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© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works., Si 3 N 4 -based ReRAM devices showcase intriguing performance characteristics of low switching threshold, high endurance and retention that lay the foundations for the development of the next-generation low-power artificial synaptic devices. In this work, an approach to accurately simulate resistive-switching of Si 3 N 4 memristors by employing the Kinetic Monte Carlo simulation method is outlined. The Kinetic Monte Carlo (KMC) method is used to simulate the temporal dynamics of the conductive filament (CF) formation and recession during voltage sweeps on the devices under simulation. The CF is modeled as nitrogen vacancies which act as electron transfer sites, consistent with experimental data showing conductivity in Si 3 N 4 films having high nitrogen vacancy concentrations. This simulation approach allows for direct visualization of the CF electrostatics as well as the incorporation of a non-local, trap-assisted tunneling model to approximate current-voltage characteristics during the switching event., The present work was supported by the research project “3D Transceiver integration technologies for antenna array phase-shifting systems (3DTOPOS)” (MIS 5131411), which is funded by the National Strategic Reference Framework (NSRF) Operational Program 2014-2020., Peer Reviewed, Objectius de Desenvolupament Sostenible::9 - Indústria, Innovació i Infraestructura, Objectius de Desenvolupament Sostenible::8 - Treball Decent i Creixement Econòmic, Postprint (published version)

© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works., Nanotechnology-enabled novel RF switches have emerged as a promising alternative to MEMS, owing to current technological limitations of the latter. Additionally, recent research endeavors in the telecommunications sector have aimed on the gradual replacement of MEMS with memristive switches harnessing the unique properties of memristors. Such switches have been recently fabricated and characterized, providing optimal behavior under high-frequency stimuli. In this study, a novel double-pole double-throw (DPDT) memristor-based switch is proposed, that can be also utilized as a differential single-pole double-throw (SPDT) switch for use in RF applications. Memristor elements are incorporated into the circuit design, providing a more area-, power-, and cost-efficient approach. The designed circuits utilize a widely employed memristor model and are properly matched for 50O loads. The performance of the three circuit variants is evaluated using various key figures of merit, and the selected topology is further assessed under noisy input stimuli. Through this work, we aim to contribute to the ongoing discussion on the application of memristor-based switches in RF circuits, highlighting their potential advantages and addressing the need for more efficient and reliable alternatives., The present work was supported by the research project “3D Transceiver integration technologies for antenna array phase-shifting systems (3DTOPOS)” (MIS 5131411), which is funded by the National Strategic Reference Framework (NSRF) Operational Program 2014-2020., Peer Reviewed, Objectius de Desenvolupament Sostenible::9 - Indústria, Innovació i Infraestructura, Objectius de Desenvolupament Sostenible::11 - Ciutats i Comunitats Sostenibles, Objectius de Desenvolupament Sostenible::8 - Treball Decent i Creixement Econòmic, Postprint (published version)

The enticing properties of memristors have been exploited for the design of novel circuits with great prospects, owing to the visible challenges posed by CMOS technology. Similarly, research efforts in the field of RF engineering over the last few years have focused on replacing MEMS with memristive switches. These switches have been recently investigated, fabricated, and characterized, demonstrating promising operational characteristics under high-frequency stimuli. In this work, a widely employed memristor model has been used to accurately fit the physical characteristics of the devices under investigation, including geometry and material composition. Subsequently, three common circuit topologies are adopted, studied, and simulated to extract the S-Parameters of the memristor-based switches matched to 50O load terminations. Our findings ensure sufficient functionality of the examined memristor-based switches up to F MAX =50GHz and suggest promising perspectives, slightly exceeding the projected results in previous studies found in the literature. Finally, a method for further enhancing the proposed circuit, in terms of increasing the power handling capability of the designed switches, is also proposed., The present work was supported by the research project “3D Transceiver integration technologies for antenna array phase-shifting systems (3D-TOPOS)” (MIS 5131411), which is funded by the National Strategic Reference Framework (NSRF) Operational Program 2014-2020., Peer Reviewed, Objectius de Desenvolupament Sostenible::9 - Indústria, Innovació i Infraestructura, Postprint (published version)