1. Dielectric Properties of Disordered A6B2O17 (A = Zr; B = Nb, Ta) Phases
- Author
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Spurling, R. Jackson, Almishal, Saeed S. I., Casamento, Joseph, Hayden, John, Spangler, Ryan, Marakovits, Michael, Hossain, Arafat, Lanagan, Michael, and Maria, Jon-Paul
- Subjects
Condensed Matter - Materials Science - Abstract
We report on the structure and dielectric properties of ternary A6B2O17 (A = Zr; B = Nb, Ta) thin films and ceramics. Thin films are produced via sputter deposition from dense, phase-homogenous bulk ceramic targets, which are synthesized through a reactive sintering process at 1500 {\deg}C. Crystal structure, microstructure, chemistry and dielectric properties are characterized by X-ray diffraction and reflectivity, atomic force microscopy, X-ray photoelectron spectroscopy, and capacitance analysis respectively. We observe relative permittivities approaching 60 and loss tangents < 10^-2 across the 10^3-10^5 Hz frequency range in the Zr6Nb2O17 and Zr6Ta2O17 phases. These observations create an opportunity space for this novel class of disordered oxide electroceramics., Comment: Journal of the American Ceramic Society, 2024
- Published
- 2024
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