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Bulk silicon device technologies are reaching fundamental scaling limitations. The 28 nm and 22 nm technology nodes have seen the introduction of Ultra-Thin Body and Buried Oxide Fully Depleted SOI (UTBB-FDSOI) devices and FinFETs, respectively. Fully Depleted transistor technologies are mandatory to suppress short channel effects. Today, all major research and development alliances state that the silicon and its Fully Depleted transistor technologies have the potential to address roadmap requirements down to the 10nm node. Innovations will be necessary for lower, more advanced node (under 10nm). Specifications are to continue to ensure a good electrostatic control while providing excellent electrical performance. To meet these demands, several research areas (substrate engineering as well as multiple gate devices and 3D integration) will be involved in integrated circuit fabrication. This paper reports our latest achievements in SOI-type bonded substrates for advanced technology nodes.

This paper reports the first demonstration of 300 mm In0.53Ga0.47As-on-insulator (InGaAs-OI) substrates. The use of direct wafer bonding and the Smart Cut technology lead to the transfer of high quality InGaAs layer on large Si wafer size (300 mm) at low effective cost, taking into account the reclaim of the III-V on Si donor substrate. The optimization of the three key building blocks of this technology is detailed. (1) The III-V epitaxial growth on 300 mm Si wafers has been optimized to decrease the defect density. (2) For the first time, hydrogen-induced thermal splitting is made inside the indium phosphide (InP) epitaxial layer and a wide implantation condition ranges is observed on the contrary to bulk InP. (3) Finally a specific direct wafer bonding with alumina oxide has been chosen to avoid outgas diffusion at the alumina oxide/III-V compound interface.