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In this work we demonstrate a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) that operates in an Accumulation Channel rather than Transfer Doping regime. Our FET devices demonstrate both extreme enhancement-mode operation and high on-current with improved channel charge mobility compared to Transfer-Doped equivalents. Electron-beam evaporated $Al_2O_3$ is used on H-diamond to suppress the Transfer Doping mechanism and produce an extremely high ungated channel resistance. A high-quality H-diamond surface with an unpinned Fermi level is crucially achieved, allowing for formation of a high-density hole accumulation layer by gating the entire device channel which is encapsulated in dual-stacks of $Al_2O_3$. Completed devices with gate/channel length of $1 \mu m$ demonstrate record threshold voltage $< -6 V$ with on-current $> 80 mA/mm$. Carrier density and mobility figures extracted by CV analysis indicate high 2D charge density of $~ 2 \times 10^{12} cm^{-2}$ and increased hole mobility of $110 cm^2 /V \cdot s$ in comparison with more traditional Transfer-Doped H-diamond FETs. These results demonstrate the most negative threshold voltage yet reported for H-diamond FETs and highlight a new strategy for the development of high-performance power devices that better exploit diamond's intrinsic dielectric properties and high hole mobility.

In recent years, various forms of nanocrystalline diamond (NCD) have emerged as an attractive group of diamond/graphite mixed-phase materials for a range of applications from electron emission sources to electrodes for neural interfacing. To tailor their properties for different uses, NCD surfaces can be terminated with various chemical functionalities, in particular hydrogen and oxygen, which shift the band edge positions and electron affinity values. While the band edge positions of chemically terminated single crystal diamond are well understood, the same is not true for nanocrystalline diamond, which has uncontrolled crystallographic surfaces with a variety of chemical states as well as graphitic grain boundary regions. In this work, the relative band edge positions of as-grown, hydrogen terminated, and oxygen terminated nitrogen-doped ultrananocrystalline diamond (N-UNCD) are determined using ultraviolet photoelectron spectroscopy (UPS), while the band bending is investigated using photoelectrochemical measurements. In contrast to the widely reported negative electrode affinity of hydrogen terminated single crystal diamond, our work demonstrates that hydrogen terminated N-UNCD exhibits a positive electron affinity owing to the increased surface and bulk defect densities. These findings elucidate the marked differences in electrochemical properties of hydrogen and oxygen terminated N-UNCD, such as the dramatic changes in electrochemical capacitance.

Nitrogen-doped ultrananocrystalline diamond (N-UNCD) is a form of diamond electrode with near-infrared photoresponsivity, making it well suited for physiological applications. N-UNCD's photoresponsivity is strongly influenced by its surface. While it is known that oxygen treatment provides a higher photoresponsivity, a better understanding of its surface processes is needed to tailor the material for optical neuromodulation. This work examines the impact of various oxygen treatment methods, with aim of creating oxygen rich surfaces with different chemical and structural properties. Surface characterisation methods along with electrochemical and photoelectrochemical measurements and modelling were used to investigate the films. It was found that oxygen furnace annealing resulted in orders of magnitude improvement in the near-infrared photoresponsivity, to 3.75 +/- 0.05 uA/W. This translates to an approximate 200 times increase in the photocurrent compared to the untreated surface. This enhancement in photocurrent is largely due to the changes in the chemical species present at the surface. The photocurrent is estimated to be sufficient for extra-cellular stimulation of brain neurons within the safe optical exposure limit, positioning N-UNCD as an excellent candidate to be used in next-generation photoelectrodes for photobiomodulation.

Fluorescence-guided surgery has emerged as a vital tool for tumour resection procedures. As well as intraoperative tumour visualisation, 5-ALA-induced PpIX provides an avenue for quantitative tumour identification based on ratiometric fluorescence measurement. To this end, fluorescence imaging and fibre-based probes have enabled more precise demarcation between the cancerous and healthy tissues. These sensing approaches, which rely on collecting the fluorescence light from the tumour resection site and its remote spectral sensing, introduce challenges associated with optical losses. In this work, we demonstrate the viability of tumour detection at the resection site using a miniature fluorescence measurement system. Unlike the current bulky systems, which necessitate remote measurement, we have adopted a millimetre-sized spectral sensor chip for quantitative fluorescence measurements. A reliable measurement at the resection site requires a stable optical window between the tissue and the optoelectronic system. This is achieved using an antifouling diamond window, which provides stable optical transparency. The system achieved a sensitivity of 92.3% and specificity of 98.3% in detecting a surrogate tumour at a resolution of 1 x 1 mm2. As well as addressing losses associated with collecting and coupling fluorescence light in the current remote sensing approaches, the small size of the system introduced in this work paves the way for its direct integration with the tumour resection tools with the aim of more accurate interoperative tumour identification.

Chemical functionalization of diamond surfaces by hydrogen is an important method for controlling the charge state of near-surface fluorescent color centers, an essential process in fabricating devices such as diamond field-effect transistors and chemical sensors, and a required first step for realizing families of more complex terminations through subsequent chemical processing. In all these cases, termination is typically achieved using hydrogen plasma sources which can etch or damage the diamond as well as deposited materials or embedded colour centers. This work explores alternative methods for lower-damage hydrogenation of diamond surfaces, specifically the annealing of diamond samples in high-purity, non-explosive mixtures of nitrogen and hydrogen gas, and the exposure of samples to microwave hydrogen plasmas in the absence of intentional stage heating. The effectiveness of these methods are characterized by x-ray photoelectron spectroscopy, and comparison of the results to density-functional modelling of the surface hydrogenation energetics implicates surface oxygen ligands as the primary factor limiting the termination quality of annealed samples. Finally, photoluminescence spectroscopy is used to verify that both the annealing and reduced sample temperature plasma methods are non-destructive to near-surface ensembles of nitrogen-vacancy centers, in stark contrast to plasma treatments which use heated sample stages., Comment: 24 pages, 4 figures

Near-surface nitrogen-vacancy centres are critical to many diamond-based quantum technologies such as information processors and nanosensors. Surface defects play an important role in the design and performance of these devices. The targeted creation of defects is central to proposed bottom-up approaches to nanofabrication of quantum diamond processors, and uncontrolled surface defects may generate noise and charge trapping which degrade shallow NV device performance. Surface preparation protocols may be able to control the production of desired defects and eliminate unwanted defects, but only if their atomic structure can first be conclusively identified. This work uses a combination of scanning tunnelling microscopy (STM) imaging and first-principles simulations to identify several surface defects on H:C(100)-2x1 surfaces prepared using chemical vapour deposition (CVD). The atomic structure of these defects is elucidated, from which the microscopic origins of magnetic noise and charge trapping is determined based on modelling of their paramagnetic properties and acceptor states. Rudimentary control of these deleterious properties is demonstrated through STM tip-induced manipulation of the defect structure. Furthermore, the results validate accepted models for CVD diamond growth by identifying key adsorbates responsible for nucleation of new layers., Comment: 15 pages, 14 figures, combined manuscript and supporting information

Van der Waals electrode integration is a promising strategy to create near-perfect interfaces between metals and two-dimensional materials, with advantages such as eliminating Fermi-level pinning and reducing contact resistance. However, the lack of a simple, generalizable pick-and-place transfer technology has greatly hampered the wide use of this technique. We demonstrate the pick-and-place transfer of pre-fabricated electrodes from reusable polished hydrogenated diamond substrates without the use of any surface treatments or sacrificial layers. The technique enables transfer of large-scale arbitrary metal electrodes, as demonstrated by successful transfer of eight different elemental metals with work functions ranging from 4.22 to 5.65 eV. The mechanical transfer of metal electrodes from diamond onto van der Waals materials creates atomically smooth interfaces with no interstitial impurities or disorder, as observed with cross-sectional high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy. As a demonstration of its device application, we use the diamond-transfer technique to create metal contacts to monolayer transition metal dichalcogenide semiconductors with high-work-function Pd, low-work-function Ti, and semi metal Bi to create n- and p-type field-effect transistors with low Schottky barrier heights. We also extend this technology to other applications such as ambipolar transistor and optoelectronics, paving the way for new device architectures and high-performance devices.

A boron-oxide termination of the diamond (100) surface has been formed by depositing molecular boron oxide $\rm{B_2O_3}$ onto the hydrogen-terminated (100) diamond surface under ultrahigh vacuum conditions and annealing to $\rm{950^{\circ} C}$. The resulting termination was highly oriented and chemically homogeneous, although further optimisation is required to increase the surface coverage beyond the 0.4 ML achieved here. This work demonstrates the possibility of using molecular deposition under ultrahigh vacuum conditions for complex surface engineering of the diamond surface, and may be a first step in an alternative approach to fabricating boron doped delta layers in diamond., Comment: Main text 10 pages, 4 figures. Supp Info 3 pages

Nitrogen-vacancy centers in diamond are a promising platform for nanoscale nuclear magnetic resonance sensing. Despite significant progress towards using NV centers to detect and localize nuclear spins down to the single spin level, NV-based spectroscopy of individual, intact, arbitrary target molecules remains elusive. NV molecular sensing requires that target molecules are immobilized within a few nanometers of NV centers with long spin coherence time. The inert nature of diamond typically requires harsh functionalization techniques such as thermal annealing or plasma processing, limiting the scope of functional groups that can be attached to the surface. Solution-phase chemical methods can be more readily generalized to install diverse functional groups, but they have not been widely explored for single-crystal diamond surfaces. Moreover, realizing shallow NV centers with long spin coherence times requires highly ordered single-crystal surfaces, and solution-phase functionalization has not yet been shown to be compatible with such demanding conditions. In this work, we report a versatile strategy to directly functionalize C-H bonds on single-crystal diamond surfaces under ambient conditions using visible light. This functionalization method is compatible with charge stable NV centers within 10 nm of the surface with spin coherence times comparable to the state of the art. As a proof of principle, we use shallow ensembles of NV centers to detect nuclear spins from functional groups attached to the surface. Our approach to surface functionalization based on visible light-driven C-H bond activation opens the door to deploying NV centers as a broad tool for chemical sensing and single-molecule spectroscopy.

Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range, which are incompatible with long-distance fiber communication and unfavorable for imaging in biological tissues. Here, we report the experimental observation of a new color center that emits in the telecom O-band, which we observe in silicon-doped bulk single crystal diamonds and microdiamonds. Combining absorption and photoluminescence measurements, we identify a zero-phonon line at 1221 nm and phonon replicas separated by 42 meV. Using transient absorption spectroscopy, we measure an excited state lifetime of around 270 ps and observe a long-lived baseline that may arise from intersystem crossing to another spin manifold.

We demonstrate quantum sensing of dc magnetic fields that exceeds the sensitivity of conventional $T_2^\ast$-limited dc magnetometry by more than an order of magnitude. We used nitrogen-vacancy centers in a diamond rotating at periods comparable to the spin coherence time, and characterize the dependence of magnetic sensitivity on measurement time and rotation speed. Our method up-converts only the dc field of interest and preserves the quantum coherence of the sensor. These results definitively improve the sensitivity of a quantum magnetometer to dc fields, an important and useful addition to the quantum sensing toolbox., Comment: 5pgs main text, 10 pgs supplementary

The nitrogen-vacancy colour centre in diamond is emerging as one of the most important solid-state quantum systems. It has applications to fields including high-precision sensing, quantum computing, single photon communication, metrology, nanoscale magnetic imaging and biosensing. For all of these applications, a high quantum yield of emitted photons is desirable. However, diamond samples engineered to have high densities of nitrogen-vacancy centres show levels of brightness varying significantly within single batches, or even within the same sample. Here we show that nearby nitrogen impurities quench emission of nitrogen-vacancy centres via non-radiative transitions, resulting in a reduced fluorescence quantum yield. We monitored the emission properties of nitrogen-vacancy centre ensembles from synthetic diamond samples with different concentrations of nitrogen impurities. While at low nitrogen densities of 1.81 ppm we measured a lifetime of 13.9 ns, we observed a strong reduction in lifetime with increasing nitrogen density. We measure a lifetime as low as 4.4 ns at a nitrogen density of 380 ppm. The change in lifetime matches a reduction in relative fluorescence quantum yield from 77.4 % to 32 % with an increase in nitrogen density from 88 ppm to 380 ppm, respectively. These results will inform the conditions required to optimise the properties of diamond crystals devices based on the fluorescence of nitrogen-vacancy centres. Furthermore, this work provides insights into the origin of inhomogeneities observed in high-density nitrogen-vacancy ensembles within diamonds and nanodiamonds., Comment: 22 pages, 14 figures (4 figures in the main text, 10 figures in the supplementary information)

Controlling and manipulating individual quantum systems in solids underpins the growing interest in development of scalable quantum technologies. Recently, hexagonal boron nitride has garnered significant attention in quantum photonic applications due to its ability to host optically stable quantum emitters. However, the large band gap of hBN and the lack of efficient doping inhibits electrical triggering and limits opportunities to study electrical control of emitters. Here, we show an approach to electrically modulate quantum emitters in n hBN graphene van der Waals heterostructure. We show that quantum emitters in hBN can be reversibly activated and modulated by applying a bias across the device. Notably, a significant number of quantum emitters are intrinsically dark, and become optically active at non-zero voltages. To explain the results, we provide a heuristic electrostatic model of this unique behaviour. Finally, employing these devices we demonstrate a nearly coherent source with linewidths of 160 MHz. Our results enhance the potential of hBN for tuneable solid state quantum emitters for the growing field of quantum information science.

We demonstrate two-dimensional photonic crystal cavities operating at telecommunication wavelengths in a single-crystal diamond membrane. We use a high-optical-quality and thin (~ 300 nm) diamond membrane, supported by a polycrystalline diamond frame, to realize fully suspended two-dimensional photonic crystal cavities with a high theoretical quality factor of ~ $8\times10^6$ and a relatively small mode volume of ~2$({\lambda}/n)^3$. The cavities are fabricated in the membrane using electron-beam lithography and vertical dry etching. We observe cavity resonances over a wide wavelength range spanning the telecommunication O- and S-bands (1360 nm-1470 nm) with Q factors of up to ~1800. Our method offers a new direction for on-chip diamond nanophotonic applications in the telecommunication-wavelength range.

Nitrogen is frequently included in chemical vapour deposition feed gases to accelerate diamond growth. While there is no consensus for an atomistic mechanism of this effect, existing studies have largely focused on the role of sub-surface nitrogen and nitrogen-based adsorbates. In this work, we demonstrate the catalytic effect of surface-embedded nitrogen in nucleating new layers of (100) diamond. To do so we develop a model of nitrogen overgrowth using density functional theory. Nucleation of new layers occurs through C insertion into a C--C surface dimer. However, we find that C insertion into a C--N dimer has substantially reduced energy requirements. In particular, the rate of the key dimer ring-opening and closing mechanism is increased 400-fold in the presence of nitrogen. Full incorporation of the substitutional nitrogen defect is then facilitated through charge transfer of an electron from the nitrogen lone pair to charge acceptors on the surface. This work provides a compelling mechanism for the role of surface-embedded nitrogen in enhancing (100) diamond growth through the nucleation of new layers. Furthermore, it demonstrates a pathway for substitutional nitrogen formation during chemical vapour deposition which can be extended to study the creation of technologically relevant nitrogen-based defects., Comment: main text: 19 pages, 9 figures supplementary: 10 pages, 10 figures

The nitrogen vacancy (NV) center in diamond exhibits spin-dependent fluorescence and long spin coherence times under ambient conditions, enabling applications in quantum information processing and sensing. NV centers near the surface can have strong interactions with external materials and spins, enabling new forms of nanoscale spectroscopy. However, NV spin coherence degrades within 100 nanometers of the surface, suggesting that diamond surfaces are plagued with ubiquitous defects. Prior work on characterizing near-surface noise has primarily relied on using NV centers themselves as probes; while this has the advantage of exquisite sensitivity, it provides only indirect information about the origin of the noise. Here we demonstrate that surface spectroscopy methods and single spin measurements can be used as complementary diagnostics to understand sources of noise. We find that surface morphology is crucial for realizing reproducible chemical termination, and use these insights to achieve a highly ordered, oxygen-terminated surface with suppressed noise. We observe NV centers within 10 nm of the surface with coherence times extended by an order of magnitude.

Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity when doped heavily with boron. The phenomena has been demonstrated in samples grown by chemical vapour deposition where the boron concentration exceeds the critical concentration for the metal-to-insulator transition of $n_{MIT} \gtrsim 4\times10^{20}/\text{cm}^3$. While the threshold carrier concentration for superconductivity is generally well established in the literature, it is unclear how well correlated higher critical temperatures are with increased boron concentration. Previous studies have generally compared several samples grown under different plasma conditions, or on substrates having different crystallographic orientations, in order to vary the incorporation of boron into the lattice. Here, we present a study of a single sample with unchanging boron concentration, and instead modify the charge carrier concentration by introducing compensating defects via high energy ion irradiation. Superconductivity is completely suppressed when the number of defects is sufficient to compensate the hole concentration to below threshold. Furthermore, we show it is possible to recover the superconductivity by annealing the sample in vacuum to remove the compensating defects.

Diamond materials are central to an increasing range of advanced technological demonstrations, from high power electronics, to nano-scale quantum bio-imaging with unprecedented sensitivity. However, the full exploitation of diamond for these applications is often limited by the uncontrolled nature of the diamond material surface, which suffers from Fermi-level pinning and hosts a significant density of electro-magnetic noise sources. These issues occur despite the oxide-free and air-stable nature of the diamond crystal surface, which should be an ideal candidate for functionalization and chemical-engineering. In this work we reveal a family of previously unidentified and near-ubiquitous primal surface defects which we assign to differently reconstructed surface vacancies. The density of these defects is quantified with X-ray absorption spectroscopy, their energy structures are elucidated by ab initio calculations, and their effect on near-surface quantum probes is measured directly. Subsequent ab-initio calculation of band-bending from these defects suggest they are the source of Fermi-level pinning at most diamond surfaces. Finally, an investigation is conducted on a broad range of post-growth surface treatments and concludes that none of them can reproducibly reduce this defect density below the Fermi-pinning threshold, making this defect a prime candidate as the source for decoherence-limiting noise in near-surface quantum probes., Comment: 12 pages, 3 figures; SI: 10 pages, 10 figures

We present a flexible scheme to realize non-artificial non-Markovian dynamics of an electronic spin qubit, using a nitrogen-vacancy center in diamond where the inherent nitrogen spin serves as a regulator of the dynamics. By changing the population of the nitrogen spin, we show that we can smoothly tune the non-Markovianity of the electron spin's dynamic. Furthermore, we examine the decoherence dynamics induced by the spin bath to exclude other sources of non-Markovianity. The amount of collected measurement data is kept at a minimum by employing Bayesian data analysis. This allows for a precise quantification of the parameters involved in the description of the dynamics and a prediction of so far unobserved data points., Comment: 12 pages, 9 figure, including supplemental material

Precise control of the resonant frequency of a spin qubit is of fundamental importance to quantum sensing protocols. We demonstrate a control technique on a single nitrogen-vacancy (NV) centre in diamond where the applied magnetic field is modified by fine-tuning a permanent magnet's magnetisation via temperature control. Through this control mechanism, nanoscale cross-relaxation spectroscopy of both electron and nuclear spins in the vicinity of the NV centre are performed. We then show that through maintaining the magnet at a constant temperature an order of magnitude improvement in the stability of the NV qubit frequency can be achieved. This improved stability is tested in the polarisation of a small ensemble of nearby $^{13}$C spins via resonant cross-relaxation and the lifetime of this polarisation explored. The effectiveness and relative simplicity of this technique may find use in the realisation of portable spectroscopy and/or hyperpolarisation systems., Comment: 8 pages, 6 figures including Supporting Information

The hyperpolarisation of nuclear spins within target molecules is a critical and complex challenge in magnetic resonance imaging (MRI) and nuclear magnetic resonance (NMR) spectroscopy. Hyperpolarisation offers enormous gains in signal and spatial resolution which may ultimately lead to the development of molecular MRI and NMR. At present, techniques used to polarise nuclear spins generally require low temperatures and/or high magnetic fields, radio-frequency control fields, or the introduction of catalysts or free-radical mediators. The emergence of room temperature solid-state spin qubits has opened exciting new pathways to circumvent these requirements to achieve direct nuclear spin hyperpolarisation using quantum control. Employing a novel cross-relaxation induced polarisation (CRIP) protocol using a single nitrogen-vacancy (NV) centre in diamond, we demonstrate the first external nuclear spin hyperpolarisation achieved by a quantum probe, in this case of $^1$H molecular spins in poly(methyl methacrylate). In doing so, we show that a single qubit is capable of increasing the thermal polarisation of $\sim 10^6$ nuclear spins by six orders of magnitude, equivalent to an applied magnetic field of $10^5$\,T. The technique can also be tuned to multiple spin species, which we demonstrate using both \C{13} and $^1$H nuclear spin ensembles. Our results are analysed and interpreted via a detailed theoretical treatment, which is also used to describe how the system can be scaled up to a universal quantum hyperpolarisation platform for the production of macroscopic quantities of contrast agents at high polarisation levels for clinical applications. These results represent a new paradigm for nuclear spin hyperpolarisation for molecular imaging and spectroscopy, and beyond into areas such as materials science and quantum information processing., Comment: 6 pages, 4 figures

The coherent control of spin qubits forms the basis of many applications in quantum information processing and nanoscale sensing, imaging and spectroscopy. Such control is conventionally achieved by direct driving of the qubit transition with a resonant global field, typically at microwave frequencies. Here we introduce an approach that relies on the resonant driving of nearby environment spins, whose localised magnetic field in turn drives the qubit when the environmental spin Rabi frequency matches the qubit resonance. This concept of environmentally mediated resonance (EMR) is explored experimentally using a qubit based on a single nitrogen-vacancy (NV) centre in diamond, with nearby electronic spins serving as the environmental mediators. We demonstrate EMR driven coherent control of the NV spin-state, including the observation of Rabi oscillations, free induction decay, and spin-echo. This technique also provides a way to probe the nanoscale environment of spin qubits, which we illustrate by acquisition of electron spin resonance spectra of single NV centres in various settings., Comment: 12 pages including SI

The implementation of nuclear magnetic resonance (NMR) at the nanoscale is a major challenge, as conventional systems require relatively large ensembles of spins and limit resolution to mesoscopic scales. New approaches based on quantum spin probes, such as the nitrogen-vacancy (NV) centre in diamond, have recently achieved nano-NMR under ambient conditions. However, the measurement protocols require application of complex microwave pulse sequences of high precision and relatively high power, placing limitations on the design and scalability of these techniques. Here we demonstrate a microwave-free method for nanoscale NMR using the NV centre, which is a far less invasive, and vastly simpler measurement protocol. By utilising a carefully tuned magnetic cross-relaxation interaction between a subsurface NV spin and an external, organic environment of proton spins, we demonstrate NMR spectroscopy of $^1$H within a $\approx(10~{\rm nm})^3$ sensing volume. We also theoretically and experimentally show that the sensitivity of our approach matches that of existing microwave control-based techniques using the NV centre. Removing the requirement for coherent manipulation of either the NV or the environmental spin quantum states represents a significant step towards the development of robust, non-invasive nanoscale NMR probes., Comment: 7 pages, 4 figures

Since its first isolation in 2004, graphene has been found to host a plethora of unusual electronic transport phenomena, making it a fascinating system for fundamental studies in condensed-matter physics as well as offering tremendous opportunities for future electronic and sensing devices. However, to fully realise these goals a major challenge is the ability to non-invasively image charge currents in monolayer graphene structures and devices. Typically, electronic transport in graphene has been investigated via resistivity measurements, however, such measurements are generally blind to spatial information critical to observing and studying landmark transport phenomena such as electron guiding and focusing, topological currents and viscous electron backflow in real space, and in realistic imperfect devices. Here we bring quantum imaging to bear on the problem and demonstrate high-resolution imaging of current flow in graphene structures. Our method utilises an engineered array of near-surface, atomic-sized quantum sensors in diamond, to map the vector magnetic field and reconstruct the vector current density over graphene geometries of varying complexity, from mono-ribbons to junctions, with spatial resolution at the diffraction limit and a projected sensitivity to currents as small as 1 {\mu}A. The measured current maps reveal strong spatial variations corresponding to physical defects at the sub-{\mu}m scale. The demonstrated method opens up an important new avenue to investigate fundamental electronic and spin transport in graphene structures and devices, and more generally in emerging two-dimensional materials and thin film systems., Comment: 10 pages, 4 figures; SI: 15 pages, 8 figures

We investigate the photo-induced spin dynamics of single nitrogen-vacancy (NV) centres in diamond near the electronic ground state level anti-crossing (GSLAC), which occurs at an axial magnetic field around 1024 G. Using optically detected magnetic resonance spectroscopy, we first find that the electron spin transition frequency can be tuned down to 100 kHz for the \NV{14} centre, while for the \NV{15} centre the transition strength vanishes for frequencies below about 2 MHz owing to the GSLAC level structure. Using optical pulses to prepare and readout the spin state, we observe coherent spin oscillations at 1024 G for the \NV{14}, which originate from spin mixing induced by residual transverse magnetic fields. This effect is responsible for limiting the smallest observable transition frequency, which can span two orders of magnitude from 100 kHz to tens of MHz depending on the local magnetic noise. A similar feature is observed for the \NV{15} centre at 1024 G. As an application of these findings, we demonstrate all-optical detection and spectroscopy of externally-generated fluctuating magnetic fields at frequencies from 8 MHz down to 500 kHz, using a \NV{14} centre. Since the Larmor frequency of most nuclear spin species lies within this frequency range near the GSLAC, these results pave the way towards all-optical, nanoscale nuclear magnetic resonance spectroscopy, using longitudinal spin cross-relaxation., Comment: 10 pages, 6 figures

We demonstrate a wide-band all-optical method of nanoscale magnetic resonance (MR) spectroscopy under ambient conditions. Our method relies on cross-relaxation between a probe spin, the electronic spin of a nitrogen-vacancy centre in diamond, and target spins as the two systems are tuned into resonance. By optically monitoring the spin relaxation time ($T_1$) of the probe spin while varying the amplitude of an applied static magnetic field, a frequency spectrum of the target spin resonances, a $T_1$-MR spectrum, is obtained. As a proof of concept, we measure $T_1$-MR spectra of a small ensemble of $^{14}$N impurities surrounding the probe spin within the diamond, with each impurity comprising an electron spin 1/2 and a nuclear spin 1. The intrinsically large bandwidth of the technique and probe properties allows us to detect both electron spin transitions -- in the GHz range -- and nuclear spin transitions -- in the MHz range -- of the $^{14}$N spin targets. The measured frequencies are found to be in excellent agreement with theoretical expectations, and allow us to infer the hyperfine, quadrupole and gyromagnetic constants of the target spins. Analysis of the strength of the resonances obtained in the $T_1$-MR spectrum reveals that the electron spin transitions are probed via dipole interactions, while the nuclear spin resonances are dramatically enhanced by hyperfine coupling and an electron-mediated process. Finally, we investigate theoretically the possibility of performing $T_1$-MR spectroscopy on nuclear spins without hyperfine interaction and predict single-proton sensitivity using current technology. This work establishes $T_1$-MR as a simple yet powerful technique for nanoscale MR spectroscopy, with broadband capability and a projected sensitivity down to the single nuclear spin level., Comment: 23 pages, 8 figures

We report large negative electron affinity (NEA) on diamond (100) using magnesium adsorption on a previously oxygen-terminated surface. The measured NEA is up to $(-2.01\pm0.05)$ eV, the largest reported negative electron affinity to date. Despite the expected close relationship between the surface chemistry of Mg and Li species on oxygen-terminated diamond, we observe differences in the adsorption properties between the two. Most importantly, a high-temperature annealing step is not required to activate the Mg-adsorbed surface to a state of negative electron affinity. Diamond surfaces prepared by this procedure continue to possess negative electron affinity after exposure to high temperatures, air and even immersion in water., Comment: 7 pages, 5 figures

The negatively charged nitrogen-vacancy (NV-) center in diamond has realized new frontiers in quantum technology. Here, the center's optical and spin resonances are observed under hydrostatic pressures up to 60 GPa. Our observations motivate powerful new techniques to measure pressure and image high pressure magnetic and electric phenomena. Our observations further reveal a fundamental inadequacy of the current model of the center and provide new insight into its electronic structure., Comment: 6 pages, 3 figures

Individual color centers in diamond are promising for near-term quantum technologies including quantum key distribution and metrology. Here we show fabrication of a new color center which has photophysical properties surpassing those of the two main-stay centers, namely the nitrogen vacancy and NE8 centers. The new center is fabricated using focused ion beam implantation of nickel into isolated chemical vapor deposited diamond micro-crystals. Room temperature photoluminescence studies reveal a narrow emission in the near infrared region centered at 768 nm with a lifetime as short as 2 ns. Its focused ion beam compatibility opens the prospect to fabrication with nanometer resolution and realization of integrated quantum photonic devices. Preliminary investigations suggest that this center arises from an as-yet uncharacterized nickel-silicon complex.