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194 results on '"Su, C.-J."'

1. Demonstrating a Long-Coherence Dual-Rail Erasure Qubit Using Tunable Transmons

Author

Levine, H., primary, Haim, A., additional, Hung, J. S. C., additional, Alidoust, N., additional, Kalaee, M., additional, DeLorenzo, L., additional, Wollack, E. A., additional, Arrangoiz-Arriola, P., additional, Khalajhedayati, A., additional, Sanil, R., additional, Moradinejad, H., additional, Vaknin, Y., additional, Kubica, A., additional, Hover, D., additional, Aghaeimeibodi, S., additional, Alcid, J. A., additional, Baek, C., additional, Barnett, J., additional, Bawdekar, K., additional, Bienias, P., additional, Carson, H. A., additional, Chen, C., additional, Chen, L., additional, Chinkezian, H., additional, Chisholm, E. M., additional, Clifford, A., additional, Cosmic, R., additional, Crisosto, N., additional, Dalzell, A. M., additional, Davis, E., additional, D’Ewart, J. M., additional, Diez, S., additional, D’Souza, N., additional, Dumitrescu, P. T., additional, Elkhouly, E., additional, Fang, M. T., additional, Fang, Y., additional, Flammia, S., additional, Fling, M. J., additional, Garcia, G., additional, Gharzai, M. K., additional, Gorshkov, A. V., additional, Gray, M. J., additional, Grimberg, S., additional, Grimsmo, A. L., additional, Hann, C. T., additional, He, Y., additional, Heidel, S., additional, Howell, S., additional, Hunt, M., additional, Iverson, J., additional, Jarrige, I., additional, Jiang, L., additional, Jones, W. M., additional, Karabalin, R., additional, Karalekas, P. J., additional, Keller, A. J., additional, Lasi, D., additional, Lee, M., additional, Ly, V., additional, MacCabe, G., additional, Mahuli, N., additional, Marcaud, G., additional, Matheny, M. H., additional, McArdle, S., additional, McCabe, G., additional, Merton, G., additional, Miles, C., additional, Milsted, A., additional, Mishra, A., additional, Moncelsi, L., additional, Naghiloo, M., additional, Noh, K., additional, Oblepias, E., additional, Ortuno, G., additional, Owens, J. C., additional, Pagdilao, J., additional, Panduro, A., additional, Paquette, J.-P., additional, Patel, R. N., additional, Peairs, G., additional, Perello, D. J., additional, Peterson, E. C., additional, Ponte, S., additional, Putterman, H., additional, Refael, G., additional, Reinhold, P., additional, Resnick, R., additional, Reyna, O. A., additional, Rodriguez, R., additional, Rose, J., additional, Rubin, A. H., additional, Runyan, M., additional, Ryan, C. A., additional, Sahmoud, A., additional, Scaffidi, T., additional, Shah, B., additional, Siavoshi, S., additional, Sivarajah, P., additional, Skogland, T., additional, Su, C.-J., additional, Swenson, L. J., additional, Sylvia, J., additional, Teo, S. M., additional, Tomada, A., additional, Torlai, G., additional, Wistrom, M., additional, Zhang, K., additional, Zuk, I., additional, Clerk, A. A., additional, Brandão, F. G. S. L., additional, Retzker, A., additional, and Painter, O., additional

Published
2024
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4. Transport properties of spiral carbon nanofiber mats containing Pd metal clusters using Pd2(dba)3 as catalyst

Author

Liu, C. -J., Wu, T. -W., Hsu, L. -S., Su, C. -J., Wang, C. -C., and Shieu, F. -S.

Subjects
Condensed Matter - Disordered Systems and Neural Networks
Abstract

We have grown spiral carbon nanofibers containing Pd metal clusters using the Pd2(dba)3 catalyzed decomposition of gaseous acetylene on molecular sieves (AlPO4-5) support. The microstructure and composition of the spiral carbon nanofibers were examined by the powder x-ray diffractometer and transmission electron microscope. The conductivity of the mat in the temperature range from 14 to 250 K could be described by the form of exp[-(T-1/4)]. The thermopower shows a remarkably linear behavior down to 40 K, reminiscent of some conducting polymers. The sign change of the thermopower suggests there exists more than one type of charge carrier, which could be ascribed to the different types of nanotube with various sizes of radius. The transport behavior of spiral carbon nanofibers containing Pd metal clusters will be discussed in the framework of the heterogeneous model., Comment: 22 pages, 7 figures

Published
2004

6. First Demonstration of Heterogeneous L-shaped Field Effect Transistor (LFET) for Angstrom Technology Nodes

Author

Yang, C.-Y., primary, Sung, P.-J., additional, Chuang, M.-H., additional, Chang, C.-W., additional, Shih, Y.-J., additional, Huang, T.-Y., additional, Lu, D. D., additional, Hong, T.-C., additional, Yu, X.-R., additional, Lu, W.-H., additional, Chang, S.-W., additional, Tsai, J.-J., additional, Huang, M.-K., additional, Cho, T.-C., additional, Lee, Y.-J., additional, Luo, K.-L., additional, Wu, C.-T., additional, Su, C.-J., additional, Kao, K.-H., additional, Chao, T.-S., additional, Wu, W.-F., additional, and Wang, Y.-H., additional

Published
2022
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7. Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size

Author

Yu, X.-R., primary, Chuang, M.-H., additional, Chang, S.-W., additional, Chang, W.-H., additional, Hong, T.-C., additional, Chiang, C.-H., additional, Lu, W.-H., additional, Yang, C.-Y., additional, Chen, W.-J., additional, Lin, J.-H., additional, Wu, P.-H., additional, Sun, T.-C., additional, Kola, S., additional, Yang, Y.-S., additional, Da, Yun, additional, Sung, P.-J., additional, Wu, C.-T., additional, Cho, T.-C., additional, Luo, G.-L., additional, Kao, K.-H., additional, Chiang, M.-H., additional, Ma, W. C.-Y., additional, Su, C.-J., additional, Chao, T.-S., additional, Maeda, T., additional, Samukawa, S., additional, Li, Y., additional, Lee, Y.-J., additional, Wu, W.-F., additional, Tarng, J.-H., additional, and Wang, Y.-H., additional

Published
2022
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10. First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering

Author

Yu, X.-R., primary, Chang, W.-H, additional, Hong, T.-C., additional, Sung, P.-J., additional, Agarwal, A., additional, Luo, G.-L., additional, Wu, C.-T., additional, Kao, K.-H., additional, Su, C.-J., additional, Chang, S.-W., additional, Lu, W.-H., additional, Fu, P.-Y., additional, Lin, J.-H., additional, Wu, P.-H., additional, Cho, T.-C., additional, Ma, W. C.-Yu., additional, Lu, D.-D., additional, Chao, T.-S., additional, Maeda, T., additional, Lee, Y.-J., additional, Wu, W.-F., additional, Yeh, W.-K., additional, and Wang, Y.-H., additional

Published
2022
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12. Performance of the new biological small- and wide-angle X-ray scattering beamline 13A at the Taiwan Photon Source

Author

Shih, O., primary, Liao, K.-F., additional, Yeh, Y.-Q., additional, Su, C.-J., additional, Wang, C.-A., additional, Chang, J.-W., additional, Wu, W.-R., additional, Liang, C.-C., additional, Lin, C.-Y., additional, Lee, T.-H., additional, Chang, C.-H., additional, Chiang, L.-C., additional, Chang, C.-F., additional, Liu, D.-G., additional, Lee, M.-H., additional, Liu, C.-Y., additional, Hsu, T.-W., additional, Mansel, B., additional, Ho, M.-C., additional, Shu, C.-Y., additional, Lee, F., additional, Yen, E., additional, Lin, T.-C., additional, and Jeng, U., additional

Published
2022
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15. First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF Applications

Author

Chang, S.-W., primary, Lu, T.-H., additional, Yang, C.-Y., additional, Yeh, C.-J., additional, Huang, M.-K., additional, Meng, C.-F., additional, Chen, P.-J., additional, Chang, T.-H., additional, Chang, Y.-S., additional, Jhu, J.-W., additional, Hong, T.-Z., additional, Ke, C.-C., additional, Yu, X.-R., additional, Lu, W.-H., additional, Baig, M. A., additional, Cho, T.-C., additional, Sung, P.-J., additional, Su, C.-J., additional, Hsueh, F.-K., additional, Chen, B.-Y., additional, Hu, H.-H., additional, Wu, C.-T., additional, Lin, K.-L., additional, Ma, W. C.-Y., additional, Lu, D.-D., additional, Kao, K.-H., additional, Lee, Y.-J., additional, Lin, C.-L., additional, Huang, K.-P., additional, Chen, K.-M., additional, Li, Y., additional, Samukawa, S., additional, Chao, T.-S., additional, Huang, G.-W., additional, Wu, W.-F., additional, Lee, W.-H., additional, Li, J.-Y., additional, Shieh, J.-M., additional, Tarng, J.-H., additional, Wang, Y.-H., additional, and Yeh, W.-K., additional

Published
2021
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16. Optical design and performance of the biological small-angle X-ray scattering beamline at the Taiwan Photon Source

Author

Liu, D.-G., primary, Chang, C.-H., additional, Chiang, L.-C., additional, Lee, M.-H., additional, Chang, C.-F., additional, Lin, C.-Y., additional, Liang, C.-C., additional, Lee, T.-H., additional, Lin, S.-W., additional, Liu, C.-Y., additional, Hwang, C.-S., additional, Huang, J.-C., additional, Kuan, C.-K., additional, Wang, H.-S., additional, Liu, Y.-C., additional, Tseng, F.-H., additional, Chuang, J.-Y., additional, Liao, W.-R., additional, Li, H.-C., additional, Su, C.-J., additional, Liao, K.-F., additional, Yeh, Y.-Q., additional, Shih, O., additional, Wu, W.-R., additional, Wang, C.-A., additional, and Jeng, U., additional

Published
2021
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22. First Demonstration of heterogenous Complementary FETs utilizing Low-Temperature (200 °C) Hetero-Layers Bonding Technique (LT-HBT)

Author

Hong, T.-Z., primary, Chang, W.-H., additional, Agarwal, A., additional, Huang, Y.-T., additional, Yang, C.-Y., additional, Chu, T.-Y., additional, Chao, H.-Y., additional, Chuang, Y., additional, Chung, S.-T., additional, Lin, J.-H., additional, Luo, S.-M., additional, Tsai, C.-J., additional, Li, M.-J., additional, Yu, X.-R., additional, Lin, N.-C., additional, Cho, T.-C., additional, Sung, P.-J., additional, Su, C.-J., additional, Luo, G.-L., additional, Hsueh, F.-K., additional, Lin, K.-L., additional, Ishii, H., additional, Irisawa, T., additional, Maeda, T., additional, Wu, C.-T., additional, Ma, W. C.-Y., additional, Lu, D.-D., additional, Kao, K.-H., additional, Lee, Y.-J., additional, Chen, H. J.-H., additional, Lin, C.-L., additional, Chuang, R. W., additional, Huang, K.-P., additional, Samukawa, S., additional, Li, Y.-M., additional, Tarng, J.-H., additional, Chao, T.-S., additional, Miura, M., additional, Huang, G.-W., additional, Wu, W.-F., additional, Li, J.-Y., additional, Shieh, J.-M., additional, Wang, Y.-H., additional, and Yeh, W.-K., additional

Published
2020
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23. 3D Integration of Vertical-Stacking of MoS2 and Si CMOS Featuring Embedded 2T1R Configuration Demonstrated on Full Wafers

Author

Su, C. J., primary, Huang, M. K., additional, Lee, K. S., additional, Hu, V. P. H., additional, Huang, Y. F., additional, Zheng, B. C., additional, Yao, C. H., additional, Lin, N. C., additional, Kao, K. H., additional, Hong, T. C., additional, Sung, P. J., additional, Wu, C. T., additional, Yu, T. Y., additional, Lin, K. L., additional, Tseng, Y. C., additional, Lin, C. L., additional, Lee, Y. J., additional, Chao, T. S., additional, Li, J. Y., additional, Wu, W. F., additional, Shieh, J. M., additional, Wang, Y. H., additional, and Yeh, W. K., additional

Published
2020
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27. First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications

Author

Chang, S.-W., primary, Li, J.-H., additional, Huang, M.-K., additional, Huang, Y.-C., additional, Huang, S.-T., additional, Wang, H.-C., additional, Huang, Y.-J., additional, Wang, J.-Y., additional, Yu, L. - W, additional, Huang, Y.-F., additional, Hsueh, F. - K., additional, Sung, P.-J., additional, Wu, C.-T., additional, Ma, W. C.-Y., additional, Kao, K.-H., additional, Lee, Y. - J., additional, Lin, C.-L., additional, Chuang, R. W., additional, Huang, K.-P., additional, Samukawa, S., additional, Li, Y., additional, Lee, W. - H., additional, Chu, T-Y., additional, Chao, T.-S., additional, Huang, G. - W., additional, Wu, W.-F., additional, Li, J. - Y., additional, Shieh, J.-M., additional, Yeh, W. - K., additional, Wang, Y.-H., additional, Lu, D. D., additional, Wang, C.-J., additional, Lin, N.-C., additional, Su, C.-J., additional, Lo, S.-H., additional, and Huang, H.-F., additional

Published
2019
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28. Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications

Author

Sung, P. -J, Chang, C. -Y, Chen, L. -Y, Kao, K. -H, Su, C. -J, Liao, T. -H, Fang, C. -C, Wang, C. -J, Hong, T. -C, Jao, C. -Y, Hsu, H. -S, Luo, S. -X, Wang, Y. -S, Huang, H. -F, Li, J. -H, Huang, Y. -C, Hsueh, F. -K, Wu, C. -T, Huang, Y. -M, Hou, F. -J, Luo, G. -L, Shen, Y. -L, Ma, W. C. -Y, Huang, K. -P, Lin, K. -L, Seiji Samukawa, Li, Y., Huang, G. -W, Lee, Y. -J, Li, J. -Y, Wu, W. -F, Shieh, J. -M, Chao, T. -S, Yeh, W. -K, Wang, Y. -H, and IEEE

Subjects
010302 applied physics, Materials science, Fabrication, business.industry, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Surface finish, 021001 nanoscience & nanotechnology, 01 natural sciences, Noise margin, CMOS, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Inverter, Dry etching, 0210 nano-technology, business, Voltage, Nanosheet
Abstract

For the first time, CMOS inverters with different numbers of vertically stacked junctionless (JL) nanosheets (NSs) are demonstrated. All fabrication steps were below 600 °C, and 8-nm thick poly-Si NSs with smooth surface roughness were formed by a dry etching process. Compared to single channel devices, stacked n/p-channel FETs exhibit higher on-current with low leakage current. Furthermore, a common-gate process was performed for the fabrication of CMOS inverters. By adjusting the NS layer numbers for n/pFETs, respectively, the voltage transfer characteristics (VTCs) of the CMOS inverter can be matched much better to reduce the noise margin due to on-current matching without area penalty. This work experimentally demonstrates a new configuration of CMOS inverters on stacked NSs, which is promising for System-on-Panel (SoP) and 3D-ICs applications.

Published
2018

34. A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs

Author

Tang, Y.-T, primary, Fan, C.-L., additional, Kao, Y.-C., additional, Modolo, N., additional, Su, C.-J., additional, Wu, T.-L., additional, Kao, K.-H., additional, Wu, P.-J., additional, Hsaio, S.-W., additional, Useinov, A., additional, Su, Pin, additional, Wu, W.-F., additional, Huang, G.-W., additional, Shieh, J.-M., additional, Yeh, W.-K., additional, and Wang, Y.-H., additional

Published
2019
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35. Fabrication of $\Omega$ -gated Negative Capacitance FinFETs and SRAM

Author

Sung, P.-J., primary, Su, C.-J., additional, Lu, D. D., additional, Luo, S.-X., additional, Kao, K.-H., additional, Ciou, J.-Y., additional, Jao, C.-Y., additional, Hsu, H.-S., additional, Wang, C.-J., additional, Hong, T.-C., additional, Liao, T.-H., additional, Fang, C.-C., additional, Wang, Y.-S., additional, Huang, H.-F., additional, Li, J.-H., additional, Huang, Y.-C., additional, Hsueh, F.-K., additional, Wu, C.-T., additional, Ma, W. C.-Y., additional, Huang, K.-P., additional, Lee, Y.-J., additional, Chao, T.-S., additional, Li, J.-Y., additional, Wu, W.-F., additional, Yeh, W.-K., additional, and Wang, Y.-H., additional

Published
2019
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36. A Comprehensive Study of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Layer Effects on Negative Capacitance FETs for Sub-5 nm Node

Author

Tang, Y.-T, primary, Su, C.-J., additional, Wang, Y.-S., additional, Kao, K.-H., additional, Wu, T.-L., additional, Sung, P.-J., additional, Hou, F.-J., additional, Wang, C.-J., additional, Yeh, M.-S., additional, Lee, Y.-J., additional, Wu, W.-F., additional, Huang, G.-W., additional, Shieh, J.-M., additional, Yeh, W.-K., additional, and Wang, Y.-H., additional

Published
2018
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37. Ge FinFET CMOS Inverters with Improved Channel Surface Roughness by Using In-situ ALD Digital O3 Treatment

Author

Yeh, M.-S., primary, Luo, G.-L., additional, Hou, F.-J., additional, Sung, P.-J., additional, Wang, C.-J., additional, Su, C.-J., additional, Wu, C.-T., additional, Huang, Y.-C., additional, Hong, T.-C., additional, Chao, T.-S., additional, Chen, B.-Y., additional, Chen, K.-M., additional, Izawa, M., additional, Miura, M., additional, Morimoto, M., additional, Ishimura, H., additional, Lee, Y.-J., additional, Wu, W.-F., additional, and Yeh, W.-K., additional

Published
2018
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39. Ge nanowire FETs with HfZrOx ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability

Author

Su, C.-J., primary, Hong, T.-C., additional, Tsou, Y.-C., additional, Hou, F.-J., additional, Sung, P.-J., additional, Yeh, M.-S., additional, Wan, C.-C., additional, Kao, K.-H., additional, Tang, Y.-T., additional, Chiu, C.-H., additional, Wang, C.-J., additional, Chung, S.-T., additional, You, T.-Y., additional, Huang, Y.-C., additional, Wu, C.-T., additional, Lin, K.-L., additional, Luo, G.-L., additional, Huang, K.-P., additional, Lee, Y.-J., additional, Chao, T.-S., additional, Wu, W.-F., additional, Huang, G.-W., additional, Shieh, J.-M., additional, Yeh, W.-K., additional, and Wang, Y.-H., additional

Published
2017
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40. Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION

Author

Su, C.-J., primary, Tang, Y.-T, additional, Tsou, Y.-C., additional, Sung, P.-J., additional, Hou, F.-J., additional, Wang, C.-J., additional, Chung, S.-T., additional, Hsieh, C.-Y., additional, Yeh, Y.-S., additional, Hsueh, F.-K., additional, Kao, K.-H., additional, Chuang, S.-S., additional, Wu, C.-T., additional, You, T.-Y., additional, Jian, Y.-L., additional, Chou, T.-H., additional, Shen, Y.-L., additional, Chen, B.-Y., additional, Luo, G.-L., additional, Hong, T.-C., additional, Huang, K.-P., additional, Chen, M.-C., additional, Lee, Y.-J., additional, Chao, T.-S., additional, Tseng, T.-Y., additional, Wu, W.-F., additional, Huang, G.-W., additional, Shieh, J.-M., additional, Yeh, W.-K., additional, and Wang, Y.-H., additional

Published
2017
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41. High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications

Author

Lee, Y.-J., primary, Hong, T.-C., additional, Hsueh, F.-K., additional, Sung, P.-J., additional, Chen, C.-Y., additional, Chuang, S.-S., additional, Cho, T.-C., additional, Noda, S., additional, Tsou, Y.-C., additional, Kao, K.-H., additional, Wu, C.-T., additional, Yu, T.-Y., additional, Jian, Y.-L., additional, Su, C.-J., additional, Huang, Y.-M., additional, Huang, W.-H., additional, Chen, B.-Y., additional, Chen, M.-C., additional, Huang, K.-P., additional, Li, J.-Y., additional, Chen, M.-J., additional, Li, Y., additional, Samukawa, S., additional, Wu, W.-F., additional, Huang, G.-W., additional, Shieh, J.-M., additional, Tseng, T.-Y., additional, Chao, T.-S., additional, Wang, Y.-H., additional, and Yeh, W.-K., additional

Published
2016
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43. Novel Information Distribution Methods to Massive Mobile User Populations

Author

Su, C-J., ISR, CSHCN, Su, C-J., Tassiulas, L., Su, C-J., ISR, CSHCN, Su, C-J., and Tassiulas, L.

Abstract

Broadcast data delivery is encountered in many applications where there is a need to disseminate information to a large user community in a wireless asymmetric military communication environment. In this paper, we consider two types of broadcast data delivery systems, namely, push-based and pull-based, and provide a low-complexity near-optimal scheduling algorithms for both systems. By using a numerical study we also discuss the performance limit of a pull-based system. In addition, we identify the optimal memory management policy for the users in a push-based broadcast delivery system and propose implementable alternatives to the optimal policy.

Published
1997

44. A NEW Method to Design Broadcast Schedules in a Wireless Communication Environment

Author

Su, C. J., ISR, Su, C. J., Tassiulas, L., Tsotras, V., Su, C. J., ISR, Su, C. J., Tassiulas, L., and Tsotras, V.

Abstract

Wireless data broadcasting is a promising way of disseminating information to a massive number of clients in an asymmetric communication environment where client-to-server communication is infeasible. An important issue to be addressed in data broadcasting is how to organize the data in the broadcast in such a way that the access latency of client page requests is minimized. Due to the lack of communication from clients to the server, the server cannot know what a client needs at the current slot. We consider a broadcasting policy in which the server transmits, at each slot, the page which is most likely to be requested by the client, given the history of previous broadcasts. The policy is easily implementable since a simple recursive algorithm provides the conditional distribution of page requests at slot n from the same distribution at slot n-1. The policy derives broadcasting sequences which are periodic in steady state and incurs low latency for page requests as it is verified by extensive numerical experiments with a wide variety of page request processes. Hence, it provides a valuable method for designing broadcasting schedules for both correlated and uncorrelated page request sequences.

Published
1996

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