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In this present research, we synthesized pure α‐Fe2O3, NiO, and a microporous α‐Fe2O3@NiO heterostructure electrode via the spray pyrolysis method. The microporous α‐Fe2O3@NiO heterostructure electrode, with its highly porous structure, offers a larger electrode‐electrolyte interface, which results in improved electrochemical performance. Specifically, the microporous heterostructure exhibited a higher specific capacitance of 530.87 F/g at a current density of 7 mA/cm2 in a 1 M NaOH electrolyte, as compared to α‐Fe2O3 (187.12 F/g at 7 mA/cm2) and NiO (492.69 F/g at 7 mA/cm2). The microporous α‐Fe2O3@NiO heterostructures exhibited significantly enhanced electrochemical performance as compared to the individual α‐Fe2O3 and NiO samples, owing to the synergistic effect of the heterostructure. Furthermore, the microporous α‐Fe2O3@NiO heterostructure exhibited high specific capacitances and exceptional cycling stability for more than 2000 cycles, indicating their potential as excellent electrode for supercapacitor devices. [ABSTRACT FROM AUTHOR]

Gallium telluride (GaTe) is a two-dimensional (2D) semiconductor that has received considerable attention due to its potential applications in solid state optics and electronics, particularly as a sensing material in field-effect transistor (FET) photodetectors. However, there are limited reports that show its capability as a passive-type photodetector. In this work, high-quality van der Waals (vdW) layered GaTe single crystals were grown and used as the sensing material for small light power density photodetection. The vdW layered GaTe-based passive photodetector was evaluated over a wide range of power densities at various wavelengths. The measured response and decay times are ∼1.1 s and 2.6 s, which are better than those of previously reported two-terminal passive GaTe photodetectors, and the calculated responsivities are up to 15.15, 17.67, and 17.81 A W−1 under 630 nm, 530 nm, and 460 nm irradiation, respectively. The vdW layered GaTe-based photodetector was also tested at various bias voltages to determine its performance efficiency. Although operated at a small bias voltage of 0.2 V, it is nonetheless able to detect signals as low as 0.05 W m−2, demonstrating high efficiency photodetection capability. [ABSTRACT FROM AUTHOR]