to 4 V, which is even more stable than conventional perovskite complex oxides., Comment: 23 pages, 4 figures

Lorentz-violating type-II Dirac nodal line semimetals (DNLSs), hosting curves of band degeneracy formed by two dispersion branches with the same sign of slope, represent a novel states of matter. While being studied extensively in theory, convincing experimental evidences of type-II DNLSs remain elusive. Recently, Vanadium-based kagome materials have emerged as a fertile ground to study the interplay between lattice symmetry and band topology. In this work, we study the low-energy band structure of double-kagome-layered CsV$_8$Sb$_{12}$ and identify it as a scarce type-II DNLS protected by mirror symmetry. We have observed multiple DNLs consisting of type-II Dirac cones close to or almost at the Fermi level via angle-resolved photoemission spectroscopy (ARPES). First-principle analyses show that spin-orbit coupling only opens a small gap, resulting effectively gapless ARPES spectra, yet generating large spin Berry curvature. These type-II DNLs, together with the interaction between a low-energy van Hove singularity and quasi-1D band as we observed in the same material, suggest CsV$_8$Sb$_{12}$ as an ideal platform for exploring novel transport properties such as chiral anomaly, the Klein tunneling and fractional quantum Hall effect., Comment: 10 pages, 4 figures

Motivated by recent experimental studies on superconductivity found in nickelate-based materials, we study the temperature dependence of the spin correlation and the superconducting pairing interaction within an effective two-band Hubbard model by the quantum Monte Carlo method. Based on parameters extracted from first-principles calculations, our intensive numerical results reveal that the pairing with a $d_{xy}$-wave symmetry firmly dominates over other pairings at low temperature, which is mainly determined by the Ni 3$d$ orbital. It is also found that the effective pairing interaction is enhanced as the on-site interaction increases, demonstrating that the superconductivity is driven by strong electron-electron correlation. Even though the $(\pi,\pi)$ antiferromagnetic correlation could be enhanced by electronic interaction, there is no evidence for long-range antiferromagnetic order exhibited in nickelate-based superconductors. Moreover, our results offer possible evidence that the pure electron correlation may not account for the charge density wave state observed in nickelates., Comment: Published version

The intertwining of charge order, superconductivity and band topology has promoted the AV$_3$Sb$_5$ (A=K, Rb, Cs) family of materials to the center of attention in condensed matter physics. Underlying those mysterious macroscopic properties such as giant anomalous Hall conductivity (AHC) and chiral charge density wave is their nontrivial band topology. While there have been numerous experimental and theoretical works investigating the nontrivial band structure and especially the van Hove singularities, the exact topological phase of this family remains to be clarified. In this work, we identify CsV$_3$Sb$_5$ as a Dirac nodal line semimetal based on the observation of multiple Dirac nodal lines and loops close to the Fermi level. Combining photoemission spectroscopy and density functional theory, we identify two groups of Dirac nodal lines along $k_z$ direction and one group of Dirac nodal loops in the A-H-L plane. These nodal loops are located at the Fermi level within the instrumental resolution limit. Importantly, our first-principle analyses indicate that these nodal loops may be a crucial source of the mysterious giant AHC observed. Our results not only provide a clear picture to categorize the band structure topology of this family of materials, but also suggest the dominant role of topological nodal loops in shaping their transport behavior.

To efficiently integrate cutting-edge terahertz technology into compact devices, the highly confined terahertz plasmons are attracting intensive attentions. Compared to plasmons at visible frequencies in metals, terahertz plasmons, typically in lightly doped semiconductors or graphene, are sensitive to carrier density (n) and thus have an easy tunability, which, however, leads to unstable or imprecise terahertz spectra. By deriving a simplified but universal form of plasmon frequencies, here we reveal a unified mechanism for generating unusual n-independent plasmons (DIPs) in all topological states with different dimensions. Remarkably, we predict that terahertz DIPs can be excited in 2D nodal-line and 1D nodal-point systems, confirmed by the first-principles calculations on almost all existing topological semimetals with diverse lattice symmetries. Besides of n independence, the feature of Fermi-velocity and degeneracy-factor dependences in DIPs can be applied to design topological superlattice and multi-walled carbon nanotube metamaterials for broadband terahertz spectroscopy and quantized terahertz plasmons, respectively. Surprisingly, high spatial confinement and quality factor, also insensitive to n, can be simultaneously achieved in these terahertz DIPs. Our findings pave the way to developing topological plasmonic devices for stable terahertz applications.

Electrides are special ionic solids with excess cavity-trapped electrons serving as anions. Despite the extensive studies on electrides, the interplay between electrides and magnetism is not well understood due to the lack of stable magnetic electrides, particularly the lack of inorganic magnetic electrides. Here, based on the mechanism of Stoner-type magnetic instability, we propose that in certain electrides the low-dimensionality can facilitate the formation of magnetic ground state because of the enhanced density of states near the Fermi level. To be specific, A5B3 (A = Ca, Sr, Ba; B = As, Sb, Bi) (1D), Sr11Mg2Si10 (0D), Ba7Al10 (0D) and Ba4Al5 (0D) have been identified as stable magnetic electrides with spin-polarization energies of tens to hundreds of meV per formula unit. Especially for Ba5As3, the spin-polarization energy can reach up to 220 meV. Furthermore, we demonstrate that the magnetic moment and spin density mainly derive from the interstitial anionic electrons near the Fermi level. Our work paves a way to the searching of stable magnetic electrides and further exploration of the magnetic properties and related applications in electrides.

Plasmon opens up the possibility to efficiently couple light and matter at sub-wavelength scales. In general, the plasmon frequency is dependent of carrier density. This dependency, however, renders fundamentally a weak plasmon intensity at low frequency, especially for Dirac plasmon (DP) widely studied in graphene. Here we demonstrate a new type of DP, excited by a Dirac nodal-surface state, which exhibits an anomalously density-independent frequency. Remarkably, we predict realization of anomalous DP (ADP) in 1D topological electrides, such as Ba3CrN3 and Sr3CrN3, by first-principles calculations. The ADPs in both systems have a density-independent frequency and high intensity, and their frequency can be tuned from terahertz to mid-infrared by changing the excitation direction. Furthermore, the intrinsic weak electron-phonon coupling of anionic electrons in electrides affords an added advantage of ultra-low phonon-assisted damping and hence a long lifetime of the ADPs. Our work paves the way to developing novel plasmonic and optoelectronic devices by combining topological physics with electride materials.

Topological semimetals (TSMs) in which conduction and valence bands cross at zero-dimensional (0D) Dirac nodal points (DNPs) or 1D Dirac nodal lines (DNLs), in 3D momentum space, have recently drawn much attention due to their exotic electronic properties. Here we generalize the TSM state further to a higher-symmetry and higher-dimensional pseudo Dirac nodal sphere (PDNS) state, with the band crossings forming a 2D closed sphere at the Fermi level. The PDNS state is characterized with a spherical backbone consisting of multiple crossing DNLs while band degeneracy in between the DNLs is approximately maintained by weak interactions. It exhibits some unique electronic properties and low-energy excitations, such as collective plasmons different from DNPs and DNLs. Based on crystalline symmetries, we theoretically demonstrate two possible types of PDNS states, and identify all the possible band crossings with pairs of 1D irreducible representations to form the PDNS states in 32 point groups. Importantly, we discover that strained MH3 (M= Y, Ho, Tb, Nd) and Si3N2 are materials candidates to realize these two types of PDNS states, respectively. As a high-symmetry-required state, the PDNS semimetal can be regarded as the "parent phase" for other topological gapped and gapless states., Comment: 10 pages, 3 figures, 1 table

A key challenge in manipulating the magnetization in heavy-metal/ferromagnetic bilayers via the spin-orbit torque is to identify materials that exhibit an efficient charge-to-spin current conversion. Ab initio electronic structure calculations reveal that the intrinsic spin Hall conductivity (SHC) for pristine $\beta$-W is about sixty percent larger than that of $\alpha$-W. More importantly, we demonstrate that the SHC of $\beta$-W can be enhanced via Ta alloying. This is corroborated by spin Berry curvature calculations of W$_{1-x}$Ta$_x$ ($x$ $\sim$ 12.5%) alloys which show a giant enhancement of spin Hall angle of up to $\approx$ $-0.5$. The underlying mechanism is the synergistic behavior of the SHC and longitudinal conductivity with Fermi level position. These findings, not only pave the way for enhancing the intrinsic spin Hall effect in $\beta$-W, but also provide new guidelines to exploit substitutional alloying to tailor the spin Hall effect in various materials.

Triply degenerate points (TDPs) in band structure of a crystal can generate novel TDP fermions without high-energy counterparts. Although identifying ideal TDP semimetals, which host clean TDP fermions around the Fermi level ($E_F$) without coexisting of other quasiparticles, is critical to explore the intrinsic properties of this new fermion, it is still a big challenge and has not been achieved up to now. Here, we disclose an effective approach to search for ideal TDP semimetals via selective band crossing between antibonding $s$ and bonding $p$ orbitals along a line in the momentum space with $C_{3v}$ symmetry. Applying this approach, we have successfully identified the NaCu$_3$Te$_2$ family of compounds to be ideal TDP semimetals, where two and only two pairs of TDPs are located around the $E_F$. Moreover, we reveal an interesting mechanism to modulate energy splitting between a pair of TDPs, and illustrate the intrinsic features of TDP Fermi arcs in these ideal TDP semimetals., Comment: 9 pages, 4 figures

Materials with large magnetocrystalline anisotropy and strong electric field effects are highly needed to develop new types of memory devices based on electric field control of spin orientations. Instead of using modified transition metal films, we propose that certain monolayer transition metal dichalcogenides are the ideal candidate materials for this purpose. Using density functional calculations, we show that they exhibit not only a large magnetocrystalline anisotropy (MCA), but also colossal voltage modulation under external field. Notably, in some materials like CrSe_2 and FeSe_2, where spins show a strong preference for in-plane orientation, they can be switched to out-of-plane direction. This effect is attributed to the large band character alteration that the transition metal d-states undergo around the Fermi energy due to the electric field. We further demonstrate that strain can also greatly change MCA, and can help to improve the modulation efficiency while combined with an electric field.