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We report on non-linear transport phenomena at high filling factor and DC current-induced electronic hydrodynamics in an ultra-high mobility (mu=20x10^6 cm^2/Vs) two-dimensional electron gas in a narrow (15 micron wide) GaAs/AlGaAs Hall bar for DC current densities reaching 0.67 A/m. The various phenomena and the boundaries between the phenomena are captured together in a two-dimensional differential resistivity map as a function of magnetic field (up to 250 mT) and DC current. This map, which resembles a phase diagram, demarcate distinct regions dominated by Shubnikov-de Haas (SdH) oscillations (and phase inversion of these oscillations) around zero DC current; negative magnetoresistance and a double-peak feature (both ballistic in origin) around zero field; and Hall field-induced resistance oscillations (HIROs) radiating out from the origin. From a detailed analysis of the data near zero field, we show that increasing the DC current suppresses the electron-electron scattering length that drives a growing hydrodynamic contribution to both the differential longitudinal and transverse (Hall) resistivities. Our approach to induce hydrodynamics with DC current differs from the more usual approach of changing the temperature. We also find a significant (factor of two to four) difference between the quantum lifetime extracted from SdH oscillations, and the quantum lifetime extracted from HIROs. In addition to observing HIRO peaks up to the seventh order, we observe an unexpected HIRO-like feature close to mid-way between the first-order and the second-order HIRO maxima at high DC current.

Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, make two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we fabricate devices based on heterostructures of layered 2D materials, in which we realize gate-controlled tungsten diselenide (WSe2) hole quantum dots. We discuss the observed mesoscopic transport features related to the emergence of quantum dots in the WSe2 device channel, and we compare them to a theoretical model., Comment: 6 pages, 4 figures

We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map out the complete spectra of the two-hole system. By performing measurements in both source-drain voltage directions, at different detunings and magnetic fields, we carry out quantitative fitting to a Hubbard two-site model accounting for the tunnel coupling to the leads and the spin-flip relaxation process. We extract the singlet-triplet gap and the magnetic field corresponding to the singlet-triplet transition in the double-hole ground state. Additionally, at the singlet-triplet transition we find a resonant enhancement (in the blockaded direction) and suppression of current (in the conduction direction). The current enhancement stems from the multiple resonance of two-hole levels, opening several conduction channels at once. The current suppression arises from the quantum interference of spin-conserving and spin flipping tunneling processes., Comment: 43 pages, 14 figures

We study experimentally and theoretically the in-plane magnetic field dependence of the coupling between dots forming a vertically stacked double dot molecule. The InAsP molecule is grown epitaxially in an InP nanowire and interrogated optically at millikelvin temperatures. The strength of interdot tunneling, leading to the formation of the bonding-antibonding pair of molecular orbitals, is investigated by adjusting the sample geometry. For specific geometries, we show that the interdot coupling can be controlled in-situ using a magnetic field-mediated redistribution of interdot coupling strengths. This is an important milestone in the development of qubits required in future quantum information technologies., Comment: 5 pages, 3 figures

We perform Landau-Zener-Stuckelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum dot. In analogy to the electron systems, at magnetic field B=0 and high modulation frequencies we observe the photon-assisted tunneling (PAT) between dots, which smoothly evolves into the typical LZSM funnel-shaped interference pattern as the frequency is decreased. In contrast to electrons, the SOI enables an additional, efficient spin-flipping interdot tunneling channel, introducing a distinct interference pattern at finite B. Magneto-transport spectra at low-frequency LZSM driving show the two channels to be equally coherent. High-frequency LZSM driving reveals complex photon-assisted tunneling pathways, both spin-conserving and spin-flipping, which form closed loops at critical magnetic fields. In one such loop an arbitrary hole spin state is inverted, opening the way toward its all-electrical manipulation., Comment: 6 pages, 4 figures, and supplementary material

Strong confinement of charges in few electron systems such as in atoms, molecules and quantum dots leads to a spectrum of discrete energy levels that are often shared by several degenerate quantum states. Since the electronic structure is key to understanding their chemical properties, methods that probe these energy levels in situ are important. We show how electrostatic force detection using atomic force microscopy reveals the electronic structure of individual and coupled self-assembled quantum dots. An electron addition spectrum in the Coulomb blockade regime, resulting from a change in cantilever resonance frequency and dissipation during tunneling events, shows one by one electron charging of a dot. The spectra show clear level degeneracies in isolated quantum dots, supported by the first observation of predicted temperature-dependent shifts of Coulomb blockade peaks. Further, by scanning the surface we observe that several quantum dots may reside on what topologically appears to be just one. These images of grouped weakly and strongly coupled dots allow us to estimate their relative coupling strengths., Comment: 11 pages, 6 figures

We analyze theoretically and experimentally the electronic structure and charging diagram of three coupled lateral quantum dots filled with electrons. Using the Hubbard model and real-space exact diagonalization techniques we show that the electronic properties of this artificial molecule can be understood using a set of topological Hunds rules. These rules relate the multi-electron energy levels to spin and the inter-dot tunneling $t$, and control charging energies. We map out the charging diagram for up to N=6 electrons and predict a spin-polarized phase for two holes. The theoretical charging diagram is compared with the measured charging diagram of the gated triple-dot device., Comment: 31 pages, 7 figures, accepted to March 15, 2007 issue of Phys. Rev. B, vol. 75

Quantum dots are considered building blocks for future quantum information circuits. We present here experimental results on a quantum dot circuit consisting of three quantum dots with controlled electron numbers down to one per dot and tunable coupling. We experimentally map out for the first time the stability diagram of the triatomic system and reveal the existence of quadruple points, a signature of the three dots being in resonance. In their vicinity we observe a surprising effect, a 'cloning' of charge transfer transitions related to charge and spin reconfigurations. The experimental results are reproduced by equivalent circuit analysis and Hubbard models.

Single electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were measured as a function of the tip-back electrode voltage and the resulting spectra show distinct jumps when the tip was positioned above the dot. The observed jumps in the frequency shift, with corresponding peaks in dissipation, are attributed to a single electron tunneling between the dot and the back electrode governed by Coulomb blockade effect, and are consistent with a model based on the free energy of the system. The observed phenomenon may be regarded as the ``force version'' of the Coulomb blockade effect., Comment: 4 pages, 4 figures