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287 results on '"Streubel, K."'

3. Strong high order diffraction of guided modes in micro-cavity light-emitting diodes with hexagonal photonic crystals

Author

Bergenek, K., Wiesmann, C., Zull, H., Rumbolz, C., Wirth, R., Linder, N., Streubel, K., and Krauss, T. F.

Subjects
Diffraction -- Analysis, Indium -- Electric properties, Indium -- Optical properties, Light-emitting diodes -- Composition, Light-emitting diodes -- Electric properties, Light-emitting diodes -- Optical properties, Photonics -- Analysis, Business, Computers, Electronics, Electronics and electrical industries
Published
2009

5. Experimental determination of the internal quantum efficiency of AlGalnP microcavity light-emitting diodes

Author

Royo, P., Stanley, R.P., Illegems, M., Streubel, K., and Gulden, K.H.

Subjects
Indium -- Optical properties, Gallium -- Optical properties, Aluminum -- Optical properties, Quantum chemistry -- Research, Light-emitting diodes -- Research, Chemistry
Abstract

The external quantum efficiency of AlGaInP-based microcavity light-emitting diodes (MCLEDs) was measured. This allowed exact calculation of the extraction efficiency for both MCLED and LED.

Published
2002

7. Wafer fused p-InP/p-GaAs heterojunctions

Author

Salomonsson, F., Streubel, K., Bentell, J., Hammar, M., Keiper, D., Westphalen, R., Piprek, J., Sagalowicz, L., Rudra, A., and Behrend, J.

Subjects
Integrated circuits -- Wafer-scale integration, Semiconductor doping -- Research, Semiconductor wafers -- Research, Semiconductors -- Junctions, Physics
Abstract

The design and characterization of low resistive wafer-fused heterojunctions between p-InP and p-GaAs were investigated. Doping profiles across the interface and interface contamination with carbon or oxygen were characterized using secondary ion mass spectroscopy. Results showed that the wafer-fused heterojunctions had high crystalline quality. Moreover, the large lattice mismatch between InP and GaAs was accommodated by edge dislocations.

Published
1998

8. Interfacial properties of very thin GaInAs/InP quantum well structures grownby metalorganic vapor phase epitaxy

Author

Streubel, K., Harle, V., Scholz, F., Bode, M., and Grundmann, M.

Subjects
Quantum wells -- Research, Physics
Abstract

The interfacial characteristics of GaInAs/InP single quantum well structures grown by reduced-pressure metalorganic vapor phase epitaxy were investigated. The results showed that the formation of growth islands at the interface caused thephotoluminescence of the quantum wells to divide into multiplets. The growth islands exhibited some degree of roughness and small microislands formed the internal interface structure.

Published
1992

9. Internal quantum efficiency of high-brightness AlGaInP light-emitting devices

Author

Altieri, P., Jaeger, A., Windisch, R., Stauss, P., Oberschmid, R., and Streubel, K.

Subjects
Light-emitting diodes -- Design and construction, Gallium arsenide semiconductors -- Design and construction, Indium -- Optical properties, Physics
Abstract

The internal quantum efficiency of [Al(sub x)Ga(sub 1-x)]0.5 In0.5P light-emitting devices (LEDs), with an emission wavelength ranging from 650 to 560 nm is determined. At high currents, the LED internal quantum efficiency drops from red to green, mainly due to carrier leakage over the confinement layers.

Published
2005

10. Interfacial properties of very thin GaInAs/InP quantum well structures grown by metalorganic vapor phase epitaxy.

Author

Streubel, K., Härle, V., Scholz, F., Bode, M., and Grundmann, M.

Subjects
*QUANTUM wells, *ENERGY-band theory of solids
Abstract

Presents information on a study that grown GaInAs/InP single quantum well structures with thicknesses below five nanometer by metalorganic vapor phase epitaxy at reduced pressure. Experimental procedure; Results and discussion on the study.

Published
1992
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11. Excitonic transitions and exciton damping processes in InGaAs/InP.

Author

Zielinski, E., Schweizer, H., Streubel, K., Eisele, H., and Weimann, G.

Subjects
ABSORPTION spectra, INDIUM, GALLIUM arsenide, INDIUM phosphide
Abstract

Presents a study which examined the absorption spectra of indium gallium arsenide/indium phosphide lattice matched to indium phosphide. Details of the absorption measurements; Experiment; Analysis of the exciton absorption.

Published
1986
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12. Luminescence properties of thick InGaN quantum-wells

Author

Laubsch, A., Bergbauer, W., Sabathil, M., Strassburg, M., Lugauer, H., Peter, M., Meyer, T., Brüderl, G., Wagner, J., Linder, N., Streubel, K., Hahn, B., and Publica

Abstract

In this paper, we discuss the physics of recombination in thick InGaN quantum-well (QW) based structures. Thick InGaN QWs have been suggested as one concept to reduce the typical decrease of internal efficiency of InGaN based light emitters towards high current densities. We show that at typical operation current densities, recombination in such thick QWs mainly originates from excited QW-states, which exhibit good electron hole overlap and large spatial extent, enabling a reduction of carrier density. We identify these states by comparing current dependent electroluminescence spectra to band structure simulations. The reduction of carrier density is verified by measuring current dependent carrier lifetimes. We find that saturation of efficiency is reduced for increasedQWthickness. However, the same effect can also be achieved using an MQW structure optimized for real MQW emission. We conclude that regardless of the employed concept, a decrease in carrier density is central to improve the high current efficiency of InGaN based light emitters.

Published
2009

13. Submilliamp long-wavelength vertical-cavity lasers

Author

Margalit, N. M., Babić, D. I., Streubel, K., Mirin, R. P., Bowers, V, and Hu, E. L.

Subjects
Laser, Current density, Mirrors
Abstract

The authors demonstrate a low threshold laterally oxidised long wavelength (1.55 μm) vertical cavity laser. The devices exhibit the first submilliamp threshold current (0.8 mA) as well as the highest reported operating temperatures (64°C CW and 95°C pulsed) of any long wavelength vertical cavity laser

Published
1996

14. Room-temperature performance of double-fused 1.54 um vertical-cavity lasers

Author

Babić, D. I., Streubel, K., Mirin, R. P., Piprek, J. , Margalit, N. M., Bowers, J. E., Hu, E. L., Mars, D. E., Yang, L., and Carey, K.

Subjects
Vertical cavity surface emitting lasers, Mirrors, Optical pulse generation, Absorption, Pulse measurements, Quantum well lasers, Doping, Temperature, Propagation losses, Size measurement
Abstract

The progress in understanding wafer-fused vertical-cavity lasers and improvements in fabrication techniques have led to the realization of the first room-temperature continuous-wave operating 1.54-um vertical- cavity lasers. By demonstrating continuous-wave operation at room temperature using vertical- cavity lasers fabricated by two wafer fusion steps, we have shown that wafer fusion is a viable technique. The lasers comprise strain compensated InGaAsP quantum-well active layers sandwiched between two AlGaAs/GaAs quarter-wave mirrors. Characteristics discussed include cavity losses, the gain-current density relationship, and voltage-current characteristics.

Published
1996

15. Multimore Fibre Transmission Using Room- Temperature Double-Fused 1.54 um Vertical- Cavity Lasers

Author

Blixt, P., Babić, D. I., Margalit, N. M., Streubel, K., and Bowers, J. E.

Subjects
Physics::Optics, Temperature, Mirrors, Fiber lasers, Vertical cavity surface emitting lasers, Optical fiber devices, Local area networks, Optical fiber testing, Threshold current, Threshold voltage, Reflectivity, Physics::Atomic Physics
Abstract

We present the very first long-wavelength vertical-cavity laser (VCL) multimode transmission experiments. These lasers are ideal for local area networks.

Published
1996

16. Laterally oxidized long wavelength CW vertical- cavity lasers

Author

Margalit, N. M., Babić, D. I., Streubel, K., Mirin, R. P., Zhang, S., Mars, D. E., Bowers, J. E., and Hu, E. L.

Subjects
High temperature instruments, Oxidation, Low temperature instruments, Mirrors, Laser resonators
Abstract

We report a novel long wavelength(1.55 μm) vertical cavity laser using a current constricting AlAs oxidation layer. The devices exhibit record low room temperature continuous wave (cw) threshold current(1.3 mA) and highest cw operating temperature reported for long wavelength VCLs(39 °C). Wafer fusion is used to combined seven strain compensated InGaAsP wells between two Al(Ga)As/GaAs quarter wave mirrors.

Published
1996

17. Transverse-mode and polarisation characteristics of double-fused 1.52 um vertical-cavity lasers

Author

Babić, Dubravko I., Dudley, J.J., Streubel, K., Mirin, R.P., Margalit, N.M., Bowers, J.E., and Hu, E.L.

Subjects
Aluminum compounds, Gallium compounds, Indium compounds, Laser modes, Optical polarization, Quantum well lasers, Surface-emitting lasers
Abstract

The authors report the transverse mode and polarisation characteristics of a novel 1.52 mu m vertical-cavity laser that utilises an InGaAsP strain-compensated quantum-well active layer and two AlAs/GaAs quarter-wave mirrors. The devices exhibit 4 mA room-temperature pulsed threshold current and 14 mW output power.

Published
1995

18. Long wavelength vertical cavity surface emitting lasers

Author

Streubel, K., Rapp, S., André, J., Lourdudoss, S., and Babić, D.

Subjects
Lasers, Optics, Electronics, Astrophysics::High Energy Astrophysical Phenomena, Physics::Accelerator Physics, Physics::Optics, Physics::Atomic Physics
Abstract

Long wavelength vertical cavity emitting lasers

Published
1995

19. Optically pumped all-epitaxial wafer-fused 1.52-µm vertical cavity lasers

Author

Babić, D. I., Dudley, J. J., Streubel, K., Mirin, R. P., Hu, E. L., and Bowers, J. E.

Subjects
ndium compounds, Laser resonators, Mirrors, Epitaxial growth, Optical pumping, Semiconductor growth, Semiconductor lasers
Abstract

The authors demonstrate for the first time the room-temperature pulsed operation of all- epitaxial vertical cavity lasers operating at 1.52 mu m using optical pumping. The laser cavity is formed by bonding an MOCVD-grown InGaAsP/InP mirror to an MBE-grown AlAs/GaAs mirror using the wafer fusion technique.

Published
1994

20. Double-fused 1.52-µm vertical cavity lasers

Author

Babić, D.I., Dudley, J.J., Streubel, K., Mirin, R.P., Margalit, N. M., Hu, E.L., and Bowers, J.E.

Subjects
Laser fusion, Current density, Mirrors, Physics::Optics
Abstract

We demonstrate a novel long‐wavelength vertical‐cavity laser structure employing two AlAs/GaAs mirrors and a strain‐compensated InGaAsP quantum‐well active region. The lasers have been fabricated by wafer fusion and have the lowest room‐temperature pulsed threshold current density of 3 kA/ cm2 at 1.52 μm. Eight laser sizes ranging from 9 to 60 μm were fabricated with threshold currents as low as 12 mA. Single transverse mode operation was observed on the 9 μm device, while other devices lased multimode. The maximum pulsed output power was 7 mW.

Published
1994

25. The optical Hall effect

Author

Hofmann, T., primary, Herzinger, C. M., additional, Krahmer, C., additional, Streubel, K., additional, and Schubert, M., additional

Published
2008
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26. Novel technologies for 1.55-mu m vertical cavity lasers

Author

Streubel, K., Hammar, Mattias, Salomonsson, F., Bentell, J., Mogg, S., Rapp, S., Jacquet, J., Boucart, J., Stark, C., Plais, A., Gaborit, F., Derouin, E., Bouche, N., Rudra, A., Syrbu, A. V., Iakovlev, V. P., Berseth, C. A., Dehaese, O., Kapon, E., Moussa, H., Sagnes, I., Streubel, K., Hammar, Mattias, Salomonsson, F., Bentell, J., Mogg, S., Rapp, S., Jacquet, J., Boucart, J., Stark, C., Plais, A., Gaborit, F., Derouin, E., Bouche, N., Rudra, A., Syrbu, A. V., Iakovlev, V. P., Berseth, C. A., Dehaese, O., Kapon, E., Moussa, H., and Sagnes, I.

Abstract

We report on three novel vertical-cavity laser (VCL) structures for 1.55-mu m operation. Two of the structures utilize an n-type GalnAsP/InP Bragg mirror combined with an Al(Ga)As/GaAs mirror using either wafer fusion or metamorphic epitaxial growth. The third employs two wafer-fused AlGaAs/GaAs mirrors, in which lateral current confinement is obtained by localized fusion of the p mirror. Ali three VCLs use strained GalnAsP quantum welts as active material and achieve continuous-wave (cw) operation at room temperature or above. The single fused VCL operates up to 17 and 101 degrees C in continuous-wave and pulsed mode, respectively. The monolithic VCL-structure with a metamorphic GaAs/AlAs n-type mirror uses a reverse-biased tunnel junction for current injection. This laser achieves record high output power (1 mW) at room temperature and operates cw up to 45 degrees C. The double fused VCLs with a 10x10-mu m(2) active area operate cw up to 30 degrees C with threshold current as low as 2.5 mA and series resistance of 30 Omega. The emission spectra exhibit a single lasing mode polarized with 30-dB extinction ratio and a spectral linewidth of 150 MHz., QC 20100525

Published
2000
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27. Studies of self-assembled InP quantum dots in planar microcavities

Author

Zwiller, V., Chitica, N., Persson, J., Pistol, M. -E, Seifert, W., Samuelson, L., Hammar, M., Streubel, K., Goobar, E., Björk, G., Zwiller, V., Chitica, N., Persson, J., Pistol, M. -E, Seifert, W., Samuelson, L., Hammar, M., Streubel, K., Goobar, E., and Björk, G.

Abstract

Self-assembled InP quantum dots have been grown in planar microcavities. The dots were embedded in a Ga0.52In0.48P spacer grown on top of a high reflectance epitaxial Al0.29Ga0.71As/AlAs distributed Bragg reflector (DBR) to obtain a 33λ/4 cavity. The Fabry-Perot microcavity is formed between the AlGaAs/AlAs DBR and a dielectric SiNx/SiO2 DBR deposited on top of the GaInP spacer. The quantum dot emission is centered at 1.62 eV at 7 K. The microcavity resonance is centered at 1.65 eV, with a linewidth of 2 meV. Micro-photoluminescence (PL) studies using different objectives with different numerical apertures enable the collection of transversal modes., References: Weisbuch, C., Houdre, R., Stanley, R., (1996) Phys. Scripta, T66, p. 121; Berman, P.R., (1994) Cavity Quantum Electrodynamics, , Academic Press, New York; Gerard, J.M., Sermage, B., Gayral, B., Legrand, B., Costard, E., Thierry-Mieg, V., (1998) Phys. Rev. Lett., 81, p. 1110; Graham, L.A., Huffaker, D.L., Deng, Q., Deppe, D.G., (1998) Appl. Phys. Lett., 72, p. 1670; Huffaker, D.L., Park, G., Zhou, Z., Shchekin, O.B., Deppe, D.G., (1998) Appl. Phys. Lett., 73, p. 2564; Moritz, A., Wirth, R., Hangleiter, A., Kurtenbach, A., Eberl, K., (1996) Appl. Phys. Lett., 69, p. 212; Eberl, K., Kurtenbach, A., Zundel, M., Jin-Phillipp, N.Y., Phillipp, F., Moritz, A., Wirth, R., Hangleiter, A., (1997) J. Cryst. Growth, 175-176, p. 702; Zundel, M., Jin-Phillipp, N.Y., Phillipp, F., Eberl, K., Riedl, T., Fehrenbacher, E., Hangleiter, A., (1998) Appl. Phys. Lett., 73, p. 1784; Riedl, T., Fehrenbacher, E., Hangleiter, A., Zundel, M.K., Eberl, K., (1998) Appl. Phys. Lett., 73, p. 3730; Georgson, K., Carlsson, N., Samuelson, L., Seifert, W., Wallenberg, L.R., (1995) Appl. Phys. Lett., 67, p. 2981; Hessman, D., Castrillo, P., Pistol, M.-E., Anand, S., Carlsson, N., Seifert, W., Samuelson, L., (1996) Appl. Phys. Lett., 67, p. 749; Zwiller, V., Pistol, M.-E., Hessman, D., Cederström, R., Seifert, W., Samuelson, L., (1999) Phys. Rev. B, 59, p. 5021; Carlsson, N., Seifert, W., Petersson, A., Castrillo, P., Pistol, M.-E., Samuelson, L., (1994) Appl. Phys. Lett., 65, p. 3093; Born, M., Wolf, E., (1994) Principles of Optics, , Pergamon, Oxford NR 20140805

Published
2000
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29. InP-based 1.55ÎŒm Resonant Cavity Light-Emitting Diode with two Epitaxial Mirrors

Author

Salomonsson, F., Rapp, S., Streubel, K., Hammar, M., Daleiden, J., Salomonsson, F., Rapp, S., Streubel, K., Hammar, M., and Daleiden, J.

Abstract

We report on the fabrication and characterisation of a resonant cavity light-emitting diode (RCLED) operating at 1.55 Όm. As compared to conventional LEDs such devices merit from a higher emission intensity with a more narrow linewidth and are therefore promising as light sources in fibre optical communication systems. The present design is based on an InGaAsP multi-quantum well structure and utilises two InGaAsP/InP epitaxial distributed Bragg reflectors (DBRs), one 50 periods high reflectivity bottom mirror and a top out-coupling mirror with lower reflectivity. This gives the advantage of top-emission combined with the possibility of achieving very narrow linewidth. The process is fully monolithic and full wafer scale compatible., References: Purcel, E.M., (1946) Phys. Rev., 69, p. 681; Shubert, E.F., Hunt, N.E.J., Malik, R.J., Micovic, M., Miller, D.L., (1996) J. Lightwave Technol., 14, p. 1721; De Neve, H., (1995) Phot. Techn. Lett., 7, p. 287; Corbett, B., Considine, L., Walsh, S., Kelly, W.M., (1993) Phot. Techn. Lett., 5, p. 1041; Hunt, N.E.J., Shubert, E.F., Logon, E.F., Zydzik, G.J., (1992) Appl. Phys. Lett., 61, p. 2287; Depreter, B., InP microcavity LED emitting at 1.55 Όn LEOS, p. 241. , Nov 97, San Francisco, Ca, USA; Christenson, G.L., (1997) Phot. Techn. Lett., 9, p. 725; Streubel, K., (1994) J. Cryst. Growth, 143, p. 7; Lourdudoss, S., (1994) Mat. Sci. Eng., B28, p. 179; De Neve, H., (1997) Appl. Phys. Lett., 70, p. 799; Rapp, S., All Epitaxial Single-Fused 1.55 Όm Vertical Cavity Laser Based on an InP Bragg Reflector (1998) Proceedings of the 10th International Conference on Indiumphosphide and Related Materials, p. 303. , 11-15 May Tsukuba Japan; Gebretsadik, H., Kamath, K., Zhou, W.-D., Battacharya, P., (1998) Appl. Phys. Lett., 72, p. 135; Streubel, K., Helin, U., BÀcklin, E., Johansson, Å., High Brightness Visible (660 nm) Resonant-Cavity Light-Emitting Diode Photon. Techn. Lett. NR 20140805

Published
1999

30. Characterisation of n-InP/n-GaAs Wafer Fused Heterojunctions

Author

Bentell, J., Wennekes, F., Salomonsson, F., Hammar, M., Streubel, K., Bentell, J., Wennekes, F., Salomonsson, F., Hammar, M., and Streubel, K.

Abstract

We have investigated the properties of wafer-fused Si-doped isotype hetero-junctions between GaAs and InP. Current/voltage measurements were conducted to study the influence of the doping concentrations on each side of the interface on the electrical conductivity. An almost ohmic behavior with a very low series resistance was obtained for the highest examined doping level on the GaAs side, whereas the doping concentration on the InP side was found to be of little significance. Fusion at different temperatures showed that the conductivity degrades significantly below 500°C, although mechanically stable junctions were obtained also at temperatures as low as 305°C. Secondary ion mass spectroscopy measurements showed no redistribution of Si, but indicated the presence of small amounts of C and Fe impurities at the interface., References: Liau, Mull, D.E., (1990) Appl. Phys. Lett., 56, p. 737; Lo, (1991) Appl. Phys. Lett., 58, p. 1961; Black, A., Zhu, Z.-H., (1997) IEEE J. Sel. Top. Quantum Electron., 3, p. 927; Margalit, N.M., (1997) IEEE J. Sel. Top. Quantum Electron., 3, p. 359; Salomonsson, F., (1998) J. Appl. Phys., 83, p. 768; Hammar, M., Proceedings of the 10th International Conference on Indium Phosphide and Related Materials (IPRM) '98, p. 801. , May 11-15, Tsukuba, Japan; Wada, H., Ogawa, Y., Kamijoh, T., (1993) Appl. Phys. Lett., 62, p. 738; Dudley, J.J., (1994), PhD dissertation, University of California, Santa BarbaraFarrow, R.F.C., (1974) J. Phys. D: Appl Phys., p. 2436; Sagalowicz, L., (1997) Phil. Mag. Lett., 76, p. 445 NR 20140805

Published
1999

31. Systematics of electrical conductivity across InP to GaAs wafer-fused interfaces

Author

Hammar, M., Wennekes, F., Salomonsson, F., Bentell, J., Streubel, K., Rapp, S., Keiper, D., Westphalen, R., Hammar, M., Wennekes, F., Salomonsson, F., Bentell, J., Streubel, K., Rapp, S., Keiper, D., and Westphalen, R.

Abstract

We report on the electrical and compositional characterization of wafer-fused isotype heterojunctions between Zn-, C- or Si-doped GaAs and Zn- or Si-doped InP. The junctions were characterized by current-voltage and secondary ion mass spectrometry (SIMS) measurements. It is demonstrated that very low-resistive junctions can be obtained in each case, but also that there is a strong influence from the detailed sample structure and processing conditions. SIMS was used to monitor the doping concentration across the interface as well as the impurity concentrations of oxygen, carbon and iron. © 1999 Publication Board, Japanese Journal of Applied Physics., References: Black, A., Hawkins, A.R., Margalit, N.M., Babic, D.I., Holmes, A.L., Chang Jr., Y.-L., Abraham, P., Hu, E.L., (1997) IEEE J. Sel. Top. Quantum Electron., 3, p. 927; Zhu, Z.-H., Ejeckham, F.E., Qian, Y., Zhang, J., Zhang, Z., Christenson, G.L., Lo, Y.H., (1997) IEEE J. Sel. Top. Quantum Electron., 3, p. 943; Qian, Y., Ahu, Z.H., Lo, Y.H., Huffaker, D.L., Dcppe, D.G., Hou, H.Q., Hammons, E.B., Tu, Y.K., (1997) Appl. Phys. Lett., 71, p. 25; Rapp, S., Salomonsson, F., Streubel, K., Mogg, S., Wennekes, F., Bentell, J., Hammar, M., (1999) Jpn. J. Appl. Phys., 38 (1 B); Margalit, N.M., Piprek, J., Zhang, S., Babic, D.I., Streubel, K., Mirin, R.P., Wesselman, J.R., Hu, E.L., (1997) IEEE J. Sel. Top. Quantum Electron., 3, p. 359; Salomonsson, F., Streubel, K., Bentell, J., Hammar, M., Keiper, D., Westphalen, R., Piprek, J., Behrend, J., (1998) J. Appl. Phys., 83, p. 768; Babic, D.I., (1995), Ph.D. dissertation, University of California, Santa BarbaranoteSagalowicz, L., Rudra, A., Syrbu, A., Behrend, J., Salomonsson, F., Streubel, K., Hammar, M., Bentell, J., (1997) Philos. Mag. Lett., 76, p. 445; Wennekes, F., (1997), Diploma Thesis, Royal Institute of TechnologyNolte, D.D., (1989) Appl. Phys. Lett., 54, p. 259; Wada, H., Ogawa, Y., Kamijoh, T., (1993) Appl. Phys. Lett., 62, p. 738; Okuno, Y., Uomi, K., Aoki, M., Tsuchiya, T., (1997) IEEE J. Quantum Electron, 33, p. 959; Dudley, J.J., (1994), Ph.D. dissertation, University of California, Santa BarbaraFarrow, R.F.C., (1974) J. Phys. D: Appl. Phys., p. 2436 NR 20140805

Published
1999

32. Near room-temperature continuous-wave operation of electrically pumped 1.55 ÎŒm vertical cavity lasers with InGaAsP/InP bottom mirror

Author

Rapp, S., Salomonsson, F., Bentell, J., Sagnes, I., Moussa, H., Mériadec, C., Raj, R., Streubel, K., Hammar, Mattias, Rapp, S., Salomonsson, F., Bentell, J., Sagnes, I., Moussa, H., Mériadec, C., Raj, R., Streubel, K., and Hammar, Mattias

Abstract

The first near room-temperature continuous-wave (CW) operation of a vertical cavity laser based on an epitaxial InGaAsP/InP bottom mirror is reported. The structure employs a package of nine strain compensated GaInAsP quantum wells and a wafer-fused GaAs/AlGaAs top mirror. For a 10 Όm diameter device, the threshold current is 6mA and the input threshold power is 21mW. The maximum operating temperature is 17 and 101°C for CW and pulsed conditions, respectively. © IEE 1999., References: Piprek, J., High-temperature lasing of long-wavelength VCSELs: Problems and prospects (1997) Proc. SPIE, 3003, pp. 182-193; Uchiyama, S., Yokouchi, Y., Ninomiya, T., Continuous-wave operation up to 36°C of 1.3-Όm GaInAsP-InP vertical cavity lasers (1997) IEEE Photonics Technol. Lett., 9 (2), pp. 141-142; Margalit, N.M., Piprek, J., Zhang, S., Babic, D.I., Streubel, K., Mirin, R.P., Wesselman, J.R., Hu, E.L., 64°C continuous wave operation of 1.5 Όm vertical-cavity laser (1997) IEEE J. Sci. Topics Quantum Electron., 3 (2), pp. 359-365; Jayaraman, V., Geske, J.C., MacDougal, M.H., Peters, F.H., Lowes, T.D., Char, T.T., Uniform threshold current, continuous-wave, singlemode 1300nm vertical cavity lasers from 0 to 70°C (1998) Electron. Lett., 34 (14), pp. 1405-1406; Ohiso, Y., Amano, C., Itoh, Y., Tateno, K., Tadokoro, Takenouchi, H., Kurokawa, T., 1.55 Όm vertical-cavity surface-emitting lasers with wafer fused InGaAsP/InP-GaAs/AlAs DBRs (1996) Electron. Lett., 32 (16), pp. 1483-1485; Qian, Y., Zhu, Z.H., Lo, Y.H., Hoffaker, D.L., Deppe, D.G., Ho, H.Q., Hammons, B.E., Tou, Y.K., Submilliamp 1.3Όm vertical-cavity lasers with threshold current density of < 500A/cm2 (1997) Electron. Lett., 33 (12), pp. 1052-1054; Salet, P., Gabriot, F., Pagnod-Rossaiux, P.H., Plais, A., Deroum, E., Pasquier, J., Jacquet, J., Room-temperature pulsed operation of 1.3Όm vertical-cavity lasers including bottom InGaAsP/InP multilayer Bragg mirrors (1997) Electron. Lett., 33 (24), pp. 1408-1409; Imayo, Y., Kasukawa, A., Kashwa, S., Okatomo, H., GaInAsP/ InP semiconductor multilayer reflector grown by metalorganic vapor phase deposition and its application to surface emitting laser diode (1990) Jpn. J. Appl. Phys., 29, pp. L1130-L1132; Fisher, M.A., Huag, Y.-Z., Dann, A.J., Elton, D.J., Harlow, M.J., Perrin, S.D., Reed, J., Adams, M.J., Pulsed electrrical operation of 1.5Όm vertical-cavity surface emitting lasers (1995) IEEE Photonics Technol. Lett., 29, pp. 608-610; R

Published
1999

33. Long wavelength vertical cavity lasers

Author

Streubel, K., Hammar, M., Salomonsson, F., Bentell, J., Mogg, S., Rapp, S., Jacquet, J., Boucart, J., Starck, C., Plais, A., Gaborit, F., Derouin, E., Bouche, N., Rudra, A., Syrbu, A. V., Streubel, K., Hammar, M., Salomonsson, F., Bentell, J., Mogg, S., Rapp, S., Jacquet, J., Boucart, J., Starck, C., Plais, A., Gaborit, F., Derouin, E., Bouche, N., Rudra, A., and Syrbu, A. V.

Abstract

We report on three novel vertical cavity laser (VCL) structures for 1.55 Όm operation. Two of the VCL structures utilize an n-type GaInAsP/InP Bragg mirror combined with an Al(Ga)As/GaAs mirror using either wafer-fusion or metamorphic epitaxial growth. The third VCL employs two wafer fused AlGaAs/GaAs mirrors, in which lateral current confinement is obtained by localized fusion of the p-mirror. All three VCLs use strained GaInAsP quantum wells as active material and achieve continuous-wave (CW) operation at room-temperature or above. The single fused VCL operates up to 17 °C and 101 °C in continuous-wave and pulsed mode, respectively. The monolithic VCL-structure with a metamorphic GaAs/AlAs n-type mirror uses a reversed biased tunnel junction for current injection. This laser achieves record high output power (1mW) at room temperature and operates CW up to 45 °C. The double fused VCLs with a 10×10 Όm2 active area operate CW up to 30 °C with threshold current as low as 2.5 mA and series resistance of 30 Ohms. The emission spectra exhibit a single lasing mode polarized with 30 dB extinction ratio and a spectral linewidth of 150 MHz., Sponsors: SPIE NR 20140805

Published
1999

34. Temperature-dependent performance of 1.55 ÎŒm vertical-cavity lasers with InGaAsP/InP bottom mirror

Author

Salomonsson, P., Mogg, S., Rapp, S., Bentell, J., Sagnes, I., Raj, R., Streubel, K., Hammar, M., Salomonsson, P., Mogg, S., Rapp, S., Bentell, J., Sagnes, I., Raj, R., Streubel, K., and Hammar, M.

Abstract

We have fabricated and evaluated a long-wavelength vertical-cavity laser (VCL) based on an epitaxially integrated InP distributed Bragg reflector (DBR) under continuous wave (CW) and pulsed conditions. We conclude that, for an InP-DBR-down configuration, the high-temperature performance is limited by the heat conductivity of the bottom mirror. The highest operating temperature for CW and pulsed condition is 17 °C and 101 °C respectively, indicating a substantial self-heating for CW. To investigate the prospect for improved performance in other mounting configurations, we have applied a two-dimensional finite element analysis to the heat transfer problem. It is suggested that for top-side-down mounting with the AlGaAs/GaAs DBR closest to the heat sink, a performance comparable to that of so called double-fused VCLs could be possible., Correspondence Address: Salomonsson, P.; Royal Inst of Technology, Kista, Sweden NR 20140805

Published
1999

42. Systematics of electrical conductivity across InP to GaAs wafer fused interfaces

Author

Hammar, M., Wennekes, F., Salomonsson, F., Bentell, J., Streubel, K., Rapp, S., Keiper, D., Westphalen, R., Hammar, M., Wennekes, F., Salomonsson, F., Bentell, J., Streubel, K., Rapp, S., Keiper, D., and Westphalen, R.

Abstract

We report on the electrical and compositional characterization of wafer fused isotype heterojunctions between Zn, C or Si doped GaAs and Zn or Si doped InP. The junctions were characterized with current-voltage and secondary ion mass spectrometry (SIMS) measurements. It is demonstrated that very low-resistive junctions can be obtained in each case, but also that there is a strong influence from the detailed sample structure and processing conditions. SIMS was used to monitor the doping concentration across the interface as well as the impurity concentration of oxygen, carbon and iron., Sponsors: IEEE NR 20140805

Published
1998

43. All epitaxial single-fused 1.55ÎŒm vertical cavity laser based on an InP Bragg reflector

Author

Rapp, S., Salomonsson, F., Streubel, K., Mogg, S., Wennekes, F., Bentell, J., Hammar, M., Rapp, S., Salomonsson, F., Streubel, K., Mogg, S., Wennekes, F., Bentell, J., and Hammar, M.

Abstract

We have realised all epitaxial 1.55Όm vertical cavity lasers by employing a single wafer-fusion step. The laser structure is fabricated by fusing a 32 period p-doped (C) AlGaAs/GaAs top mirror to a half cavity structure consisting of a 50 period n-doped (Si) GaInAsP/InP bottom mirror and 9QW GaInAsP-active material. Laser mesas are fabricated using a wet etching procedure for the top mirror. The top mirror also contains an AlAs layer for oxidation for current confinement. The lasers operate pulsed for temperatures up to 40°C and at pulse lengths of 10Όs up to 5°C. The minimum threshold current density at room temperature is 1.8kA/cm2 for a device diameter of 55Όm. Compared to non-oxidised laser diodes, the oxidation decreases the threshold currents significantly., Sponsors: IEEE NR 20140805

Published
1998

44. High speed modulation characteristics of long wavelength vertical cavity lasers based on an integrated InP Bragg reflector

Author

Stevens, Renaud, Rapp, S., Schatz, Richard, Goobar, E., Streubel, K., Karlsson, A., Stevens, Renaud, Rapp, S., Schatz, Richard, Goobar, E., Streubel, K., and Karlsson, A.

Abstract

The high-speed performance of 1.55 mu;m GaInAsP MQW vertical cavity lasers based on a 50-period GaInAsP-InP bottom mirror operating continuous-wave at low temperature is presented. The maximum small-signal modulation bandwidth was limited by parasitics to 3.4 GHz, NR 20140805

Published
1998
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