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Abstract Introduction Clothing can be a cause of occupational dermatitis. Frequent causes of clothing-related dermatological problems can be the fabric itself and/or chemical additives used in the laundering process, friction from certain fabrics excessively rubbing the skin, or heat retention from perspiration-soaked clothing in hot working environments. To the best of our knowledge, these are the first reported cases of miliaria rubra associated with prolonged use of flame resistant clothing in the medical literature. Case presentation We report 18 cases (14 men and 4 women, with an age range of 19 to 37 years) of moderate to severe skin irritation associated with wearing flame resistant clothing in hot arid environments (temperature range: 39 to 50°C, 5% to 25% relative humidity). We describe the medical history in detail of a 23-year-old Caucasian woman and a 31-year-old African-American man. A summary of the other 16 patients is also provided. Conclusions These cases illustrate the potential serious nature of miliaria with superimposed Staphylococcus infections. All 18 patients fully recovered with topical skin treatment and modifications to their dress ensemble. Clothing, in particular blend fabrics, must be thoroughly laundered to adequately remove detergent residue. While in hot environments, individuals with sensitive skin should take the necessary precautions such as regular changing of clothing and good personal hygiene to ensure that their skin remains as dry and clean as possible. It is also important that they report to their health care provider as soon as skin irritation or rash appears to initiate any necessary medical procedures. Miliaria rubra can take a week or longer to clear, so removal of exposure to certain fabric types may be necessary.

We demonstrate a novel differential phase-shift-keying (DPSK) demodulator based on coherent perfect absorption (CPA). Our DPSK demodulator chip device, which incorporates a silicon ring resonator, two bus waveguide inputs, and monolithically integrated detectors, operates passively at a bit rate of 10 Gbps at telecommunication wavelengths, and fits within a mm-scale footprint. Critical coupling is used to achieve efficient CPA by tuning the gap between the ring and bus waveguides. The device has a vertical eye opening of 12.47 mV and a quality factor exceeding 3×10 4 . The fundamental principle behind this photonic circuit can be extended to other formats of integrated demodulators.

CMOS-compatible Si⁺-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 µm are demonstrated. Responsivities of 9.9 ± 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 - 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350°C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 µm-length p-i-n device is measured to be ~1.7 GHz for a wavelength of λ = 2.2 µm, thus potentially opening up new communication bands for photonic integrated circuits.

Mode-division-multiplexing (MDM) and wavelength-division-multiplexing (WDM) are employed simultaneously in a multimode silicon waveguide to realize on-chip MDM and MDM-WDM transmission. Asymmetric Y-junction MDM multiplexers and demultiplexers are utilized for low coherently suppressed demultiplexed crosstalk at the receiver. We demonstrate aggregate bandwidths of 20 Gb/s and 60 Gb/s for MDM and MDM-WDM on-chip links, respectively, with measured 10(-9) BER power penalties between 0.1 dB and 0.7 dB per channel.

Metal-semiconductor-metal Si waveguide photodetectors are demonstrated with responsivities of greater than 0.5 A/W at a wavelength of 1550 nm for a device length of 1mm. Sub-bandgap absorption in the Si waveguide is achieved by creating divacancy lattice defects via Si(+) ion implantation. The modal absorption coefficient of the ion-implanted Si waveguide is measured to be ≈ 185 dB/cm, resulting in a detector responsivity of ≈ 0.51 A/W at a 50 V bias. The frequency response of a typical 1mm-length detector is measured to be 2.6 GHz, with simulations showing that a frequency response of 9.8 GHz is achievable with an optimized contact configuration and bias voltage of 15 V. Due to the ease with which these devices can be fabricated, and their potential for high performance, these detectors are suitable for various applications in Si-based photonic integrated circuits.

Silicon waveguide asymmetric Y junction mode multiplexers and demultiplexers are demonstrated for applications in on-chip mode-division multiplexing (MDM). We measure demultiplexed crosstalk as low as -30 dB, <-9 dB over the C band, and insertion loss <1.5 dB for multimode links up to 1.2 mm in length. The frequency response of these devices is shown to depend upon Y junction angle and multimode interconnect length. Interference effects are shown to be advantageous for low-crosstalk MDM, even while using compact Y junctions designed to be outside the mode-sorting regime.