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In the early studies, thorough calculations for the band structures of binary and ternary semiconductor compounds have been performed. But in those studies the role of substrate, on which the studied compound is grown, has not been accounted. In this paper, the calculations for the band structures of technologically important binary semiconductors i.e. GaAs and InAs considering the effect of substrate have been performed and the results have been analysed successfully. In results, it has been shown that considering the lattice matched substrate with the grown semiconductor layers is very important for better device performance. [ABSTRACT FROM AUTHOR]