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1. Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits

2. Nanoprobing of Advanced Silicon-On-Insulator Transistors

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3. Spin-Conserving Resonant Tunneling in Twist-Controlled WSe

4. Large effective mass and interaction-enhanced Zeeman splitting of K -valley electrons in MoSe2

5. Tunable Γ−K Valley Populations in Hole-Doped Trilayer WSe2

6. Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation

7. Band Alignment in WSe2–Graphene Heterostructures

8. Tunable Γ-K Valley Populations in Hole-Doped Trilayer WSe_{2}

9. Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures

10. Reconfigurable Complementary Monolayer MoTe

11. Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene

12. Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe_{2}

13. Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

14. Correction to van der Waals Heterostructures with High Accuracy Rotational Alignment

15. Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and BilayerWSe2: Landau Level Degeneracy, Effective Mass, and Negative Compressibility

16. van der Waals Heterostructures with High Accuracy Rotational Alignment

17. Filament diffusion model for simulating reset and retention processes in RRAM

18. (Invited) Resonant Interlayer Tunneling in 2D Van Der Waals-Materials-Based Channel-Dielectric-Channel Systems and Possible Device and Circuit Applications

19. Band offset and negative compressibility in graphene-MoS2 heterostructures

20. Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures

21. Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

22. Nanosession: Valence Change Memories - Redox Mechanism and Modelling

23. Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament

24. Atomistic simulation of the electronic states of adatoms in monolayer MoS2

25. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

26. Physical modeling of voltage-driven resistive switching in oxide RRAM

28. Bipolar-Switching Model of RRAM by Field- and Temperature-Activated Ion Migration

29. Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

30. Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling