916 results on '"Suga, Tadatomo"'
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2. From surface activation to microfluidic heat pipes: An innovative in-situ wafer level heterogenous bonding method
3. Wafer-level InP-Si covalent bonding and defect-free heterointerface for photonic quantum systems
4. A Novel Strategy for GaN-on-Diamond Device with a High Thermal Boundary Conductance
5. Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology
6. Low-temperature Cu/SiO2 hybrid bonding based on Ar/H2 plasma and citric acid cooperative activation for multi-functional chip integration
7. Thermal Visualization of Buried Interfaces by Transient and Steady-State Responses of Time-Domain Thermoreflectance
8. Wafer-scale Heterogeneous Integration of Monocrystalline \b{eta}-Ga2O3 Thin Films on SiC for Thermal Management by Ion-Cutting Technique
9. Interfacial Thermal Conductance across Room-Temperature Bonded GaN-Diamond Interfaces for GaN-on-Diamond Devices
10. High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces
11. Strain effect in highly-doped n-type 3C-SiC-on-glass substrate for mechanical sensors and mobility enhancement
12. A novel strategy for GaN-on-diamond device with a high thermal boundary conductance
13. Microfluidic chip connected to porous microneedle array for continuous ISF sampling
14. Low-temperature bonding of surface-activated polyimide to Cu Foil in Pt-catalyzed formic acid atmosphere
15. Direct Cu to Cu Bonding and Alternative Bonding Techniques in 3D Packaging
16. Hydrophilic nanoporous copper surface prepared by modified formic acid vapor treatment
17. Fabrication of Ag@Ag2O-MnOx composite nanowires for high-efficient room-temperature removal of formaldehyde
18. Thermal Transport Properties of β-Ga2O3 Thin Films on Si and SiC Substrates Fabricated by an Ion-Cutting Process
19. Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC
20. Exploration of the enhanced performances for silk fibroin/sodium alginate composite coatings on biodegradable Mg−Zn−Ca alloy
21. Silicate glass-to-glass hermetic bonding for encapsulation of next-generation optoelectronics: A review
22. InP/LiNbO3Covalent Heterointerface Construction via an Asymmetric Plasma Activation Strategy for Hybrid Integrated Quantum Systems
23. Elucidating the formation mechanisms of the parasitic channel with buffer-free GaN/Si hetero-bonding structures.
24. Circular Economy in Business Strategy of Manufacturing Company
25. Enhanced adhesion and anticorrosion of silk fibroin coated biodegradable Mg-Zn-Ca alloy via a two-step plasma activation
26. Direct bonding of high dielectric oxides for high-performance transistor applications
27. Polishing of CVD Diamond for Direct Bonding Using Ar and SF6-Gas Cluster Ion Beams
28. Conversion of Perhydropolysilazane into SiO2 using Plasma Treatment for Wafer Bonding
29. Evidence for intermolecular forces involved in ladybird beetle tarsal setae adhesion
30. Rapid pressureless and low-temperature bonding of large-area power chips by sintering two-step activated Ag paste
31. De-bondable SiC[sbnd]SiC wafer bonding via an intermediate Ni nano-film
32. Direct Cu to Cu Bonding and Alternative Bonding Techniques in 3D Packaging
33. Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices
34. Low temperature de-oxidation for copper surface by catalyzed formic acid vapor
35. (Invited) Modified SAB Methods for Hybrid and All-Cu Bonding for 3D Integration below 200ºC
36. Hydrophilic Bonding of SiO2/SiO2 and Cu/Cu using Sequential Plasma Activation
37. Emerging wafer bonding technologies
38. List of contributors
39. Direct Cu to Cu Bonding and Other Alternative Bonding Techniques in 3D Packaging
40. Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices
41. Cu-Cu Thermocompression Bonding with a Self-Assembled Monolayer as Oxidation Protection for 3D/2.5D System Integration
42. Compensation of the Warpage of CVD Diamond Wafers using Intermediate Layers for Surface Activated Bonding
43. Protection of Activated Au Surface using Self-assembled Monolayer for Room Temperature Bonding
44. GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off
45. Combined surface activated bonding using H-containing HCOOH vapor treatment for Cu/Adhesive hybrid bonding at below 200 °C
46. β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process
47. Room temperature bonding of Au assisted by self-assembled monolayer
48. Surface activated bonding of ALD Al2O3 films
49. Fast atom bombardment onto vertically aligned multi-walled carbon nanotube bumps to achieve low interconnect resistance with Au layer
50. ReS2 on GaN Photodetector Using H+ Ion-Cut Technology
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