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118 results on '"Suh, K. Y."'

3. Controlled polymer dewetting by physical confinement.

Author

Suh, K. Y., Park, Joonhyung, and Lee, Hong H.

Subjects
*POLYMERS, *PHOTOLITHOGRAPHY
Abstract

We report ordering of polymer drops that takes place when a thin polystyrene film confined by polydimethylsiloxane walls dewets on a silicon substrate. When annealed above the glass transition temperature, the thin polymer film dewets, resulting in the formation of a regular structure inside and outside the confinement. It is found that the ordering becomes strongly suppressed as the film thickness increases and the pattern size decreases due to the physical confinement of the mold. As a result, the ordering can take place only when the wavelength of the capillary wave is smaller than the characteristic length of the physical confinement. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2002
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4. Aging behavior of porous silicon electrochemically etched with the aid of Zn.

Author

Suh, K. Y., Kim, Y. S., and Lee, Hong H.

Subjects
*POROUS silicon, *PHOTOLUMINESCENCE, *ZINC, *DECAY schemes (Radioactivity)
Abstract

Aging behavior of red, green, and blue photoluminescence from porous silicon formed by electrochemical etching aided with zinc has been studied over a 3 month time span. Time-resolved photoluminescence spectra and decay dynamics have revealed that there are two radiating states in Zn-aided porous silicon. One is the quantum confinement and the other is the oxygen-related defect. For green emission, the wavelength shifts from 520 to 420 nm and its photoluminescence spectra and decay behavior become very similar to those of blue emission. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2001
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5. Anistropic hole formation in thin polymer films confined by walls.

Author

Suh, K. Y. and Lee, Hong H.

Subjects
*POLYMERS, *ANISOTROPY
Abstract

We report dewetting behavior of thermally annealed thin polymer strips of poly (styrene-b-butadiene-b-styrene) and polystyrene films that are laterally confined by polydimethylsiloxane walls on silicon substrate. Regularly spaced holes are initially nucleated on the polymer surface and then grow with the aid of the confining walls, resulting in the formation of distinctly observable, regularly spaced blocks of the strip. It is observed that the dependence of hole density on the film thickness severely deviates from the conventional capillary wave model. This anomaly may be related to the viscoleastic properties of the polymer film. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2001
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6. Composition dependence of activation energy in solid phase epitaxial growth of Si1-xGex alloys.

Author

Suh, K. Y. and Lee, Hong H.

Subjects
*EPITAXY, *CRYSTAL growth, *ALLOYS, *CRYSTALLIZATION
Abstract

Presents a study which developed a theoretical model for the composition dependence of the activation energy in solid phase epitaxial growth of Si[sub1-x]Ge[subx] alloys. Description of the proposed models for the solid phase epitaxy mechanism (SPE); Requirements for the recrystallization in SPE; Comparison between the regrowth rate of stressed and stress-relaxed alloys.

Published
1996
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8. Point-of-care lithium monitoring in whole blood using a disposable, prefilled and ready-to-use capillary electrophoresis microchip

Author

Kohlheyer, D., Eijkel, Jan C.T., Lenk, Stefan, Floris, Arjan, Staal, Steven, van den Berg, Albert, Kim, T.S., Lee, Y-S, Chung, T-D, Jeon, N.L., Lee, S.H., Suh, K-Y, Choo, J., and Kim, Y-K

Abstract

This paper describes a microfluidic capillary electrophoresis device with integrated conductivity detection. The device satisfies all major requirements for pointof- care testing, i.e., simple handling, low sample volume, fast measurements, clear readout, and inexpensive disposable cartridge usage. The system is currently being utilized and commercialized for monitoring lithium in whole blood, however, can potentially be applied to various other ions present in blood, urine or other bodily fluids. The chip contains a single inlet only and will be shipped prefilled with background electrolyte, sealed and blistered; ready for use at the patient’s place. A single droplet of blood is required to be placed inside the cartridge to perform the analysis typically within a couple of minutes.

Published
2009

9. DNA transport in 20nm nanoslits by AC and DC electrical fields

Author

Beugelaar, G.B., Castillo-Fernandez, O., Castillo, O., Arundell, M., Samitier, J., van den Berg, Albert, Eijkel, Jan C.T., Kim, T.S., Lee, Y-S, Chung, T-D, Jeon, N.L., Lee, S.H., Suh, K-Y, Choo, J., Kim, Y-K, and Faculty of Science and Technology

Subjects
METIS-268930, IR-69427, EWI-17150
Abstract

We investigated the transport of λ-DNA in 20 nm nanoslits under the influence of applied AC and DC fields. At DC fields below 15 kV/m it was found that the addition of 1 kHz AC fields with maximum strengths between 10 and 200 kV/m significantly increased the mobility. At DC fields above 15 kV/m no influence of the AC fields was observed. The observed behavior indicates that steric effects rather than dielectrophoretic effects are responsible for the observed low DNA mobility in 20 nm nanoslits. The observed mobility behaviour can be explained if the DNA moves by biased reptation in the nanoslits

Published
2009

12. Compensation effect in the rate of solid-phase epitaxial growth of Si[sub 1-x]Ge[sub x] alloys.

Author

Suh, K. Y. and Lee, Hong H.

Subjects
*EPITAXY, *SILICON alloys
Abstract

The compensation effect, well known in catalytic reactions, is shown to apply equally well to the solid-phase epitaxial (SPE) growth of Si[sub 1-x]Ge[sub x] alloys. A linear relationship exists between the logarithm of the pre-exponential factor and the activation energy of the SPE growth rate. This linear relationship, together with the activation energy obtained earlier, enables one to completely describe the growth rate of Si[sub 1-x]Ge[sub x] alloys. The effect holds for both strained and unstrained SPE. The model is applicable to other binary alloys. © 1997 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
1997
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