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The method of embedded cold-pressing joining could achieve the joining of sheets with different thickness and the joining of dissimilar sheets. Besides, it could meet the lightweight request easily. This article expounded the joining mechanism of this method deeply. To expound the joining mechanism of this method, this article has taken aluminum and stainless steel as examples. In addition, numerical stimulation studies of different hole types’ connecting processes had shown that it was easier to reach plastic yield conditions for aluminum and deform it under the same load conditions. The deformation achieved was significantly greater than that for stainless steel. The width increment of the joining parts increased with the increase of the load pressures; however, the thickness changes of the joining parts behaved in an opposite manner. When the pressing volume of the punch reached 2.4 mm, with the width increment of aluminum sheets of the square hole reaching 2.78 mm, which was the maximum width increment, followed by the hexagonal hole, and the round hole being a minimum. Hole type had a small influence on the width of stainless steel sheets. The experimental results of different hole type joining process indicated that compared with round hole and hexagonal hole, the filling of the square hole was relatively difficult. In case of unreasonable process schemes, defects such as “fake joining,” “offset loading” and “hole deformation” would occur. Thus, this article provided a theoretical basis for the scheme establishment and quality control of the embedded cold-pressing joining process. [ABSTRACT FROM PUBLISHER]

Density functional theory (DFT) and ab initio molecular dynamics (AIMD) calculations are combined to study the α-Ti oxidation mechanism on atomic scale. The most and second stable adsorption site for O atoms on the surface layer is FCC and HCP site, respectively. The most stable adsorption site of subsurface layer is octahedral site. O atoms all gain electrons from adsorbed Ti atoms and the Ti–O bonds are mainly formed by the hybridization between O-p and Ti-d orbitals. At both 303 K and 873 K, AIMD results show that O 2 molecule gradually dissociate into O atoms on α-Ti (0001) surface and then adsorb on the surface. The increase of temperature accelerates the dissociation rate of O 2 molecule. During the formation of Ti–O bond, O and Ti atom gain and lose electrons, respectively. The partial density of states evolution results show that the Ti–O bond is formed by the gradually strengthened hybridization between O-p and Ti-d orbitals. At 303 K, α-Ti (0001) surface can form a dense oxide film. But a discontinuous and loose oxide film is formed at 873 K and O atoms can penetrate into the octahedral and tetrahedral sites of the subsurface layer. • DFT and AIMD were combined to reveal the α-Ti oxidation mechanism. • Adsorption behavior of O atom on surface and subsurface was studied by DFT. • The dynamic dissociation and adsorption process of O 2 was investigated by AIMD. • The temperature effect on the O 2 dissociation behavior was studied by AIMD. • Electronic structure during DFT and AIMD calculation were investigated. [ABSTRACT FROM AUTHOR]