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We introduce a two-fluid mobility model incorporating fundamental aspects of electron-hole (e-h) scattering such as momentum conservation for simulating laser-driven semiconductor switches (LDSSs). Compared to previous works that use Matthiessen's rule, the two-fluid mobility model predicts distinct AC responses of e-h plasmas in semiconductors. Based on the two-fluid mobility model, we develop a theory with very few adjustable parameters for simulating the switching performance of LDSSs based on high-purity indirect-gap semiconductors such as silicon (Si). As a prototypical application, we successfully reproduce experimentally measured reflectance at around 320 GHz in a laser-driven Si switch. By injecting e-h plasmas with densities up to $10^{20}\,\rm cm^{-3}$, we reveal the importance of carrier-screening effects in e-h scattering and Auger recombination for carrier densities above the critical carrier density for exciton-plasma Mott transition. Our results also suggest a way to characterize the intrinsic momentum-relaxation mechanism, e-h scattering, and the intrinsic e-h recombination mechanism in indirect-gap semiconductors, Auger recombination. We reassess the ambipolar Auger coefficient of high-purity Si with high injection levels of e-h plasmas up to $10^{20}\,\rm cm^{-3}$ and find a minimal value of $1.8\times10^{-41}\,{\rm cm^6/ns}$. The value is more than one order of magnitude smaller than the ambipolar Auger coefficient widely used for simulating LDSSs, $3.8\times10^{-40}\,{\rm cm^6/ns}$, which was deduced from minority-carrier lifetime in highly doped silicon more than four decades ago.

Single-molecule magnets (SMMs) with chemically tailorable properties are potential building blocks for quantum computing, high-density magnetic memory, and spintronics.1 2 3,4 These applications require isolated or few molecules on substrates, but studies of SMMs have mainly focused on bulk crystals. Moreover, fabrication of SMM-based devices and electrical detection of the SMM magnetic state are still coveted milestones that have so far been achieved mainly for double-decker rare-earth phthalocyanines at temperatures below 1 K.5-8 Here we demonstrate electrical detection of magnetization switching for a modification of the archetypal SMM Mn12, up to 70 K, based on the supramolecular spin valve effect5 with graphene quantum dots9. Notably, the exchange interaction between the molecules and the graphene, as well as the dot-mediated intermolecular interaction, can be directly extracted from the electrical response, opening the way to an effective characterization of the quantum properties of different types of SMMs in a wide temperature range.

In this paper, we present a rapidly-prototyped, costefficient, 3D-printed quasioptical sample holder for improving the signal-to-noise ratio (SNR) in modern, resonator-free, highfield electron paramagnetic resonance (EPR) spectrometers. Such spectrometers typically operate in induction mode: the detected EPR (cross-polar) signal is polarized orthogonal to the incident (co-polar) radiation. The sample holder improves SNR in three modes: continuous wave, pulsed, and rapid-scan. An adjustable sample positioner allows for optimizing sample position to maximize the 240 GHz magnetic field B1, and a rooftop mirror allows for small rotations of the cross-polar signal to maximize the signal and minimize the co-polar background. When optimized, the co-polar isolation (the ratio of incident to detected co-polar signal) was around 50 dB, an improvement of over 20 dB. This large isolation is especially beneficial for maximizing the SNR of rapidscan EPR, but also improves the SNR in pulsed and cwEPR experiments. Through minimal modification, the sample holder may be incorporated into a variety of homebuilt, induction-mode hfEPR spectrometers in order to significantly improve the SNR (approx. 6x), and thereby reduce the acquisition time (by more than a factor of 30).