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AgNbO3 (AN)-based lead-free antiferroelectric ceramics are widely studied for their use as dielectric capacitor materials. In this study, Eu3+-doped AN ceramics were prepared and the results show that Eu3+ diffused into the AN lattice. The ceramics were formed by M1 and M2 phases coexisting at room temperature, as distinct from the M1 (M: monoclinic) phase of pure AN. Electrical properties and structural characterization showed that the antiferroelectric stability of the ceramics increases with the increase in Eu3+ levels. At room temperature, Ag0.94Eu0.02NbO3 ceramic exhibited a good energy storage density of 5.3 J/cm3 and a high efficiency of 71.9%. When the temperature rises from room temperature to 140 °C, the efficiency of the sample decreases from 80.4% to 67.1% and Wr decreases from 2.1 to 2.0 J/cm3, which indicates that the sample has good temperature stability. The time constant (t0.9) of this sample was less than 60 ns and the power density (PD) was 51.3 MW/cm3, indicating excellent charge–discharge capabilities. This novel ceramic is expected to be used as a new dielectric capacitor material for pulsed power supplies. [ABSTRACT FROM AUTHOR]

A series of textured (Nb0.5La0.5)xTi1‐xO2 (x = 0, 0.0025, 0.005, 0.01) ceramics were sintered in a nitrogen environment after magnetic slip casting (12 T). Component x ranges from 0.0025 to 0.01 while the degree of orientation increases from 0.49 to 0.88. (Nb0.5La0.5)0.01Ti0.99O2 ceramics in the parallel magnetic field's plane have a high permittivity ɛr ≈ 1.6 × 104 and the ultralow dielectric loss tanδ ≈ 0.0038 at 104 Hz. The temperature coefficient value of η ≤ ± 7.1% between 218–473 K, fulfilling the X9R requirements. The giant permittivity properties of textured ceramics are mainly derived from internal barrier layer capacitor impacts, electron hopping, and electron‐pinned defect‐dipoles polarization. The microstructure evolution of sintered ceramics was modified by texturing in a magnetic field, leading to higher activation energies of dielectric relaxations and resistance of grain boundaries and grains. This excellent performance is expected to show great potential in electronic devices' miniaturization and high‐density energy storage. [ABSTRACT FROM AUTHOR]

Dielectric spectroscopy was carried out for reduced and stoichiometric La0.0025Nb0.0025Ti0.995O2 ceramics synthesized by sintering in different atmospheres. A giant permittivity (~1 × 104) was obtained at a frequency of 100 MHz and temperature range from 170 to 350 K. Three dielectric relaxation mechanisms were observed within the temperature range of 10‐300 K via dielectric spectroscopy. A low temperature dipole relaxation peak (in the temperature range of 10‐30 K) in the spectra was identified to be associated with the giant permittivity specifically measured at 100 MHz. The origin of such giant permittivity was attributed to dipole orientation polarization. Hopping polaron and interfacial effect contributed to giant permittivity. After annealing treatment, all the relaxation contributions were weakened. Low dielectric loss was attributed to high resistance of grain and grain boundaries. Annealing in ambient conditions led to decreased relaxation times which gives the signature of decreased concentration of oxygen vacancies and Ti3+. Dipoles which were related to oxygen vacancies and Ti3+, resulted in giant permittivity up to 100 MHz. [ABSTRACT FROM AUTHOR]

(In0.5Nb0.5)0.005(Ti1‐xZrx)0.995O2 (INZT, x = 0‐0.10) ceramics were synthesized using a conventional sintering method, and the effects of Zr content on the microstructures, dielectric properties and electron‐pinned defect‐dipoles (EPDD) polarization of the resultant products were investigated. The solubility limit of INZT was x = 0.075, and a secondary ZrTiO4 phase appeared at x = 0.10. Ceramics with x = 0‐0.10 exhibited excellent dielectric properties, ie, colossal permittivity (CP, εʹ > 103) and low dielectric loss (tanδ < 0.1), over a wide range of frequencies (100‐106 Hz at 300 K) and temperatures (50‐350 K at 1 kHz). The dielectric spectra and XPS results confirmed that the CP property of the ceramics could be ascribed to their EPDD polarization. The activation energy (Ea) for EPDD polarization was continuously enhanced by increasing x values. EPDD relaxation parameters at different x values were revealed using Cole‐Cole equation fitting. Moreover, α, which characterize the relaxation time τ distribution, increased with x values, thus indicating that Zr was involved in and affected electron localized states. The high Ea, temperature Tp of the peak εʹʹ at 1 kHz, and dielectric relaxation time τp at 30 K were related to increases in hopping distance of electrons among defect clusters with Zr addition. [ABSTRACT FROM AUTHOR]

(Pb0.87Ba0.10La0.02)(Zr0.60Sn0.40-xTix)O3(PLBZST) (x = 0–0.20) bulk ceramics were prepared by the conventional solid state method, and the dependence of phase transformation, ferroelectric properties and energy storage properties on x values has been investigated. When x = 0.12, the unit cell volume significant change indicted the phase transformation of the ceramics. As x = 0.04–0.10, the PLBZST ceramics possess anti-ferroelectric phase with high recoverable energy storage density 0.8–1.3 j/cm3and when x = 0.12–0.20, the ceramics with ferroelectric phase have lower density values about 0.2–0.3 j/cm3. The phase switching electric field, saturation polarization and test temperature have an important influence on energy storage density and efficiency. As a result, the PLBZST bulk ceramics exhibit the largest recoverable energy density of 1.3 j/cm3with efficiency of 77.4% at 20°C. [ABSTRACT FROM AUTHOR]