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419 results on '"Song, Xiufeng"'

7. High-sensitivity hybrid MoSe2/AgInGaS quantum dot heterojunction photodetector

Author

Zhao, Xunjia, primary, Wang, Xusheng, additional, Jia, Runmeng, additional, Lin, Yuhai, additional, Guo, TingTing, additional, Wu, Linxiang, additional, Hu, Xudong, additional, Zhao, Tong, additional, Yan, Danni, additional, zhu, Lin, additional, Chen, Zhanyang, additional, Xu, Xinsen, additional, Chen, Xiang, additional, and Song, Xiufeng, additional

Published
2024
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12. Ultrasensitive Photodetector Based on 2D WS2/AgInGaS Quantum Dots Heterojunction with Interfacial Charge Transfer.

Author

Wang, Xusheng, primary, Yan, Danni, additional, Zhu, Cheng, additional, Feng, Yiping, additional, Guo, Tingting, additional, Jia, Runmeng, additional, Qu, Kairui, additional, Li, Linyun, additional, Zhao, Tong, additional, Xiong, Yunhai, additional, Farhan, Ahmad, additional, Lin, Yuhai, additional, Wu, Linxiang, additional, Dong, Yuhui, additional, Zhang, Shengli, additional, Chen, Xiang, additional, and song, xiufeng, additional

Published
2023
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13. Rapid degeneration of rod photoreceptors expressing self-association-deficient arrestin-1 mutant

Author

Song, Xiufeng, Seo, Jungwon, Baameur, Faiza, Vishnivetskiy, Sergey A, Chen, Qiuyan, Kook, Seunghyi, Kim, Miyeon, Brooks, Evan K, Altenbach, Christian, Hong, Yuan, Hanson, Susan M, Palazzo, Maria C, Chen, Jeannie, Hubbell, Wayne L, Gurevich, Eugenia V, and Gurevich, Vsevolod V

Subjects
Biochemistry and Cell Biology, Biological Sciences, Neurosciences, Eye Disease and Disorders of Vision, Aetiology, 2.1 Biological and endogenous factors, Animals, Arrestin, Cell Death, MAP Kinase Kinase 4, Mice, Mutation, Protein Multimerization, Retinal Rod Photoreceptor Cells, Rhodopsin, Self-association, Monomer, Cell death, Retina, G protein-coupled receptor, G protein-coupled receptor kinase, GPCR, GRK, P-Ops, P-Rh, P-Rh*, Rh, Rh*, WT, dark phosphorylated rhodopsin, dark unphosphorylated rhodopsin, light-activated phosphorylated rhodopsin, light-activated unphosphorylated rhodopsin, phospho-opsin, wild type, Medical Physiology, Biochemistry & Molecular Biology, Biochemistry and cell biology
Abstract

Arrestin-1 binds light-activated phosphorhodopsin and ensures timely signal shutoff. We show that high transgenic expression of an arrestin-1 mutant with enhanced rhodopsin binding and impaired oligomerization causes apoptotic rod death in mice. Dark rearing does not prevent mutant-induced cell death, ruling out the role of arrestin complexes with light-activated rhodopsin. Similar expression of WT arrestin-1 that robustly oligomerizes, which leads to only modest increase in the monomer concentration, does not affect rod survival. Moreover, WT arrestin-1 co-expressed with the mutant delays retinal degeneration. Thus, arrestin-1 mutant directly affects cell survival via binding partner(s) other than light-activated rhodopsin. Due to impaired self-association of the mutant its high expression dramatically increases the concentration of the monomer. The data suggest that monomeric arrestin-1 is cytotoxic and WT arrestin-1 protects rods by forming mixed oligomers with the mutant and/or competing with it for the binding to non-receptor partners. Thus, arrestin-1 self-association likely serves to keep low concentration of the toxic monomer. The reduction of the concentration of harmful monomer is an earlier unappreciated biological function of protein oligomerization.

Published
2013

18. Demonstration of the normally off β-Ga2O3 MOSFET with high threshold voltage and high current density.

Author

Cai, Yuncong, Feng, Zhaoqing, Wang, Zhengxing, Song, Xiufeng, Hu, Zhuangzhuang, Tian, Xusheng, Zhang, Chunfu, Liu, Zhihong, Feng, Qian, Zhou, Hong, Zhang, Jincheng, and Hao, Yue

Subjects
METAL oxide semiconductor field-effect transistors, HIGH voltages, THRESHOLD voltage, FIELD-effect transistors, BREAKDOWN voltage
Abstract

In this work, we demonstrated the enhancement mode (E-mode) β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) by introducing a hybrid floating gate (HFG) structure. This E-mode Ga2O3 MOSFET featured the highest VTH of 9.03 V and the highest maximum current ID of 70.0 mA/mm among the reported lateral normally off β-Ga2O3 MOSFETs. Meanwhile, a breakdown voltage of 834 V, a specific on-resistance RON,sp of 19.3 mΩ·cm2, and a sub-threshold swing SS of 87 mV/dec were achieved simultaneously. In addition, VTH shifted by only 9.9% after applying a gate stress of 25 V for 105 s. These findings provide a promising path for the development of enhancement-mode Ga2O3 power devices by incorporating a charge-storage structure. [ABSTRACT FROM AUTHOR]

Published
2023
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22. Enhanced Phosphorylation-Independent Arrestins and Gene Therapy

Author

Gurevich, Vsevolod V., Song, Xiufeng, Vishnivetskiy, Sergey A., Gurevich, Eugenia V., Rosenthal, Walter, Series editor, Barrett, James E., Series editor, Hofmann, Franz B., Editor-in-chief, Buckingham, Julia, Series editor, Flockerzi, Veit, Series editor, Geppetti, Pierangelo, Series editor, Michel, Martin C., Series editor, Moore, Philip, Series editor, Page, Clive P., Series editor, and Gurevich, Vsevolod V., editor

Published
2014
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24. TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs

Author

Zhang, Ga, Zhao, Shenglei, Wang, Zhizhe, Song, Xiufeng, Liu, Shuang, Sun, Xuejing, Yu, Longyang, You, Shuzhen, Liu, Zhihong, Hao, Yue, and Zhang, Jincheng

Abstract

The single event burn-out (SEB) performances of p-GaN gate high electron mobility transistors (HEMTs) were investigated in this article, considering different buffer electron mobilities and incident depths. The output, transfer, and breakdown curves of p-GaN gate HEMTs are not affected by the buffer electron mobility. However, a decrease in buffer electron mobility from 1350 to 265 cm2/(V $\cdot $ s) leads to an increase in SEB voltage from 340 to 460 V. After heavy ion impact, a significant number of electron-hole pairs are generated within the device. Gate breakdown occurs when the electric field at the gate exceeds the critical breakdown strength. Subsequently, an increase in device current is observed, leading to local temperature in HEMT up to 2000 K. The localized high temperature induces the occurrence of SEB. Heavy ion strikes into the buffer layer significantly deteriorate the SEB characteristics. As the incident depth of heavy ion increases, the transient current and device temperature increase correspondingly. Simulation results indicate that the buffer layer has a great effect on SEB characteristics of p-GaN gate HEMTs.

Published
2024
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32. African Origin of Modern Humans in East Asia: A Tale of 12,000 Y Chromosomes

Author

Ke, Yuehai, Su, Bing, Song, Xiufeng, Lu, Daru, Chen, Lifeng, Li, Hongyu, Qi, Chunjian, Marzuki, Sangkot, Deka, Ranjan, Underhill, Peter, Xiao, Chunjie, Shriver, Mark, Lell, Jeff, Wallace, Douglas, Wells, R Spencer, Seielstad, Mark, Oefner, Peter, Zhu, Dingliang, Jin, Jianzhong, Huang, Wei, Chakraborty, Ranajit, Chen, Zhu, and Jin, Li

Published
2001

33. AlN/GaN Superlattice Channel HEMTs on Silicon Substrate

Author

Liu Shuang, Yinhe Wu, Dazheng Chen, Yue Hao, Song Xiufeng, Zhang Weihang, Shengrui Xu, Jincheng Zhang, and Shenglei Zhao

Subjects
Materials science, Condensed matter physics, Silicon, Superlattice, chemistry.chemical_element, High-electron-mobility transistor, Substrate (electronics), Type (model theory), Electronic, Optical and Magnetic Materials, chemistry, Breakdown voltage, Electrical and Electronic Engineering, Realization (systems), Energy (signal processing)
Abstract

High-electron-mobility transistor (HEMT) with AlN/GaN superlattice (SL) channel has been demonstrated on a silicon substrate. High OFF-state breakdown voltage ${V}_{\text {BR}}$ of 670 V (gate–drain spacing ${L}_{\text {GD}} = 8\,\,\mu \text{m}$ ) along with a maximum output current of 196 mA/mm, a channel electron total mobility of 507 cm2/ $\text{V}\cdot \text{s}$ , and an ON/ OFF ratio of over 107 was achieved in this novel HEMT. For the HEMT with ${L}_{\text {GD}} = 22\,\,\mu \text{m}$ , a high ${V}_{\text {BR}}$ of 1700 V was obtained with substrate floated. The influence of ${L}_{\text {GD}}$ , the gate–source voltage ${V}_{\text {GS}}$ , the isolated pattern, and substrate grounded and floated type was discussed to analyze the breakdown characteristics of HEMT. We investigated the trap states in the AlN/GaN SL channel of HEMTs by frequency-dependent capacitance and conductance measurements. A trap state density of $7.4\times 10^{{12}}$ – $1.2\times 10^{{13}}$ cm−2eV−1 is located at ${E}_{\text {T}}$ in a range of 0.29–0.33 eV of the main channel, while the trap state density in the parasitic channel decreases from $3.9\times 10^{{11}}$ cm−2eV−1 at an energy of 0.27 eV to $1.1\times 10^{{11}}$ cm−2eV−1 at an energy of 0.38 eV. The fabricated AlN/GaN SL channel HEMTs in this work reveal a great step toward the realization of the SL channel HEMTs on cost-effective silicon substrate and provide a novel technology for AlGaN multichannel devices to obtain high output current.

Published
2021

34. Hybrid mixed-dimensional WTe2/CsPbI3 perovskite heterojunction for high-performance photodetectors.

Author

Song, Xiufeng, Jian, Yuxuan, Wang, Xusheng, Chen, Jiawei, Shan, Qingsong, Zhang, Shengli, Chen, Zhanyang, Chen, Xiang, and Zeng, Haibo

Subjects
*PHOTODETECTORS, *HETEROJUNCTIONS, *OPTOELECTRONIC devices, *PEROVSKITE, *CHARGE carrier mobility, *CHARGE transfer, *LIGHT absorption
Abstract

Perovskites have showed significant potential for the application in photodetectors due to their outstanding electrical and optical properties. Integrating two-dimensional (2D) materials with perovskites can make full use of the high carrier mobility of 2D materials and strong light absorption of perovskite to realize excellent optoelectrical properties. Here, we demonstrate a photodetector based on the WTe2/CsPbI3 heterostructure. The quenching and the shortened lifetime of photoluminescence (PL) for CsPbI3 perovskite confirms the efficient charge transfer at the WTe2/CsPbI3 heterojunction. After coupled with WTe2, the photoresponsivity of the CsPbI3 photodetector is improved by almost two orders of magnitude due to the high-gain photogating effect. The WTe2/CsPbI3 heterojunction photodetector reveals a large responsivity of 1157 A W−1 and a high detectivity of 2.1 × 1013 Jones. The results pave the way for the development of high-performance optoelectronic devices based on 2D materials/perovskite heterojunctions. [ABSTRACT FROM AUTHOR]

Published
2023
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44. Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs

Author

Hong Zhou, Yachao Zhang, Jincheng Zhang, Shenglei Zhao, Yue Hao, Song Xiufeng, Liu Shuang, Zhang Weihang, Jun Luo, Zhihong Liu, and Hong Zhang

Subjects
Electron mobility, Materials science, General Computer Science, Gallium nitride, 02 engineering and technology, 01 natural sciences, Omega, breakdown voltage, chemistry.chemical_compound, Electric field, 0103 physical sciences, MOSFET, General Materials Science, 010302 applied physics, Condensed matter physics, General Engineering, Order (ring theory), power figure-of-merit (FOM), 021001 nanoscience & nanotechnology, GaN vertical trench MOSFETs, specific on-resistance, chemistry, Product (mathematics), lcsh:Electrical engineering. Electronics. Nuclear engineering, 0210 nano-technology, lcsh:TK1-9971, Current density
Abstract

In this work, device parameters for GaN vertical trench MOSFETs have been investigated systematically to further improve the device characteristics. The n− GaN drift layer, the p+ GaN layer and the trench gate are designed and optimized systematically using Silvaco ATLAS 2-D simulation, in order to get the best trade-off between $V_{\mathrm {BR}}$ and specific on-resistance $R_{\mathrm {on}}$ . Three-terminal breakdown curves, the electron concentration, current density and electric field strength distributions have been presented to analyze the breakdown characteristics. The correlations between different parameters and different initial conditions are considered, and the eight parameters are optimized comprehensively. After the final optimization, record high FOM of 4.8 GW/cm2, $V_{\mathrm {BR}}$ of 2783 V, average electric field $E_{\mathrm {drift}}$ of 1.98 MV/cm and a low $R_{\mathrm {on}}$ of 1.6 $\text{m}\Omega \cdot $ cm2 are obtained for drift layer thickness of $14~\mu \text{m}$ . The product of the thickness $L_{\mathrm {p}}$ and doping density $N_{\mathrm {p}}$ of p+ GaN layer can determine the breakdown mechanism, and punch through mechanism would occur when $L_{\mathrm {p}}\cdot N_{\mathrm {p}}$ is lower than a certain value. The results indicate there exists large optimization room for fabricated GaN vertical trench MOSFETs, and the device characteristics can be further improved through the methodology in this paper for high power and high voltage applications.

Published
2020

49. Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate

Author

Chen, Dazheng, primary, Yuan, Peng, additional, Zhao, Shenglei, additional, Liu, Shuang, additional, Xin, Qian, additional, Song, Xiufeng, additional, Yan, Shiqi, additional, Zhang, Yachao, additional, Xi, He, additional, Zhu, Weidong, additional, Zhang, Weihang, additional, Zhang, Jiaqi, additional, Zhou, Hong, additional, Zhang, Chunfu, additional, Zhang, Jincheng, additional, and Hao, Yue, additional

Published
2021
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