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Interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (VOC,in), measured by photoluminescence, and the external open-circuit voltage (VOC,ex), that is, a VOC deficit. Aspirations to reach higher VOC,ex values require a comprehensive knowledge of the connection between VOC deficit and interface recombination. Here, a near-surface defect model is developed for copper indium di-selenide solar cells grown under Cu-excess conditions. These cell show the typical signatures of interface recombination: a strong disparity between VOC,in and VOC,ex, and extrapolation of the temperature dependent q·VOC,ex to a value below the bandgap energy. Yet, these cells do not suffer from reduced interface bandgap or from Fermi-level pinning. The model presented is based on experimental analysis of admittance and deep-level transient spectroscopy, which show the signature of an acceptor defect. Numerical simulations using the near-surface defects model show the signatures of interface recombination without the need for a reduced interface bandgap or Fermi-level pinning. These findings demonstrate that the VOC,in measurements alone can be inconclusive and might conceal the information on interface recombination pathways, establishing the need for complementary techniques like temperature dependent current–voltage measurements to identify the cause of interface recombination in the devices.

Interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (VOC,in), measured by photoluminescence, and the external open-circuit voltage (VOC,ex), that is, a VOC deficit. Aspirations to reach higher VOC,ex values require a comprehensive knowledge of the connection between VOC deficit and interface recombination. Here, a near-surface defect model is developed for copper indium di-selenide solar cells grown under Cu-excess conditions. These cell show the typical signatures of interface recombination: a strong disparity between VOC,in and VOC,ex, and extrapolation of the temperature dependent q·VOC,ex to a value below the bandgap energy. Yet, these cells do not suffer from reduced interface bandgap or from Fermi-level pinning. The model presented is based on experimental analysis of admittance and deep-level transient spectroscopy, which show the signature of an acceptor defect. Numerical simulations using the near-surface defects model show the signatures of interface recombination without the need for a reduced interface bandgap or Fermi-level pinning. These findings demonstrate that the VOC,in measurements alone can be inconclusive and might conceal the information on interface recombination pathways, establishing the need for complementary techniques like temperature dependent current–voltage measurements to identify the cause of interface recombination in the devices.

Gamma ray is an effective mutagen which creates useful variability for crop like cluster bean where the natural variation is very meagre and creation of variability by conventional methods is cumbersome. In the present study, cluster bean cv. Pusa Navbahar was treated with different level of gamma rays from 50 Gy to 600 Gy with 50Gy interval and obtained M2 population was subjected to variability estimation for yield and its attributing traits in augmented block design. The variance between the control and the mutants was found to be significant for plant height, number of pods per cluster, number of pods per plant, pod length, pod width, pulp to seed ratio. For these traits, PCV ranged from 14.28 per cent (pod width) to 31.99 per cent (pulp to seed ratio) whereas, GCV ranged from 10.10 per cent (pod width) to 24.16 per cent (pulp to seed ratio). The heritability in broad sense ranged from 50 per cent (pod width) to 79.99 per cent (Plant height). Genetic advance expressed as percentage over mean ranged from 2.06 per cent (pod width) to 222.44 per cent (plant height). The traits like plant height, pod length, pod width, pulp to seed ratio showed sufficient variability due to induced mutation. All these traits showed medium to high heritability and high genetic advance hence selection for these traits will be effective.

Background. Despite long-standing clinical use of sodium polystyrene sulphonate (SPS) for hyperkalaemia management in chronic kidney disease (CKD), its safety profile remains poorly investigated. Methods. We undertook an observational analysis of nephrology-referred adults with incident CKD Stage 4þ in Sweden during 2006-16 and with no previous SPS use. We studied patterns of use and adverse events associated to SPS initiation during follow-up. Patterns of SPS use were defined by chronicity of treatment and by prescribed dose. We estimated hazard ratios (HRs) and 95% confidence intervals (CIs) associated with SPS initiation (time-varying exposure) for the risk of severe (intestinal ischaemia, thrombosis or ulceration/perforation) and minor (de novo dispensation of laxatives or anti-diarrheal drugs) gastrointestinal (GI) events. Results. Of 19 530 SPS-naïve patients with CKD, 3690 initiated SPS during follow-up. A total of 59% took SPS chronically, with an average of three dispensations/year. The majority (85%) were prescribed lower dosages than specified on the product label. During follow-up, 202 severe and 1149 minor GI events were recorded. SPS initiation was associated with a higher incidence of severe adverse events [adjusted HR 1.25 95% CI 1.05-1.49)], particularly in those receiving per label doses [1.54 (1.09-2.17)] and mainly attributed to ulcers and perforations. SPS initiation was also associated with higher incidence of minor GI events [adjusted HR 1.11 (95% CI 1.03-1.19)], regardless of dose, and mainly accounted for by de novo dispensation of laxatives. Conclusions. Initiation of SPS in patients with advanced CKD is associated with a higher risk of severe GI complications as well as the initiation of GI-related medications, particularly when prescribed at per label doses.