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The efficiency of usual AlGaN based deep ultraviolet light-emitting devices is still quite low. The difficulties are basically originated from the fundamental material properties of AlGaN. This work has adopted monolayer-scale (AlN)m/(GaN)n ordered digital alloys (DAs) as alternatives to AlGaN random alloys, m and n are the numbers of monolayers. X-ray diffraction scans have demonstrated clear satellite peaks, verifying good periodicity of AlN/GaN DAs grown by molecular beam epitaxy (MBE), and transmission electron microscopy results have revealed atomically sharp and smooth interfaces and quite precise m:n values agreeing well with designs. The electron densities of Si-doped (AlN)m/(GaN)n DAs with high equivalent Al compositions are significantly higher than those of conventional AlGaN:Si random alloys grown in the same MBE system. Si dopant ionization energies in DAs are only 2–5 meV, much lower than that for usual random alloys. The red shift of the light emission for DAs with thinner AlN barriers has suggested strong coupling between the GaN wells and thus formation of a miniband in a vertical direction. The results have demonstrated the potential of the (AlN)m/(GaN)n DAs as electronically functional alternatives for various device applications. [ABSTRACT FROM AUTHOR]

Wind Turbine Gearbox is an important part of the wind turbine,in the long-term operation will inevitably occur various types of faults,its inspection and maintenance methods will become the focus of scholars. By analyzing the research status of condition monitoring methods and means,fault feature extraction methods and maintenance strategies for wind turbine gearbox,the main problems in the research of inspection and maintenance methods are summarized. Some suggestions are put forward,such as the research of on-line monitoring method and means of wind turbine gearbox based on multi-sensor,the research of intelligent fault diagnosis method of wind turbine gearbox based on multi-source information fusion,the research of preventive maintenance strategy of wind turbine gearbox based on life distribution and real-time monitoring data,etc. It can be used for reference for the research of wind turbine gearbox inspection and maintenance method.

Trench defects, resulting in low emission efficiency in green and longer spectrum ranges, are widely observed in III-nitride alloy multiple quantum wells (MQWs), particularly in those with high indium content. There is a lack of understanding of the atomic formation mechanism of trench defects; however, it is crucial to the efficiency of devices. Here, we provided a thermodynamic analysis through first-principles calculations based on the density functional theory combined with experimental confirmation to reveal the atomic formation mechanism of trench defects in the InGaN MQWs system. The In-rich region is easy to form and induces basal plane stacking faults (BSFs) at the interface between the InGaN quantum well and the GaN quantum barrier (QB). The boundary between BSF and non-BSF regions exhibits a much slower growth rate due to the formation of homoelementary bonds, resulting in a V-shaped groove shape. Based on high-angle annular dark field scanning transmission electron microscopy, we observe the trench defects originating from the thick GaN QB layer due to the formation of closed-loop V-shaped grooves and the BSF. Besides, the cathodoluminescence measurements show that the InGaN QW within the defect has excess indium and poor crystal quality. [ABSTRACT FROM AUTHOR]

Path planning for an unmanned vehicle in an off-road uncertain environment is important for navigation safety and efficiency. Regarding this, a global improved A* algorithm is presented. Firstly, based on remote sensing images, the artificial potential field method is used to describe the distribution of risk in the uncertain environment, and all types of ground conditions are converted into travel time costs. Additionally, the improvements of the A* algorithm include a multi-directional node search algorithm, and a new line-of-sight algorithm is designed which can search sub-nodes more accurately, while the risk factor and the passing-time cost factor are added to the cost function. Finally, three kinds of paths can be calculated, including the shortest path, the path of less risk, and the path of less time-cost. The results of the simulation show that the improved A* algorithm is suitable for the path planning of unmanned vehicles in a complex and uncertain environment. The effectiveness of the algorithm is verified by the comparison between the simulation and the actual condition verification. [ABSTRACT FROM AUTHOR]

The precision of the kernel independent component analysis (KICA) algorithm depends on the type and parameter values of kernel function. Therefore, it's of great significance to study the choice method of KICA's kernel parameters for improving its feature dimension reduction result. In this paper, a fitness function was established by use of the ideal of Fisher discrimination function firstly. Then the global optimal solution of fitness function was searched by particle swarm optimization (PSO) algorithm and a multi-state information dimension reduction algorithm based on PSO-KICA was established. Finally, the validity of this algorithm to enhance the precision of feature dimension reduction has been proven. [ABSTRACT FROM AUTHOR]

As the diminution of micro-LED pixels advances, the pivotal role of dislocation phenomena becomes increasingly pronounced. This study provides insight into the key characteristics and dominant mechanisms of GaN-based micro-LEDs by comparing the homoepitaxial and heteroepitaxial configurations. Our findings reveal that variability in V-shaped pits distribution markedly influences the performance and uniformity of micro-LED chips. While the homoepitaxial micro-LEDs, alongside significantly reduced dislocation density and residual stress, effectively preclude the formation of them and thus ensuring superior uniformity both within and among micro-LED chips. Notably, the external quantum efficiency (EQE) peak of homoepitaxial micro-LEDs surpasses that of heteroepitaxial variants by 40%. Motivated by the realization that the reduced MQW thickness at the sidewalls of V-shaped pit aids carrier injection, a great enhancement in EQE from 7.9% to 14.8% (@ 10 A/cm 2 ) was achieved by the optimization of homoepitaxial structure. Therefore, the growth of micro-LED with lower dislocation density, lower residual stress, and epi-structure of low-energy-barrier MQWs demonstrated the profound impact on advancing micro-LED technology to obtain the performance of high uniformity, high brightness, and low power consumption.