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Self-organized silicide nanowires are considered as main building blocks of future nanoelectronics and have been intensively investigated. In nanostructures, the lattice vibrational waves (phonons) deviate drastically from those in bulk crystals, which gives rise to anomalies in thermodynamic, elastic, electronic, and magnetic properties. Hence, a thorough understanding of the physical properties of these materials requires a comprehensive investigation of the lattice dynamics as a function of the nanowire size. We performed a systematic lattice dynamics study of endotaxial FeSi$_2$ nanowires, forming the metastable, surface-stabilized $\alpha$-phase, which are in-plane embedded into the Si(110) surface. The average widths of the nanowires ranged from 24 to 3 nm, their lengths ranged from several $\mu$m to about 100 nm. The Fe-partial phonon density of states, obtained by nuclear inelastic scattering, exhibits a broadening of the spectral features with decreasing nanowire width. The experimental data obtained along and across the nanowires unveiled a pronounced vibrational anisotropy that originates from the specific orientation of the tetragonal $\alpha$-FeSi$_2$ unit cell on the Si(110) surface. The results from first-principles calculations are fully consistent with the experimental data and allow for a comprehensive understanding of the lattice dynamics of endotaxial silicide nanowires., Comment: 9 pages, 7 figures, 3 tables

We determined the lattice dynamics of metastable, surface-stabilized $\alpha$-phase FeSi$_2$ nanoislands epitaxially grown on the Si(111) surface with average heights and widths ranging from 1.5 to 20 nm and 18 to 72 nm, respectively. The crystallographic orientation, surface morphology and local crystal structure of the nanoislands were investigated by reflection high-energy electron diffraction, atomic force microscopy and X-ray absorption spectroscopy. The Fe-partial phonon density of states (PDOS), obtained by nuclear inelastic scattering, exhibits a pronounced damping and broadening of the spectral features with decreasing average island height. First-principles calculations of the polarization-projected Si- and Fe-partial phonon dispersions and PDOS enable the disentanglement of the contribution of the $xy$- and $z$-polarized phonons to the experimental PDOS. Modeling of the experimental data with the theoretical results unveils an enhanced damping of the $z$-polarized phonons for islands with average sizes below 10 nm. This phenomenon is attributed to the fact that the low-energy $z$-polarized phonons couple to the low-energy surface/interface vibrational modes. The thermodynamic and elastic properties obtained from the experimental data show a pronounced size-dependent behavior., Comment: 13 pages, 9 figures, 3 tables

The structure and dynamical properties of the Fe$_3$Si/GaAs(001) interface are investigated by density functional theory and nuclear inelastic scattering measurements. The stability of four different atomic configurations of the Fe$_3$Si/GaAs multilayers is analyzed by calculating the formation energies and phonon dispersion curves. The differences in charge density, magnetization, and electronic density of states between the configurations are examined. Our calculations unveil that magnetic moments of the Fe atoms tend to align in a plane parallel to the interface, along the [110] direction of the Fe$_3$Si crystallographic unit cell. In some configurations, the spin polarization of interface layers is larger than that of bulk Fe$_3$Si. The effect of the interface on element-specific and layer-resolved phonon density of states is discussed. The Fe-partial phonon density of states measured for the Fe$_3$Si layer thickness of three monolayers is compared with theoretical results obtained for each interface atomic configuration. The best agreement is found for one of the configurations with a mixed Fe-Si interface layer, which reproduces the anomalous enhancement of the phonon density of states below 10 meV, Comment: 14 pages, 9 figures, 4 tables

Attosecond streaking of photoelectrons emitted by extreme ultraviolet light has begun to reveal how electrons behave during their transport within simple crystalline solids. Many sample types within nanoplasmonics, thin-film physics, and semiconductor physics, however, do not have a simple single crystal structure. The electron dynamics which underpin the optical response of plasmonic nanostructures and wide-bandgap semiconductors happen on an attosecond timescale. Measuring these dynamics using attosecond streaking will enable such systems to be specially tailored for applications in areas such as ultrafast opto-electronics. We show that streaking can be extended to this very general type of sample by presenting streaking measurements on an amorphous film of the wide-bandgap semiconductor tungsten trioxide, and on polycrystalline gold, a material that forms the basis of many nanoplasmonic devices. Our measurements reveal the near-field temporal structure at the sample surface, and photoelectron wavepacket temporal broadening consistent with a spread of electron transport times to the surface.

The continuous need towards improving the capacity of magnetic storage devices requires materials with strong perpendicular magnetic anisotropy. FePd, CoPd and their Co(Fe)Pt counterparts very attractive candidate for such purposes. The magnetic properties of these films are largely dependent on the orientation and local distribution of the L10 FePd phase fraction which are mainly controlled by diffusion processes and involve diffusion paths of a few angstroms. Highly ordered as well as disordered epitaxial isotope-periodic 57FePd/natFePd (001) thin films were prepared by molecular-beam epitaxy on MgO(001) substrate. Short range diffusion of different phases in FePd thin film induced by room temperature 130 keV He+ irradiation was investigated at fluences up to 30\times1015 ions/cm2. Conversion electron M\"ossbauer spectroscopy and synchrotron M\"ossbauer reflectivity experiments showed that the inter-atomic diffusion across 57FePd/natFePd interface occur mainly via the iron rich regions. The ratio of the diffusion length in the L10, fcc and iron rich structure are 1:1.4:5.6 respectively. Assuming that the diffusion coefficient in the fcc phase is between the diffusion coefficient of the L10 phase in the crystallographic c direction and perpendicular to it, the diffusion coefficient in the c-direction of the L10 phase is found more than 1.9 times lower than in the a-b plane.

Experimental investigation as well as theoretical calculations, of the Fe-partial phonon density-of-states (DOS) for nominally Fe_52.5Cr_47.5 alloy having (a) alpha- and (b) sigma-phase structure were carried out. The former at sector 3-ID of the Advanced Photon Source, using the method of nuclear resonant inelastic X-ray scattering, and the latter with the direct method [K. Parlinski et al., Phys. Rev. Lett. {78, 4063 (1997)]. The characteristic features of phonon DOS, which differentiate one phase from the other, were revealed and successfully reproduced by the theory. Various data pertinent to the dynamics such as Lamb-Mossbauer factor, f, kinetic energy per atom, E_k, and the mean force constant, D, were directly derived from the experiment and the theoretical calculations, while vibrational specific heat at constant volume, C_V, and vibrational entropy, S were calculated using the Fe-partial DOS. Using the values of f and C_V, we determined values for Debye temperatures, T_D. An excellent agreement for some quantities derived from experiment and first-principles theory, like C_V and quite good one for others like D and S was obtained., Comment: 4 pages, 3 figures