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587 results on '"Stangl, J"'

1. Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys

Author

Fadaly, E. M. T., Dijkstra, A., Suckert, J. R., Ziss, D., Tilburg, M. A. J. v., Mao, C., Ren, Y., Lange, V. T. v., Kölling, S., Verheijen, M. A., Busse, D., Rödl, C., Furthmüller, J., Bechstedt, F., Stangl, J., Finley, J. J., Botti, S., Haverkort, J. E. M., and Bakkers, E. P. A. M.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science, Physics - Optics
Abstract

Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades and, despite tremendous efforts, it has remained elusive. Here, we demonstrate efficient light emission from direct bandgap hexagonal Ge and SiGe alloys. We measure a subnanosecond, temperature-insensitive radiative recombination lifetime and observe a similar emission yield to direct bandgap III-V semiconductors. Moreover, we demonstrate how by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned in a broad range, while preserving a direct bandgap. Our experimental findings are shown to be in excellent quantitative agreement with the ab initio theory. Hexagonal SiGe embodies an ideal material system to fully unite electronic and optoelectronic functionalities on a single chip, opening the way towards novel device concepts and information processing technologies., Comment: 25 pages,5 main figures, 7 supplementary figures

Published
2019
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2. Semiconductor quantum dots with light-hole exciton ground state: fabrication and fine structure

Author

Huo, Y. H., Witek, B. J., Kumar, S., Singh, R., Zallo, E., Grifone, R., Kriegner, D., Trotta, R., Akopian, N., Stangl, J., Zwiller, V., Bester, G., Rastelli, A., and Schmidt, O. G.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Quantum Physics, 81Sxx(General quantum mechanics and problems of quantization)
Abstract

Quantum dots (QDs) can act as convenient hosts of two-level quantum szstems, such as single electron spins, hole spins or excitons (bound electron-hole pairs). Due to quantum confinement, the ground state of a single hole confined in a QD usually has dominant heavy-hole (HH) character. For this reason light-hole (LH) states have been largely neglected, despite the fact that may enable the realilzation of coherent photon-to-spin converters or allow for faster spin manipulation compared to HH states. In this work, we use tensile strains larger than 0.3% to switch the ground state of excitons confined in high quality GaAs/AlGaAs QDs from the conventional HH- to LH-type. The LH-exciton fine structure is characterized by two in-plane-polarized lines and, ~400 micro-eV above them, by an additional line with pronounced out-of-plane oscillator strength, consistent with theoretical predictions based on atomistic empirical pseudopotential calculations and a simple mesoscopic model., Comment: 16 pages, 4 figures

Published
2012

3. Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction

Author

Hrauda, N., Zhang, J. J., Wintersberger, E., Etzelstorfer, T., Stangl, J., Carbone, D., Biasotto, C., Jovanovic, V., Nanver, L. K., Moers, J., Grützmacher, D., and Bauer, G.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

SiGe islands are used to induce tensile strain in the Si channel of Field Effect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ray diffraction experiments on a single fully-processed and functional device with a TiN+Al gate stack and source, gate, and drain contacts in place. The strain fields in the Si channel were explored using an x-ray beam focused to 400 nm diameter combined with finite element simulations. A maximum in-plane tensile strain of about 1% in the Si channel was found, which is by a factor of three to four higher than achievable for dislocation-free tensile strained Si in state-of-the-art devices., Comment: The following article has been submitted to Applied Physics Letters. After it is published, it will be found at http://apl.aip.org/

Published
2010

5. Contemporary Health Policy and Management: Challenges Remaining

Author

Mandl Stangl J

Abstract

The essay explores the broad outlines of the main barriers/enablers to health policy and management in the prevailing biomedical model from the late 19th century to the present. Based on this analysis, it proposes the modernisation of political leadership and multisectoral integration as key determinants of a resilient, holistic and equitable health system for the 21st century. The methodological process was based on the review and critical analysis of the relevant literature on the topic and the author's experience. We conclude with a call for reflection on the need for a clear understanding of these elements for a new vision of health policy and management.

Published
2022
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13. Integration of MOSFETs with SiGe dots as stressor material

Author

Nanver, L.K., Jovanović, V., Biasotto, C., Moers, J., Grützmacher, D., Zhang, J.J., Hrauda, N., Stoffel, M., Pezzoli, F., Schmidt, O.G., Miglio, L., Kosina, H., Marzegalli, A., Vastola, G., Mussler, G., Stangl, J., Bauer, G., van der Cingel, J., and Bonera, E.

Published
2011
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21. Towards the Path of 'Health in All Policies' in Germany: Proposal for a Policy Paper

Author

Mandl Stangl J

Abstract

The idea that it is possible to improve the health of citizens through integrated strategies with a "Health in all Policies" approach has been advocated in Germany mainly from an academic point of view and not from affiliations or competencies to strengthen political cooperation in, by and for health and well-being. Our central proposal suggests a political route for consideration by the federal government. We conclude with a series of reflections on the feasibility of the ideas presented.

Published
2021
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22. Efficient Light Emission from Hexagonal SiGe

Author

Fadaly, E.M.T., Dijkstra, Alain, Suckert, J.R., Ziss, D., van Tilburg, M.A.J., Ren, Y., Mao, C., van Lange, V.T., Kölling, S., Verheijen, M.A., Busse, D., Rödl, C., Furthmüller, J., Bechstedt, F., Stangl, J., Finley, J.J., Botti, Silvana, Haverkort, J.E.M., Bakkers, E.P.A.M., Advanced Nanomaterials & Devices, Optics of hex-SiGe, NanoLab@TU/e, Applied Physics and Science Education, Semiconductor Nanostructures and Impurities, Photonics and Semiconductor Nanophysics, Plasma & Materials Processing, Atomic scale processing, and Center for Quantum Materials and Technology Eindhoven

Abstract

Silicon and Germanium have an indirect band gap, which limits their use in optoelectronic devices. Here, we show that we can create a direct band gap in Si 1-x Ge x alloys by changing the crystal structure from cubic to hexagonal. DFT calculations predict a strong optical transition for 0.651-x Ge x alloys have been fabricated and efficient light emission has been observed.

Published
2021

28. ESUO - The European Synchrotron and FEL User Organisation: Aims and activities

Author

Aksoy, A., Arčon, I., Arikan, P., Bittencourt, C., Boscherini, F., Braz Fernandes, F. M., Brooks, N., Casu, B., Cianci, M., Feiters, M., Froideval, A., Granroth, S., Gross, S., Gutt, C., Hase, T., Jablonska, K., Jergel, M., Karsli, Ö., Khan, A., Kirm, M., Kokkinidis, M., Kövér, L., Kuzmin, A., Landau, M., Larsen, H. B., Lechner, R. T., Le-Hir, R., Logan, D. T., López, O., Lorentz, K., Mariani, C., Marinkovic, B., McGuinness, C., Meedom Nielsen, M., Mičetić, M., Mikulík, P., Padežnik Gomilšek, J., Petukhov, A., Pietsch, U., Renault, L., Russell, A., Shivachev, B., Sobierajski, R., Stangl, J., Thissen, R., Tromp, M., Vankó, G., Witkowska, A., Blasetti, C., Freire Anselmo, A. S., Grobosch, M., Helm, M., Schramm, B., Schultheiss, K., and Vollmer, A.

Abstract

The European Synchrotron and free-electron laser User Organisation (ESUO) represents about 22.000 users from 30 European member states and associated countries. Each country is represented within ESUO by one up to four national delegate(s), depending on the size of the user community in the respective country. The ESUO aims and activities are shown in this poster.

Published
2020

29. A structured open dataset of government interventions in response to COVID-19

Author

Desvars-Larrive, A., Dervic, E., Haug, N., Niederkrotenthaler, T., Chen, J., Di Natale, A., Lasser, J., Gliga, D.S., Roux, A., Sorger, J., Chakraborty, A., Ten, A., Dervic, A., Pacheco, A., Jurczak, A., Cserjan, D., Lederhilger, D., Bulska, D., Berishaj, D., Tames, E.F., Álvarez, F.S., Takriti, H., Korbel, J., Reddish, J., Grzymała-Moszczyńska, J., Stangl, J., Hadziavdic, L., Stoeger, L., Gooriah, L., Geyrhofer, L., Ferreira, M.R., Bartoszek, M., Vierlinger, R., Holder, S., Haberfellner, S., Ahne, V., Reisch, V., Servedio, V.D.P., Chen, X., Pocasangre-Orellana, X.M., Garncarek, Z., Garcia, D., Thurner, S., Desvars-Larrive, A., Dervic, E., Haug, N., Niederkrotenthaler, T., Chen, J., Di Natale, A., Lasser, J., Gliga, D.S., Roux, A., Sorger, J., Chakraborty, A., Ten, A., Dervic, A., Pacheco, A., Jurczak, A., Cserjan, D., Lederhilger, D., Bulska, D., Berishaj, D., Tames, E.F., Álvarez, F.S., Takriti, H., Korbel, J., Reddish, J., Grzymała-Moszczyńska, J., Stangl, J., Hadziavdic, L., Stoeger, L., Gooriah, L., Geyrhofer, L., Ferreira, M.R., Bartoszek, M., Vierlinger, R., Holder, S., Haberfellner, S., Ahne, V., Reisch, V., Servedio, V.D.P., Chen, X., Pocasangre-Orellana, X.M., Garncarek, Z., Garcia, D., and Thurner, S.

Abstract

In response to the COVID-19 pandemic, governments have implemented a wide range of non-pharmaceutical interventions (NPIs). Monitoring and documenting government strategies during the COVID-19 crisis is crucial to understand the progression of the epidemic. Following a content analysis strategy of existing public information sources, we developed a specific hierarchical coding scheme for NPIs. We generated a comprehensive structured dataset of government interventions and their respective timelines of implementation. To improve transparency and motivate collaborative validation process, information sources are shared via an open library. We also provide codes that enable users to visualise the dataset. Standardization and structure of the dataset facilitate inter-country comparison and the assessment of the impacts of different NPI categories on the epidemic parameters, population health indicators, the economy, and human rights, among others. This dataset provides an in-depth insight of the government strategies and can be a valuable tool for developing relevant preparedness plans for pandemic. We intend to further develop and update this dataset until the end of December 2020.

Published
2020

32. Ge/Si islands in a three-dimensional island crystal studied by x-ray diffraction

Author

Novak, J., Stangl, J., Fromherz, T., Holy, V., Zhenyang Zhong, Gang Chen, Bauer, G., and Struth, B.

Subjects
Germanium -- Chemical properties, Silicon compounds -- Chemical properties, X-rays -- Diffraction, X-rays -- Usage, Crystals -- Growth, Crystals -- Analysis, Physics
Abstract

Coplanar high-resolution x-ray diffraction is used for the characterization of size, chemical composition, and strain of Ge/Si (001) islands in a three-dimensional island crystal grown using self-assembly on a prepatterned (001) Si substrate. The Ge content in the islands is found to be on the average 40%, while the island shape does not change dramatically during capping.

Published
2005

34. X-ray diffraction on laterally modulated (InAs)(sub n)/(AlAs)(sub m) short-period superlattices

Author

Caha, O., Krapek V., Holy, V., Moss, S.C., H.H. Li, Norman, A.G., Mascarenhas, A., Reno, J.L., Stangl, J., and Meduna, M.

Subjects
Arsenic -- Properties, Indium -- Properties, Physics
Abstract

Lateral composition modulation in InAs/AIAs short-period superlattices was investigated by x-ray grazing-incidence diffraction and coplanar x-ray diffraction at a 'normal' wavelength and at an anomalous wavelength, for which diffraction from the (200) planes does not exhibit a chemical contrast. The experimental data were compared with theoretical simulations assuming that the interfaces consist of a periodic sequence of monoatomic steps.

Published
2004

40. X-ray reflectivity of self-assembled structures in SiGe multilayers and comparision with atomic force microscopy

Author

Meduna, M., Holy, V., Roch, T., Stangl, J., Bauer, G., Zhu, J., Brunner, K., and Abstreiter, G.

Subjects
Nanotechnology -- Research, Reflectance -- Research, Surfaces (Physics) -- Research, Thin films, Multilayered -- Research, Physics
Abstract

Research is presented concerning the use of nonspecular and specular x-ray reflectivity to investigate multilayers of SiGe/Si for interface morphology. The techniques used to grow the multilayers are discussed.

Published
2001

47. ESUO - The European Synchrotron and FEL User Organisation: Aims and activities

Author

Arčon, I., Arikan, P., Bittencourt, C., Boscherini, F., Braz Fernandes, F. M., Brooks, N., Casu, B., D'Astuto, M., Feiters, M., Froideval, A., Granroth, S., Gross, S., Gutt, C., Hase, T., Jablonska, K., Jergel, M., Khan, A., Kirm, M., Kokkinidis, M., Kövér, L., Lamba, D., Larsen, H. B., Lechner, R. T., Le Hir, R., Logan, D. T., López, O., Lorentz, K., Mariani, C., Marinkovic, B., Mcguinness, C., Meedom Nielsen, M., Micetic, M., Mickevicius, S., Mikulík, P., Petukhov, A., Pietsch, U., Pokroy, B., Purans, J., Renault, L., Santoro, G., Shivachev, B., Stangl, J., Tromp, M., Vankó, G., Blasetti, C., Freire Anselmo, A. S., Grobosch, M., Helm, M., Schramm, B., and Vollmer, A.

Abstract

The European Synchrotron and free-electron laser User Organisation (ESUO) established in 2010 represents about 22.000 users. It is composed of 30 member countries. Our vision is to support a thriving (European) synchrotron and FEL user community with equal opportunities of access and participation for all scientists, based solely on the scientific merit of their ideas.

Published
2019

48. ESUO - The European Synchrotron and FEL User Organisation

Author

Arčon, I., Arikan, P., Bittencourt, C., Boscherini, F., Braz Fernandes, F. M., Brooks, N., Casu, B., D'Astuto, M., Feiters, M., Froideval, A., Granroth, S., Gross, S., Gutt, C., Hase, T., Jablonska, K., Jergel, M., Khan, A., Kirm, M., Kokkinidis, M., Kövér, L., Lamba, D., Larsen, H. B., Lechner, R. T., Le Hir, R., Logan, D., López, O., Lorentz, K., Mariani, C., Marinkovic, B., Mcguinness, C., Meedom Nielsen, M., Micetic, M., Mickevicius, S., Mikulík, P., Petukhov, A., Pietsch, U., Pokroy, B., Purans, J., Renault, L., Santoro, G., Shivachev, B., Stangl, J., Tromp, M., Vankó, G., Freire Anselmo, A. S., Blasetti, C., Grobosch, M., Helm, M., Schramm, B., and Vollmer, A.

Abstract

The European Synchrotron and free-electron laser User Organisation (ESUO) established in 2010 represents about 22.000 users. It is composed of 30 member countries. Our vision is to support a thriving (European) synchrotron and FEL user community with equal opportunities of access and participation for all scientists, based solely on the scientific merit of their ideas.

Published
2019

50. Shape and size of buried SiGe islands

Author

Stangl, J., primary, Holý, V., additional, Daniel, A., additional, Roch, T., additional, Bauer, G., additional, Metzger, T. H., additional, Zhu, J., additional, Brunner, K., additional, and Abstreiter, G., additional

Published
2001
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