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The emerging hybrid integrated quantum photonics combines advantages of different functional components into a single chip to meet the stringent requirements for quantum information processing. Despite the tremendous progress in hybrid integrations of III-V quantum emitters with silicon-based photonic circuits and superconducting single-photon detectors, on-chip optical excitations of quantum emitters via miniaturized lasers towards single-photon sources (SPSs) with low power consumptions, small device footprints and excellent coherence properties is highly desirable yet illusive. In this work, we present realizations of bright semiconductor singe-photon sources heterogeneously integrated with on-chip electrically-injected microlasers. Different from previous one-by-one transfer printing technique implemented in hybrid quantum dot (QD) photonic devices, multiple deterministically coupled QD-circular Bragg Grating (CBG) SPSs were integrated with electrically-injected micropillar lasers at one time via a potentially scalable transfer printing process assisted by the wide-field photoluminescence (PL) imaging technique. Optically pumped by electrically-injected microlasers, pure single photons are generated with a high-brightness of a count rate of 3.8 M/s and an extraction efficiency of 25.44%. Such a high-brightness is due to the enhancement by the cavity mode of the CBG, which is confirmed by a Purcell factor of 2.5. Our work provides a powerful tool for advancing hybrid integrated quantum photonics in general and boosts the developments for realizing highly-compact, energy-efficient and coherent SPSs in particular.

The generation of high-quality entangled photon pairs has been being a long-sought goal in modern quantum communication and computation. To date, the most widely-used entangled photon pairs are generated from spontaneous parametric downconversion, a process that is intrinsically probabilistic and thus relegated to a regime of low pair-generation rates. In contrast, semiconductor quantum dots can generate triggered entangled photon pairs via a cascaded radiative decay process, and do not suffer from any fundamental trade-off between source brightness and multi-pair generation. However, a source featuring simultaneously high photon-extraction efficiency, high-degree of entanglement fidelity and photon indistinguishability has not yet been reported. Here, we present an entangled photon pair source with high brightness and indistinguishability by deterministically embedding GaAs quantum dots in broadband photonic nanostructures that enable Purcell-enhanced emission. Our source produces entangled photon pairs with a record pair collection probability of up to 0.65(4) (single-photon extraction efficiency of 0.85(3)), entanglement fidelity of 0.88(2), and indistinguishabilities of 0.901(3) and 0.903(3), which immediately creates opportunities for advancing quantum photonic technologies., Comment: Submitted to Nature Nanotechnology on 9th March 2018 and accepted for publication on 1st March 2019. The formal acceptance of the manuscript was delayed because of the unfounded message (from a self-declared reviewer without a full/authorized access to the manuscript) addressed to the editorial board of the recipient journal after the completion of the peer review process

Two-dimensional transition-metal dichalcogenides (TMDC) are of great interest for on-chip nanophotonics due to their unique optoelectronic properties. Here, we propose and realize coupling of tungsten diselenide (WSe2) monolayers to circular Bragg grating structures to achieve enhanced emission. The interaction between WSe2 and the resonant mode of the structure results in Purcell-enhanced emission, while the symmetric geometrical structure improves the directionality of the out-coupling stream of emitted photons. Furthermore, this hybrid structure produces a record high contrast of the spin valley readout (> 40%) revealed by the polarization resolved photoluminescence (PL) measurements. Our results are promising for on-chip integration of TMDC monolayers with optical resonators for nanophotonic circuits.

Dielectric metasurfaces require high refractive index contrast materials for optimum performance. This requirement imposes a severe restraint; devices have either been demonstrated at wavelengths of 700nm and above using high-index semiconductors such as silicon, or they use lower index dielectric materials such as TiO$_{2}$ or Si$_{3}$N$_{4}$ and operate in the visible wavelength regime. Here, we show that the high refractive index of silicon can be exploited at wavelengths as short as 532 nm by demonstrating a silicon metasurface with a transmission efficiency of 47% at this wavelength. The metasurface consists of a graded array of silicon posts arranged in a square lattice on a quartz substrate. We show full 2{\pi} phase control and we experimentally demonstrate polarization-independent beam deflection at 532nm wavelength. The crystalline silicon is placed on a quartz substrate by a bespoke layer transfer technique and we note that an efficiency >70% may be achieved for a further optimized structure in the same material. Our results open a new way for realizing efficient metasurfaces based on silicon in the visible wavelength regime., Comment: 16 pages, 6 figures, 2 tables