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1. GaSb-based 2.X µm quantum-well diode lasers with low beam divergence and high output power

Author

Rattunde, M., Schmitz, J., Kaufel, G., Kelemen, M.T., Weber, J., Wagner, J., and Publica

Subjects
GaSb, fast axis, Infrarot-Laser, GaInAsSb, high power laser, M2, beam quality, Strahldivergenz, beam divergence, diode laser, infrared laser, AlGaAsSb, beam width, Strahlbreite, Leistungslaser, Beugungsmaßzahl, Diodenlaser
Abstract

We report on GaSb-based 2.X µm diode lasers with an improved waveguide design, leading to a reduced beam divergence in the fast axis of 44° full width at half maximum (FWHM), compared to 67° FWHM of a conventional broadened waveguide design. 2.3 µm ridge-waveguide lasers with the improved epitaxial design showed, besides the narrow beam profile in the fast axis, an excellent slow axis beam quality [M(exp 2)

Published
2006

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