491 results on '"Slipchenko, S. O."'
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2. Temperature Dependence of the Output Optical Power of Semiconductor Lasers–Thyristors Based on AlGaAs/GaAs/InGaAs Heterostructures
3. Luminescence in p–i–n Structures with Compensated Quantum Wells
4. High-Current Low-Voltage Switches for Nanosecond Pulse Durations Based on Thyristor (Al)GaAs/GaAs Homo- and Heterostructures
5. Lateral Mode Selection of Single-Mode Laser Diode Microstripe Bar (1050 nm) in External Cavity
6. Heterostructures of Quantum-Cascade Lasers with Nonselective Overgrowth by Metalorganic Vapour Phase Epitaxy
7. Low-Voltage InP Heterostyristors for 50–150 ns Current Pulses Generation
8. Features of Single-Mode Emission in 7.5–8.0 μm Range Quantum-Cascade Lasers with a Short Cavity Length
9. Metal–Dielectric Mirror Coatings for 4–5-μm Quantum-Cascade Lasers
10. Dielectric Highly Reflective Mirror Coatings for 4–5 μm Quantum Cascade Lasers
11. High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence
12. Surface-Emitting Quantum-Cascade Lasers with a Grating Formed by Focused Ion Beam Milling
13. Laser Diodes (850 nm) Based on an Asymmetric AlGaAs/GaAs Heterostructure with a Bulk Active Region for Generating High-Power Subnanosecond Optical Pulses
14. Quasi-CW, High-Power, Extended-Cavity Laser Diode Microarrays (λ = 976 nm) Based on Asymmetric Heterostructures with an Ultrawide Waveguide
15. Source of High-Power, High-Repetition-Rate, Pulsed Laser Radiation (1060 nm) Based on a Hybrid Stack of a Laser Diode Bar and a 2D Array of Optothyristors as a High-Speed Current Switch
16. Optimization of Cavity Parameters of High-Power InGaAs/AlGaAs/GaAs Laser Diodes (λ = 1060 nm) for Efficient Operation at Ultrahigh Pulsed Pump Currents
17. Study of the Spatial Characteristics of Emission of Surface-Emitting Ring Quantum-Cascade Lasers
18. High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss
19. Observation of long turn-on delay in pulsed quantum cascade lasers
20. Mode Selection of a Lateral Waveguide for Single-Mode Operation of Lasers with a Distributed Bragg Reflector
21. Heating Dynamics of the Active Region of High-Power Semiconductor Lasers (λ = 1060 nm) with an Ultra-Wide Aperture (800 µm) in the Quasi-CW Mode
22. Surface Emitting Quantum-Cascade Lasers with a Second-Order Grating and Elevated Coefficient of Coupling
23. Heterostructures of Quantum-Cascade Lasers Based on Composite Active Regions
24. Switching (Turn-on) Dynamics of Low-Voltage InP Homothyristors
25. High-Speed Bridge Photodetectors for the Mid-IR Spectral Region
26. Erratum to: Surface Emitting Quantum-Cascade Lasers with a Second-Order Grating and Elevated Coefficient of Coupling
27. Operating Characteristics of Semiconductor Quantum Well Lasers as Functions of the Waveguide Region Thickness
28. Quantum-Cascade Laser with Radiation Emission through a Textured Layer
29. Isotype n-AlGaAs/n-GaAs Heterostructures Optimized for Efficient Interband Radiative Recombination under Current Pumping
30. Surface Emitting Quantum-Cascade Ring Laser
31. Analysis of the Threshold Conditions and Lasing Efficiency of Internally Circulating Modes in Large Rectangular Cavities Based on AlGaAs/GaAs/InGaAs Laser Heterostructures
32. Output Optical Power Dynamics of Semiconductor Lasers (1070 nm) with a Few-Mode Lateral Waveguide of Mesa-Stripe Design at Ultrahigh Drive Currents
33. High-Power CW InGaAs/AlGaAs (1070 nm) Lasers with a Broadened Lateral Waveguide of the Mesa-Stripe Design
34. Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon
35. Spectroscopic Studies of Integrated GaAs/Si Heterostructures
36. Digital thing as a “new” object of “new” civil legal relations
37. Quantum-Cascade Ring Resonator Laser with 7–8 μm Wavelength and Surface Radiation Output
38. A Study of the Spatial-Emission Characteristics of Quantum-Cascade Lasers for the 8-μm Spectral Range
39. Spectral Dynamics of Quantum Cascade Lasers Generating Frequency Combs in the Long-Wavelength Infrared Range
40. Study of the Spatial and Current Dynamics of Optical Loss in Semiconductor Laser Heterostructures by Optical Probing
41. Spectral Characteristics of Half-Ring Quantum-Cascade Lasers
42. Study of the Spectra of Arched-Cavity Quantum-Cascade Lasers
43. Modeling the Spatial Switch-On Dynamics of a Laser Thyristor (λ = 905 nm) Based on an AlGaAs/InGaAs/GaAs Multi-Junction Heterostructure
44. Carrier-Transport Processes in n+-GaAs/n0-GaAs/n+-GaAs Isotype Heterostructures with a Thin Wide-Gap AlGaAs Barrier
45. Heterostructures of Quantum-Cascade Laser for the Spectral Range of 4.6 μm for Obtaining a Continuous-Wave Lasing Mode
46. Switching Control Model of Closed-Mode Structures in Large Rectangular Cavities Based on AlGaAs/InGaAs/GaAs Laser Heterostructures
47. Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide
48. Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide
49. The temperature dependence of build-up time in a QCL emitting in 8μm wavelength range
50. High-power quantum cascade lasers for 8 μm spectral range
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