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We report the first observation of non-Markovian stochastic resonance, i.e., noise-assisted amplification of a periodic signal in a system with memory. Our system is an oil-filled optical microcavity which, driven by a continuous wave laser, has memory in its nonlinear optical response. By modulating the cavity length while adding noise to the driving laser, we observe a peak in the transmitted signal-to-noise ratio as a function of the noise variance. Our experimental observations are reproduced by numerical simulations, which further reveal that the stochastic resonance bandwidth is enlarged by the memory time of the nonlinearity. This frequency range available for noise-assisted amplification is $10^8$ times greater in our oil-filled cavity than in a Kerr nonlinear cavity. Our results pave the way for exploring the interplay of nonlinearity, noise, and memory, in oil-filled cavity arrays, where non-Markovian dynamics could enhance noise-assisted transport and synchronization effects., Comment: 10 pages, of which 4 are supplemental material. 10 figures total

We investigate, experimentally and theoretically, the dynamic optical hysteresis of a coherently driven cavity with non-instantaneous photon-photon interactions. By scanning the frequency detuning between the driving laser and the cavity resonance at different speeds across an optical bistability, we find a hysteresis area that is a non-monotonic function of the scanning speed. As the scanning speed increases and approaches the memory time of the photon-photon interactions, the hysteresis area decays following a power law with exponent -1. The exponent of this power law is independent of the system parameters. To reveal this universal scaling behavior theoretically, we introduce a memory kernel for the interaction term in the standard driven-dissipative Kerr model. Our results offer new perspectives for exploring non-Markovian dynamics of light using arrays of bistable cavities with low quality factors, driven by low laser powers, and at room temperature., Comment: 9 pages, including 3 pages of supplemental information. 6 figures, including 1 figure in supplemental information

Three-dimensional arrays of silicon transistors increase the density of bits. Solid-state qubits are much larger so could benefit even more from using the third dimension given that useful fault-tolerant quantum computing will require at least 100,000 physical qubits and perhaps one billion. Here we use laser writing to create 3D arrays of nitrogen-vacancy centre (NVC) qubits in diamond. This would allow 5 million qubits inside a commercially available 4.5x4.5x0.5 mm diamond based on five nuclear qubits per NVC and allowing $(10 \mu m)^3$ per NVC to leave room for our laser-written electrical control. The spin coherence times we measure are an order of magnitude longer than previous laser-written qubits and at least as long as non-laser-written NVC. As well as NVC quantum computing, quantum communication and nanoscale sensing could benefit from the same platform. Our approach could also be extended to other qubits in diamond and silicon carbide., Comment: 8 pages, 4 figures

Atomically flat semiconducting materials such as monolayer WSe$_2$ hold great promise for novel optoelectronic devices. Recently, quantum light emission has been observed from bound excitons in exfoliated WSe$_2$. As part of developing optoelectronic devices, the control of the radiative properties of such emitters is an important step. Here we report the coupling of a bound exciton in WSe$_2$ to open microcavities. We use a range of radii of curvature in the plano-concave cavity geometry with mode volumes in the $\lambda^3$ regime, giving Purcell factors of up to 8 while increasing the photon flux five-fold. Additionally we determine the quantum efficiency of the single photon emitter to be $\eta = 0.46 \pm 0.03$. Our findings pave the way to cavity-enhanced monolayer based single photon sources for a wide range of applications in nanophotonics and quantum information technologies., Comment: 17 pages, 6 figures

Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant systems. Excitons with a well-defined valley index (or valley pseudospin) as well as superpositions of the exciton valley states can be created with light having circular and linear polarization, respectively. However, the generated excitons have short lifetimes (ps) and are also subject to the electron-hole exchange interaction leading to fast relaxation of the valley pseudospin and coherence. Here we show that control of these processes can be gained by embedding a monolayer of WSe$_2$ in an optical microcavity, where part-light-part-matter exciton-polaritons are formed in the strong light-matter coupling regime. We demonstrate the optical initialization of the valley coherent polariton populations, exhibiting luminescence with a linear polarization degree up to 3 times higher than that of the excitons. We further control the evolution of the polariton valley coherence using a Faraday magnetic field to rotate the valley pseudospin by an angle defined by the exciton-cavity-mode detuning, which exceeds the rotation angle in the bare exciton. This work provides unique insight into the decoherence mechanisms in TMDs and demonstrates the potential for engineering the valley pseudospin dynamics in monolayer semiconductors embedded in photonic structures.

While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of information. In transition metal dichalcogenide (TMD) monolayers, where spin-valley locking is present, strong retention of valley chirality has been reported for MoS$_2$, WSe$_2$ and WS$_2$ while MoSe$_2$ shows anomalously low valley polarisation retention. In this work, chiral selectivity of MoSe$_2$ cavity polaritons under helical excitation is reported with a polarisation degree that can be controlled by the exciton-cavity detuning. In contrast to the very low circular polarisation degrees seen in MoSe$_2$ exciton and trion resonances, we observe a significant enhancement of up to 7 times when in the polaritonic regime. Here, polaritons introduce a fast decay mechanism which inhibits full valley pseudospin relaxation and thus allows for increased retention of injected polarisation in the emitted light. A dynamical model applicable to cavity-polaritons in any TMD semiconductor, reproduces the detuning dependence through the incorporation of the cavity-modified exciton relaxation, allowing an estimate of the spin relaxation time in MoSe$_2$ which is an order of magnitude faster than those reported in other TMDs. The valley addressable exciton-polaritons reported here offer robust valley polarised states demonstrating the prospect of valleytronic devices based upon TMDs embedded in photonic structures, with significant potential for valley-dependent nonlinear polariton-polariton interactions.

We demonstrate the fabrication of sub-micron layers of single-crystal diamond suitable for subsequent processing as demonstrated by this test ring structure. This method is a significant enabling technology for nanomechanical and photonic structures incorporating colour-centres. The process uses a novel double implant process, annealing and chemical etching to produce membranes of diamond from single-crystal starting material, the thinnest layers achieved to date are 210 nm thick., Comment: 21 pages, 4 figures

We demonstrate the tunable enhancement of the zero phonon line of a single nitrogen-vacancy color center in diamond at cryogenic temperature. An open cavity fabricated using focused ion beam milling provides mode volumes as small as 1.24 $\mu$m$^3$. In-situ tuning of the cavity resonance is achieved with piezoelectric actuators. At optimal coupling of the full open cavity the signal from individual zero phonon line transitions is enhanced by about a factor of 10 and the overall emission rate of the NV$^-$ center is increased by 40% compared with that measured from the same center in the absence of cavity field confinement. This result is important for the realization of efficient spin-photon interfaces and scalable quantum computing using optically addressable solid state spin qubits., Comment: 11 pages Main Article + 4 pages Supplementary Info Typos fixed from v1

Layered materials can be assembled vertically to fabricate a new class of van der Waals (VDW) heterostructures a few atomic layers thick, compatible with a wide range of substrates and optoelectronic device geometries, enabling new strategies for control of light-matter coupling. Here, we incorporate molybdenum diselenide/boron nitride (MoSe$_2$/hBN) quantum wells (QWs) in a tunable optical microcavity. Part-light-part-matter polariton eigenstates are observed as a result of the strong coupling between MoSe$_2$ excitons and cavity photons, evidenced from a clear anticrossing between the neutral exciton and the cavity modes with a splitting of 20 meV for a single MoSe$_2$ monolayer QW, enhanced to 29 meV in MoSe$_2$/hBN/MoSe$_2$ double-QWs. The splitting at resonance provides an estimate of the exciton radiative lifetime of 0.4 ps. Our results pave the way for room temperature polaritonic devices based on multiple-QW VDW heterostructures, where polariton condensation and electrical polariton injection through the incorporation of graphene contacts may be realised.

We report an extended family of spin textures in coexisting modes of zero-dimensional polariton condensates spatially confined in tunable open microcavity structures. The coupling between photon spin and angular momentum, which is enhanced in the open cavity structures, leads to new eigenstates of the polariton condensates carrying quantised spin vortices. Depending on the strength and anisotropy of the cavity confinement potential and the strength of the spin-orbit coupling, which can be tuned via the excitonic/photonic fractions, the condensate emissions exhibit either spin-vortex-like patterns or linear polarization, in good agreement with theoretical modelling.

Open-access microcavities are emerging as a new approach to confine and engineer light at mode volumes down to the $\lambda^3$ regime. They offer direct access to a highly confined electromagnetic field while maintaining tunability of the system and flexibility for coupling to a range of matter systems. This article presents a study of coupled cavities, for which the substrates are produced using Focused Ion Beam milling. Based on experimental and theoretical investigation the engineering of the coupling between two microcavities with radius of curvature of \SI{6}{\micro\meter} is demonstrated. Details are provided by studying the evolution of spectral, spatial and polarisation properties through the transition from isolated to coupled cavities. Normal mode splittings up to 20 meV are observed for total mode volumes around $10 \times \lambda^3$. This work is of importance for future development of lab-on-a-chip sensors and photonic open-access devices ranging from polariton systems to quantum simulators., Comment: 6 pages, 2 pages supplementary materials, 6 figures

Quasi-two-dimensional (2D) films of layered metal-chalcogenides have attractive optoelectronic properties. However, photonic applications of thin films may be limited owing to weak light absorption and surface effects leading to reduced quantum yield. Integration of 2D films in optical microcavities will permit these limitations to be overcome owing to modified light coupling with the films. Here we present tunable microcavities with embedded monolayer MoS2 or few monolayer GaSe films. We observe significant modification of spectral and temporal properties of photoluminescence (PL): PL is emitted in spectrally narrow and wavelength-tunable cavity modes with quality factors up to 7400; PL life-time shortening by a factor of 10 is achieved, a consequence of Purcell enhancement of the spontaneous emission rate. This work has potential to pave the way to microcavity-enhanced light-emitting devices based on layered 2D materials and their heterostructures, and also opens possibilities for cavity QED in a new material system of van der Waals crystals.

We present a method to implement 3-dimensional polariton confinement with in-situ spectral tuning of the cavity mode. Our tunable microcavity is a hybrid system consisting of a bottom semiconductor distributed Bragg reflector (DBR) with a cavity containing quantum wells (QWs) grown on top and a dielectric concave DBR separated by a micrometer sized gap. Nanopositioners allow independent positioning of the two mirrors and the cavity mode energy can be tuned by controlling the distance between them. When close to resonance we observe a characteristic anticrossing between the cavity modes and the QW exciton demonstrating strong coupling. For the smallest radii of curvature concave mirrors of 5.6 $\mu$m and 7.5 $\mu$m real-space polariton imaging reveals submicron polariton confinement due to the hemispherical cavity geometry.

We describe a technique for fabricating micro- and nano-structures incorporating fluorescent defects in diamond with a positional accuracy in the hundreds of nanometers. Using confocal fluorescence microscopy and focused ion beam (FIB) etching we first locate a suitable defect with respect to registration marks on the diamond surface and then etch a structure using these coordinates. We demonstrate the technique here by etching an 8 micron diameter hemisphere positioned such that a single negatively charged nitrogen-vacancy defect lies at its origin. This type of structure increases the photon collection efficiency by removing refraction and aberration losses at the diamond-air interface. We make a direct comparison of the fluorescence photon count rate before and after fabrication and observe an 8-fold increase due to the presence of the hemisphere.

Modern intense ultrafast pulsed lasers generate an electric field of sufficient strength to permit tunnel ionization of the valence electrons in atoms. This process is usually treated as a rapid succession of isolated events, in which the states of the remaining electrons are neglected. Such electronic interactions are predicted to be weak, the exception being recollision excitation and ionization caused by linearly-polarized radiation. In contrast, it has recently been suggested that intense field ionization may be accompanied by a two-stage `shake-up' reaction. Here we report a unique combination of experimental techniques that enables us to accurately measure the tunnel ionization probability for argon exposed to 50 femtosecond laser pulses. Most significantly for the current study, this measurement is independent of the optical focal geometry, equivalent to a homogenous electric field. Furthermore, circularly-polarized radiation negates recollision. The present measurements indicate that tunnel ionization results in simultaneous excitation of one or more remaining electrons through shake-up. From an atomic physics standpoint, it may be possible to induce ionization from specific states, and will influence the development of coherent attosecond XUV radiation sources. Such pulses have vital scientific and economic potential in areas such as high-resolution imaging of in-vivo cells and nanoscale XUV lithography., Comment: 17 pages, 4 figures, original format as accepted by Nature Physics

We present results on the charge dependence of the radiative recombination lifetime, Tau, and the emission energy of excitons confined to single self-assembled InGaAs quantum dots. There are significant dot-to-dot fluctuations in the lifetimes for a particular emission energy. To reach general conclusions, we present the statistical behavior by analyzing data recorded on a large number of individual quantum dots. Exciton charge is controlled with extremely high fidelity through an n-type field effect structure, providing access to the neutral exciton (X0), the biexciton (2X0) and the positively (X1+) and negatively (X1-) charged excitons. We find significant differences in the recombination lifetime of each exciton such that, on average, Tau(X1-) / Tau(X0) = 1.25, Tau(X1+) / Tau(X0) = 1.58 and Tau(2X0) / Tau(X0) = 0.65. We attribute the change in lifetime to significant changes in the single particle hole wave function on charging the dot, an effect more pronounced on charging X0 with a single hole than with a single electron. We verify this interpretation by recasting the experimental data on exciton energies in terms of Coulomb energies. We show directly that the electron-hole Coulomb energy is charge dependent, reducing in value by 5-10% in the presence of an additional electron, and that the electron-electron and hole-hole Coulomb energies are almost equal., Comment: 8 pages, 7 figures, submitted to Phys. Rev. B

In this report the authors examine the possibility of using the Fractal Attrition Equation as a metamodel to describe outcomes of cellular automaton combat models. This Fractal Attrition Equation has been proposed as a replacement for the Lanchester equation. Unlike Lanchester's equation, it is based on a measurement of the spatial distribution of forces involved in a battle, and incorporates this by use of the concept of the fractal dimension. In this report, the form of the expected Loss-Exchange-Ratio function based on this equation is determined. It is shown how this function can be used as a Metamodel to describe the outcome of some cellular automaton models. While this is not an exhaustive proof of the validity of the equation, the case discussed does display interesting features which should be further investigated. This is particularly so given the earlier work of the authors in demonstrating that the Fractal Attrition Equation explains certain features of historical combat data., Comment: 34 pages, 14 figures, released by the TTCP organisation

We report the observation of power law dynamics on nanosecond to microsecond time scales in the fluorescence decay from semiconductor nanocrystals, and draw a comparison between this behavior and power-law fluorescence blinking from single nanocrystals. The link is supported by comparison of blinking and lifetime data measured simultaneously from the same nanocrystal. Our results reveal that the power law coefficient changes little over the nine decades in time from 10 ns to 10 s, in contrast with the predictions of some diffusion based models of power law behavior., Comment: 3 pages, 2 figures, compressed for submission to Applied Physics Letters

We have performed detailed photoluminescence (PL) and absorption spectroscopy on the same single self-assembled quantum dot in a charge-tunable device. The transition from neutral to charged exciton in the PL occurs at a more negative voltage than the corresponding transition in absorption. We have developed a model of the Coulomb blockade to account for this observation. At large negative bias, the absorption broadens as a result of electron and hole tunneling. We observe resonant features in this regime whenever the quantum dot hole level is resonant with two-dimensional hole states located at the capping layer-blocking barrier interface in our structure., Comment: 6 pages, 6 figures

We report a novel experimental technique for the comparison of ionization processes in ultrafast laser pulses irrespective of pulse ellipticity. Multiple ionization of xenon by 50 fs 790 nm, linearly and circularly polarized laser pulses is observed over the intensity range 10 TW/cm^2 to 10 PW/cm^2 using Effective Intensity Matching (EIM), which is coupled with Intensity Selective Scanning (ISS) to recover the geometry-independent probability of ionization. Such measurements, made possible by quantifying diffraction effects in the laser focus, are compared directly to theoretical predictions of multiphoton, tunnel and field ionization, and a remarkable agreement demonstrated. EIM-ISS allows the straightforward quantification of the probability of recollision ionization in a linearly polarized laser pulse. Furthermore, probability of ionization is discussed in terms of the Keldysh adiabaticity parameter, gamma, and the influence of the precursor ionic states present in recollision ionization is observed for the first time., Comment: 10 pages, 5 figures, submitted to Phys. Rev. A on 09-09-05