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This study reassesses an overview of the potential of the radio frequency (RF)-based state diagnostics of three-way catalysts (TWC) based on a previous study with an emphasis on the defect chemistry of the catalyst material during reoxidation and reduction. Some data are based on the previous works but are newly processed, and the signal parameters resonant frequency and inverse quality factor are evaluated with respect to applicability. The RF-based method uses electromagnetic resonances in a cavity resonator to provide information on the storage level of the oxygen storage component. The analysis focuses on a holistic investigation and evaluation of the major effects influencing the RF signal during operation. On the one hand, the response to the oxygen storage behavior and the resolution of the measurement method are considered. Therefore, this study merges original data from multiple former publications to provide a comprehensive insight into important measurement effects and their defect chemistry background. On the other hand, the most important cross-sensitivities are discussed and their impact during operation is evaluated. Additionally, the effect of catalyst aging is analyzed. The effects are presented separately for the two resonant parameters: resonant frequency and (unloaded) quality factor. Overall, the data suggest that the quality factor has a way higher signal quality at low temperatures (<400 °C) and the resonant frequency is primarily suitable for high operating temperatures. At most operating points, the quality factor is even more robust against interferences such as exhaust gas stoichiometry and water content. Correctly estimating the catalyst temperature is the most important factor for reliable results, which can be achieved by combining the information of both resonant signals. In the end, the data indicate that microwave-based state diagnosis is a powerful system for evaluating the oxygen storage level over the entire operating range of a TWC. As a research tool and in its application, the system can therefore contribute to the improvement of the emission control of future gasoline vehicles. [ABSTRACT FROM AUTHOR]

Due to increasingly stringent limits for NOx emissions, there is now more interest than ever in cost-effective, precise, and durable exhaust gas sensor technology for combustion processes. This study presents a novel multi-gas sensor with resistive sensing principles for the determination of oxygen stoichiometry and NOx concentration in the exhaust gas of a diesel engine (OM 651). A screen-printed porous KMnO4/La-Al2O3 film is used as the NOx sensitive film, while a dense ceramic BFAT (BaFe0.74Ta0.25Al0.01O3–δ) film prepared by the PAD method is used for λ-measurement in real exhaust gas. The latter is also used to correct the O2 cross-sensitivity of the NOx sensitive film. This study presents results under dynamic conditions during an NEDC (new European driving cycle) based on a prior characterization of the sensor films in an isolated sensor chamber with static engine operation. The low-cost sensor is analyzed in a wide operation field and its potential for real exhaust gas applications is evaluated. The results are promising and, all in all, comparable with established, but usually more expensive, exhaust gas sensors. [ABSTRACT FROM AUTHOR]

In this microwave study, the defect chemistry of ceria–zirconia solid solutions (CZO, Ce1−yZryO2−δ) was investigated at high temperatures by a resonant microwave method. Specifically, the effects of temperature and Zr content on the dielectric properties and defect chemistry mechanisms in CZO were analyzed. Experiments were performed on a series of different CZO powders (y = 0.2, 0.33, 0.50, 0.67). Measurements at 600°C and different oxygen partial pressures (pO2 = 10−26–0.2 bar) confirm a dominant n‐type conduction of small‐polarons in CZO due to the preferred formation of oxygen vacancies, which is also supported by a multimodal analysis. Polarization losses were found to be negligible in the GHz range. Furthermore, an increased relative permittivity was observed in CZO, which correlates with the concentration of oxygen vacancies in CZO. Our microwave study is the first to provide a comprehensive data set for the dielectric properties of CZO powder sample in a wide range of different conditions. In addition, the connection of dielectric properties to CZO defect chemistry mechanisms is presented. The results are in good agreement with findings in the literature and may contribute to a better understanding of microwave‐based state diagnosis of CZO‐based materials, as it discussed for three‐way catalysts. [ABSTRACT FROM AUTHOR]

The chemical expansion of ceria (CeO2−δ) and ceria-zirconia (Ce0.8Zr0.2O2−δ, CZO80) thin films is investigated by high-temperature laser Doppler vibrometry (LDV) at temperatures from 600 to 950 °C. The films are deposited on single-crystalline 8 mol-% yttria-stabilized zirconia substrates, which act as pumping cells to adjust oxygen non-stoichiometry in the thin films. Oxygen deficiency causes film expansion, leading to mechanical strain that bends the sample. The total displacement, i.e., the sum of bending and film-thickness change, is determined contact-less by LDV. A differential laser Doppler vibrometer (D-LDV) is realized to enable measurements on a very long time scale, which is necessary due to the long equilibrium times of the ceramic films. These displacements are compared to those acquired with a commercial single-point laser Doppler vibrometer (SP-LDV) for motions above 1 Hz. Here, both devices yield similar results. CZO80 films are found to bend a substrate much more than ceria films under similar experimental conditions. A model describing the displacement of the sample is derived from the Stoney model and applied to calculate deflections using literature data. The displacements at the center of the CZO80 sample measured with the SP-LDV increase from 0.18 nm at 10 Hz and 600 °C to 32.7 nm at 0.1 Hz and 800 °C. For ceria, the displacements range from 1.6 nm (10 Hz, 800 °C) to 79.4 nm (0.1 Hz, 900 °C). The D-LDV enables the detection of quasi-static displacements at very low frequencies. The ceria sample exhibits 218 nm at 0.001 Hz and 800 °C. [ABSTRACT FROM AUTHOR]

The chemical expansion of Pr0.1Ce0.9O2–δ (PCO) and CeO2–δ thin films is investigated in the temperature range between 600 °C and 800 °C by laser Doppler vibrometry (LDV). It enables non-contact determination of nanometer scale changes in film thickness at high temperatures. The present study is the first systematic and detailed investigation of chemical expansion of doped and undoped ceria thin films at temperatures above 650 °C. The thin films were deposited on yttria stabilized zirconia substrates (YSZ), operated as an electrochemical oxygen pump, to periodically adjust the oxygen activity in the films, leading to reversible expansion and contraction of the film. This further leads to stresses in the underlying YSZ substrates, accompanied by bending of the overall devices. Film thickness changes and sample bending are found to reach up to 10 and several hundred nanometers, respectively, at excitation frequencies from 0.1 to 10 Hz and applied voltages from 0–0.75 V for PCO and 0–1 V for ceria. At low frequencies, equilibrium conditions are approached. As a consequence maximum thin-film expansion of PCO is expected due to full reduction of the Pr ions. The lower detection limit for displacements is found to be in the subnanometer range. At 800 °C and an excitation frequency of 1 Hz, the LDV shows a remarkable resolution of 0.3 nm which allows, for example, the characterization of materials with small levels of expansion, such as undoped ceria at high oxygen partial pressure. As the correlation between film expansion and sample bending is obtained through this study, a dimensional change of a free body consisting of the same material can be calculated using the high resolution characteristics of this system. A minimum detectable dimensional change of 5 pm is estimated even under challenging high-temperature conditions at 800 °C opening up opportunities to investigate electro-chemo-mechanical phenomena heretofore impossible to investigate. The expansion data are correlated with previous results on the oxygen nonstoichiometry of PCO thin films, and a defect model for bulk ceria solid solutions is adopted to calculate the cation and anion radii changes in the constrained films during chemical expansion. The constrained films exhibit anisotropic volume expansion with displacements perpendicular to the substrate plane nearly double that of bulk samples. The PCO films used here generate high total displacements of several 100 nm's with high reproducibility. Consequently, PCO films are identified to be a potential core component of high-temperature actuators. They benefit not only from high displacements at temperatures where most piezoelectric materials no longer operate while exhibiting, low voltage operation and low energy consumption. [ABSTRACT FROM AUTHOR]

Featuring high levels of achievable oxygen non-stoichiometry δ, Ce1−xZrxO2−δ solid solutions (CZO) are crucial for application as oxygen storage materials in, for example, automotive three-way catalytic converters (TWC). The use of CZO in form of films combined with simple manufacturing methods is beneficial in view of device miniaturization and reducing of TWC manufacturing costs. In this study, a comparative microstructural and electrochemical characterization of film and conventional bulk CZO is performed using X-ray diffractometry, scanning electron microscopy, and impedance spectroscopy. The films were composed of grains with dimensions of 100 nm or less, and the bulk samples had about 1 µm large grains. The electrical behavior of nanostructured films and coarse-grained bulk CZO (x > 0) was qualitatively similar at high temperatures and under reducing atmospheres. This is explained by dominating effect of Zr addition, which masks microstructural effects on electrical conductivity, enhances the reducibility, and favors strongly electronic conductivity of CZO at temperatures even 200 K lower than those for pure ceria. The nanostructured CeO2 films had much higher electrical conductivity with different trends in dependence on temperature and reducing atmospheres than their bulk counterparts. For the latter, the conductivity was dominantly electronic, and microstructural effects were significant at T < 700 °C. Nanostructural peculiarities of CeO2 films are assumed to induce their more pronounced ionic conduction at medium oxygen partial pressures and relatively low temperatures. The defect interactions in bulk and film CZO under reducing conditions are discussed in the framework of conventional defect models for ceria. [ABSTRACT FROM AUTHOR]

Bulk ceria-zirconia solid solutions (Ce1−xZrxO2−δ, CZO) are highly suited for application as oxygen storage materials in automotive three-way catalytic converters (TWC) due to the high levels of achievable oxygen non-stoichiometry δ. In thin film CZO, the oxygen storage properties are expected to be further enhanced. The present study addresses this aspect. CZO thin films with 0 ≤ x ≤ 1 were investigated. A unique nano-thermogravimetric method for thin films that is based on the resonant nanobalance approach for high-temperature characterization of oxygen non-stoichiometry in CZO was implemented. The high-temperature electrical conductivity and the non-stoichiometry δ of CZO were measured under oxygen partial pressures pO2 in the range of 10−24–0.2 bar. Markedly enhanced reducibility and electronic conductivity of CeO2-ZrO2 as compared to CeO2−δ and ZrO2 were observed. A comparison of temperature- and pO2-dependences of the non-stoichiometry of thin films with literature data for bulk Ce1−xZrxO2−δ shows enhanced reducibility in the former. The maximum conductivity was found for Ce0.8Zr0.2O2−δ, whereas Ce0.5Zr0.5O2-δ showed the highest non-stoichiometry, yielding δ = 0.16 at 900 °C and pO2 of 10−14 bar. The defect interactions in Ce1−xZrxO2−δ are analyzed in the framework of defect models for ceria and zirconia. [ABSTRACT FROM AUTHOR]