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AB-stacked bilayer graphene has emerged as a fascinating yet simple platform for exploring macroscopic quantum phenomena of correlated electrons. Unexpectedly, a phase with negative dR/dT has recently been observed when a large electric displacement field is applied and the charge carrier density is tuned to the vicinity of an ultra-low-density van Hove singularity. This phase exhibits features consistent with Wigner crystallization, including a characteristic temperature dependence and non-linear current bias behavior. However, more direct evidence for the emergence of an electron crystal in AB-stacked bilayer graphene at zero magnetic field remains elusive. Here we explore the low-frequency noise consistent with depinning and sliding of a Wigner crystal lattice. The current bias and frequency dependence of these noise spectra align well with findings from previous experimental and theoretical studies on the quantum electron solids. Our results offer transport signatures consistent with Wigner crystallization in AB-stacked bilayer graphene at zero and finite magnetic fields, paving the way for further substantiating an anomalous Hall crystal in its original form.

Controlling the bandstructure of Dirac materials is of wide interest in current research but has remained an outstanding challenge for systems such as monolayer graphene. In contrast, Bernal bilayer graphene (BLG) offers a highly flexible platform for tuning the bandstructure, featuring two distinct regimes. In one regime, which is well established and widely used, a tunable bandgap is induced by a large enough transverse displacement field. Another is a gapless metallic band occurring near charge neutrality and at not too strong fields, featuring rich 'fine structure' consisting of four linearly-dispersing Dirac cones with opposite chiralities in each valley and van Hove singularities. Even though BLG was extensively studied experimentally in the last two decades, the evidence of this exotic bandstructure is still elusive, likely due to insufficient energy resolution. Here, rather than probing the bandstructure by direct spectroscopy, we use Landau levels as markers of the energy dispersion and carefully analyze the Landau level spectrum in a regime where the cyclotron orbits of electrons or holes in momentum space are small enough to resolve the distinct mini Dirac cones. We identify the presence of four distinct Dirac cones and map out complex topological transitions induced by electric displacement field. These findings introduce a valuable addition to the toolkit for graphene electronics.

Bernal bilayer graphene has recently been discovered to exhibit a wide range of unique ordered phases resulting from interaction-driven effects and encompassing spin and valley magnetism, correlated insulators, correlated metals, and superconductivity. This letter reports on a novel family of correlated phases characterized by spin and valley ordering, observed in electron-doped bilayer graphene. The novel correlated phases demonstrate an intriguing non-linear current-bias behavior at ultralow currents that is sensitive to the onset of the phases and is accompanied by an insulating temperature dependence, providing strong evidence for the presence of unconventional charge carrying degrees of freedom originating from ordering. These characteristics cannot be solely attributed to any of the previously reported phases, and are qualitatively different from the behavior seen previously on the hole-doped side. Instead, our observations align with the presence of charge- or spin-density-waves state that open a gap on a portion of the Fermi surface or fully gapped Wigner crystals. The resulting new phases, quasi-insulators in which part of the Fermi surface remains intact or valley-polarized and valley-unpolarized Wigner crystals, coexist with previously known Stoner phases, resulting in an exceptionally intricate phase diagram.

Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge trapping by the Coulomb potentials of the dopant counter-ions. Here, we present a combined experimental and theoretical study rebutting this belief. Using a newly developed doping technique, we find the conductivity of several classes of high-mobility conjugated polymers to be strongly correlated with paracrystalline disorder but poorly correlated with ionic size, suggesting that Coulomb traps do not limit transport. A general model for interacting electrons in highly doped polymers is proposed and carefully parameterized against atomistic calculations, enabling the calculation of electrical conductivity within the framework of transient localisation theory. Theoretical calculations are in excellent agreement with experimental data, providing insights into the disordered-limited nature of charge transport and suggesting new strategies to further improve conductivities.