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Abstract Thallium bromide (TlBr) semiconductor detectors are being developed as promising candidates for high-detection-efficiency, high-energy-resolution, and room-temperature gamma-ray spectrometers. This study presents methods for evaluating TlBr crystal quality and carrier transport characteristics using neutron Bragg-dip imaging and the time-of-flight method for pulsed-laser-induced carriers, respectively. Neutron Bragg-dip imaging effectively determines the crystal orientation distribution, revealing crystal imperfections and grain boundaries. Time-of-flight measurements provide a spatial distribution of carrier mobility. In this study, two samples obtained from both the upstream and downstream region in the crystal ingot were evaluated. Although both samples show similar crystal quality, the upstream sample showed high carrier mobility across all areas, whereas the downstream sample exhibits low mobility in some areas. These findings suggest that, at least within the range of carrier mobility currently obtained, the effect of crystal integrity on carrier mobility is less significant than that of impurities. In conclusion, combining neutron Bragg-dip imaging with carrier mobility measurements offers a comprehensive approach to evaluating and improving TlBr detectors.

Because thallium bromide (TlBr) semiconductor detectors with a wide bandgap show high detection efficiency and energy resolution, room-temperature gamma-ray spectrometers based on such detectors have been developed. In this study, we developed a system for evaluating the carrier transport properties in a TlBr detector, such as the mobility and the mobility-lifetime product (μτ product), in which the time-of-flight method is applied to charge carriers generated by a pulsed laser. In the developed system, the recombination effect and internal electric field distortion were experimentally confirmed to be negligible under the experimental conditions in this study. We determined the electron mobility and μτ product in the TlBr detector to be 25.3 cm²/Vs and 1.3 × 10-3 cm²/V, respectively. Because the laser spot diameter is less than 0.5 mm, the constructed measurement system allows the evaluation of the mobility and μτ product at a point on the crystal. It is also possible to evaluate the 2D distribution of the mobility and μτ product by scanning the laser irradiation position. [ABSTRACT FROM AUTHOR]

TlBr semiconductor detectors are candidate high-detection-efficiency, high-energyresolution, and room-temperature gamma-ray spectrometers. We evaluate the effective volume of a small-anode TlBr detector with a guard electrode through basic experiments and simulations, which are conducted for various voltages applied to the guard electrode. We confirm that the detection efficiency increases with decreasing guard voltage compared with the anode and saturates at a certain value. Under saturation conditions, the effective volume is evaluated to be 56% by simulation. In addition, we experimentally confirm that the energy resolution can be improved for a small-anode TlBr detector with a guard electrode by correcting the signal pulse height by pulse shape discrimination. [ABSTRACT FROM AUTHOR]

Thallium bromide (TlBr) semiconductor detectors are promising candidates for highdetection-efficiency, high-energy-resolution, and room-temperature gamma-ray spectrometers. In this study, we conducted neutron Bragg dip and electron backscatter diffraction (EBSD) imaging of TlBr crystals to measure the crystal orientation distribution. We confirmed that crystal grains were continuous over a certain distance along the solidification direction for samples fabricated with the current growth procedure. Finally, we compared the crystal orientation maps obtained with the two techniques. The two types of maps showed similar patterns. We concluded that EBSD, which can observe only surfaces, can be utilized to assess the uniformity of the bulky TlBr crystal, especially when observing the crystal surface perpendicular to the solidification direction. [ABSTRACT FROM AUTHOR]