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142 results on '"Stanley, R.P."'

1. Experimental determination of the internal quantum efficiency of AlGalnP microcavity light-emitting diodes

Author

Royo, P., Stanley, R.P., Illegems, M., Streubel, K., and Gulden, K.H.

Subjects
Indium -- Optical properties, Gallium -- Optical properties, Aluminum -- Optical properties, Quantum chemistry -- Research, Light-emitting diodes -- Research, Chemistry
Abstract

The external quantum efficiency of AlGaInP-based microcavity light-emitting diodes (MCLEDs) was measured. This allowed exact calculation of the extraction efficiency for both MCLED and LED.

Published
2002

3. List of contributors

Author

Accomo, R., primary, Achtziger, N., additional, Adams, S.J.A., additional, Akasaki, I., additional, Albert, J.P., additional, Amano, H., additional, André, R., additional, Antonelli, A., additional, Asif Khan, M., additional, Aulombard, R.L., additional, Austin, R.F., additional, Balestrino, G., additional, Baltramiejūnas, R., additional, Bechstedt, F., additional, Bécourt, N., additional, Bergman, L., additional, Bernholc, J., additional, Bertho, D., additional, Bertoni, CM., additional, Billat, S., additional, Boćkowski, M., additional, Bodin, C., additional, Bodin-Deshayes, C., additional, Boiko, E.B., additional, Boring, P., additional, Bouhelal, A., additional, Bratina, G., additional, Brennan, K.F., additional, Briddon, P.R., additional, Briot, O., additional, Broser, I., additional, Bsiesy, A., additional, Bucher, E., additional, Burchard, A., additional, Cantwell, G., additional, Carter, C.H., additional, Castro, T., additional, Cavenett, B.C., additional, Chadi, D.J., additional, Chen, K.M., additional, Chen, X., additional, Cheng, H., additional, Choyke, W.J., additional, Christensen, N.E., additional, Cibert, J., additional, Cingolani, R., additional, Cloitre, T., additional, Cohen, P.I., additional, Collins, A.T., additional, Cotal, H.L., additional, Cricenti, A., additional, Dabbicco, M., additional, Dang, L.S., additional, Davis, R.F., additional, Deicher, M., additional, DePuydt, J.M., additional, Dischler, B., additional, Dmitriev, V.A., additional, Donegan, J.F., additional, Doran, J.P., additional, Dubowski, J.J., additional, Eckey, L., additional, Edmond, J.A., additional, Efros, A.L., additional, Egan, R.J., additional, Engelbrecht, F., additional, Evstropov, W., additional, Fanciulli, M., additional, Feldman, R.D., additional, Felici, A.C., additional, Ferrara, M., additional, Ferrari, L., additional, Ferry, D.K., additional, Feuillet, G., additional, Fiedler, M., additional, Finocchi, F., additional, Fischer, R., additional, Fishman, G., additional, Franciosi, A., additional, Fricke, Ch., additional, Frolov, S.I., additional, Fuchs, D., additional, Galli, G., additional, Gaponenko, S.V., additional, Gaspard, F., additional, Gavrilenko, V.I., additional, Gavryushin, V., additional, Gebhardt, W., additional, Germanenko, I.N., additional, Geurts, J., additional, Geyzers, K.P., additional, Gil, B., additional, Gladfelter, W., additional, Gleitsman, G., additional, Göbel, E.O., additional, Godet, C., additional, Goede, O., additional, Gorczyca, I., additional, Gribkovskii, V.P., additional, Grzegory, I., additional, Gumlich, H.-E., additional, Gunshor, R.L., additional, Gurskii, A.L., additional, Gutowski, J., additional, Gygi, F., additional, Haase, M.A., additional, Haberstroh, C, additional, Harsch, W.C., additional, Hauksson, I., additional, Hayashi, S., additional, Hegarty, J., additional, Heimbrodt, W., additional, Heime, K., additional, Heine, V., additional, Heitz, R., additional, Helbig, R., additional, Henderson, B., additional, Henneberger, F., additional, Hérino, R., additional, Hermans, J., additional, Heuken, M., additional, Hoffmann, A., additional, Hoffmann, H., additional, Hoffmann, N., additional, Hofsäss, H., additional, Humphreys, T.P., additional, Hunt, R.W., additional, Iarlori, S., additional, Iida, S., additional, Ikoma, K., additional, Itie, J.P., additional, Jacobs, K., additional, Jahn, S.G., additional, Jancu, J.M., additional, Jaussaud, C., additional, Jentzsch, T., additional, Johnson, R.L., additional, Jones, R., additional, Jouanin, C., additional, Jouneau, P.H., additional, Jun, J., additional, Jungnickel, V., additional, Juodžbalis, D., additional, Kajihara, S.A., additional, Kanicki, J., additional, Karmann, S., additional, Katayama-Yoshida, H., additional, Kawakami, Y., additional, Kazlauskas, A., additional, Kean, A., additional, Khan, M.R.H., additional, King-Smith, R.D., additional, Kinto, H., additional, Kißmann, U., additional, Klimakow, A., additional, Klyui, N.I., additional, Koide, N., additional, Koidl, P., additional, Kong, H.-S., additional, Kong, H.S., additional, König, Th., additional, Kono, J., additional, Kononenko, V.K., additional, Kotaki, M., additional, Kreß, C., additional, Krings, T., additional, Krukowski, St., additional, Kubertavicius, V., additional, Kudlek, G.H., additional, Kuhn, W., additional, Kunc, K., additional, Kuroda, Y., additional, Kuznia, J.N., additional, Kwak, K.W., additional, Labrunie, G., additional, Laks, D.B., additional, Lambrecht, W.R.L., additional, Lankes, S., additional, Lebed, V. Yu., additional, Lei, T., additional, Leibenzeder, S., additional, Lepore, M., additional, Licht, T., additional, Ligeon, M., additional, Linkov, I. Yu., additional, Litwin-Staszewska, E., additional, Logothetidis, S., additional, Luce, G., additional, Lutsenko, E.V., additional, Lux-Steiner, M. Ch., additional, Madéore, F., additional, Magerle, R., additional, Mahnke, H.-E., additional, Maier, K., additional, Malinovskii, I.E., additional, Manabe, K., additional, Marinelli, M., additional, Markey, B.G., additional, Markwitz, A., additional, Marshall, T., additional, Mathieu, H., additional, Matsunami, H., additional, McCaldin, J.O., additional, McGill, T.C., additional, McKeever, S.W.S., additional, Meier, J., additional, Mihalcescu, I., additional, Milani, E., additional, Mitcovets, A.I., additional, Mitsuyu, T., additional, Miura, N., additional, Molnar, R.J., additional, Molva, E., additional, Morohashi, M., additional, Morozenko, Ya.V., additional, Moustakas, T.D., additional, Mujica, A., additional, Mula, G., additional, Muller, F., additional, Müller-Sebert, W., additional, Muñoz, A., additional, Mura, A., additional, Naumov, A., additional, Needs, R.J., additional, Nemanich, R.J., additional, Nicolini, R., additional, Nurmikko, A.V, additional, O'Donnell, K.P., additional, Oguchi, T., additional, Ohkawa, K., additional, Okamoto, S., additional, Okazaki, N., additional, Okumura, H., additional, Osman, M.A., additional, Palmour, J.W., additional, Paloura, E.C., additional, Palummo, M., additional, Paoletti, A., additional, Papon, A.M., additional, Paroli, P., additional, Parrinello, M., additional, Pensl, G., additional, Pereira, E., additional, Perlin, P., additional, Petalas, J., additional, Pfeiffer, W., additional, Phillips, M.C., additional, Pikus, F.G, additional, Pinter, I., additional, Pirzer, M., additional, Pohl, U., additional, Pohl, U.W., additional, Polatoglou, H.M., additional, Polian, A., additional, Polini, R., additional, Ponga, B.E., additional, Ponthenier, J.L., additional, Porowski, S., additional, Prins, J.F., additional, Prior, K.A., additional, Puls, J., additional, Qiu, J., additional, Qteish, A., additional, Raciukaitis, G., additional, Reining, L., additional, Reisinger, T., additional, Restle, M., additional, Righini, M., additional, Rodríguez-Hernández, P., additional, Rolfe, S.J., additional, Romestain, R., additional, Ryzhikov, VD., additional, Sailer, B., additional, Sander, D., additional, Santos, L., additional, Sasaki, T., additional, Sawada, M., additional, Scamarcio, G., additional, Scarselli, M.A., additional, Schadt, M., additional, Schneider, A., additional, Schneider, J., additional, Schöner, A., additional, Schülzgen, A., additional, Selci, S., additional, Shinohara, M., additional, Simpson, J., additional, Sorba, L., additional, Spellmeyer, B., additional, Stanley, R.P., additional, Stanzl, H., additional, Stein, R.A., additional, Stewart, H., additional, Suemune, I., additional, Sulzer, G., additional, Suski, T., additional, Suttrop, W., additional, Swenberg, J.F., additional, Taghizadeh, M.R., additional, Takeyama, S., additional, Tansley, T.L., additional, Tebano, A., additional, Thurian, P., additional, Tosatti, E., additional, Trager-Cowan, C., additional, Troullier, N., additional, Tschentscher, I., additional, Tsuboi, N., additional, Tsujimura, A., additional, Tsukioka, K., additional, Tupenevich, P.A., additional, Turner, K.F., additional, Uchiki, H., additional, Uhrmacher, M., additional, Ullrich, B., additional, Uttamchandani, D., additional, Van de Walle, C.G., additional, van der Weide, J., additional, Van Hove, J.M., additional, Vanderbilt, D., additional, Vanzetti, L., additional, Vasileska, D., additional, Vial, J.C., additional, Wagner, H.P., additional, Wahl, U., additional, Waldmann, H., additional, Walker, CT., additional, Wang, E.G., additional, Wang, M.W., additional, Wang, S.Y., additional, Wang, Y., additional, Weinhold, V., additional, Wiehert, T., additional, Wild, C., additional, Witthuhn, W., additional, Wolf, H., additional, Wolf, K., additional, Wörz, M., additional, Yablonskii, G.P., additional, Yagi, M., additional, Yamaga, S., additional, Yamanaka, M., additional, Yang, F., additional, Yoshii, S., additional, Yoshikawa, A., additional, Yu, X., additional, Zeitz, W., additional, and Zimin, L.G., additional

Published
1993
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5. Device simultaneous determination of the source and cavity parameters of a microcavity light-emitting diode

Author

Ochoa, D., Houdre, R., Stanley, R.P., Dili, C., Oesterle, U., and Ilegems, M.

Subjects
Light-emitting diodes -- Research, Physics
Abstract

A technique for the simultaneous measurement of the detuning and the linewidth of the source emitter on the microcavity light-emitting diode (MCLED) was described. The method used numerical simulations and a fitting procedure with the angular emission pattern measured on the MCLED. It was shown that the efficiency of a MCLED is directly related to its detuning. The efficiency was peaked at an optimum detuning and decreased rapidly from this value.

Published
1999

8. Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 micrometer applications

Author

Chen, J.X., Markus, A., Fiore, A., Oesterle, U., Stanley, R.P., Ratajczak, J., Katcki, J., Catalano, M., Cingolani, R., Piscopiello, E., Todaro, M.T., Nasi, L., Lazzarini, L., Houdre, R., and Carlin, J.F.

Subjects
Epitaxy -- Research, Indium -- Research, Indium -- Optical properties, Gallium arsenide -- Research, Gallium arsenide -- Optical properties, Physics
Abstract

A systematic study of the effect of growth parameters on the structural and optical properties in InAs quantum dot (QD) grown under Stranski-Krastanov mode by molecular beam epitaxy is presented. The dot is significantly reduced as the growth rate decreases while the island size becomes larger.

Published
2002

9. Tuning inas/gaas quantum dot properties under Stranski-Krastanov growth mode for 1.3 microns applications

Author

Chen J.X., Markus A., Fiore A., Oesterle U., Stanley R.P., Carlin J.F., Houdre R., Ilegems M., Lazzarini L., Nasi L., Todaro M.T., Piscopiello E., Cingolani R., Catalano M., Katcki J., and Ratajczak J.

Subjects
Condensed Matter::Materials Science, Physics::Optics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Abstract

In this paper, we present a systematic study of the effect of growth parameters on the structural and optical properties of InAs quantum dot (QD) grown under Stranski-Krastanov mode by molecular beam epitaxy. The dot density is significantly reduced from 1.9E10 to 0.6E10 cm-2 as the growth rate decreases from 0.075 to 0.019 ML/s, while the island size becomes larger. Correspondingly, the emission wavelength shifts to the longer side. By increasing the indium fraction in the InGaAs capping layer, the emission wavelength increases further. At indium fraction of 0.3, a ground state transition wavelength as long as 1.4 microns with the excited state transition wavelength of around 1.3 microns has been achieved in our dots. The optical properties of QDs with a ground state transition wavelength of 1.3 microns but with different growth techniques were compared. The QDs grown with higher rate and embedded by InGaAs have a higher intensity saturation level from excitation dependent photoluminescence measurements and a smaller intensity decrease from temperature dependent measurements. Finally, single mirror light emitting diodes with a QD embedded in InGaAs have been fabricated. The quantum efficiency at room temperature is 1.3%, corresponding to a radiative efficiency of 21.5%.

Published
2002

12. Umbral calculus in Hilbert space

Author

Di Bucchianico, A., Loeb, D.E., Rota, G.C., Sagan, B., Stanley, R.P., and Kansrekening en Statistiek

Abstract

No abstract.

Published
1998

14. Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 µm applications

Author

Chen, J.X., Markus, A., Fiore, A., Oesterle, U., Stanley, R.P., Carlin, J.F., Houdré, R., Ilegems, M., Lazzarini, L., Nasi, L., Todaro, M.T., Piscopiello, E., Cingolani, R., Catalano, M., Katcki, J., Ratajczak, J., Chen, J.X., Markus, A., Fiore, A., Oesterle, U., Stanley, R.P., Carlin, J.F., Houdré, R., Ilegems, M., Lazzarini, L., Nasi, L., Todaro, M.T., Piscopiello, E., Cingolani, R., Catalano, M., Katcki, J., and Ratajczak, J.

Abstract

The authors present a systematic study of the effect of growth parameters on the structural and optical properties of InAs quantum dot (QD) grown under Stranski-Krastanov mode by MBE. The dot d. is significantly reduced 1.9 * 1010-0.6 * 1010 cm-2 as the growth rate decreases from 0.075 to 0.019 ML/s, while the island size becomes larger. Correspondingly, the emission wavelength shifts to the longer side. By increasing the In fraction in the InGaAs capping layer, the emission wavelength increases further. At In fraction of 0.3, a ground state transition wavelength as long as 1.4 micro m with the excited state transition wavelength of .apprx.1.3 micro m was achieved in the authors' dots. The optical properties of QDs with a ground state transition wavelength of 1.3 micro m but with different growth techniques were compared. The QDs grown with higher rate and embedded by InGaAs have a higher intensity satn. level from excitation dependent photoluminescence measurements and a smaller intensity decrease from temp. dependent measurements. Finally, single mirror light emitting diodes with a QD embedded in InGaAs were fabricated. The quantum efficiency at room temp. is 1.3%, corresponding to a radiative efficiency of 21.5%. [on SciFinder (R)]

Published
2002

15. Matrix effects on the structural and optical properties of InAs quantum dots

Author

Chen, J.X., Oesterle, U., Fiore, A., Stanley, R.P., Ilegems, M., Todaro, T., Chen, J.X., Oesterle, U., Fiore, A., Stanley, R.P., Ilegems, M., and Todaro, T.

Abstract

InAs quantum dots (QDs) were grown by MBE on different InGaAs or GaAs surface layers to study the effect of the matrix on the structural and optical properties of the QDs. The d. of QDs directly grown on GaAs is 1.1 * 1010 cm-2, and increases to 2.3 * 1010 cm-2 for dots grown on a 1. nm InGaAs layer. Single-mirror light-emitting-diode (SMLED) structures with InAs QDs capped by InGaAs and grown on GaAs and InGaAs layers were fabricated to compare the electroluminescence efficiency between the 2 structures. The max. external quantum efficiency for QDs on a GaAs structure is 1.1% while that for QDs on InGaAs is 1.3%. The corresponding radiative efficiency could be deduced to be 17.5% for QDs on GaAs and 21.5% for QDs on InGaAs, resp.

Published
2001

17. Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 µm

Author

Fiore, A., Borri, P., Langbein, W., Hvam, J.M., Oesterle, U., Houdré, R., Stanley, R.P., Ilegems, M., Fiore, A., Borri, P., Langbein, W., Hvam, J.M., Oesterle, U., Houdré, R., Stanley, R.P., and Ilegems, M.

Abstract

We present the time-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 µm at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10±2 ps is measured, indicating a fast capture and relaxation of carriers inside the dots. ©2000 American Institute of Physics.

Published
2000

35. Relaxation of microcavity polariton

Author

Wainstain, J., primary, Cassabois, G., additional, Roussignol, Ph., additional, Delalande, C., additional, Voos, M., additional, Assone, F.T., additional, Houdré, R., additional, Stanley, R.P., additional, and Oesterle, U., additional

Published
1997
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