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17 results on '"Streque, Jeremy"'

1. Stoichiometric Lithium Niobate Crystals: Towards Identifiable Wireless Surface Acoustic Wave Sensors Operable up to 600$^\circ$C

Author

Streque, Jérémy, Aubert, Thierry, Kokanyan, Ninel, Bartoli, Florian, Taguett, Amine, Polewczyk, Vincent, Kokanyan, Edvard, Hage-Ali, Sami, Boulet, Pascal, and Elmazria, Omar

Subjects
Physics - Applied Physics, Condensed Matter - Materials Science, Physics - Classical Physics
Abstract

Wireless surface acoustic wave (SAW) sensors constitute a promising solution to some unsolved industrial sensing issues taking place at high temperatures. Currently, this technology enables wireless measurements up to 600-700$^\circ$C at best. However, the applicability of such sensors remains incomplete since they do not allow identification above 400$^\circ$C. The latter would require the use of a piezoelectric substrate providing a large electromechanical coupling coefficient K 2 , while being stable at high temperature. In this letter, we investigate the potentiality of stoichiometric lithium niobate (sLN) crystals for such purpose. Raman spectroscopy and X-ray diffraction attest that sLN crystals withstand high temperatures up to 800$^\circ$C, at least for several days. In situ measurements of sLN-based SAW resonators conducted up to 600$^\circ$C show that the K 2 of these crystals remains high and stable throughout the whole experiment, which is very promising for the future achievement of identifiable wireless high-temperature SAW sensors.

Published
2019
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3. Control Strategies and Performance of a Magnetically Actuated Tactile Micro-actuator Array

Author

Streque, Jérémy, Talbi, Abdelkrim, Pernod, Philippe, Preobrazhensky, Vladimir, Hutchison, David, Series editor, Kanade, Takeo, Series editor, Kittler, Josef, Series editor, Kleinberg, Jon M., Series editor, Mattern, Friedemann, Series editor, Mitchell, John C., Series editor, Naor, Moni, Series editor, Nierstrasz, Oscar, Series editor, Pandu Rangan, C., Series editor, Steffen, Bernhard, Series editor, Sudan, Madhu, Series editor, Terzopoulos, Demetri, Series editor, Tygar, Doug, Series editor, Vardi, Moshe Y., Series editor, Weikum, Gerhard, Series editor, Kappers, Astrid M. L., editor, van Erp, Jan B. F., editor, Bergmann Tiest, Wouter M., editor, and van der Helm, Frans C. T., editor

Published
2010
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4. Electromagnetic Actuation Based on MEMS Technology for Tactile Display

Author

Streque, Jeremy, Talbi, Abdelkrim, Pernod, Philippe, Preobrazhensky, Vladimir, Hutchison, David, editor, Kanade, Takeo, editor, Kittler, Josef, editor, Kleinberg, Jon M., editor, Mattern, Friedemann, editor, Mitchell, John C., editor, Naor, Moni, editor, Nierstrasz, Oscar, editor, Pandu Rangan, C., editor, Steffen, Bernhard, editor, Sudan, Madhu, editor, Terzopoulos, Demetri, editor, Tygar, Doug, editor, Vardi, Moshe Y., editor, Weikum, Gerhard, editor, and Ferre, Manuel, editor

Published
2008
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8. Model of Ni-63 battery with realistic PIN structure.

Author

Munson IV, Charles E., Arif, Muhammad, Streque, Jeremy, Belahsene, Sofiane, Martinez, Anthony, Ramdane, Abderrahim, El Gmili, Youssef, Salvestrini, Jean-Paul, Voss, Paul L., and Ougazzaden, Abdallah

Subjects
ELECTRON-hole droplets, ELECTRIC batteries, ENERGY development, SCANNING electron microscopes, RADIOACTIVE substances
Abstract

GaN, with its wide bandgap of 3.4 eV, has emerged as an efficient material for designing high-efficiency betavoltaic batteries. An important part of designing efficient betavoltaic batteries involves a good understanding of the full process, from the behavior of the nuclear material and the creation of electron-hole pairs all the way through the collection of photo-generated carriers. This paper presents a detailed model based on Monte Carlo and Silvaco for a GaN-based betavoltaic battery device, modeled after Ni-63 as an energy source. The accuracy of the model is verified by comparing it with experimental values obtained for a GaN-based p-i-n structure under scanning electron microscope illumination. [ABSTRACT FROM AUTHOR]

Published
2015
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14. High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices

Author

Sundaram, Suresh, primary, Puybaret, Renaud, additional, Li, Xin, additional, El Gmili, Youssef, additional, Streque, Jeremy, additional, Panztas, Konstantinos, additional, Orsal, Gaelle, additional, Patriarche, Gilles, additional, Voss, Paul L., additional, Salvestrini, Jean Paul, additional, and Ougazzaden, Abdallah, additional

Published
2015
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16. Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT.

Author

Bishop, Chris, Halfaya, Yacine, Soltani, Ali, Sundaram, Suresh, Li, Xin, Streque, Jeremy, El Gmili, Youssef, Voss, Paul L., Salvestrini, Jean Paul, and Ougazzaden, Abdallah

Abstract

We report an AlGaN/GaN HEMT gas sensor designed to enable NO, NO2, and NH3 detection from 100 °C–400 °C over a large concentration range. Device modeling is performed to optimize several HEMT device parameters for sensing, and the experimental results show that the optimized sensor has improved performance compared with the previously reported HEMT sensors. The device shows significant no sensitivity for the first time in an HEMT device, with sensitivity up to 7% at 400 °C. In addition, high sensitivities of up to 17% are reported for NO2, and NH3 is detected at concentrations as low as 150 ppb. [ABSTRACT FROM PUBLISHER]

Published
2016
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