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Multiplexed ion beam imaging by time-of-flight (MIBI-TOF) is a form of mass spectrometry imaging that uses metal labeled antibodies and secondary ion mass spectrometry to image dozens of proteins simultaneously in the same tissue section. Working with the National Cancer Institute's (NCI) Cancer Immune Monitoring and Analysis Centers (CIMAC), we undertook a validation study, assessing concordance across a dozen serial sections of a tissue microarray of 21 samples that were independently processed and imaged by MIBI-TOF or single-plex immunohistochemistry (IHC) over 12 days. Pixel-level features were highly concordant across all 16 targets assessed in both staining intensity (R

The recently installed and unique PIXE (particle-induced X-ray emission) set-up at the Helmholtz-Zentrum Dresden-Rossendorf (HZDR) is mainly dedicated to applications for a detailed overview of elemental composition over large sample areas within a short time even at trace level. The so-called High-Speed-PIXE (HS-PIXE), a combination of a pnCCD based pixel-detector with polycapillary X-ray optics, offers simultaneous imaging of sample areas up to 12 x 12 mm² with a lateral resolution better than 100 µm. Each of the 264 x 264 individual pixels detects X-ray photons in an energy range from 2 keV to 20 keV with an energy resolution of 156 eV (@Mn-Kα). A high precision sample manipulator offers the inspection of areas up to 250 x 250 mm². During first experiments the lateral resolution could be determined to (76 ± 23) µm using a sample of well-known sharp-edged chromium patterns. Trace element analysis has been performed using a geological sample, a tin ore, with an average Ta-concentration below 0.1 at.%. Fine-zoned structures became visible in the Ta-Lα intensity map within only 45 min. The High-Speed-PIXE closes a gap in the analytic process flow chain especially for geoanalytical characterisations. It is a unique and fast detection system to identify areas of interest in comparably short time at large-area scale for further analysis.

The electronic structure of phosphorus, sulfur, and chlorine in compounds with T_d and C_3v local symmetries was studied with high-resolution Kβ X-ray emission spectroscopy (XES) in the tender X-ray range. Measured spectra are compared to the results of ab initio quantum chemical calculations based on density functional theory (DFT). The spectral structure is reproduced by the model spectra of isolated XO^{; ; ; ; 4n–}; ; ; ; and XO^{; ; ; ; 3n–}; ; ; ; (X = P, S, or Cl) anions incorporating only the first coordination sphere around the central atom. The main spectral components can be explained by the molecular orbital theory. Finally, the potential of XES spectroscopy combined with DFT calculations to study the electronic structure of third-row elements in a slightly larger molecule is investigated.

We present results of recent development of the color X-ray camera, type SLcam®, allowing detection of X-ray images with few microns resolution. Such spectral resolution is achieved with the use of high-quality polycapillary optics combined with sub-pixel resolution. Imaging of Siemens star resolution test chart reveals that the resolution limit of SLcam® can go down to nearly 5μm. Several real sample examples of measurements carried out at the laboratory, synchrotron, and particle-induced X-ray emission beamlines are shown. This is the first time SLcam® is used as particle-induced X-ray emission detector. Copyright © 2015 John Wiley & Sons, Ltd.

Absorption effects in total reflection X-ray fluorescence (TXRF) analysis are important to consider, especially if external calibration is to be applied. With a color X-ray camera (CXC), that enables spatially and energy resolved XRF analysis, the absorption of the primary beam was directly visualized for μL-droplets and an array of pL-droplets printed on a Si-wafer with drop-on-demand technology. As expected, deposits that are hit by the primary beam first shade subsequent droplets, leading to a diminished XRF signal. This shading effect was quantified with enhanced precision making use of sub-pixel analysis that improves the spatial resolution of the camera. The measured absorption was compared to simulated results using three different model calculations. It was found they match very well (average deviation < 10%). Thus errors in quantification due to absorption effects can be accounted for in a more accurate manner.

Grazing incidence X-ray fluorescence spectra of nano-scaled periodic line structures were recorded at the four crystal monochromator beamline in the laboratory of the Physikalisch-Technische Bundesanstalt at the synchrotron radiation facility BESSY II. For different tilt angles between the lines and the plane of incidence of the monochromatic synchrotron radiation, spectral features are observed which can be understood and explained with calculations of the emerging X-ray standing wave (XSW) field. On the other hand, there are structures, i.e., pronounced modulations above the substrate's critical angle of external total reflection, which are not included in the XSW concept. Novel geometrical optics calculations can reproduce these structures taking the sample's specific geometric conditions into account.

We report on the surface-sensitive grazing emission X-ray fluorescence technique combined with synchrotron radiation excitation and high-resolution detection to realize depth-profile measurements of Al-implanted Si wafers. The principles of grazing emission measurements as well as the benefits offered by synchrotron sources and wavelength-dispersive detection setups are presented. It is shown that the depth distribution of implanted ions can be extracted from the dependence of the X-ray fluorescence intensity on the grazing emission angle with nanometer-scale precision provided that an analytical function describing the shape of the depth distribution is assumed beforehand. If no a priori assumption is made, except a bell shaped form for the dopant distribution, the profile derived from the measured angular distribution is found to reproduce quite satisfactorily the depth distribution of the implanted ions. Copyright © 2012 John Wiley & Sons, Ltd.

The synchrotron radiation based high-resolution grazing emission X-ray fluorescence (GEXRF) technique was used to extract the distribution of Al ions implanted with a dose of 1016 atoms/cm2 in Si wafers with energies ranging between 1 and 100 keV. The depth distributions of the implanted ions were deduced from the measured angular profiles of the Al-Kα X-ray fluorescence line with nanometer-scale precision. The experimental results were compared to theoretical predictions of the depth distributions resulting from ion implantation. A good agreement between experiment and theory was found which proved that the presented high-resolution grazing emission X-ray fluorescence technique is well suited to perform depth profiling measurements of impurities located within the extinction depth, provided the overall shape of the distribution can be assumed a priori.

Depth-profiling measurements by means of synchrotron radiation based grazing XRF techniques, i.e., grazing emission X-ray fluorescence (GEXRF) and grazing incidence X-ray fluorescence (GIXRF), present a promising approach for the non-destructive, sub-nanometer scale precision characterization of ultra shallow ion-implantations. The nanometer resolution is of importance with respect to actual semiconductor applications where the down-scaling of the device dimensions requires the doping of shallower depth ranges. The depth distributions of implanted ions can be deduced from the intensity dependence of the detected X-ray fluorescence (XRF) signal from the dopant atoms on either the grazing emission angle of the emitted X-rays (GEXRF), or the grazing incidence angle of the incident X-rays (GIXRF). The investigated sample depth depends on the grazing angle and can be varied from a few to several hundred nanometers. The GEXRF setup was equipped with a focusing polycapillary half-lens to allow for laterally resolved studies. The dopant depth distribution of the investigated low-energy (energy range from 1 keV up to 8 keV) P, In and Sb ion-implantations in Si or Ge wafers were reconstructed from the GEXRF data by using two different approaches, one with and one without a priori knowledge about the bell-shaped dopant depth distribution function. The results were compared to simulations and the trends predicted by theory were found to be well reproduced. The experimental GEXRF findings were moreover verified for selected samples by GIXRF.

In this work two synchrotron radiation-based depth-sensitive X-ray fluorescence techniques, grazing incidence X-ray fluorescence (GIXRF) and grazing emission X-ray fluorescence (GEXRF), are compared and their potential for non-destructive depth-profiling applications is investigated. The depth-profiling capabilities of the two methods are illustrated for five aluminum-implanted silicon wafers all having the same implantation dose of 1016 atoms per cm2 but with different implantation energies ranging from 1 keV up to 50 keV. The work was motivated by the ongoing downscaling effort of the microelectronics industry and the resulting need for more sensitive methods for the impurity and dopant depth-profile control. The principles of GIXRF and GEXRF, both based on the refraction of X-rays at the sample surface to enhance the surface-to-bulk ratio of the detected fluorescence signal, are explained. The complementary experimental setups employed at the Physikalisch-Technische Bundesanstalt (PTB) for GIXRF and the University of Fribourg for GEXRF are presented in detail. In particular, for each technique it is shown how the dopant depth profile can be derived from the angular intensity dependence of the Al Kα fluorescence line. The results are compared to theoretical predictions and, for two samples, crosschecked with values obtained from secondary ion mass spectroscopy (SIMS) measurements. A good agreement between the different approaches is found proving that the GIXRF and GEXRF methods can be efficiently employed to extract the dopant depth distribution of ion-implanted samples with good accuracy and over a wide range of implantation energies.

X ray Standing Wave (XSW) is a well established formalism for modelling Grazing Incidence X ray Fluorescence (GIXRF) experiments. However{} when probing nanostructured surfaces with complex morphology the effects of the interaction of the XSW with structure elements need to be investigated. This is not always easy and sometimes even not possible. In the present work a novel approach employing Geometrical Optics (GO) calculations is proposed. The model is employed for simulations of two different types of nano particles distributed on a flat surface. It is shown that GO simulation yields results with good agreement when compared to absolute measurements even when XSW deteriorates.

Experimental evidence for the correlated two-electron one-photon transitions ($1{s}^{\ensuremath{-}2}\ensuremath{\rightarrow}2{s}^{\ensuremath{-}1}2{p}^{\ensuremath{-}1}$) following single-photon $K$-shell double ionization is reported. The double $K$-shell vacancy states in solid Mg, Al, and Si were produced by means of monochromatized synchrotron radiation, and the two-electron one-photon radiative transitions were observed by using a wavelength dispersive spectrometer. The two-electron one-photon transition energies and the branching ratios of the radiative one-electron to two-electron transitions were determined and compared to available perturbation theory predictions and configuration interaction calculations.

Metal allergy is mainly an environmental disorder. Nickel is present everywhere. Exposure to nickel is a major cause of Allergic Contact Dermatitis, which respectively is an inflammatory, cellular type delayed hypersensitivity immuno response induced by antigen specific T cells. However, there is no standardized method to assess trace to moderate nickel diagnostic accuracy. The actual antigen is the nickel ion that can only penetrate skin epidermis in soluble form as ion metal hapten, leading to sensitization. Standard nickel sulfate molecule 5.0% w/v in petroleum, as contactant in patch test, evokes clinical global data which are inconclusive and disputable. Such limited antigenic surface recognition does not disclose in full subsequent immuno bio-responses. Nanoparticles have much larger surface area to unit mass ratios which has more powerful and specific foreign signal ability to activate human immune system responses, indeed. Increased immunogenicity with subsequent enhanced immuno-recognition of unrestrictedly exhibited surface antigenicity toward nickel nanoparticles is consistent with presented working hypothesis. Those unique, most effective, super sensitive surface nano-antigens are regulating with extreme precision; recognition, cellular binding and intra-cellular interactions comprising immunobiological responses toward nickel nano-particles. On the basis of patients under the study with Allergic Contact Dermatitis, and control group the distinctive diagnostic definition of nickel nano molecules will be formulated.

Various 3-dimensional nano-scaled periodic structures with different configurations and periods deposited on the surface of silicon and silica substrates were investigated by means of the grazing incidence and grazing emission X-ray fluorescence techniques. Apart from the characteristics which are typical for particle- and layer-like samples, the measured angular intensity profiles show additional periodicity-related features. The latter could be explained by a novel theoretical approach based on simple geometrical optics (GO) considerations. The new GO-based calculations were found to yield results in good agreement with experiment, also in cases where other theoretical approaches are not valid, e.g., periodic particle distributions with an increased surface coverage. (C) 2014 Elsevier B.V. All rights reserved.