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Your search keyword '"Sputz, S.K."' showing total 22 results
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22 results on '"Sputz, S.K."'

1. Multiwavelength DFB laser array with integrated spot size converters

Author

Ketelsen, L.J.P., Grenko, J.a., Sputz, S.K., Focht, M.W., Vandenberg, J.M., Johnson, J.E., Reynolds, C.L., Geary, J.M., Levkoff, J., Glogovsky, K.G., Stampone, D.v., Chu, S.N.G., Siegrist, T., Pernell, T.L., Walters, F.S., Sheridan-Eng, J., Lentz, J.L., Alam, M.a., People. R., Hybertsen, M.S., Isaacs, E.D., Evans-Lutterodt, K., Leibenguth, R.e., Przybylek, G.J., Zhang, L., Feder, K., Shunk, S., Tennant, D.M., Peticolas, L.J., Romero, D.M., Freund, J.M., Falk, B.S., Tzafaras, N.N., Smith, L.E., Luther, L.C., Geva, M., Gault, W.A., and Zilko, J.L.

Subjects
Array processors -- Design and construction, Quantum electronics -- Research, Business, Computers, Electronics, Electronics and electrical industries
Abstract

A five-element quarterwave-shifted distributed feedback laser array was designed and fabricated, and its performance reported.

Published
2000

2. Threshold-like behavior of photoluminescence in laser heterostructure wafers

Author

Grinberg, A.A. and Sputz, S.K.

Subjects
Photoluminescence -- Analysis, Semiconductor wafers -- Research, Physics
Abstract

A study was conducted on the photoluminescence (PL) in heterostructure wafers under the conditions when optical pumping produces e-h pairs in the active region of the wafer only. The surface conductivity of the layers around the active region was found to cause spreading of PL along the wafer surface. The spreading changed the nature of the PL dependence on the pump power Pint. The observed pump power interval was attributed to the combination of the spreading effect, the increase of the radiative fraction in e-h recombination rate and the limited aperture of the PL detector.

Published
1997

4. Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input

Author

Johnson, J.E., primary, Ketelsen, L.J.-P., additional, Grenko, J.A., additional, Sputz, S.K., additional, Vandenberg, J., additional, Focht, M.W., additional, Stampone, D.V., additional, Peticolas, L.J., additional, Smith, L.E., additional, Glogovsky, K.G., additional, Przybylek, G.J., additional, Chu, S.N.G., additional, Lentz, J.L., additional, Tzafaras, N.N., additional, Luther, L.C., additional, Pernell, T.L., additional, Walters, F.S., additional, Romero, D.M., additional, Freund, J.M., additional, Reynolds, C.L., additional, Gruezke, L.A., additional, People, R., additional, and Alam, M.A., additional

Published
2000
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6. Wavelength stability, performance, and future trends for electroabsorption-modulated sources

Author

Ketelsen, L.J.P., primary, Grenko, J.A., additional, Sputz, S.K., additional, Isaacs, E.D., additional, Vandenberg, J.M., additional, Johnson, J.E., additional, Chu, S.N.G., additional, Hybertsen, M.S., additional, Evans-Lutterodt, K., additional, Sutryn, D.C., additional, Geva, M., additional, Glew, R.W., additional, Pinzone, C.J., additional, Cheng, L.S., additional, Asous, W.A., additional, Parayanthal, P., additional, People, R., additional, Alam, M.A., additional, and Hartman, R.L., additional

Published
1998
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11. Simulation and characterization of the selective area growth process.

Author

Alam, M.A., People, R., Isaacs, E., Kim, C.Y., Evans-Lutterodt, K., Siegrist, T., Pernell, T.L., Vandenberg, J., Sputz, S.K., Chu, S.N.G., Lang, D.V., Smith, L., and Hybertsen, M.S.

Subjects
CHEMICAL vapor deposition, ORGANOMETALLIC compounds
Abstract

Interprets the metalorganic chemical vapor deposition technique called selective area growth (SAG) using a three-dimensional vapor phase model. Profiles of thickness predicted by the model; Long range effects of the thickness composition of metals; Uses of the SAG process; Key idea behind SAG.

Published
1999
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12. GaAs/AlGaAs quantum well and modulation-doped heterostructures grown by organometallic vapor....

Author

Hobson, W.S., Ren, F., Schnoes, M. Lamont, Sputz, S.K., Harris, T.D., Pearton, S.J., Abernathy, C.R., and Jones, K.S.

Subjects
QUANTUM wells, HETEROSTRUCTURES
Abstract

Examines the high-quality GaAs/AlGaAs quantum well and modulation-doped heterostructures. Advantage of trimethylmine alane over conventional organometallic precursors; Observation on photoluminescence from quantum well samples; Fabrication of selectively doped heterostructure transistors.

Published
1991
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15. Spot-size-converted 1.3 μm directly-modulated Fabry-Perot and distributed feedback lasers suitable for passive alignment and 2.5 gb/s operation at 85°C

Author

Klotzkin, D., primary, Sheridan-Eng, J., additional, Mazzatesta, A., additional, Ford, G., additional, Laquindinum, J., additional, Chien, M., additional, Park, M., additional, Michel, E., additional, Kinkel, R., additional, Roycroft, S., additional, Ketelsen, L.J.P., additional, Johnson, J.E., additional, Sputz, S.K., additional, Lentz, J.L., additional, Alam, M.A., additional, Hybertsen, M.S., additional, Reynolds, C.L., additional, Glogovsky, K.G., additional, Stampone, D., additional, Chu, S.N.G., additional, Romero, D., additional, Freund, J., additional, Liebenguth, R., additional, and Walters, F., additional

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20. Hybrid integrated sources for WDM systems.

Author

Johnson, J.E., Ketelsen, I.J.P., Muehlner, D.J., Dautartas, M.F., Gates, J.V., Cappuzzo, M.A., Geary, J.M., Grenko, J.A., Vandenberg, J.M., Sputz, S.K., Focht, M.W., Laskowski, E.J., Gomez, L.T., Glogovsky, K.G., Reynolds, C.L., Chu, S.N.G., Gault, W.A., Hybertsen, M.S., and Zilko, J.L.

Published
1999
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