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We report in this paper a new MRI contrast agent based on magnetic nanodiamonds fabricated by Fe ion implantation. The Fe atoms that are implanted into the nanodiamonds are not in direct contact with the outside world, enabling this new contrast agent to be free from cell toxicity. The image enhancement was shown clearly through T2 weighted images. The concentration dependence of the T2 relaxation time gives a relaxivity value that is about seven times that of the regular non-magnetic nanodiamonds. Cell viability study has also been performed. It was shown that they were nearly free from cytotoxicity independent of the particle concentration used. The imaging capability demonstrated here adds a new dimension to the medical application of nanodiamonds. In the future one will be able to combine this capability of magnetic nanodiamonds with other functions through surface modifications to perform drug delivery, targeted therapy, localized thermal treatment and diagnostic imaging at the same time.

Boron doped diamond (BDD) has great potential in electrical, and electrochemical sensing applications. The growth parameters, substrates, and synthesis method play a vital role in the preparation of semiconducting BDD to metallic BDD. Doping of other elements along with boron (B) into diamond demonstrated improved efficacy of B doping and exceptional properties. In the present study, B and nitrogen (N) co-doped diamond has been synthesized on single crystalline diamond (SCD) IIa and SCD Ib substrates in a microwave plasma-assisted chemical vapor deposition process. The B/N co-doping into CVD diamond has been conducted at constant N flow of N/C ∼ 0.02 with three different B/C doping concentrations of B/C ∼ 2500 ppm, 5000 ppm, 7500 ppm. Atomic force microscopy topography depicted the flat and smooth surface with low surface roughness for low B doping, whereas surface features like hillock structures and un-epitaxial diamond crystals with high surface roughness were observed for high B doping concentrations. KPFM measurements revealed that the work function (4.74–4.94 eV) has not varied significantly for CVD diamond synthesized with different B/C concentrations. Raman spectroscopy measurements described the growth of high-quality diamond and photoluminescence studies revealed the formation of high-density nitrogen-vacancy centers in CVD diamond layers. X-ray photoelectron spectroscopy results confirmed the successful B doping and the increase in N doping with B doping concentration. The room temperature electrical resistance measurements of CVD diamond layers (B/C ∼ 7500 ppm) have shown the low resistance value ∼9.29 Ω for CVD diamond/SCD IIa, and the resistance value ∼16.55 Ω for CVD diamond/SCD Ib samples.

We demonstrate fluorescent Fe embedded magnetic nanodiamonds by ion implantation and two-step annealing. The diamond characteristics with a highly ordered core and a graphite surface layer are maintained after the implantation process. After the two-step annealing process, a bright red fluorescence associated with nitrogen-vacancy centers is observed. These new fluorescent magnetic nanodiamonds can be used as a dual-function in vivo tracer with both optical visibility and magnetic resonance imaging capabilities. They are potentially useful for the more advanced in vivo biological and medical applications.

Although nanodiamonds have long being considered as a potential tool for biomedical research, the practical in vivo application of nanodiamonds remains relatively unexplored. In this paper, we present the first application of in vivo MRI contrast enhancement using only iron embedded magnetic nanodiamonds. MR image enhancement was clearly demonstrated in the rendering of T2-weighted images of mice obtained using an unmodified commercial MRI scanner. The excellent contrast obtained using these nanodiamonds opens the door to the non-invasive in vivo tracking of NDs and image enhancement. In the future, one can apply these magnetic nanodiamonds together with surface modifications to facilitate drug delivery, targeted therapy, localized thermal treatment, and diagnostic imaging., Comment: 19 pages, 6 figures

An electron field emitter with superior electron field emission (EFE) properties and improved lifetime stability is being demonstrated via the combination of carbon nanotubes and the CH4/N2 plasma grown ultrananocrystalline diamond (N-UNCD) films. The resistance of the carbon nanotubes to plasma ion bombardment is improved by the formation of carbon nanocones on the side walls of the carbon nanotubes, thus forming strengthened carbon nanotubes (s-CNTs). The N-UNCD films can thus be grown on s-CNTs, forming N-UNCD/s-CNTs carbon nanocomposite materials. The N-UNCD/s-CNTs films possess good conductivity of σ = 237 S/cm and marvelous EFE properties, such as low turn-on field of (E0) = 3.58 V/μm with large EFE current density of (Je) = 1.86 mA/cm2 at an applied field of 6.0 V/μm. Moreover, the EFE emitters can be operated under 0.19 mA/cm2 for more than 350 min without showing any sign of degradation. Such a superior EFE property along with high robustness characteristic of these combination of materials are n...

Silicon-vacancy (SiV) centers were produced in single crystalline diamond (SCD) and ultrananocrystalline diamond (UNCD) nanostructures via Si ion implantation or in situ Si doping. SiV-embedded UNCD (SiV-UNCD) was fabricated by both top-down and bottom-up methods. The spectral properties of the SiV centers, including the zero phonon line (ZPL) width and decay time, were investigated in the SCD and UNCD nanostructures. All the SiV-UNCD nanostructures showed bright emission regardless of the preparation method. However, the decay time of the SiV centers was affected by the synthesis procedure. A SiV decay time of τ ∼ 0.19 ns was observed for UNCD nanostructures formed by in situ doping, whereas the SiV decay time was ∼0.43 ns for SiV-UNCD clusters prepared by Si ion implantation into UNCD deposited on Ti/sapphire substrates. The ultrasonication of UNCD clusters on Ti/sapphire pyramids produced bright SiV-UNCD nanoclusters with sizes of ∼50 nm, a ZPL width of 13.5 nm, and a decay time of 0.35 ns, suggesting promising potential in bioimaging applications. SiV-containing SCD (type Ia or type IIa) showed enhanced SiV spectral properties with a ZPL width of 6.08 nm and longer decay time of 1.3 ns.Silicon-vacancy (SiV) centers were produced in single crystalline diamond (SCD) and ultrananocrystalline diamond (UNCD) nanostructures via Si ion implantation or in situ Si doping. SiV-embedded UNCD (SiV-UNCD) was fabricated by both top-down and bottom-up methods. The spectral properties of the SiV centers, including the zero phonon line (ZPL) width and decay time, were investigated in the SCD and UNCD nanostructures. All the SiV-UNCD nanostructures showed bright emission regardless of the preparation method. However, the decay time of the SiV centers was affected by the synthesis procedure. A SiV decay time of τ ∼ 0.19 ns was observed for UNCD nanostructures formed by in situ doping, whereas the SiV decay time was ∼0.43 ns for SiV-UNCD clusters prepared by Si ion implantation into UNCD deposited on Ti/sapphire substrates. The ultrasonication of UNCD clusters on Ti/sapphire pyramids produced bright SiV-UNCD nanoclusters with sizes of ∼50 nm, a ZPL width of 13.5 nm, and a decay time of 0.35 ns, suggesting ...

Carbon nanomaterials such as nanotubes, nanoflakes/nanowalls, and graphene have been used as electron sources due to their superior field electron emission (FEE) characteristics. However, these materials show poor stability and short lifetimes, which prevent their use in practical device applications. The aim of this study was to find an innovative nanomaterial possessing both high robustness and reliable FEE behavior. Herein, a hybrid structure of self-organized multi-layered graphene (MLG)-boron doped diamond (BDD) nanowall materials with superior FEE characteristics was successfully synthesized using a microwave plasma enhanced chemical vapor deposition process. Transmission electron microscopy reveals that the as-prepared carbon clusters have a uniform, dense, and sharp nanowall morphology with sp(3) diamond cores encased by an sp(2) MLG shell. Detailed nanoscale investigations conducted using peak force-controlled tunneling atomic force microscopy show that each of the core-shell structured carbon cluster fields emits electrons equally well. The MLG-BDD nanowall materials show a low turn-on field of 2.4 V mu m(-1), a high emission current density of 4.2 mA cm(-2) at an applied field of 4.0 V mu m(-1), a large field enhancement factor of 4500, and prominently high lifetime stability (lasting for 700 min), which demonstrate the superiority of these materials over other hybrid nanostructured materials. The potential of these MLG-BDD hybrid nanowall materials in practical device applications was further illustrated by the plasma illumination behavior of a microplasma device with these materials as the cathode, where a low threshold voltage of 330 V (low threshold field of 330 V mm(-1)) and long plasma stability of 358 min were demonstrated. The fabrication of these hybrid nanowalls is straight forward and thereby opens up a pathway for the advancement of next-generation cathode materials for high brightness electron emission and micro-plasma-based display devices. The authors would like to thank the Research Foundation Flanders (FWO) for providing the financial support via Research Grants 12I8416N and 1519817N, and the Methusalem "NANO" network. K. J. Sankaran is a Postdoctoral Fellow of the Research Foundation-Flanders (FWO). This work was also supported by the Polish National Science Centre (NCN) under Grant No. 2014/14/M/ST5/00715 and 2016/21/B/ST7/01430. The DS funds of Faculty of Electronics, Telecommunications and Informatics of the Gdansk University of Technology are also acknowledged. K. P. and J. Y. P. were supported by the Institute for Basic Science [IBS-R004-A2-2017-a00]. The manuscript was written through contributions of all authors. All authors gave approval to the final version of the manuscript.

Hybridization of gold nanoparticles in the ultrananocrystalline diamond materials improves the electrical conductivity of the materials to a high level of 230 (Ω cm)(-1) with a sheet carrier concentration of 8.9 × 10(20) cm(-2). These hybrid materials show enhanced electron field emission (EFE) properties, viz. a low turn-on field of 2.1 V μm(-1) with a high EFE current density of 5.3 mA cm(-2) (at an applied field of 4.9 V μm(-1)) and the life-time stability up to a period of 372 min. The fabrication of these hybrid materials with high conductivity and superior EFE behaviors is a direct and simple process which opens new prospects in flat panel displays and high brightness electron sources.

Highly efficient with excellent stability electron field emitters based on monolayer graphene coated on well-aligned Si tip (graphene/SiT) arrays fabricated by a simple transfer method are demonstrated. The graphene monolayer is coated on the Si tip array using a chemical vapor deposition process, while the SiTs are prepared through the etching process of a Si substrate. The novel heterostructure field emitter enhanced electron tunneling, as a result, exhibits a better emission property. In addition, the fabricated microplasma devices based on the graphene/SiT heterostructure are closely correlated to the field emission properties of the graphene/SiT materials. The monolayer graphene supported on vertical SiTs provides the protruded nanostructure, which locally enhances the electric field and thus improves the field emission and the plasma illumination characteristics.

Enhanced electron field emission (EFE) properties due to hydrogen post-treatment at 600 °C have been observed for ultrananocrystalline diamond (UNCD) films. The EFE properties of H2-gas-treated UNCD films could be turned on at a low field of 5.3 V/μm, obtaining an EFE current density of 3.6 mA/cm(2) at an applied field of 11.7 V/μm that is superior to those of UNCD films treated with H2 plasma. Transmission electron microscopic investigations revealed that H2 plasma treatment induced amorphous carbon (a-C) (and graphitic) phases only on the surface region of the UNCD films but the interior region of the UNCD films still contained very small amounts of a-C (and graphitic) grain boundary phases, resulting in a resistive transport path and inferior EFE properties. On the other hand, H2 gas treatment induces a-C (and graphitic) phases along the grain boundary throughout the thickness of the UNCD films, resulting in creation of conduction channels for the electrons to transport from the bottom of the films to the top and hence the superior EFE properties.

Microstructural evolution of ultrananocrystalline diamond (UNCD) films in the bias-enhanced nucleation and growth (BEN-BEG) process in CH4/Ar plasma is systematically investigated. The BEN-BEG UNCD films possess higher growth rate and better electron field emission (EFE) and plasma illumination (PI) properties than those of the films grown without bias. Transmission electron microscopy investigation reveals that the diamond grains are formed at the beginning of growth for films grown by applying the bias voltage, whereas the amorphous carbon forms first and needs more than 30 min for the formation of diamond grains for the films grown without bias. Moreover, the application of bias voltage stimulates the formation of the nanographite phases in the grain boundaries of the UNCD films such that the electrons can be transported easily along the graphite phases to the emitting surface, resulting in superior EFE properties and thus leading to better PI behavior. Interestingly, the 10 min grown UNCD films under bias offer the lowest turn-on field of 4.2 V/μm with the highest EFE current density of 2.6 mA/cm(2) at an applied field of 7.85 V/μm. Such superior EFE properties attained for 10 min bias grown UNCD films leads to better plasma illumination (PI) properties, i.e., they show the smallest threshold field of 3300 V/cm with largest PI current density of 2.10 mA/cm(2) at an applied field of 5750 V/cm.

In this paper we present the growth of three kinds of diamond films including ultrananocrystalline diamond (UNCD), nitrogen doped UNCD and hybrid granular structured diamond (HiD) films on Au coated silicon for applying as a cathode in a parallel-plate type microplasma device. The phase constituents and microstructures of these diamond films were investigated in order to understand the role of the intrinsic properties of these cathode materials on manipulation of the plasma characteristics of the corresponding devices. We observed that, while the diamond materials with a high fraction of sp2-bonded carbons exhibited superior electron field emission (EFE) properties and hence better plasma illumination (PI) behavior, the cathode materials with a suitable microstructure are required to ensure longer lifetime for practical applications of the microplasma devices. Based on these observations, we have developed hybrid granular structured diamond films, in which the sp2-bonded carbons were hidden in the boundaries between the sp3-bonded diamond grains, such that the films exhibited not only excellent EFE properties and PI behavior but also good PI behavior with long lifetime.

Ion implantation is used to create nanodiamonds (NDs) with embedded magnetic ions for use in a wide range of biological and medical applications; however, the effectiveness of this process depends heavily on separating magnetic NDs from nonmagnetic ones. In this study, we use secondary ion mass spectrometry to verify the implantation of magnetic ions in NDs and the success of separation. When applied to a series of NDs with embedded iron or manganese ions, the sorting tool used in this study proved highly effective in selecting magnetic NDs. Besides, multienergy ion implantation and precise thickness control of NDs coating on the silicon wafer were suggested to improve this technology.

Boron neutron capture therapy is a powerful anti-cancer treatment, the success of which depends heavily on the boron delivery agent. Enabling the real-time tracing of delivery agents as they move through the body is crucial to the further development of boron neutron therapy. In this study, we fabricate highly bio-compatible boron-10 embedded nanodiamonds using physical ion implantation in conjunction with a two-step annealing process. The red fluorescence of the nanodiamonds allows their use in fluorescence microscopy and in vivo imaging systems, thereby making it possible to conduct tracking in real time. The proposed fluorescent boron-10 embedded nanodiamonds, combining optical visibility and boron-10 transport capability, are a promising boron delivery agent suitable for a wide range of biomedical applications.

We report the optical and electrical properties of high-dose (1015–1017 ions/cm2) Mn-ion implanted ultrananocrystalline diamond (Mn-UNCD) films. Mn-ion implantation and post-annealing of UNCD films lead to the formation of Mn-related color centers, characterized in Mn-UNCD films by their zero phonon line emissions at 621.2 nm and phonon sidebands at 611.2 nm and 630.3 nm. Raman spectra of Mn-UNCD films indicated amorphization via high-dose Mn-ion implantation and that the annealing process results in graphitization of the films. The Mn-UNCD film implanted with the Mn-ion dose of 1017 ions/cm2 exhibits a conductivity of 122.25 (Ω cm)−1, as well as enhanced field electron emission (FEE) properties such as a turn-on field of 10.67 V/μm and a FEE current density of 0.85 mA/cm2.

We report the systematic studies on the fabrication of aligned, uniform, and highly dense diamond nanostructures from diamond films of various granular structures. Self-assembled Au nanodots are used as a mask in the self-biased reactive-ion etching (RIE) process, using an O2/CF4 process plasma. The morphology of diamond nanostructures is a close function of the initial phase composition of diamond. Cone-shaped and tip-shaped diamond nanostructures result for microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films, whereas pillarlike and grasslike diamond nanostructures are obtained for Ar-plasma-based and N2-plasma-based ultrananocrystalline diamond (UNCD) films, respectively. While the nitrogen-incorporated UNCD (N-UNCD) nanograss shows the most-superior electron-field-emission properties, the NCD nanotips exhibit the best photoluminescence properties, viz, different applications need different morphology of diamond nanostructures to optimize the respective characteristics. The optimum diamond nanostructure can be achieved by proper choice of granular structure of the initial diamond film. The etching mechanism is explained by in situ observation of optical emission spectrum of RIE plasma. The preferential etching of sp(2)-bonded carbon contained in the diamond films is the prime factor, which forms the unique diamond nanostructures from each type of diamond films. However, the excited oxygen atoms (O*) are the main etching species of diamond film.

Field electron emission (FEE) properties of vertically aligned hexagonal boron nitride nanowalls (hBNNWs) grown on Si have been markedly enhanced through the use of nitrogen doped nanocrystalline diamond (nNCD) films as an interlayer. The FEE properties of hBNNWs-nNCD heterostructures show a low turn-on field of 15.2 V/mu m, a high FEE current density of 1.48 mA/cm(2) and life-time up to a period of 248 min. These values are far superior to those for hBNNWs grown on Si substrates without the nNCD interlayer, which have a turn-on field of 46.6 V/mu m with 0.21 mA/cm(2) FEE current density and life-time of 27 min. Cross-sectional TEM investigation reveals that the utilization of the diamond interlayer circumvented the formation of amorphous boron nitride prior to the growth of hexagonal boron nitride. Moreover, incorporation of carbon in hBNNWs improves the conductivity of hBNNWs. Such a unique combination of materials results in efficient electron transport crossing nNCD-to-hBNNWs interface and inside the hBNNWs that results in enhanced field emission of electrons. The prospective application of these materials is manifested by plasma illumination measurements with lower threshold voltage (370 V) and longer life-time, authorizing the role of hBNNWs-nNCD heterostructures in the enhancement of electron emission. The authors like to thank the financial support of the Research Foundation Flanders (FWO) via Research Project G.0456.12, G0044.13N and the Methusalem "NANO" network. Kamatchi Jothiramalingam Sankaran, Stuart Turner, and Paulius Pobedinskas are Postdoctoral Fellows of the Research Foundations Flanders (FWO).

Plasma post-treatment (ppt) process for enhancing the electron field emission (EFE) properties of diamond/CNTs films for the applications in triode vacuum field emission (VFE) transistors is being reported. The EFE properties of UNCD/CNTs films were markedly improved by modifying the granular structure by ppt-process. The factor which resulted in enhanced EFE properties is due to the formation of nano-graphitic layers, while the nano-sized diamond grains coalesced. The triode VFE transistors performance was also significantly enhanced due to the utilization of DGC/CNTs (or HiD/CNTs) films as cathode that renders the triode VFE transistors possessing great potential for applications in vacuum microelectronics.

A superior field electron emission (FEE) source made from a hierarchical heterostructure, where two-dimensional hexagonal boron nitride (hBN) nanowalls were coated on one-dimensional diamond nanorods (DNRs), is fabricated using a simple and scalable method. FEE characteristics of hBN-DNR display a low turn-on field of 6.0 V mu m(-1), a high field enhancement factor of 5870 and a high life-time stability of 435 min. Such an enhancement in the FEE properties of hBN-DNR derives from the distinctive material combination, i.e., high aspect ratio of the heterostructure, good electron transport from the DNR to the hBN nanowalls and efficient field emission of electrons from the hBN nanowalls. The prospective application of these heterostructures is further evidenced by enhanced microplasma devices using hBN-DNR as a cathode, in which the threshold voltage was lowered to 350 V, affirming the role of hBN-DNR in the improvement of electron emission. The authors like to thank the financial support of the Research Foundation Flanders (FWO) via Research Projects G.0456.12 and G.0044.13N, the Methusalem "NANO" network. KJ Sankaran, and P Pobedinskas are Postdoctoral Fellows of the Research Foundation-Flanders (FWO).

An electron field emitter with superior electron field emission (EFE) properties and improved lifetime stability is being demonstrated via the combination of carbon nanotubes and the CH4/N2 plasma grown ultrananocrystalline diamond (N-UNCD) films. The resistance of the carbon nanotubes to plasma ion bombardment is improved by the formation of carbon nanocones on the side walls of the carbon nanotubes, thus forming strengthened carbon nanotubes (s-CNTs). The N-UNCD films can thus be grown on s-CNTs, forming N-UNCD/s-CNTs carbon nanocomposite materials. The N-UNCD/s-CNTs films possess good conductivity of σ = 237 S/cm and marvelous EFE properties, such as low turn-on field of (E0) = 3.58 V/μm with large EFE current density of (J(e)) = 1.86 mA/cm(2) at an applied field of 6.0 V/μm. Moreover, the EFE emitters can be operated under 0.19 mA/cm(2) for more than 350 min without showing any sign of degradation. Such a superior EFE property along with high robustness characteristic of these combination of materials are not attainable with neither N-UNCD films nor s-CNTs films alone. Transmission electron microscopic investigations indicated that the N-UNCD films contain needle-like diamond grains encased in a few layers of nanographitic phase, which enhanced markedly the transport of electrons in the N-UNCD films. Moreover, the needle-like diamond grains were nucleated from the s-CNTs without the necessity of forming the interlayer that facilitate the transport of electrons crossing the diamond-to-Si interface. Both these factors contributed to the enhanced EFE behavior of the N-UNCD/s-CNTs films.

We improved the electron field emission properties of ultrananocrystalline diamond (UNCD) films grown on Si-tip arrays by using the carbon nanotubes (CNTs) as interlayer and post-treating the films in CH4/Ar/H2 plasma. The use of CNTs interlayer effectively suppresses the presence of amorphous carbon in the diamond-to-Si interface that enhances the transport of electrons from Si, across the interface, to diamond. The post-treatment process results in hybrid-granular-structured diamond (HiD) films via the induction of the coalescence of the ultrasmall grains in these films that enhanced the conductivity of the films. All these factors contribute toward the enhancement of the electron field emission (EFE) process for the HiDCNT/Si-tip emitters, with low turn-on field of E0 = 2.98 V/μm and a large current density of 1.68 mA/cm(2) at an applied field of 5.0 V/μm. The EFE lifetime stability under an operation current of 6.5 μA was improved substantially to τHiD/CNT/Si-tip = 365 min. Interestingly, these HiDCNT/Si-tip materials also show enhanced plasma illumination behavior, as well as improved robustness against plasma ion bombardment when they are used as the cathode for microplasma devices. The study concludes that the use of CNT interlayers not only increase the potential of these materials as good EFE emitters, but also prove themselves to be good microplasma devices with improved performance.

Diamond nanostructures (DNSs) were fabricated from three different morphological diamonds, microcrystalline diamond (MCD), nanocrystalline diamond (NCD), and ultrananocrystalline diamond (UNCD) films, using a reactive ion etching method. The plasma illumination ( PI) behavior of microplasma devices using the DNSs and the diamond films as cathode were investigated. The Paschen curve approach revealed that the secondary electron emission coefficient (gamma value) of diamond materials is similar irrespective of the microstructure (MCD, NCD, and UNCD) and geometry of the materials (DNSs and diamond films). The diamond materials show markedly larger gamma-coefficient than conventional metallic cathode materials such as Mo that resulted in markedly better PI behavior for the corresponding microplasma devices. Moreover, the PI behavior, i.e. the voltage dependence of plasma current density (J(pl)-V), plasma density (n(e)-V), and the robustness of the devices, varied markedly with the microstructure and geometry of the cathode materials that was closely correlated to the electron field emission (EFE) properties of the cathode materials. The UNCD nanopillars, possessing good EFE properties, resulted in superior PI behavior, whereas the MCD diamond films with insufficient EFE properties led to inferior PI behavior. Consequently, enhancement of plasma characteristics is the collective effects of EFE behavior and secondary electron emission characteristics of diamond-based cathode materials. The authors would like to thank the Ministry of Science and Technology, Republic of China, for the support of this research through the project No. MOST104-2112-M-032-003. Kamatchi Jothiramalingam Sankaran is a Postdoctoral Fellow of the Research Foundation-Flanders (FWO).

In this study we have developed a near Ultra Violet (NUV) source by using discharge of Ar + N 2 gas mixture with employ of DC power source. The cathode materials play vital role in efficiency and lifetime of UV sources, which are attained from micro-discharges of various gas compositions. In the present study, micro discharges are conducted in the cavity, which have been architecture by using cylindrical diamond nanotips cathode and ITO coated glass anode. The NUV emission (330 to 400 nm) from the N 2 (C-B transition) observed at pressure of 10 torr by applying the DC power of 30-120 mW. The NUV emissions have collected by optical emission spectrometer. The NUV emission intensities increased as function of power at constant pressure. Moreover the devices tested at low pressures and powers in non-harsh gas environment.

The enhanced lifetime stability for the carbon nanotubes (CNTs) by coating hybrid granular structured diamond (HiD) films on Au-decorated CNTs/Si using a two-step microwave plasma enhanced chemical vapor deposition process was reported. Electron field emission (EFE) properties of HiD/Au/CNTs emitters show a low turn-on field (E0) of 3.50 V/μm and a high emission current density (Je) of 0.64 mA/cm(2) at an applied field of 5.0 V/μm. There is no notable current degradation or fluctuation over a period of τ(HiD/Au/CNTs) = 360 min for HiD/CNTs EFE emitters tested under a constant current of 4.5 μA. The robustness of the HiD/CNTs EFE emitter is overwhelmingly superior to that of bare CNTs EFE emitters (τ(CNTs) = 30 min), even though the HiD/Au/CNTs do not show the same good EFE properties as CNTs, which are E0 = 0.73 V/μm and Je = 1.10 mA/cm(2) at 1.05 V/μm. Furthermore, the plasma illumination (PI) property of a parallel-plate microplasma device fabricated using the HiD/Au/CNTs as a cathode shows a high Ar plasma current density of 1.76 mA/cm(2) at an applied field of 5600 V/cm with a lifetime of plasma stability of about 209 min, which is markedly better than the devices utilizing bare CNTs as a cathode. The CNT emitters coated with diamond films possessing marvelous EFE and PI properties with improved lifetime stability have great potential for the applications as cathodes in flat-panel displays and microplasma display devices.

We report the synthesis of silicon-vacancy (SiV) incorporated spherical shaped ultrananocrystalline diamond (SiV-UNCD) particulates (size ~1 μm) with bright luminescence at 738 nm. For this purpose, different granular structured polycrystalline diamond films and particulates were synthesized by using three different kinds of growth plasma conditions on the three types of substrate materials in the microwave plasma enhanced CVD process. The grain size dependent photoluminescence properties of nitrogen vacancy (NV) and SiV color centers have been investigated for different granular structured diamond samples. The luminescence of NV center and the associated phonon sidebands, which are usually observed in microcrystalline diamond and nanocrystalline diamond films, were effectively suppressed in UNCD films and UNCD particulates. Micron sized SiV-UNCD particulates with bright SiV emission has been attained by transfer of SiV-UNCD clusters on soda-lime glass fibers to inverted pyramidal cavities fabricated on Si substrates by the simple crushing of UNCD/soda-lime glass fibers in deionized water and ultrasonication. Such a plasma enhanced CVD process for synthesizing SiV-UNCD particulates with suppressed NV emission is simple and robust to attain the bright SiV-UNCD particulates to employ in practical applications.

Vertically aligned conducting ultrananocrystalline diamond (UNCD) nanorods are fabricated using the reactive ion etching method incorporated with nanodiamond particles as mask. High electrical conductivity of 275 Ω·cm−1 is obtained for UNCD nanorods. The microplasma cavities using UNCD nanorods as cathode show enhanced plasma illumination characteristics of low threshold field of 0.21 V/μm with plasma current density of 7.06 mA/cm2 at an applied field of 0.35 V/μm. Such superior electrical properties of UNCD nanorods with high aspect ratio potentially make a significant impact on the diamond-based microplasma display technology.

Titanium Aluminum Nitride (Ti1−xAlxN) thin films with different Al concentrations (64 & 81%) were deposited on SS substrate by reactive magnetron co–sputtering. GIXRD result shows that it has NaCl type crystal structure. Adhesion strength of Ti1−xAlxN with 81% Al (3 N) is higher than the 64% (1.4 N) because it is softer than the later. The average surface hardness of these films was measured as 34 and 30 GPa, respectively.

The enhancement on the plasma illumination characteristics of a cylindrical microplasma device due to the utilization of hybrid-diamond (HiD) films as cathode was systematically investigated. The improved plasma illumination behavior was closely related to the enhanced electron field emission (EFE) properties of the diamond films. The HiD films, which possessed better EFE properties, including lower turn-on field for inducing the EFE process [(E0)efe = 2.7 V/μm] and higher EFE current density [(Je)efe = 2.8 mA/cm2, at 10.6 V/μm], resulted in superior illumination performance for the microplasma devices. The plasma can be triggered at a low threshold field of (Eth)pl. = 0.166 V/μm, attaining a large plasma current density of (Je)pl. = 9.6 mA/cm2 at an applied field of 0.266 V/μm (plasma density of ne = 1.70 × 1015 cm−3). The better EFE for the HiD films is ascribed to the unique granular structure of the films. Transmission electron microscopic studies revealed that the HiD films contained large diamond ag...